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3. 发明授权

KR1019900000350B1 광전 변환 장치 失效
标题翻译：光电转换装置
公开(公告)号：KR1019900000350B1
公开(公告)日：1990-01-25
申请号：KR1019870000764
申请日：1987-01-31
申请人： 삼성에스디아이 주식회사
发明人： 최규만 , 김대규 , 권기덕 , 김강원 , 송호근 , 전인상
IPC分类号： H01L27/14 , H01J29/45
摘要： The converter includes a nitrogenous silicn layer (3) of 100-1000A in thickness formed on a transparant layer (1) having a conduction layer (2), a hydrated non-crystallic silicon layer (4) doped with boron of 2-10 SCCM for photoelectric conversion, and a sulfurated antimon layer comprising a fine layer (5) formed in the Argon circumstances of 1x10-4- 1x10-3 Torr and a porous layer (6).
摘要翻译：转换器包括形成在具有导电层（2）的透明层（1）上的厚度为100-1000A的含氮硅层（3），掺杂有2-10SCCM的硼的水合非晶硅层（4）以及包含在1×10 -4 -1×10 -3 Torr的氩气环境中形成的微细层（5）的硫化锑层和多孔层（6）。

7. 发明授权

KR1019900001406B1 고체 촬상소자의 제조방법 失效
标题翻译：制造固态图像传感器的方法
公开(公告)号：KR1019900001406B1
公开(公告)日：1990-03-09
申请号：KR1019870010954
申请日：1987-09-30
申请人： 삼성에스디아이 주식회사
发明人： 전인상
IPC分类号： H01L31/14
摘要： The solid state image pick-up device with a homogeneous colour filter is made by photolithographying the scribe line (3) after forming an organic colour filter, an intermediate layer (4), and a protective layer (5) in the state before lithographying the scribe line. The protective layer plays a role as mask in photo lithograpy of the scribe line.
摘要翻译：具有均匀滤色片的固体摄像装置通过在形成有机彩色滤光片，中间层（4）和保护层（5）之后，在刻线之前的状态下光刻刻划线（3）划线保护层在划线的照片光刻中起着掩模的作用。

9. 发明授权

KR1019910005407B1 매몰형 전하 결합소자 失效
标题翻译： BELLIED层式电荷耦合器件
公开(公告)号：KR1019910005407B1
公开(公告)日：1991-07-29
申请号：KR1019880014033
申请日：1988-10-27
申请人： 삼성에스디아이 주식회사
发明人： 전인상 , 박오연
IPC分类号： H01L31/00
摘要： A buried type CCD for enlarging the difference between the maximum channel potential and the channel surface potential comprises an N type Si substrate (6), a P-well (5) formed on the substrate (6), a buried channed (4) formed by diffusing N type impurities an N type buried channel (3) and a gate oxide film (2). The impurity concentration of the channel (3) is lower than the impurity concentration of the buried channel (4).
摘要翻译：用于扩大最大沟道电位和沟道表面电位差的掩埋型CCD包括形成在衬底（6）上的N型Si衬底（6），P阱（5），形成的掩埋沟道（4）通过N型杂质扩散N型掩埋沟道（3）和栅氧化膜（2）。通道（3）的杂质浓度低于掩埋通道（4）的杂质浓度。

10. 发明授权

KR1019910005394B1 CCD형 고체촬영소자 失效
标题翻译： CCD固态图像传感器器件
公开(公告)号：KR1019910005394B1
公开(公告)日：1991-07-29
申请号：KR1019880010425
申请日：1988-08-17
申请人： 삼성에스디아이 주식회사
发明人： 전인상 , 김범식
IPC分类号： H01L31/14
摘要： Solid state image deive with polycrystalline silicon electrodes of double layer includes the first horizontal transport CCD (5) and the second horizontal transport CCD (6) at the top and bottom of photo accepting part. The signal charge of vertical transport channel (8) situated at a row of an odd number is transported upward (10) or downward (10), while the signal charge of even number is transported in the other direction. The first and second polycrystalline silicon (2,3) as the vertical transport electrodes is arranged alternately at the same column.
摘要翻译：具有双层多晶硅电极的固态图像具有第一水平传输CCD（5）和第二水平传输CCD（6），位于光接收部分的顶部和底部。位于奇数行的垂直传输通道（8）的信号电荷向上（10）或向下（10）传输，而偶数的信号电荷在另一个方向上传输。作为垂直输送电极的第一和第二多晶硅（2,3）交替地配置在同一列。

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