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1. 发明公开

KR1020140060376A 소수성 유기물을 함유하는 도핑 그래핀 구조체, 그의 제조방법 및 이를 구비하는 투명전극, 표시소자와 태양전지 审中-实审
标题翻译：包含疏水性有机物的疏水性石墨组合物，其制备方法和透明电极，显示装置和包含电极的太阳能电池
公开(公告)号：KR1020140060376A
公开(公告)日：2014-05-20
申请号：KR1020120117905
申请日：2012-10-23
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 윤선미 , 신현진 , 최재영 , 최원묵 , 김수민 , 이영희
IPC分类号： C01B31/02 , B82B1/00 , B41M3/12
CPC分类号： H01L29/1606 , H01G9/20 , H01G9/2022 , H01G9/2077 , H01L21/04 , H01L21/0405 , H01L29/16 , H01L51/0045 , H01L51/442 , H01L51/5203 , Y02E10/50 , Y02E10/542 , Y02E10/549 , C01B32/194 , B41M3/12 , B82B1/008
摘要： The moisture and temperature stability in the doped graphene is improved by forming a hydrophobic organic layer on the surface of the doped graphene on which dopants are doped. The degradation of the doped graphene can be prevented by the improved stability; thus, a transparent electrode comprising the doped graphene including a hydrophobic organic layer can be useful in a solar cell and a display device.
摘要翻译：通过在其上掺杂有掺杂剂的掺杂石墨烯的表面上形成疏水性有机层来改善掺杂石墨烯中的水分和温度稳定性。通过提高稳定性可以防止掺杂石墨烯的降解; 因此，包括疏水性有机层的掺杂石墨烯的透明电极可用于太阳能电池和显示装置。

2. 发明公开

KR1020130019700A 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 审中-实审
标题翻译：晶体管，其制造方法和包含晶体管的电子器件
公开(公告)号：KR1020130019700A
公开(公告)日：2013-02-27
申请号：KR1020110081814
申请日：2011-08-17
申请人： 삼성전자주식회사 , 삼성디스플레이 주식회사
发明人： 김현석 , 이상윤 , 류명관 , 김태상 , 선종백 , 손경석 , 최원묵 , 박준석 , 송미정
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78633 , H01L29/78669 , H01L29/78678 , H01L29/7869 , G02F1/136209 , H01L27/3272
摘要： PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to improve light reliability. CONSTITUTION: A channel layer(C1) is separated from a gate. A source and a drain are contacted to a first region and a second region of the channel layer, respectively. A light blocking layer(LB1) is located between the gate and one of the channel layer, the source, and the drain, and includes carbon based materials.
摘要翻译：目的：提供晶体管及其制造方法以及包括该晶体管的制造方法，以提高光的可靠性。构成：通道层（C1）与栅极分离。源极和漏极分别与沟道层的第一区域和第二区域接触。遮光层（LB1）位于栅极和沟道层，源极和漏极之一之间，并且包括碳基材料。

3. 发明公开

KR1020120122675A 금속성 및 반도체성 탄소나노튜브의 분리방법, 및 금속성 및 반도체성 탄소나노튜브 분리용 테이프 审中-实审
标题翻译：用于分离金属和半导体碳纳米管的方法以及金属和半导体碳纳米管的分离带
公开(公告)号：KR1020120122675A
公开(公告)日：2012-11-07
申请号：KR1020110040975
申请日：2011-04-29
申请人： 삼성전자주식회사
发明人： 우윤성 , 최원묵 , 홍궈 , 최재영 , 장진
IPC分类号： C01B31/02 , C09J7/02 , B82B3/00 , B82Y30/00
CPC分类号： C01B32/168 , B82B3/00 , B82Y30/00 , C09J7/20
摘要： PURPOSE: A separating method of metallic and semiconductive carbon nanotubes and a tape for separating the metallic semiconductive carbon nanotubes are provided to separate metallic semiconductive carbon nanotubes from a wide carbon nanotube array. CONSTITUTION: A separating method of metallic and semiconductive carbon nanotubes includes the following steps: a compound with the selective absorbent with respect to either metallic carbon nanotube or semiconductive carbon nanotube is combined with at least one side of a flexible thin film; the flexible thin film is applied to a substrate on which a carbon nanotube array is formed, and the metallic carbon nanotube and the semiconductive carbon nanotube are alternately arrayed; the compound combined side of the flexile thin film is contacted with the carbon nanotube array; and the flexible thin film is separated from the substrate. The compound includes either an amine group or a phenyl group. The flexible thin film includes at least one selected from alkyl-based polymer, acryl-based polymer, styrene-based polymer, natural rubber, synthetic rubber, silicon rubber, fluorosilicon, and silicon-based resin. [Reference numerals] (AA) Semiconductive-SWNT; (BB) A type tape; (CC) Metallic-SWNT
摘要翻译：目的：提供金属和半导体碳纳米管的分离方法和用于分离金属半导体碳纳米管的带，以从宽碳纳米管阵列分离金属半导体碳纳米管。构成：金属和半导体碳纳米管的分离方法包括以下步骤：将与金属碳纳米管或半导体碳纳米管相关的选择性吸收剂的化合物与柔性薄膜的至少一面结合; 将柔性薄膜施加到其上形成有碳纳米管阵列的基板上，并且金属碳纳米管和半导体碳纳米管交替排列; 柔性薄膜的复合组合侧与碳纳米管阵列接触; 并且柔性薄膜与基板分离。该化合物包括胺基或苯基。柔性薄膜包括选自烷基系聚合物，丙烯酸系聚合物，苯乙烯系聚合物，天然橡胶，合成橡胶，硅橡胶，氟硅，硅系树脂中的至少一种。（附图标记）（AA）半导体SWNT; （BB）A型胶带; （CC）金属 - SWNT

4. 发明公开

KR1020120114901A 반도체소자 및 그 제조방법 审中-实审
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020120114901A
公开(公告)日：2012-10-17
申请号：KR1020110032729
申请日：2011-04-08
申请人： 삼성전자주식회사
发明人： 이지열 , 김억수 , 최원묵 , 김선국
IPC分类号： H01L29/786
CPC分类号： H01L51/0562 , H01L51/0036 , H01L51/0545 , H01L51/0541
摘要： PURPOSE: A semiconductor device and a manufacturing method thereof are provided to have excellent performance characteristics by applying an electric component to various sensors or switching elements. CONSTITUTION: A second electrode is separated from a first electrode. An active layer is placed between the first electrode and the second electrode. The active layer comprises a first layer(10a) and a second layer(20a). The first layer contacts the first electrode to the second electrode. The second layer is separated from at least one of the first electrode to the second electrode. The first layer comprises an organic semiconductor. The second layer comprises material in which conductivity and charge mobility are higher than the first layer.
摘要翻译：目的：通过向各种传感器或开关元件施加电气元件，提供半导体器件及其制造方法以具有优异的性能特性。构成：第二电极与第一电极分离。有源层被放置在第一电极和第二电极之间。有源层包括第一层（10a）和第二层（20a）。第一层将第一电极接触到第二电极。第二层与第一电极至第二电极中的至少一个分离。第一层包括有机半导体。第二层包括导电性和电荷迁移率高于第一层的材料。

5. 发明公开

KR1020110061245A 그라펜을 이용한 유기발광소자 无效
标题翻译：使用石墨的有机发光装置
公开(公告)号：KR1020110061245A
公开(公告)日：2011-06-09
申请号：KR1020090117838
申请日：2009-12-01
申请人： 삼성전자주식회사
发明人： 최재영 , 최원묵
IPC分类号： H01L51/54 , H05B33/26
CPC分类号： H01L51/5206
摘要： PURPOSE: An organic light emitting device using a graphen is provided to improve light efficiency by suppressing the light leakage of a first electrode between an organic light emitting layer and a substrate. CONSTITUTION: A first electrode(30) is formed on a transparent substrate(10). The first electrode is made of graphene with flexibility. An organic layer(50) with a light emitting layer is formed on the first electrode. The organic layer is made or low molecular organism or high molecular organism. A second electrode(70) is formed on the organic layer.
摘要翻译：目的：提供使用石墨烯的有机发光装置，通过抑制有机发光层与基板之间的第一电极的漏光来提高光的效率。构成：在透明基板（10）上形成第一电极（30）。第一电极由具有柔性的石墨烯制成。在第一电极上形成具有发光层的有机层（50）。生成有机层或低分子生物或高分子生物。第二电极（70）形成在有机层上。

6. 发明授权

KR101878742B1 그래핀층 상에 ＧａＮ 층을 성장시키는 방법 및 상기 그래핀층 상의 ＧａＮ을 이용한 발광소자 有权
公开(公告)号：KR101878742B1
公开(公告)日：2018-08-20
申请号：KR1020110143912
申请日：2011-12-27
申请人： 삼성전자주식회사 , 전북대학교산학협력단
发明人： 최원묵 , 우윤성 , 최재영 , 이인환 , 전대우
IPC分类号： H01L33/00 , H01L33/12 , H01L33/32
摘要： 그래핀층의손상을최소화하면서그래핀층상에고품질의 GaN 결정층을성장시키는방법이개시된다. 개시된일 실시예에따르면, 기판상에그래핀층을형성하는단계, 그래핀층상에 Ga을미리흘려 Ga 시드를형성하는단계, 질화수소화합물을제공하여 Ga 시드상에 GaN 버퍼층을성장시키는단계, 및 GaN 버퍼층상에 GaN 결정층을성장시키는단계를포함할수 있다. 여기서, Ga 시드를형성하는단계는약 300도내지 600도의비교적저온에서수행되며, 질화수소화합물을제공하는동시에공정온도를약 1000도내지 1100도로상승시킬수 있다. 약 300도내지 600도의저온공정으로 Ga 시드가먼저형성되기때문에, 이후의 GaN 버퍼층형성단계에서그래핀층은열에의한손상을거의입지않는다.

7. 发明授权

KR101878736B1 그래핀 제조방법 有权
公开(公告)号：KR101878736B1
公开(公告)日：2018-07-17
申请号：KR1020110061795
申请日：2011-06-24
申请人： 삼성전자주식회사
发明人： 우윤성 , 최재영 , 진쟝 , 구오홍 , 최원묵
IPC分类号： C01B31/02 , C30B29/02 , C30B17/00 , H01B1/04
摘要： 그래핀의제조방법및 상기제조방법에의해얻어진그래핀이제공되며, 상기제조방법에의하면결함이적은단결정그래핀을대면적으로성장시킬수 있어투명전극, 트랜지스터등 다양한전기소자분야에유용하게응용될수 있다.

8. 发明授权

KR101813172B1 그래핀 다중층의 제조방법 有权
标题翻译：石墨烯多层膜的制造方法
公开(公告)号：KR101813172B1
公开(公告)日：2017-12-29
申请号：KR1020110037983
申请日：2011-04-22
申请人： 삼성전자주식회사
发明人： 우윤성 , 최재영 , 최원묵 , 신현진 , 윤선미
IPC分类号： C01B31/02 , C23C16/26 , B32B18/00 , H01B1/04
CPC分类号： B32B37/02 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/02 , C01B2204/04 , H01L21/0272
摘要： 그래핀다중층의제조방법이제공되며, 상기그래핀다중층은보다간단하고경제적인방법으로제조할수 있으며, 패턴화된그래핀다중층을제조하거나, 이를원하는기판상에용이하게전사하는것이가능하다.
摘要翻译：是大量繁殖提供了一种制造的中间体的方法，所述中间体是肯定的大量繁殖，能够更简单地，可以以经济的方式来制备，图案化的是方坯产生的，或很容易地将其转移到期望的基底到中间。

9. 发明授权

KR101681950B1 그라펜 에지의 화학적 변형 방법 및 이에 의하여 얻어진 그라펜 有权
标题翻译：用于改善由此获得的石墨烯边缘和石墨烯的方法
公开(公告)号：KR101681950B1
公开(公告)日：2016-12-05
申请号：KR1020090003302
申请日：2009-01-15
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 최원묵 , 홍병희 , 최재영
IPC分类号： C01B31/04 , B01J19/00
CPC分类号： C01B32/194 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/23 , C01B2204/04 , C01B2204/32 , C07C31/125 , C07C31/20 , C07C47/02 , C07C49/12 , C07C53/128 , C07C69/22 , Y10T428/24479 , Y10T428/24802 , Y10T428/30
摘要： 그라펜에지를드라이에칭한후 에칭된부분에물 또는알코올과같이수산화이온을제공할수 있는용액을접촉하여처리하면해당에지부분에작용기를도입할수 있다. 그라펜에지에작용기를도입함으로써그라펜의전기적성질을변화시킬수 있다. 전기적성질이변화된그라펜은센서나전계효과트랜지스터등 다양한소자에응용될수 있다.
摘要翻译：用于石墨烯的化学改性的方法包括干蚀刻石墨烯以提供蚀刻的石墨烯; 并在蚀刻的石墨烯的边缘处引入官能团。还公开了石墨烯，包括蚀刻的边缘部分，蚀刻部分包括官能团。

10. 发明公开

KR1020120119789A 그래핀 다중층의 제조방법 审中-实审
标题翻译：制备多层石墨的方法
公开(公告)号：KR1020120119789A
公开(公告)日：2012-10-31
申请号：KR1020110037983
申请日：2011-04-22
申请人： 삼성전자주식회사
发明人： 우윤성 , 최재영 , 최원묵 , 신현진 , 윤선미
IPC分类号： C01B31/02 , C23C16/26 , B32B18/00 , H01B1/04
CPC分类号： B32B37/02 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/02 , C01B2204/04 , H01L21/0272
摘要： PURPOSE: A manufacturing method of multiple graphene layers is provided to efficiently generate graphene of high density and to reduce defects in the graphene by directly forming the graphene on a substrate. CONSTITUTION: A manufacturing method of multiple graphene layers includes the following: a graphite-metal catalyst layer(14) is formed on a substrate(11); graphene(13) is formed on the graphite-metal catalyst layer; the graphite-metal catalyst layer forming process and the graphene forming process are repeated to form a stacked body of the graphite-metal catalyst layer and the graphene; and the graphite metal catalyst layer is removed from the stacked body.
摘要翻译：目的：提供多个石墨烯层的制造方法，以有效地产生高密度的石墨烯，并通过在基板上直接形成石墨烯来减少石墨烯中的缺陷。构成：多个石墨烯层的制造方法包括以下：在基板（11）上形成石墨 - 金属催化剂层（14）; 石墨烯（13）形成在石墨 - 金属催化剂层上; 重复石墨 - 金属催化剂层形成工艺和石墨烯形成工艺以形成石墨 - 金属催化剂层和石墨烯的层叠体; 并且从堆叠体去除石墨金属催化剂层。

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