会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明公开
    • 현미경 및 시료 관찰 방법
    • 显微镜和样品观察方法
    • KR1020060132583A
    • 2006-12-21
    • KR1020067009422
    • 2005-02-25
    • 하마마츠 포토닉스 가부시키가이샤
    • 테라다히로토시아라타이쿠오토키와마사하루다나베히로시사카모토시게루
    • G02B21/00
    • G02B21/0016G02B21/33Y10S359/90
    • For a semiconductor device (S) to be observed, an image fetching part (1), an optical system (2) including an objective lens (20), and a solid immersion lens (SIL) (3), which can move between an inserting position including an optical axis from the semiconductor device (S) to the objective lens (20) and a waiting position out of the optical axis, are arranged. Observation is performed in two control modes. In a first mode, the SIL (3) is arranged at the waiting position, and a focal point and aberration are corrected, based on a refraction factor n0 and a thickness t0 of a substrate of the semiconductor device (S). In a second mode, the SIL (3) is arranged at the inserting position, and a focal point and aberration are corrected, based on the refraction factor n0 and the thickness t0 of the substrate and a refraction factor n1, a thickness d1 and a curvature radius R1 of the SIL (3). Thus, a microscope and a sample observing method are provided to easily perform necessary sample observation required for fine structure analysis of semiconductor devices.
    • 对于要观察的半导体器件(S),可以在图像拾取部分(1),包括物镜(20)的光学系统(2)和固体浸没透镜(SIL)(3))之间移动 布置包括从半导体器件(S)到光学轴的光轴的插入位置和离开光轴的等待位置。 以两种控制方式进行观察。 在第一模式中,SIL(3)被布置在等待位置,并且基于半导体器件(S)的衬底的折射系数n0和厚度t0来校正焦点和像差。 在第二模式中,SIL(3)布置在插入位置,并且基于折射系数n0和基板的厚度t0以及折射系数n1,厚度d1和厚度t1来校正焦点和像差 SIL(3)的曲率半径R1。 因此,提供显微镜和样品观察方法以容易地进行对半导体器件的精细结构分析所需的必要的样品观察。