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    • 1. 发明公开
    • 관상동맥석회화 수준 변화 예측장치 및 예측방법
    • 用于预测CAC级别变化的装置和方法
    • KR1020130104883A
    • 2013-09-25
    • KR1020120026812
    • 2012-03-15
    • 삼성전자주식회사사회복지법인 삼성생명공익재단
    • 이지현감혜진김하영유상현최윤호강미라박정의성지동신희영조성원조수진
    • G06F19/00G06Q50/22
    • G06N99/005G06F19/00G16H50/20G16H50/30
    • PURPOSE: An apparatus for predicting level change of coronary artery calcium (CAC) and a prediction method thereof are provided to increase prevention possibility of heart disease and stroke, by predicting the population group in which degree of danger of the coronary artery calcium is expected to increase in the future. CONSTITUTION: An input part (100) receives medical examination data about coronary artery calcium of a patient and task information about the medical examination data. A cluster designation part (110) designates a belonging cluster to the medical examination data about the coronary artery calcium of the patient on the ground of the characteristics of the patient. An influence variable value extraction part (120) extracts influence variable value used in collecting influence variables of the belonging cluster from the medical examination data. A prediction model learning part (140) performs machine learning, by applying the influence variable value to a prediction model corresponding to the belonging cluster. A prediction part obtains prediction result, by applying the influence variable value to the prediction model. [Reference numerals] (100) Input part; (110) Cluster designation part; (120) Influence variable value extraction part; (130) Prediction model storage unit; (140) Prediction model learning part; (150) Prediction unit; (AA) Medical examination data and job information; (BB) Prediction result
    • 目的:提供一种用于预测冠状动脉钙(CAC)水平变化的装置及其预测方法,通过预测冠状动脉钙危险程度预计为增加心脏病和中风的预防可能性 未来增加 构成:输入部(100)接收关于患者的冠状动脉钙的医学检查数据,以及关于医疗检查数据的任务信息。 群体指定部分(110)基于患者的特征,将关于冠状动脉钙的医学检查数据的属性集合指定到患者的特征。 影响变量提取部(120)从医疗检查数据中提取用于收集所属簇的影响变量的影响变量值。 预测模型学习部(140)通过将影响变量值应用于与属性簇对应的预测模型来进行机器学习。 预测部通过将影响变量值应用于预测模型来获得预测结果。 (附图标记)(100)输入部; (110)集群指定部分; (120)影响变量提取部分; (130)预测模型存储单元; (140)预测模型学习部分; (150)预测单位; (AA)体检资料及工作资料; (BB)预测结果
    • 3. 发明授权
    • 암호화 장치 및 암호화 방법
    • 数据加密装置及方法
    • KR100813954B1
    • 2008-03-14
    • KR1020030002965
    • 2003-01-16
    • 삼성전자주식회사
    • 최양림최윤호
    • H04L9/16
    • H04N7/1675H04L9/0662H04L2209/30H04N21/2347H04N21/26613H04N21/4405H04N21/835
    • 본 발명은 오디오 비디오(A/V) 스트림의 암호화 기술에 관한 것으로, 구체적으로는 오디오 비디오 스트림의 암호화 장치 및 방법, 오디오 비디오 스트림의 암호화 시에 사용되는 암호화 키(encryption key)의 생성시에 필요한 난수(random number)를 생성하는 장치 및 방법에 관한 것이다. 본 발명의 암호화 장치는 오디오 비디오 스트림을 입력받아 소정의 처리를 수행하고, 난수 생성에 사용되는 소정의 데이터를 생성하여 출력하는 콘텐트 처리부; 상기 콘텐트 처리부로부터 상기 소정의 데이터를 입력받아 난수를 생성하는 난수 생성부; 상기 난수를 포함하는 정보를 입력받아 암호화키를 생성하는 암호화키 생성부; 및 상기 암호화키를 사용하여 상기 콘텐트 처리부에서 출력된 오디오 비디오 스트림을 암호화하는 콘텐트 암호화부를 구비한다. 본 발명에서 제시한 방법을 사용하여 생성된 난수는 비디오 데이터의 통계적 특성을 이용하여 생성되었기 때문에 랜덤 특성(randomness)이 좋은 효과가 있다.
    • 4. 发明公开
    • 에러 정정 회로, 그 방법 및 상기 회로를 구비하는 반도체메모리 장치
    • 误差校正电路,包括电路的方法和半导体存储器件
    • KR1020080018560A
    • 2008-02-28
    • KR1020060080854
    • 2006-08-25
    • 삼성전자주식회사
    • 임용태최윤호
    • G11C29/42
    • G11C7/1006G06F11/1008G11C2029/0411G11C2207/104
    • An error correction circuit, a method thereof and a semiconductor memory device including the circuit are provided to improve data read time and performance of the semiconductor memory device, by changing the time required in error position detection and correction according to the number of error bits. Two error position detectors(451,452) operate in parallel, and have different error position calculation time. A judgment part judges error type. A main control part(443) determines final error position on the basis of the error type and the error position calculated in at least one error position detector. An ECC(Error Correction Circuit)(320) further comprises a partial syndrome generator calculating more than two partial syndromes using ECC code data and a coefficient calculator calculating coefficients of an error position equation using the partial syndromes.
    • 提供了一种纠错电路,其方法和包括该电路的半导体存储器件,通过根据错误位数来改变误差位置检测和校正所需的时间,从而提高半导体存储器件的数据读取时间和性能。 两个误差位置检测器(451,452)并联运行,具有不同的误差位置计算时间。 判断部分判断错误类型。 主控制部件(443)基于在至少一个误差位置检测器中计算的误差类型和误差位置来确定最终误差位置。 ECC(纠错电路)(320)还包括使用ECC码数据计算多于两个部分综合征的部分校正子生成器,以及使用部分校正子计算误差位置方程的系数的系数计算器。
    • 7. 发明公开
    • 시스템 보드 검사 장치 및 방법
    • 测试系统板的装置和方法
    • KR1020070012597A
    • 2007-01-26
    • KR1020050067093
    • 2005-07-23
    • 삼성전자주식회사
    • 최윤호
    • G01R31/28
    • G06F11/26
    • A system board testing device and method are provided to shorten the time for inspecting a system board and to increase the productivity of the system board or a computing device using the system board. A system board testing device(200) includes a sensing unit(210) for detecting a predetermined signal output from a system board; an analyzing unit(220) for analyzing an inspection progressive state of the system board by the detected signal; and a control signal output unit(230) for outputting a control signal to make the system board execute the next inspection work according to the analysis result. The signal output from the system board is an optical or sound signal. The analyzing unit displays the present inspection item, an error, and a completion state of inspection work through a display unit(240).
    • 提供了一种系统板测试装置和方法,以缩短检查系统板的时间并提高系统板或使用系统板的计算设备的生产率。 系统板测试装置(200)包括用于检测从系统板输出的预定信号的感测单元(210) 分析单元,用于通过检测到的信号分析系统板的检查进行状态; 以及用于输出控制信号以使系统板根据分析结果执行下一检查工作的控制信号输出单元(230)。 从系统板输出的信号是光或声信号。 分析单元通过显示单元(240)显示当前检查项目,错误和检查工作的完成状态。
    • 9. 发明公开
    • 샤워 헤드 어셈블리 및 이를 포함하는 반도체 기판 가공장치
    • 淋浴头组件及其加工半导体基板的装置
    • KR1020070000067A
    • 2007-01-02
    • KR1020050055507
    • 2005-06-27
    • 삼성전자주식회사
    • 권현철서정석최윤호박성근고영완
    • H01L21/20
    • C23C16/45565H01L21/67011
    • A shower head assembly and a semiconductor substrate processing apparatus with the same are provided to restrain the generation of particles on a first and second porous plates by separating easily the first and second porous plates without the damage and deformation using an improved separation screw structure. A shower head assembly includes a shower head cover for being connected with a gas supply unit(170), a first porous plate(140) attached to the shower head cover, a second porous plate, and a separation screw. The second porous plate(150) is connected to the shower head cover. The second porous plate has a screw hole. The separation screw(160) is inserted into the screw hole of the second porous plate. The separation screw is capable of separating easily the second porous plate from the first porous plate. The separation screw has a flat end portion or a cylindrical end portion. The separation screw is made of one selected from a group consisting of stainless steel, aluminium, nickel, chrome, ceramic, quartz, or sapphire.
    • 提供了一种淋浴头组件及其半导体基板处理装置,以通过使用改进的分离螺杆结构容易地分离第一和第二多孔板而不损坏和变形来抑制颗粒在第一和第二多孔板上的产生。 淋浴头组件包括与气体供应单元(170)连接的淋浴喷头盖,附接到喷头盖的第一多孔板(140),第二多孔板和分离螺钉。 第二多孔板(150)连接到喷头盖。 第二多孔板具有螺纹孔。 分离螺钉(160)插入第二多孔板的螺纹孔中。 分离螺杆能够容易地将第二多孔板与第一多孔板分离。 分离螺杆具有平坦的端部或圆柱形端部。 分离螺杆由选自不锈钢,铝,镍,铬,陶瓷,石英或蓝宝石的一个组成。
    • 10. 发明公开
    • 플라즈마 형성 방법 및 이를 이용한 막 형성 방법
    • 产生等离子体的方法和使用其形成层的方法
    • KR1020060129605A
    • 2006-12-18
    • KR1020050050168
    • 2005-06-13
    • 삼성전자주식회사
    • 서정훈박영욱홍진기구경범이은택최윤호
    • H01L21/205
    • C23C16/5096C23C16/14C23C16/34H01L21/28556H01L21/76841H01L21/76856
    • A plasma forming method and a film forming method using the same are provided to reduce the damage due to plasma and to form uniformly a film by forming and maintaining a plasma region using various inert gases. A plasma region is formed in a sealed space by supplying a first material containing a first gas into the sealed space(S110). The plasma region is kept by supplying a second material containing a second gas(S120). A first flow rate of the first material is smaller than a second flow rate of the second material. A first atomic weight of the first gas is larger than a second atomic weight of the second gas. The first gas is one selected from a group consisting of Ne, Ar, Kr, Xe and Rn. The second gas is one selected from a group consisting of He, Ne, Ar, Kr, and Xe.
    • 提供等离子体形成方法和使用该等离子体形成方法的成膜方法,以减少由等离子体引起的损伤,并且通过使用各种惰性气体形成和保持等离子体区域来均匀地形成膜。 通过向密封空间供给含有第一气体的第一材料,在密封空间中形成等离子体区域(S110)。 通过供给含有第二气体的第二材料来保持等离子体区域(S120)。 第一材料的第一流量小于第二材料的第二流量。 第一气体的第一原子量大于第二气体的第二原子量。 第一种气体是选自Ne,Ar,Kr,Xe和Rn的一种气体。 第二气体是选自He,Ne,Ar,Kr和Xe的一种气体。