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1. 发明公开

KR1020080107520A 기판 무가열 방식에 의한 알에프-이온 플레이팅시 4층무반사 박막 无效
标题翻译： 4层涂层薄膜，用于通过射频放电进行非加热
公开(公告)号：KR1020080107520A
公开(公告)日：2008-12-11
申请号：KR1020070055380
申请日：2007-06-07
申请人： 정상배 , 정인철
发明人： 정상배 , 정인철
IPC分类号： C23C14/32 , C23C14/24 , C23C14/00
CPC分类号： C23C14/32 , C23C14/083 , C23C14/10
摘要： A 4 layer anti-reflective thin film is provided in the RF - ionplating by the substrate non-heating mode decreasing the necessary human agency in aftertreatment and carries the prime cost reduction effect. A 4 layer anti-reflective thin film in the RF - ionplating by the non-heating mode is characterized by RF-Power is authorized in substrate and RF-Plasma is created and the evaporation source is ionized with activating and the acceleration memorizes with the generated self-bias voltage to substrate and it is evaporated in substrate. Moreover, the DC power is authorized in substrate and the bias voltage of about -1000V which is higher than the self-bias voltage generated with RF-power with is created, the feature in which it more strongly makes evaporated in substrate ionized is carried.
摘要翻译：通过基板非加热模式在RF离子镀层中提供4层抗反射薄膜，从而减少了后处理中必要的人机代理，并且具有主要的降低成本效果。通过非加热模式在RF离子镀中的4层抗反射薄膜的特征在于RF-Power被授权在衬底中并且RF-Plasma被创建并且蒸发源被激活而电离并且加速度与所生成的对衬底的自偏压，并在衬底中蒸发。此外，在基板中授权DC功率，并且产生大约-1000V的偏置电压，其高于用RF功率产生的自偏压，其中更强烈地使基板蒸发的特征被电离化。

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