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1. 发明公开

KR1020140001783A ＬＥＤ의 제조 방법 审中-实审
标题翻译：制造LED的方法
公开(公告)号：KR1020140001783A
公开(公告)日：2014-01-07
申请号：KR1020130074524
申请日：2013-06-27
申请人： 닛토덴코 가부시키가이샤
发明人： 다카하시도모카즈 , 아키즈키신야 , 스기무라도시마사 , 마츠무라다케시 , 우엔다다이스케
IPC分类号： H01L33/48 , H01L33/44
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L2221/68327 , H01L2221/68336
摘要： A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including a light emitting element and the substrate; and attaching a protective sheet to the LED wafer prior to the back-grinding or prior after grinding the substrate in the back-grinding.
摘要翻译：根据本发明的实施例的制造LED的方法包括：背面研磨包括发光元件和基板的LED晶片的基板; 并且在后研磨之前或之前在后磨中研磨基底之后将保护片附接到LED晶片。

2. 发明授权

KR101016081B1 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법 失效
标题翻译：用于制造片材的粘合片和方法，使用该片材的方法以及在粘合片材中使用的多层片材及其制备方法
公开(公告)号：KR101016081B1
公开(公告)日：2011-02-17
申请号：KR1020030050470
申请日：2003-07-23
申请人： 닛토덴코 가부시키가이샤
发明人： 요시다요시노리 , 마에노요헤이 , 아카자와고우지 , 마츠무라다케시 , 다카하시도모카즈
IPC分类号： C09J7/00
CPC分类号： H01L21/6835 , B32B27/08 , C09J7/29 , C09J2201/162 , C09J2433/006 , C09J2475/006 , H01L21/6836 , H01L2221/68327 , H01L2221/6839 , Y10T428/28 , Y10T428/2848
摘要： 본 발명은 반도체 웨이퍼 등의 제품을 가공할 때에 사용되는 점착 시트에 관한 것으로, 가공 중에 반도체 웨이퍼 등이 파손되는 매수가 적고, 또한 점착 시트의 잔류 응력에 의한 제품의 뒤틀림을 작게 할 수 있는 점착 시트를 제공하기 위해, 점착 시트는 우레탄 중합체와 비닐계 중합체를 유효 성분으로서 함유하는 수지 조성물로 형성된 복합 필름, 상기 복합 필름과는 다른 재료로 이루어진 제 1 필름 및 점착제층을 갖고, 폭 20mm의 가늘고 긴 시트를 곡률 반경 3.0mm로 구부렸을 때의 탄성률이 9N/mm
2 이상 250N/mm
2 이하인 점착 시트이다.

3. 发明公开

KR1020140059732A 웨이퍼의 가공 방법 및 상기 웨이퍼의 가공 방법에 의해 얻어진 웨이퍼 审中-实审
标题翻译：通过波浪加工方法获得的波浪加工方法和波形
公开(公告)号：KR1020140059732A
公开(公告)日：2014-05-16
申请号：KR1020130133533
申请日：2013-11-05
申请人： 닛토덴코 가부시키가이샤
发明人： 스기무라도시마사 , 다나카순페이 , 다카하시도모카즈 , 아키즈키신야
IPC分类号： H01L21/78 , H01L21/302 , H01L21/48
摘要： The present invention relates to a wafer processing method which includes a solvent cleaning process before a temporary suitable processing step is carried out, and provides a wafer processing method which appropriately maintains and supports a wafer in a processing step and prevents adhesive residue after the delamination of an adhesive sheet. A wafer processing method according to the present invention includes a process of attaching a wafer to an adhesive sheet for a wafer process, comprising a base material and an adhesive layer including a radiation hardening adhesive; a process of emitting radioactive ray to the adhesive layer of the adhesive sheet for a wafer process; a process of cleaning the wafer with a solvent; and a process of processing the wafer. In the wafer processing method according to the present invention, a radiation irradiation process is carried out before the cleaning process.
摘要翻译：本发明涉及一种晶片处理方法，其包括在进行临时合适的处理步骤之前的溶剂清洗工艺，并提供在处理步骤中适当地维持和支撑晶片的晶片处理方法，并防止在分层之后的粘合剂残留粘合片。根据本发明的晶片处理方法包括将晶片附着到用于晶片工艺的粘合片上的方法，包括基底材料和包括辐射硬化粘合剂的粘合剂层; 向用于晶片工艺的粘合片的粘合剂层发射放射线的过程; 用溶剂清洗晶片的工艺; 以及处理晶片的过程。在根据本发明的晶片处理方法中，在清洁处理之前进行放射线照射处理。

4. 发明公开

KR1020140001782A ＬＥＤ의 제조 방법 审中-实审
标题翻译：制造LED的方法
公开(公告)号：KR1020140001782A
公开(公告)日：2014-01-07
申请号：KR1020130074523
申请日：2013-06-27
申请人： 닛토덴코 가부시키가이샤
发明人： 다카하시도모카즈 , 아키즈키신야 , 스기무라도시마사 , 마츠무라다케시 , 우엔다다이스케
IPC分类号： H01L33/46 , H01L33/48
CPC分类号： H01L33/46 , H01L21/6836 , H01L33/0079 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386
摘要： A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including a substrate and a light emitting element formed on one side of the substrate; forming a reflective layer on an outer substrate after the back-grinding; and attaching a heat resisting adhesive sheet to an outer light emitting element of the LED wafer.
摘要翻译：根据本发明的实施例的制造LED的方法包括：背面研磨包括基板和形成在基板的一侧上的发光元件的LED晶片的基板; 在后研磨之后在外基板上形成反射层; 并将耐热粘合片附着到LED晶片的外部发光元件上。

5. 发明公开

KR1020040030240A 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법 失效
标题翻译：粘合片及其制造方法，以及用于粘合片的多层片材及其制造方法，以减少在抛光过程中的损害，并且在不引起环境问题的情况下弯曲和失真
公开(公告)号：KR1020040030240A
公开(公告)日：2004-04-09
申请号：KR1020030050470
申请日：2003-07-23
申请人： 닛토덴코 가부시키가이샤
发明人： 요시다요시노리 , 마에노요헤이 , 아카자와고우지 , 마츠무라다케시 , 다카하시도모카즈
IPC分类号： C09J7/00
CPC分类号： H01L21/6835 , B32B27/08 , C09J7/29 , C09J2201/162 , C09J2433/006 , C09J2475/006 , H01L21/6836 , H01L2221/68327 , H01L2221/6839 , Y10T428/28 , Y10T428/2848
摘要： PURPOSE: An adhesive sheet and method for producing and use thereof, and a multilayered sheet used to the adhesive sheet and preparation method thereof are provided to improve the storage modulus and flexural modulus, thereby when used to a semiconductor wafer manufacturing process, reducing the number of damaged wafer during a polishing process, bending and distortion of wafer, without using environmentally hazardous chemicals. CONSTITUTION: The adhesive sheet comprises: a complex film(2) formed by a composition comprising an urethane polymer and a vinyl polymer as active ingredients; a first film(1) comprised of a material different from the complex film; and an adhesive layer. The adhesive sheet has 9-250N/mm2 of elastic modulus when the long strip of the sheet with the width of 20mm is bent to 3.0mm of radius of curvature. The sheet is produced by: forming an urethane polymer by reacting polyol and polyisocyanate in the presence of radical polymerizable monomers; coating the mixture of the urethane polymer and radical polymerizable monomers, onto the first film; and curing them with irradiation. The multilayered sheet used to the adhesive sheet as a support comprises a complex film having storage modulus of less than 2.0x(10)¬8Pa at 25deg.C and more than 3.0x(10)¬5Pa at 100deg.C.
摘要翻译：目的：提供一种粘合片及其制造方法以及用于粘合片的多层片材及其制备方法，以提高储存模量和弯曲弹性模量，从而当用于半导体晶片制造工艺时，减少数量在抛光过程中损坏的晶片，晶片的弯曲和变形，而不使用对环境有害的化学品。构成：粘合片包括：由包含氨基甲酸酯聚合物和乙烯基聚合物作为活性成分的组合物形成的复合膜（2）由与复合膜不同的材料构成的第一膜（1）和粘合剂层。当宽度为20mm的片材的长条弯曲到曲率半径为3.0mm时，粘合片具有9-250N / mm 2的弹性模量。该片材通过以下方法制备：在可自由基聚合的单体存在下，使多元醇和多异氰酸酯反应形成聚氨酯聚合物; 将聚氨酯聚合物和可自由基聚合的单体的混合物涂覆到第一膜上; 并用照射固化。用作粘合片作为载体的多层片材包含在25℃时储能模量小于2.0×（10）-8Pa的复合膜，在100℃下的复合膜大于3.0×（10）·5Pa。

6. 发明公开

KR1020040018958A 콜릿, 및 칩 부품을 흡착하여 픽업하는 방법 无效
标题翻译：使用该芯片的芯片和方法
公开(公告)号：KR1020040018958A
公开(公告)日：2004-03-04
申请号：KR1020030058754
申请日：2003-08-25
申请人： 닛토덴코 가부시키가이샤
发明人： 야마모토쇼지 , 다카하시도모카즈
IPC分类号： H01L21/50
CPC分类号： H01L24/75
摘要： PURPOSE: To provide a collet formed with a recess 10 brought into contact with one plate surface of a chip part and sucks the chip by evacuating the recess 10 in a contact state and picks up it, and can pick up even a chip part that is too thin to cause deformation during picking up without a strong suction force causing breakage, and to provide a method for picking up the chip part using the same. CONSTITUTION: The method is used to pick up a chip part. The collet is provided with a projection 12 which projects from the inner side surface 101 and/or the inner bottom surface 102 of a recess 10 and is brought into contact with the plate surface of the chip part in contact with the recess 10. Furthermore, the method includes a step where the collect is brought into contact with the chip so that a distance between at least one outer circumference edge of the chip to be picked up and the opening edge of the recess 10 is 0.001-0.3mm.
摘要翻译：目的：提供一种夹头，其形成有与芯片部分的一个板表面接触的凹部10，并且在接触状态下抽空凹部10并吸收芯片，并且可以拾取甚至芯片部分，太薄而不会引起变形，而没有强力的吸力造成断裂，并提供使用该芯片拾取芯片部件的方法。构成：该方法用于拾取芯片部分。夹头具有从凹部10的内侧面101和/或内侧底面102突出并与与凹部10接触的芯片部的板面接触的突起部12.此外，该方法包括使集合体与芯片接触的步骤，使得要拾取的芯片的至少一个外周边缘与凹部10的开口边缘之间的距离为0.001-0.3mm。

7. 发明公开

KR1020160070017A 반도체의 제조에 사용되는 감압성 점착 시트 审中-实审
标题翻译：用于生产半导体的压敏粘合片
公开(公告)号：KR1020160070017A
公开(公告)日：2016-06-17
申请号：KR1020150173811
申请日：2015-12-08
申请人： 닛토덴코 가부시키가이샤
发明人： 다나카슌페이 , 다카하시도모카즈 , 아키야마준
IPC分类号： C09J7/02 , C09J11/06 , H01L21/683
CPC分类号： C09J7/0246 , C09J7/22 , C09J7/38 , C09J2201/622 , C09J2203/326 , C09J2433/00 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386
摘要： 예를들어지지재를박리하는단계를포함하는반도체제조방법에서도원하는감압성점착특성을유지할수 있는감압성점착시트가제공된다. 감압성점착시트는기재층및 감압성점착제층을포함하며, 상기감압성점착제층은수접촉각이 80° 내지 105°이다. 감압성점착시트는 20℃에서의수용해도가 1 g/100 mL 이하인용제와감압성점착제층을접촉시키는단계를포함하는반도체의제조방법에사용된다.
摘要翻译：在一个实施方案中提供了一种压敏粘合片，其可以通过包括使支撑材料分层的步骤的半导体制造方法保持所需的压敏粘合剂性能。压敏粘合片包括基材层和压敏粘合剂层，其中粘合剂层的水接触角在80-105°的范围内。该粘合片用于半导体的制造方法，其特征在于，包括使粘合剂层与20质量％以下的水溶性小于等于1g / 100mL的溶剂接触的工序 C。

8. 发明公开

KR1020140051078A 반도체 소자의 제조 방법 审中-实审
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020140051078A
公开(公告)日：2014-04-30
申请号：KR1020130123916
申请日：2013-10-17
申请人： 닛토덴코 가부시키가이샤
发明人： 아키즈키신야 , 후쿠하라준지 , 스기무라도시마사 , 다카하시도모카즈 , 미즈노고지
IPC分类号： H01L21/78 , H01L21/60
CPC分类号： H01L24/94 , H01L2924/15788 , H01L2924/00
摘要： The present invention provides a method for manufacturing a semiconductor device having a via conductive path with great production efficiency. The manufacturing method of the present invention comprises the following processes of: [Process A] preparing a semiconductor wafer which has an active surface on which a plurality of semiconductors are formed, a conductive layer which is formed on the opposite surface of the active surface and has a given pattern, and a via conductive path which connects the active surface with the opposite surface; [Process B] forming a solder bump on the conductive layer; and [Process C] dicing the semiconductor wafer, wherein [Process A] includes that of the opposite surface of the active surface is grounded while a protective tape is attached to the active surface which is on a semiconductor wafer and on which a plurality of semiconductor devices are formed, and processes from the grinding to the dicing in [Process C] performed while the protective tape is attached.
摘要翻译：本发明提供一种制造具有生产效率高的通孔导电路径的半导体器件的方法。本发明的制造方法包括以下工序：[制备方法A]制备其上形成有多个半导体的有源表面的半导体晶片，形成在有源表面的相对表面上的导电层和具有给定的图案，以及将活性表面与相对表面连接的通孔导电路径; [工艺B]在导电层上形成焊料凸块; 和[工艺C]切割半导体晶片，其中[工艺A]包括有源表面的相对表面的接地接地，同时将保护带附接到半导体晶片上的有源表面上，并且在其上具有多个半导体形成装置，并且在安装保护带的同时在[方法C]中从研磨到切割的处理。

9. 发明公开

KR1020140001781A ＬＥＤ의 제조 방법 审中-实审
标题翻译：制造LED的方法
公开(公告)号：KR1020140001781A
公开(公告)日：2014-01-07
申请号：KR1020130074521
申请日：2013-06-27
申请人： 닛토덴코 가부시키가이샤
发明人： 다카하시도모카즈 , 아키즈키신야 , 스기무라도시마사 , 마츠무라다케시 , 우엔다다이스케
IPC分类号： H01L33/46 , H01L33/48
CPC分类号： H01L33/46 , H01L21/6836 , H01L33/0079 , H01L2221/68336 , H01L2221/6834 , H01L2221/68381 , H01L2933/0025
摘要： A method of manufacturing an LED according to an embodiment of the present invention includes: forming a reflective layer on an outer side of a substrate of an LED wafer including the substrate and a light emitting element on one surface of the substrate; and attaching, prior to the forming the reflective layer, a heat-resistant pressure-sensitive adhesive sheet onto an outer side of the light emitting element.
摘要翻译：根据本发明的实施例的制造LED的方法包括：在基板的一个表面上的包括基板和发光元件的LED晶片的基板的外侧上形成反射层; 以及在形成所述反射层之前将耐热粘合片附接到所述发光元件的外侧。

10. 发明公开

KR1020120029363A 점착 테이프 无效
标题翻译：压敏胶带
公开(公告)号：KR1020120029363A
公开(公告)日：2012-03-26
申请号：KR1020110093445
申请日：2011-09-16
申请人： 닛토덴코 가부시키가이샤
发明人： 이키시마신스케 , 하부다카시 , 아사이후미테루 , 오오야마고오키 , 도리이다다오 , 가메이가츠토시 , 가토유키 , 다카하시도모카즈
IPC分类号： C09J7/02 , H01L21/67
CPC分类号： H01L21/67132 , B32B27/306 , B32B27/327 , B32B2250/24 , B32B2250/246 , B32B2405/00 , B32B2457/14 , C09J7/29 , C09J2201/162 , C09J2201/622 , C09J2203/326 , C09J2423/106 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , Y10T428/2848 , C09J7/22 , C09J2201/16 , C09J2205/10
摘要： PURPOSE: An adhesive tape is provided to have excellent thermal resistance by including a thermal resistance layer containing a specific polypropylene based resin, and to be manufactured through low number of processes without using organic solvent. CONSTITUTION: An adhesive tape(100) comprises a heat-resistant layer(10), a base material layer(20), and an adhesive layer(30) in order. The adhesive tape has modulus of elasticity(Young's modulus) of 150mPa or less at 25 °C. The heat-resistant layer comprises polypropylene based resin copolymerized by using a metallocene catalyst. The melting point of the polypropylene based resin is 110-200 °C, the distribution of molecular weight(Mw/Mn) is 3 or less. The adhesive tape additionally comprises a second heat-resistant layer between the base material layer and the adhesive layer. The heat-resistant layer does not contains F^-, Cl^-, Br^-, NO2^-, NO3^-, SO4^2-, Li^+, Na^+, K^+, Mg^2+, Ca^2+ and NH4^+ materially.
摘要翻译：目的：通过包含含有特定的聚丙烯类树脂的耐热层，提供耐热性优异的胶带，并且在不使用有机溶剂的情况下通过低数量的方法制造。构成：粘合带（100）依次包括耐热层（10），基材层（20）和粘合剂层（30）。粘合带在25℃下的弹性模量（杨氏模量）为150mPa以下。耐热层包括通过使用茂金属催化剂共聚的聚丙烯基树脂。聚丙烯类树脂的熔点为110〜200℃，分子量（Mw / Mn）的分布为3以下。粘合带另外包括在基材层和粘合剂层之间的第二耐热层。耐热层不含有F 1 - ，Cl - ，Br - ，NO 2 - ，NO 3 - ，SO 4 2-，Li 2+，Na 2+，K 2+，Mg 2+， Ca ^ 2 +和NH4 ^ +。

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