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1. 发明公开

KR1020180101128A 가시광선과 적외선 위장용 반사형 표시장치 및 이를 이용하는 능동형 위장장치 有权
公开(公告)号：KR1020180101128A
公开(公告)日：2018-09-12
申请号：KR1020170055285
申请日：2017-04-28
申请人： 전자부품연구원
发明人： 권순형 , 김원근
IPC分类号： F41H3/00 , G02F1/1335
摘要： 본발명의일실시예는, 투명한재질의상부기판, 상기상부기판의하면에배치되는투명한재질의상부전극층, 상기상부전극층의하면에배치되고, 유체및 서로다른극성으로대전되고, 전하량또는크기가상이한복수의입자를포함하는적어도하나이상의단위셀, 상기단위셀하부에배치되고, 상기상부전극층과전기장을형성하여화소영역을구획하는하부전극층, 상기하부전극층의하면에배치되고, 열적외선을차단하는금속층및 상기금속층의하면에배치되는하부기판을포함하는가시광선및 적외선위장용반사형표시장치및 이를이용하는능동형위장장치를제공한다.

2. 发明授权

KR101435502B1 액체를 이용한 플렉서블 에너지 전환 장치 有权
标题翻译：灵活的液体能量转换装置
公开(公告)号：KR101435502B1
公开(公告)日：2014-09-02
申请号：KR1020120136893
申请日：2012-11-29
申请人： 전자부품연구원 , 서울대학교산학협력단
发明人： 권순형 , 김원근 , 한철종 , 이정노 , 김연상 , 박준우
IPC分类号： F03G7/00 , H02N11/00 , F03G7/08
CPC分类号： H02N11/002 , F03G7/005 , H02N1/08
摘要： 본 발명은 액체를 이용한 플렉서블 에너지 전환 장치에 관한 것으로, 보다 상세하게는 전기습윤(electrowetting)현상의 반대현상을 응용하여 기계적 에너지를 전기 에너지로 전환시키는 방법 및 장치에 관한 것으로 한쌍의 전극사이에서 액체와의 접촉면을 변화시키고, 그에 따른 액체와의 접촉면 변화를 전기에너지 생성에 활용하여, 채널 막힘현상이나 윤활층, 혹은 채널상에 복잡하게 패터닝된 전극들을 필요로 하지 않도록 하므로써 장치의 단순화, 제조원가 절감과 함께 고장이 적은 에너지 전환장치를 구현한다는 효과가 있다.

3. 发明授权

KR101203477B1 반사형 컬러디스플레이 有权
标题翻译：反射型彩色DESPLAY
公开(公告)号：KR101203477B1
公开(公告)日：2012-11-21
申请号：KR1020100104659
申请日：2010-10-26
申请人： 전자부품연구원
发明人： 권순형 , 김원근 , 한철종
IPC分类号： G02F1/167 , G02F1/1335
摘要： 광학특성이 우수하고 이미지 품질이 높은 반사형 컬러디스플레이가 제안된다. 제안된 반사형 컬러디스플레이는 상부기판, 하부기판, 상부전극, 하부전극, 상부기판과 하부기판 사이에 배치되어 대전입자가 충전되어 있는 셀을 구획하는 격벽과 셀 내에 형성되는 380 nm 내지 780 nm에서 투과도가 35% 이상인 적색필터, 녹색필터 및 청색필터 중 적어도 하나를 포함하는 컬러필터를 포함한다.

4. 发明公开

KR1020100128892A 박막 트랜지스터 제조방법 및 제조된 박막 트랜지스터 有权
标题翻译：薄膜晶体管和薄膜晶体管的制造方法
公开(公告)号：KR1020100128892A
公开(公告)日：2010-12-08
申请号：KR1020090047557
申请日：2009-05-29
申请人： 전자부품연구원
发明人： 김영훈 , 한정인 , 김원근 , 박성규
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/7869 , H01L51/0558 , H01L51/105
摘要： PURPOSE: A manufacturing method of thin film transistor and a thin film transistor manufactured by the same are provided to be applied to an OLED(Organic Light Emitting Diode) requiring great amount of current by offering a short channel thin film transistor having a channel width of less than 1μm while using general exposing device. CONSTITUTION: A gate electrode(120), a gate insulating layer(130), and a source electrode(140) are successively formed on a substrate(110). A photoresist layer for forming the channel region on the source electrode is formed. The source electrode is etched on the gate insulating layer in order to form the drain electrode.
摘要翻译：目的：提供一种薄膜晶体管及其制造的薄膜晶体管的制造方法，其应用于需要大量电流的OLED（有机发光二极管），其通过提供具有沟道宽度的短沟道薄膜晶体管使用一般曝光装置时小于1μm。构成：在基板（110）上依次形成栅电极（120），栅极绝缘层（130）和源电极（140）。形成用于在源电极上形成沟道区的光致抗蚀剂层。在栅极绝缘层上蚀刻源电极以形成漏电极。

5. 发明公开

KR1020080047923A 광 감지 센서 및 그의 제조 방법 有权
标题翻译：光检测传感器及其制造方法
公开(公告)号：KR1020080047923A
公开(公告)日：2008-05-30
申请号：KR1020060117953
申请日：2006-11-27
申请人： 전자부품연구원
发明人： 김영훈 , 김원근 , 한정인
IPC分类号： H01L27/146 , H01L31/10
CPC分类号： H01L27/14612 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/1274
摘要： An optical detection sensor and a manufacturing method thereof are provided to downsize a switching transistor by forming the switching transistor using polycrystalline silicon. A storage capacitor stores charges generated from an amorphous silicon thin film transistor, and a polycrystalline silicon thin film transistor is switched to shift the charges stored in the storage capacitor. The polycrystalline silicon thin film transistor includes a polycrystalline silicon island(231) with a doped region for an ohmic contact, a first interlayer dielectric(240) enclosing the polycrystalline silicon island, a switching gate electrode(251) formed on the first interlayer dielectric, and a second interlayer dielectric(260) formed on the first interlayer dielectric. The first and second interlayer dielectrics are etched to form a pair of trenches exposing the doped region. A source electrode(331) and a drain electrode(332) are formed in the trenches.
摘要翻译：提供光学检测传感器及其制造方法，通过使用多晶硅形成开关晶体管来缩小开关晶体管的尺寸。存储电容器存储从非晶硅薄膜晶体管产生的电荷，并且切换多晶硅薄膜晶体管以移位存储在存储电容器中的电荷。多晶硅薄膜晶体管包括具有用于欧姆接触的掺杂区域的多晶硅岛（231），封装多晶硅岛的第一层间电介质（240），形成在第一层间电介质上的开关栅电极（251）和形成在第一层间电介质上的第二层间电介质（260）。蚀刻第一和第二层间电介质以形成暴露掺杂区域的一对沟槽。源极电极（331）和漏电极（332）形成在沟槽中。

6. 发明授权

KR100822270B1 박막 트랜지스터 및 그 제조방법 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：KR100822270B1
公开(公告)日：2008-04-16
申请号：KR1020060130796
申请日：2006-12-20
申请人： 전자부품연구원
发明人： 김영훈 , 김원근 , 한정인 , 이용욱
IPC分类号： H01L29/786
CPC分类号： H01L29/41733 , H01L29/458 , H01L29/78678
摘要： A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.
摘要翻译：提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。

7. 发明公开

KR1020060075644A 다결정 실리콘 박막 트랜지스터의 제조 방법 失效
标题翻译：用于制备多晶硅薄膜晶体管的方法
公开(公告)号：KR1020060075644A
公开(公告)日：2006-07-04
申请号：KR1020040114464
申请日：2004-12-28
申请人： 전자부품연구원
发明人： 김영훈 , 김원근 , 한정인 , 문대규 , 홍성제 , 곽민기 , 이찬재
IPC分类号： H01L29/786
CPC分类号： H01L29/78603 , H01L21/02675 , H01L21/2007 , H01L21/2026 , H01L21/2033 , H01L27/1266
摘要： 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 스퍼터링으로 비정질 실리콘 박막을 형성하기 때문에, 그 비정질 실리콘 박막에는 수소의 함량이 거의 없어, 탈수소화 공정을 생략하여 고분자 기판의 변형 및 비정질 실리콘 박막에서 크랙의 발생을 방지할 수 있어 소자의 특성이 우수해지는 효과가 있다.
다결정, 실리콘, 수소, 스퍼터링, 변형

8. 发明公开

KR1020040044755A 유무기 복합 이중구조 절연막 失效
标题翻译：双结构绝缘膜混合有机和无机
公开(公告)号：KR1020040044755A
公开(公告)日：2004-05-31
申请号：KR1020020072926
申请日：2002-11-22
申请人： 전자부품연구원
发明人： 박성규 , 문대규 , 한정인 , 김영훈 , 김원근
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345 , G02F1/1333 , G02F2202/02 , G02F2202/09
摘要： PURPOSE: A double structure insulation film mixed organic and inorganic is provided to reduce a surface distortion of a substrate by stacking an organic insulation layer on the substrate. CONSTITUTION: A gas barrier layer(2) is formed on a polymer substrate(1). A gate electrode(3) is formed on the gas barrier layer(2). An organic insulation layer(4) is formed on the gate electrode(3). An inorganic insulation layer(5) is formed on the organic insulation layer(4). A source-drain electrode(6) and a semiconductor layer(7) used as a thin film transistor are formed on the inorganic insulation layer(5). The organic insulation layer(4) is made of anyone material of polycarbonate, polyimide and acryl which have below 2.5GPa of Young's module and superior mechanical and electrical characteristics. The inorganic insulation layer(5) is made of SiO2 having 80-100GPa of Young's module and its thickness is within 200nm.
摘要翻译：目的：提供混合有机和无机的双重结构绝缘膜，以通过在基板上层叠有机绝缘层来减小基板的表面变形。构成：在聚合物基材（1）上形成阻气层（2）。在阻气层（2）上形成栅电极（3）。在栅电极（3）上形成有机绝缘层（4）。在有机绝缘层（4）上形成无机绝缘层（5）。在无机绝缘层（5）上形成用作薄膜晶体管的源 - 漏电极（6）和半导体层（7）。有机绝缘层（4）由聚碳酸酯，聚酰亚胺和丙烯酸树脂的任何材料制成，其杨氏模量小于2.5GPa，具有优异的机械和电气特性。无机绝缘层（5）由具有80-100GPa的杨氏模块的SiO 2制成，其厚度在200nm以内。

9. 发明授权

KR100385401B1 5선 전극 아날로그 저항막 방식의 터치 패널 有权
标题翻译： 5선전극아날로그저항식방식의터치패널
公开(公告)号：KR100385401B1
公开(公告)日：2003-05-23
申请号：KR1020010008476
申请日：2001-02-20
申请人： 전자부품연구원 , 주식회사 이노터치테크놀로지
发明人： 곽민기 , 한정인 , 김원근 , 박성규 , 한재흥
IPC分类号： G06F3/045 , G06F3/041
摘要： PURPOSE: A touch panel of a 5-wired electrode analogue resistor film method is provided to maintain a valid operation area having a sufficient straight property by separating a resistor chain of a touch panel of a 5-wired electrode system from new-formed voltage security pattern, extending a valid operation area of a sensor, and securing/changing a unit size and a voltage security pattern of the resistor chain. CONSTITUTION: A uniform resistor film(10) of a touch panel is formed on a base plate(12). A connection sheet is formed at the lower surface of a film using a transparent conductive film and combined on the resistor film(10) through the medium of an insulation frame at a predetermined interval. A resistor element(50) is arrayed for being overlapped with an adjacent unit according to units by making a predetermined formed unit(52) be formed as a discontinuously chain for exceeding an increasing rate of a surface area of a sensor, thereby supplying a linear output response by reducing a curve of equipotential lines according to the edge of the sensor. A voltage securing pattern(60) is arrayed for compensating a voltage deviation at an irregular interval by a detailed pattern through an etching of a surface of the resistor film(10) according to the inner edge of the resistor element(50) at a form completely separated from the resistor element(50).
摘要翻译：目的：通过将5线电极系统的触摸面板的电阻器链与新形成的电压安全性分开来提供5线电极模拟电阻膜方法的触摸面板，以保持具有足够直线性的有效操作区域模式，扩展传感器的有效操作区域，以及确保/改变电阻器链的单元尺寸和电压安全模式。构成：触板的均匀电阻膜（10）形成在基板（12）上。使用透明导电膜在膜的下表面形成连接片，并通过绝缘框架的介质以预定的间隔将该连接片组合在电阻膜（10）上。通过使预定的成形单元（52）形成为不连续链以超过传感器的表面积的增加率，将电阻元件（50）排列成与相邻单元按照单元重叠，由此提供线性通过根据传感器的边缘减少等势线的曲线来实现输出响应。通过根据电阻器元件（50）的内边缘蚀刻电阻器膜（10）的表面，形成电压保护图案（60）以通过详细图案补偿不规则间隔处的电压偏差与电阻元件（50）完全分离。

10. 发明公开

KR1020020089082A 플라즈마 사인 디스플레이의 격벽 제조방법 无效
标题翻译：制造用于等离子体显示的障碍物RIBS的方法
公开(公告)号：KR1020020089082A
公开(公告)日：2002-11-29
申请号：KR1020010028414
申请日：2001-05-23
申请人： 전자부품연구원
发明人： 곽민기 , 한정인 , 김원근 , 박성규
IPC分类号： H01J9/24 , H01J11/36
摘要： PURPOSE: A method for manufacturing barrier ribs for a plasma sign display is provided to reduce barrier rib manufacturing procedures by easily forming an insulation film and barrier ribs at the substrate through the use of a squeeze device and open mask. CONSTITUTION: A method comprises the steps of forming a metal electrode(6) onto a glass substrate(10); and disposing an open mask at the glass substrate where the metal electrode is formed, and forming an insulation layer(7b) and barrier ribs(7a) at the same time by using a squeeze device(20) with a mold(22) of a predetermined shape. The insulation layer and barrier ribs are made of a powder paste obtained by synthesizing an insulating material and a binder. The insulating material is BaTiO3, Y2O3 or Al2O3. Since the insulation film and barrier ribs are simultaneously formed through the use of the squeeze device having a predetermined shape, the necessity of repeating screen printing is eliminated, to thereby simplify manufacturing procedures.
摘要翻译：目的：提供一种用于制造等离子体标志显示器的隔壁的方法，以通过使用挤压装置和开口掩模在基板上容易地形成绝缘膜和阻挡肋来减少隔壁制造程序。构成：一种方法包括在玻璃基板（10）上形成金属电极（6）的步骤; 并且在形成金属电极的玻璃基板上设置开口掩模，并且通过使用具有模具（22）的挤压装置（20）同时形成绝缘层（7b）和阻挡肋（7a）预定形状。绝缘层和隔壁由通过合成绝缘材料和粘合剂获得的粉末糊料制成。绝缘材料为BaTiO3，Y2O3或Al2O3。由于通过使用具有预定形状的挤压装置同时形成绝缘膜和隔肋，因此消除了重复丝网印刷的必要性，从而简化了制造步骤。

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