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1. 发明授权

KR100450331B1 온도 보상용 박막 콘덴서 失效
标题翻译： 온도보상용박막콘덴서
公开(公告)号：KR100450331B1
公开(公告)日：2004-10-01
申请号：KR1020010050657
申请日：2001-08-22
申请人： 알프스 덴키 가부시키가이샤
发明人： 기따가와히또시 , 사사끼마꼬또 , 사사끼요리히꼬
IPC分类号： H01G4/33
CPC分类号： H01G4/258 , H01L21/0212 , H01L21/02126 , H01L21/312 , H01L21/3127 , H01L21/3143 , H01L27/0805 , H01L28/40 , H01L28/56
摘要： A thin film capacitor with an arbitrary temperature coefficient of capacitance can be obtained by using only two kinds of dielectric thin film capacitor, wherein the dielectric thin film (3) having a prescribed temperature coefficient of capacitance is formed on the surface of a lower electrode (2) formed on a substrate (1), a second dielectric film (4) having a different temperature coefficient of capacitance from the temperature coefficient of capacitance of the prescribed temperature coefficient of capacitance is formed so as to cover from the upper edge of the dielectric thin film to the step portion of the dielectric thin film, and an upper electrode (5) is formed so as to cover the dielectric thin film and second dielectric film, and wherein the temperature coefficient of capacitance is determined by adjusting the overlap area of the lower electrode and upper electrode between the lower electrode and upper electrode.
摘要翻译：具有任意电容温度系数的薄膜电容器可以仅使用两种介质薄膜电容器来获得，其中具有规定的电容温度系数的介质薄膜（3）形成在下电极的表面上（ 2）形成在基板（1）上时，形成具有与所述规定的电容温度系数的电容的温度系数不同的电容温度系数的第二电介质膜（4），以覆盖所述电介质的上边缘在所述电介质薄膜的台阶部分上形成薄膜，并且形成上电极（5）以覆盖所述电介质薄膜和第二电介质膜，并且其中所述电容的温度系数通过调节下电极和上电极在下电极和上电极之间。＆lt;图像＆GT;

2. 发明授权

KR100382809B1 산화물 투명도전막과 산화물 투명도전막 형성용 타겟 및그 산화물 투명도전막을 구비한 기판의 제조방법과전자기기 및 액정표시장치 有权
标题翻译： 산화물투명도전막과산화물투명도전막형성용타겟및그산화물물명도전막을구비한기판의제조방법과전자기기및액정표시장치
公开(公告)号：KR100382809B1
公开(公告)日：2003-05-09
申请号：KR1020000070345
申请日：2000-11-24
申请人： 알프스 덴키 가부시키가이샤 , 엘지디스플레이 주식회사
发明人： 사사끼마꼬또 , 채기성 , 아라이가즈유끼
IPC分类号： G02F1/136
CPC分类号： C23C14/5806 , C03C17/2453 , C03C17/253 , C03C2217/211 , C03C2217/215 , C03C2217/216 , C03C2217/23 , C23C14/086 , C23C14/3414 , C23C30/00 , G02F1/13439 , H01B1/08
摘要： A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed.
摘要翻译：透明导电氧化物膜由包含氧化铟，氧化锡和氧化锌的复合氧化物构成，并且包括连接部分，其中锡含量至少在连接部分中高于锌含量，并且至少连接部分截面具有结晶性。或者，在透明导电氧化物膜中，锌与锌，铟和锡的总和的原子百分比在约1原子％至约9原子％的范围内，锡与锌的原子比为约1 或更多，锡与锌，铟和锡的总量的原子百分比为约20原子％或更低，并且其至少一部分具有结晶性。提供具有至少一部分电路的透明导电氧化膜的电子设备，用于形成透明导电氧化膜的靶和用于制造具有透明导电氧化膜的基板的方法是也披露。

3. 发明公开

KR1020020050734A 온도 보상용 박막 콘덴서 및 전자 기기 失效
标题翻译：温度补偿薄膜电容器和电子器件
公开(公告)号：KR1020020050734A
公开(公告)日：2002-06-27
申请号：KR1020010081832
申请日：2001-12-20
申请人： 알프스 덴키 가부시키가이샤
发明人： 아오끼마사히로 , 사사끼마꼬또 , 기따가와히또시 , 후꾸이히로후미
IPC分类号： H01G4/33
CPC分类号： H01G4/18
摘要： PURPOSE: A temperature-compensating thin-film capacitor is provided to realize smaller, thinner, and lighter capacitor and to have a function of temperature compensation by using dielectric materials which have a low specific inductive capacity and of which temperature dependence is controllable. CONSTITUTION: The temperature-compensating thin-film capacitor(1) includes a first dielectric thin-film(5) having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50ppm/°C or more, and includes a second dielectric thin-film(4) having capacitance-temperature coefficient with an absolute value of 50 ppm/°C or less, in which the first and the second dielectric thin-films are placed between electrodes. Difference in capacitance of such a thin-film capacitor is reduced, in which the difference is due to processing accuracy.
摘要翻译：目的：提供一种温度补偿薄膜电容器，以实现更小，更薄和更轻的电容器，并通过使用具有低的电感率和可控温度依赖性的介电材料来实现温度补偿的功能。构成：温度补偿薄膜电容器（1）包括具有4.0或更小的电感率和50ppm /℃或更高的线性热膨胀系数的第一介电薄膜（5），并且包括第二介电薄膜具有绝缘值为50ppm /℃以下的电容 - 温度系数的电介质薄膜（4），其中第一和第二介电薄膜位于电极之间。这种薄膜电容器的电容差减小，其中差异是由于加工精度。

4. 发明公开

KR1020020017983A 온도 보상용 박막 콘덴서 失效
标题翻译：薄膜电容器用于温度补偿
公开(公告)号：KR1020020017983A
公开(公告)日：2002-03-07
申请号：KR1020010050657
申请日：2001-08-22
申请人： 알프스 덴키 가부시키가이샤
发明人： 기따가와히또시 , 사사끼마꼬또 , 사사끼요리히꼬
IPC分类号： H01G4/33
CPC分类号： H01G4/258 , H01L21/0212 , H01L21/02126 , H01L21/312 , H01L21/3127 , H01L21/3143 , H01L27/0805 , H01L28/40 , H01L28/56
摘要： PURPOSE: A thin film capacitor for temperature compensation is provided to make it easy to provide a thin film capacitor having an arbitrary temperature coefficient of capacitance using only two kinds of dielectric thin film materials. CONSTITUTION: A dielectric thin film(3) having a temperature coefficient of capacitance is formed on the surface of a lower electrode(2) formed on a substrate(1), a second dielectric film(4) having a different temperature coefficient of capacitance from the temperature coefficient of capacitance is formed so as to cover from the upper edge of the dielectric thin film to the step portion of the dielectric thin film, and an upper electrode(5) is formed so as to cover the dielectric thin film and second dielectric film, and wherein the temperature coefficient of capacitance is determined by adjusting the overlap area of the lower electrode and upper electrode between the lower electrode and upper electrode.
摘要翻译：目的：提供用于温度补偿的薄膜电容器，使得仅使用两种电介质薄膜材料便于提供具有任意温度系数的薄膜电容器。构成：在形成在基板（1）的下电极（2）的表面上形成具有电容温度系数的电介质薄膜（3），具有不同的电容温度系数的第二电介质膜（4）电容的温度系数形成为从电介质薄膜的上边缘到电介质薄膜的台阶部分覆盖，并且形成上电极（5）以覆盖电介质薄膜和第二电介质膜，并且其中通过调节下电极和上电极之间的下电极和上电极的重叠面积来确定电容的温度系数。

5. 发明授权

KR100450101B1 온도 보상용 박막 콘덴서 失效
标题翻译： 온도보상용박막콘덴서
公开(公告)号：KR100450101B1
公开(公告)日：2004-09-24
申请号：KR1020010048689
申请日：2001-08-13
申请人： 알프스 덴키 가부시키가이샤
发明人： 기따가와히또시 , 사사끼마꼬또
IPC分类号： H01G4/33
CPC分类号： H01G4/20 , H01L28/40
摘要： The present invention provides a thin-film capacitor (1) which can easily meet requirements of reduction in size, thickness, and weight and which can perform temperature compensation. In addition to the features described above, the present invention provides a thin-film capacitor having a superior Q factor in a high frequency band. The thin-film capacitor of the present invention has at least one first dielectric thin-film (4) and at least one second dielectric thin-film (5) having a dielectric constant different from that of the first dielectric thin-film, wherein these thin-films are provided between a pair of electrodes (3,7). In addition, in the present invention, the absolute value of the temperature coefficient of capacitance of the first dielectric thin-film is 50 ppm/ DEG C or less, and the temperature coefficient of capacitance of the second dielectric thin-film is a negative value and has an absolute value of 500 ppm/ DEG C or more.
摘要翻译：本发明提供一种薄膜电容器（1），其能够容易地满足减小尺寸，厚度和重量的要求并且能够执行温度补偿。除了上述特征之外，本发明还提供一种在高频带中具有优良Q因子的薄膜电容器。本发明的薄膜电容器具有至少一个第一电介质薄膜（4）和至少一个具有与第一电介质薄膜的介电常数不同的介电常数的第二电介质薄膜（5），其中这些在一对电极（3,7）之间设置薄膜。另外，在本发明中，第1电介质薄膜的电容的温度系数的绝对值为50ppm /℃以下，第2电介质薄膜的电容的温度系数为负值并具有500ppm /℃或更高的绝对值。＆lt;图像＆GT;

6. 发明授权

KR100428225B1 온도 보상용 박막 콘덴서 및 전자 기기 失效
标题翻译： 온도보상용박막콘덴콘덴서및전자기기
公开(公告)号：KR100428225B1
公开(公告)日：2004-04-28
申请号：KR1020010081832
申请日：2001-12-20
申请人： 알프스 덴키 가부시키가이샤
发明人： 아오끼마사히로 , 사사끼마꼬또 , 기따가와히또시 , 후꾸이히로후미
IPC分类号： H01G4/33
CPC分类号： H01G4/18
摘要： A temperature-compensating thin-film capacitor (1) includes a first dielectric thin-film (5) having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50 ppm/ DEG C or more, and includes a second dielectric thin-film (4) having capacitance-temperature coefficient with an absolute value of 50 ppm/ DEG C or less, in which the first and the second dielectric thin-films are placed between electrodes. Difference in capacitance of such a thin-film capacitor is reduced, in which the difference is due to processing accuracy. Also, miniaturization, thinning, and lightening of the thin-film capacitor is achieved. An electronic device having the temperature-compensating thin-film is provided. The temperature stability of the electronic device such as a portable electronic device, microwave communication equipment, or the like is excellent.
摘要翻译：本发明提供一种温度补偿型薄膜电容器（1），其具有介电常数为4.0以下且线热膨胀系数为50ppm /℃以上的第一电介质薄膜（5），并且包含第二电介质具有绝对值为50ppm /℃或更小的电容 - 温度系数的薄膜（4），其中第一和第二电介质薄膜放置在电极之间。这种薄膜电容器的电容差异减小了，其中差异是由加工精度引起的。此外，实现了薄膜电容器的小型化，薄型化和轻量化。＆lt; ??＆gt;提供一种具有温度补偿薄膜的电子装置。诸如便携式电子设备，微波通信设备等的电子设备的温度稳定性非常好。＆lt;图像＆GT;

7. 发明公开

KR1020020016508A 온도 보상용 박막 콘덴서 失效
标题翻译：用于补偿温度的薄膜电容器
公开(公告)号：KR1020020016508A
公开(公告)日：2002-03-04
申请号：KR1020010048689
申请日：2001-08-13
申请人： 알프스 덴키 가부시키가이샤
发明人： 기따가와히또시 , 사사끼마꼬또
IPC分类号： H01G4/33
CPC分类号： H01G4/20 , H01L28/40
摘要： PURPOSE: To provide a thin-film capacitor, capable of facilitating reductions in size, thickness and weight and compensating temperature and to provide a thin film capacitor satisfying the above features and further having a superior Q-value in a high frequency band. CONSTITUTION: The thin-film capacitor comprises two or more first dielectric thin films 4 and 4 and second dielectric thin films 5, having different permittivities between a pair of electrodes 3 and 7. In this capacitor, the absolute value of a capacity temperature coefficient of the first thin film can be set to 50 ppm/°C or less, and a capacity temperature coefficient of the second thin film is negative, and its absolute value can be set to 500 ppm/°C or more.
摘要翻译：目的：提供一种能够减小尺寸，厚度和重量以及补偿温度的薄膜电容器，并提供满足上述特征并且在高频带中具有优异Q值的薄膜电容器。构成：薄膜电容器包括在一对电极3和7之间具有不同介电常数的两个或更多个第一介电薄膜4和4以及第二介电薄膜5。在该电容器中，容量温度系数的绝对值第一薄膜可以设定为50ppm /℃以下，第二薄膜的容量温度系数为负，其绝对值可以设定为500ppm /℃以上。

8. 发明公开

KR1020010061955A 산화물 투명도전막과 산화물 투명도전막 형성용 타겟 및그 산화물 투명도전막을 구비한 기판의 제조방법과전자기기 및 액정표시장치 有权
标题翻译：氧化物透明导电膜，其形成目的物，具有它们的基材的制造方法，电子设备和LCD
公开(公告)号：KR1020010061955A
公开(公告)日：2001-07-07
申请号：KR1020000070345
申请日：2000-11-24
申请人： 알프스 덴키 가부시키가이샤 , 엘지디스플레이 주식회사
发明人： 사사끼마꼬또 , 채기성 , 아라이가즈유끼
IPC分类号： G02F1/136
CPC分类号： C23C14/5806 , C03C17/2453 , C03C17/253 , C03C2217/211 , C03C2217/215 , C03C2217/216 , C03C2217/23 , C23C14/086 , C23C14/3414 , C23C30/00 , G02F1/13439 , H01B1/08
摘要： PURPOSE: An oxide transparent conductive film, a target for forming the same, a manufacturing method of substrate having the same, electronic equipment and an LCD are provided to realize a fine etching in weak acid, have a low contact resistance and an excellent optical transmittance, have a low resistance even in a TCP(Tape Carrier Package) connection as well as prevent the variance of resistance according to the lapse of time. CONSTITUTION: The oxide transparent conductive film is formed of complex oxide containing indium oxide, tin oxide and Zn oxide, has at least one connecting part with another conductors. In the connecting part, the content of tin is greater than that of Zn and crystalline structure is formed. The target for forming the oxide transparent conductive film also consists of the complex oxide. Further, the manufacturing method consists of a step forming a film of the complex oxide, a step etching the film to pattern the film, and then a step performing the heat treatment against the patterned film.
摘要翻译：目的：提供一种氧化物透明导电膜，其形成靶，其制造方法，电子设备和LCD，以在弱酸中实现精细蚀刻，具有低接触电阻和优异的光透射率即使在TCP（磁带载体封装）连接中也具有低电阻，并且根据时间的流逝防止电阻的变化。构成：氧化物透明导电膜由含有氧化铟，氧化锡和氧化锌的复合氧化物形成，与另一导体具有至少一个连接部分。在连接部分，锡的含量大于Zn的含量，形成晶体结构。形成氧化物透明导电膜的靶也由复合氧化物构成。此外，制造方法包括形成复合氧化物的膜的步骤，对膜进行刻蚀的步骤，然后对图案化膜进行热处理的步骤。

9. 发明授权

KR100163223B1 기판 표면전위 측정방법 및 플라즈마 장치 失效
标题翻译：测量基片表面电极位置的方法
公开(公告)号：KR100163223B1
公开(公告)日：1999-03-20
申请号：KR1019940028848
申请日：1994-11-04
申请人： 알프스 덴키 가부시키가이샤 , 오미 다다히로 , 가부시키가이샤 프론테크
发明人： 사사끼마꼬또 , 후꾸이히로후미 , 아이하라마사미 , 후꾸다고우이찌 , 가사마야스히꼬 , 오미다다히로
IPC分类号： G01R31/302
CPC分类号： G01R29/12 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： 본 발명은 기판의 재질에 관계없이 기판전위를 정확하게 측정할 수 있는 표면전위 측정장치 및 이온 에너지를 정확히 측정하고, 나아가서는 이온 에너지를 제어할 수 있는 플라즈마 장치를 제공하는 것을 목적으로 한다.
플라즈마 장치의 기판 표면전위를 측정하는 기판 표면전위 측정장치로서, 기판을 지지하는 서셉터 전극에 전기적으로 접속하기 위한 단자와, 상기 단자와 어스사이에 설치된 제1 콘덴서와, 상기 단자의 전위 측정수단을 가지고, 상기 전위 측정수단에 의하여 측정되는 서셉터 전극의 전위로부터 상기 기판의 표면전위를 구하는 것을 특징으로 한다.

10. 发明公开

KR1019950015562A 기판 표면전위 측정방법 및 플라즈마 장치 失效
公开(公告)号：KR1019950015562A
公开(公告)日：1995-06-17
申请号：KR1019940028848
申请日：1994-11-04
申请人： 알프스 덴키 가부시키가이샤 , 오미 다다히로 , 가부시키가이샤 프론테크
发明人： 사사끼마꼬또 , 후꾸이히로후미 , 아이하라마사미 , 후꾸다고우이찌 , 가사마야스히꼬 , 오미다다히로
IPC分类号： G01R31/302

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