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    • 7. 发明公开
    • 진공 증착 방법
    • 真空沉积法
    • KR1020070004042A
    • 2007-01-05
    • KR1020067021550
    • 2005-04-15
    • 쌩-고벵 글래스 프랑스
    • 나다우드,니콜라스마트만,에릭
    • C23C14/46
    • C03C17/3618C03C17/002C03C17/3411C03C17/36C03C17/3626C03C17/3644C03C17/3652C03C2217/734C23C14/0052C23C14/46
    • The invention relates to a method for the vacuum deposition of at least one thin layer on a portion of the surface of a substrate. The inventive method is characterised in that it comprises the following steps consisting in: selecting at least one sputtering species which is chemically inactive or active in relation to a material to be sputtered; using at least one linear ion source, which is positioned inside an industrial-size installation, in order to generate a collimated ion beam which mainly comprises the sputtering species; directing the beam towards at least one target based on the material to be sputtered; and positioning at least one portion of the surface of the substrate opposite the target, such that the material sputtered by the ionic bombardment of the target or a material resulting from the reaction of the sputtered material with at least one of the sputtering species is deposited on said portion of surface. ® KIPO & WIPO 2007
    • 本发明涉及一种在衬底表面的一部分上真空沉积至少一层薄层的方法。 本发明的方法的特征在于其包括以下步骤:选择相对于待溅射的材料具有化学惰性或活性的至少一种溅射物质; 使用至少一个线性离子源,其位于工业尺寸的装置内,以产生主要包括溅射物质的准直离子束; 基于待溅射的材料将光束引向至少一个靶; 并且将所述基板的与所述靶相对的表面的至少一部分定位,使得由所述靶的离子轰击溅射的材料或所述溅射材料与所述溅射物质中的至少一种的反应产生的材料沉积在 表面的部分。 ®KIPO&WIPO 2007