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1. 发明公开

KR1020040053747A 강유전성 단결정 막 구조물 제조 방법 有权
标题翻译：微电解单晶膜结构的制备方法
公开(公告)号：KR1020040053747A
公开(公告)日：2004-06-24
申请号：KR1020030051431
申请日：2003-07-25
申请人： (주)아이블포토닉스
发明人： 은재환 , 이상구 , 최병주 , 임성민
IPC分类号： H01L41/187
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： PURPOSE: A preparation method of a ferroelectric single crystal membrane structure is provided to enhance a performance of an element or member containing a ferroelectric thin film or thick film. CONSTITUTION: The preparation method of a ferroelectric single crystal membrane structure comprises forming a conductive metal layer and a substrate layer(4) on one side of the ferroelectric single crystal thin plate, in order by a vacuum evaporation. The preparation method also comprises grinding the single crystal thin plate after forming the substrate layer. The preparation method also comprises forming a layer of a material selected from SiO2, MgO, Al2O3 and ZnO before forming the substrate layer.
摘要翻译：目的：提供铁电单晶膜结构的制备方法，以增强含有铁电薄膜或厚膜的元件或构件的性能。构成：铁电单晶膜结构的制备方法包括：通过真空蒸镀，依次在铁电单晶薄板的一面上形成导电金属层和基板层（4）。该制备方法还包括在形成基底层之后研磨单晶薄板。制备方法还包括在形成基底层之前形成选自SiO 2，MgO，Al 2 O 3和ZnO的材料层。

2. 发明公开

KR1020040053744A 강유전성 단결정 막 구조물 제조 방법 有权
标题翻译：微电解单晶膜结构的制备方法
公开(公告)号：KR1020040053744A
公开(公告)日：2004-06-24
申请号：KR1020030047233
申请日：2003-07-11
申请人： (주)아이블포토닉스
发明人： 은재환 , 이상구 , 최병주 , 임성민
IPC分类号： H01L41/187
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： PURPOSE: A preparation method of a ferroelectric membrane structure using a single crystal having the excellent ferroelectric, electric and optical properties is provided to overcome a performance limit in a conventional part or member comprising a ferroelectric thin film or thick film. CONSTITUTION: The preparation method of a ferroelectric single crystal membrane structure comprises bonding the ferroelectric single crystal thin plate to a substrate(4) using a conductive adhesive or a metal layer as a medium. The preparation method also comprises grinding the ferroelectric single crystal thin plate in a thickness ranging from 1 to 100 micrometers before or after bonding the thin plate to the substrate. The bonding comprises applying the conductive adhesive between the crystal thin plate and the substrate and then heat treating the laminates at the temperature ranged from room temperature to 150 deg.C for 1 to 24 hours.
摘要翻译：目的：提供使用具有优异的铁电，电和光学特性的单晶的铁电膜结构的制备方法，以克服包含铁电薄膜或厚膜的常规部件或构件的性能极限。构成：铁电单晶膜结构体的制备方法包括使用导电性粘合剂或金属层作为介质将铁电单晶薄板接合到基板（4）上。制备方法还包括在将薄板粘合到基底之前或之后研磨厚度为1至100微米的铁电单晶薄板。接合包括将导电粘合剂施加在晶体薄板和基底之间，然后在室温至150℃的温度下热处理层压体1至24小时。

3. 发明公开

KR1020010096505A 강유전체 단결정 및 그의 제조 방법 有权
标题翻译：电磁单晶及其制造方法
公开(公告)号：KR1020010096505A
公开(公告)日：2001-11-07
申请号：KR1020000069311
申请日：2000-11-21
申请人： (주)아이블포토닉스
发明人： 이상구 , 임성민 , 김민찬
IPC分类号： C30B29/22
摘要： PURPOSE: A ferroelectric single crystal and a method for manufacturing the same are provided to manufacture an intelligent relaxor ferroelectric single crystal of a composition the characteristic value of which is suitable to manufacture of devices such as ultra high speed modulators for high-technology radio communication, ultrasonic transducer and optical communication into a commercial crystal having a diameter of 5 cm or more. CONSTITUTION: The ferroelectric single crystal has a composition represented by formula I: x£A|y£B|z£C|-p£P|n£N| where £A| is lead magnesium niobate £Pb(Mg1/3Nb2/3)O3| or lead zinc niobate £Pb(Zn1/3Nb2/3)O3|, £B| is lead titanate £PbTiO3|, £C| is lithium tantalate £LiTaO3| or lithium niobate £LiNbO3|, £P| is a metal selected from the group consisting of platinum, gold, silver, palladium and rhodium, £N| is an oxide of a metal selected from the group consisting of nickel, cobalt, iron, strontium, scandium, ruthenium, copper and cadmium, x is a number which is greater than 0.65 and less than 0.98, y is a number which is greater than 0.01 and less than 0.34, z is a number which is greater than 0.01 and less than 0.1, and each of p and n is a number which is greater than 0.01 and less than 5.
摘要翻译：目的：提供铁电单晶及其制造方法，以制造其特征值适合于制造用于高科技无线电通信的超高速调制器等装置的智能弛豫铁电单晶，超声波换能器和光通信成直径为5cm以上的商品晶体。构成：铁电单晶具有由式I表示的组成：x£A | y£B | z£C | -p£P | n£N | 其中£A | 铅铌酸铅铅（Mg1 / 3Nb2 / 3）O3 | 或铅锌铌酸铅（Zn1 / 3Nb2 / 3）O3 |，£B | 铅钛酸铅£PbTiO3 |，£C | 是钽酸锂£LiTaO3 | 或铌酸锂LiNbO3 |，£P | 是选自铂，金，银，钯和铑的金属，£N | 是选自镍，钴，铁，锶，钪，钌，铜和镉的金属的氧化物，x是大于0.65且小于0.98的数，y是大于 0.01且小于0.34，z是大于0.01且小于0.1的数，p和n各自为0.01以上且小于5的数。

4. 发明授权

KR100570586B1 강유전성 단결정 막 구조물 제조 방법 有权
标题翻译：用于制造包含电化学单晶层的薄膜结构的方法
公开(公告)号：KR100570586B1
公开(公告)日：2006-04-13
申请号：KR1020030047233
申请日：2003-07-11
申请人： (주)아이블포토닉스
发明人： 은재환 , 이상구 , 최병주 , 임성민
IPC分类号： H01L41/187
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： 본 발명은 강유전성이고 전광 특성, 압전 특성이 우수한 단결정을 사용하여 막 구조물을 제작하는 방법에 관한 것으로, 본 발명에 따라 기판 위에 연마된 단결정 박판을 접합하거나 단결정 기판을 연마하여 박막화한 후 이를 기판과 접합하는 본 발명의 단결정 막 구조물 제법은 비교적 저온에서 처리되므로 종래의 방법에서의 소결공정에 따른 다결정 막보다 전기 전자 부품 및 소자에서 우수한 특성을 나타내는 강유전체 막을 제공할 수 있다.

5. 发明授权

KR100480876B1 신규의 압전 단결정을 이용한 초음파 탐촉자 有权
标题翻译：超声波探头包含新的压电单晶
公开(公告)号：KR100480876B1
公开(公告)日：2005-04-07
申请号：KR1020010070930
申请日：2001-11-15
申请人： (주)아이블포토닉스 , 주식회사 휴먼스캔
发明人： 이상구 , 임성민 , 정호 , 김세훈
IPC分类号： G01N29/24
CPC分类号： H01L41/18 , Y10T29/42
摘要： 본 발명은 유전상수가 높고 전기기계 결합계수가 큰 값을 갖는 새로운 조성의 압전 단결정을 압전요소로 이용한 초음파 탐촉자에 관한 것으로, 본 발명에 따른 초음파 탐촉자는 초음파 송/수신 회로와의 매칭(matching)이 쉽고 우수한 감도를 가지므로 의료용 초음파 영상 진단기뿐만 아니라 군사용/산업용 초음파 변환기에 적용될 수 있다.

6. 发明授权

KR100392754B1 강유전체 단결정 및 그의 제조 방법 有权
标题翻译： 강유전체단결정및그의제조방법
公开(公告)号：KR100392754B1
公开(公告)日：2003-07-28
申请号：KR1020000069311
申请日：2000-11-21
申请人： (주)아이블포토닉스
发明人： 이상구 , 임성민 , 김민찬
IPC分类号： C30B29/22
摘要： PURPOSE: A ferroelectric single crystal and a method for manufacturing the same are provided to manufacture an intelligent relaxor ferroelectric single crystal of a composition the characteristic value of which is suitable to manufacture of devices such as ultra high speed modulators for high-technology radio communication, ultrasonic transducer and optical communication into a commercial crystal having a diameter of 5 cm or more. CONSTITUTION: The ferroelectric single crystal has a composition represented by formula I: x£A|y£B|z£C|-p£P|n£N| where £A| is lead magnesium niobate £Pb(Mg1/3Nb2/3)O3| or lead zinc niobate £Pb(Zn1/3Nb2/3)O3|, £B| is lead titanate £PbTiO3|, £C| is lithium tantalate £LiTaO3| or lithium niobate £LiNbO3|, £P| is a metal selected from the group consisting of platinum, gold, silver, palladium and rhodium, £N| is an oxide of a metal selected from the group consisting of nickel, cobalt, iron, strontium, scandium, ruthenium, copper and cadmium, x is a number which is greater than 0.65 and less than 0.98, y is a number which is greater than 0.01 and less than 0.34, z is a number which is greater than 0.01 and less than 0.1, and each of p and n is a number which is greater than 0.01 and less than 5.
摘要翻译：目的：提供一种铁电单晶体及其制造方法，用于制造具有特性值适于制造诸如用于高科技无线电通信的超高速调制器等器件的组成的智能弛豫铁电单晶，超声波换能器和光通信转换成直径为5cm或更大的商业晶体。构成：铁电单晶具有由式I表示的组成：x | A | y | B | z | C | -p | p | n | N | A | 是铅铌酸镁＆铅; Pb（Mg1 / 3Nb2 / 3）O3 | 或铅铌酸锌铅; Pb（Zn1 / 3Nb2 / 3）O3 |，B | 是钛酸铅＆英镑; PbTiO3 |，？C | 是锂钽酸锂; LiTaO3 | 或铌酸锂铌酸锂; LiNbO3 |，P | 是选自由铂，金，银，钯和铑组成的组中的金属，N 1 是选自镍，钴，铁，锶，钪，钌，铜和镉的金属的氧化物，x是大于0.65且小于0.98的数，y是大于 0.01且小于0.34，z是大于0.01且小于0.1的数，并且p和n中的每一个是大于0.01且小于5的数。

7. 发明公开

KR1020030040592A 신규의 압전 단결정을 이용한 초음파 탐촉자 有权
标题翻译：超声波探头采用新型压电单晶
公开(公告)号：KR1020030040592A
公开(公告)日：2003-05-23
申请号：KR1020010070930
申请日：2001-11-15
申请人： (주)아이블포토닉스 , 주식회사 휴먼스캔
发明人： 이상구 , 임성민 , 정호 , 김세훈
IPC分类号： G01N29/24
CPC分类号： H01L41/18 , Y10T29/42
摘要： PURPOSE: An ultrasonic probe is provided to achieve superior sensitivity and matching characteristic with respect to an ultrasonic wave transmitting/receiving circuit by fabricating the ultrasonic probe using new piezoelectric single crystalline material. CONSTITUTION: An ultrasonic probe includes a piezoelectric device(1) made of new piezoelectric single crystalline material and an ultrasonic wave transmitting/receiving device having a pair of electrodes(2a,2b), which are formed in an ultrasonic wave transmitting/receiving surface of the new piezoelectric device(1) and an opposite surface thereof. Acoustic matching layers(3a,3b) are formed on the electrode(2a) connected to the ultrasonic wave transmitting/receiving surface. A ground electrode plate(6a) and a flexible printed circuit board(6b) are connected to primary and secondary electrodes, respectively. The ground electrode plate(6a) is bonded to the primary electrode and the flexible printed circuit board(6b) is bonded to the secondary electrode by using adhesives.
摘要翻译：目的：提供一种超声波探头，通过使用新的压电单晶材料制造超声波探头，实现超声波发射/接收电路的优异灵敏度和匹配特性。构成：超声波探头包括由新的压电单晶材料制成的压电装置（1）和具有一对电极（2a，2b）的超声波发射/接收装置，它们形成在超声波发射/接收表面新的压电装置（1）及其相对表面。在连接到超声波发射/接收表面的电极（2a）上形成声匹配层（3a，3b）。接地电极板（6a）和柔性印刷电路板（6b）分别连接到初级和次级电极。接地电极板（6a）与初级电极接合，柔性印刷电路板（6b）通过使用粘接剂与二次电极接合。

8. 发明授权

KR100570585B1 강유전성 단결정 막 구조물 제조 방법 有权
标题翻译：用于制造包含电化学单晶层的结构的方法
公开(公告)号：KR100570585B1
公开(公告)日：2006-04-13
申请号：KR1020030051431
申请日：2003-07-25
申请人： (주)아이블포토닉스
发明人： 은재환 , 이상구 , 최병주 , 임성민
IPC分类号： H01L41/187
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： 본 발명은 강유전성이고 전광 특성, 압전 특성이 우수한 단결정을 사용하여 단결정 박막 및 후막을 제공하는 방법에 관한 것으로, 본 발명에 따라 단결정 박판의 일면에 하부 전극층 및 기판층들을 진공증착하여 제조된 강유전성 단결정 막 구조물은 간단한 방법으로 제조되면서도 종래의 방법에서의 소결 공정에 따른 다결정 막보다 전기 전자 부품 및 소자에서 우수한 특성을 구현할 수 있다.

9. 发明公开

KR1020040073251A 분광학적 타원해석법을 이용하여 강유전체 단결정의물리적 물성을 측정하기 위한 장치 및 방법 无效
标题翻译：使用光谱仪测定电化学单晶体的物理性能的装置和方法
公开(公告)号：KR1020040073251A
公开(公告)日：2004-08-19
申请号：KR1020030049032
申请日：2003-07-18
申请人： (주)아이블포토닉스
发明人： 은재환 , 방경윤 , 이상구 , 임성민
IPC分类号： G01N21/27
CPC分类号： G01N21/211 , G01N21/255 , G01N2021/1721 , G01N2021/213
摘要： PURPOSE: An apparatus and a method are provided to determine physical properties of a ferroelectric signal crystal, such as a dielectric constant or a phase transition temperature, by using a spectroscopic ellipsometry. CONSTITUTION: An apparatus for measuring physical properties of a ferroelectric signal crystal includes an optical device, a temperature control device, and a computer(100). The optical device has a light source(10), a polarizing light generating section(20), a ferroelectric single crystal mounting section(30), a polarizing light analyzing section(40), and a light detecting section(50). The temperature control device has a heater(31) and a heater controller(70). The apparatus is operated by means of a power supply section(80), and a driving section(60). The elements including the optical device are accommodated in a case(90).
摘要翻译：目的：提供一种用于通过使用光谱椭偏仪来确定铁电信号晶体的物理性质，例如介电常数或相变温度的装置和方法。构成：用于测量铁电信号晶体的物理特性的装置包括光学装置，温度控制装置和计算机（100）。光学装置具有光源（10），偏振光发生部（20），铁电单晶安装部（30），偏振光分析部（40）和光检测部（50）。温度控制装置具有加热器（31）和加热器控制器（70）。该装置通过电源部分（80）和驱动部分（60）操作。包括光学装置的元件容纳在壳体（90）中。

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