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    • 4. 发明公开
    • 지르코늄 산화물 박막 증착용 유기금속 선구물질 및 이의제조 방법
    • 二氧化锆薄膜沉积的前驱物及其制备方法
    • KR1020070121281A
    • 2007-12-27
    • KR1020060056116
    • 2006-06-21
    • (주)디엔에프
    • 김명운김진동박정우신재관김재완임민혁
    • C07F7/00
    • C23C16/40C07F7/00
    • A precursor of zirconium dioxide is provided to improve thermal stability and volatility of the compound, thereby depositing high quality of zirconium dioxide thin film through the metal-organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD) method. A precursor of zirconium dioxide for deposition of zirconium dioxide thin film is represented by the formula(1), wherein A is NR^2R^3 or ER^4; E is oxygen or sulfur; R^1 is hydrogen, methyl or ethyl; R^2 and R^3 are each independently C1-C4 alkyl group optionally having a fluor group or SiR^5_3; R^4 is C1-C6 alkyl group optionally having a fluor group or SiR^5_3; and R^5 is C1-C4 alkyl group. The precursor of zirconium dioxide represented by the formula(1) is prepared by reacting a zirconium compound represented by the formula(2) with alkali metal salt of amide, alkali metal salt of alkoxide or alkali metal salt of thiolate represented by the formula(3): MA, wherein M is lithium, sodium or potassium and X is chlorine, bromine or iodine atom.
    • 提供二氧化锆的前体以提高化合物的热稳定性和挥发性,从而通过金属 - 有机化学气相沉积(MOCVD)或原子层沉积(ALD)方法沉积高质量的二氧化锆薄膜。 用于沉积二氧化锆薄膜的二氧化锆的前体由式(1)表示,其中A是NR 2 R 2 3或ER 4; E是氧或硫; R 1是氢,甲基或乙基; R 2和R 3各自独立地为任选具有氟基团的C 1 -C 4烷基或SiR 5 3; R 4是任选具有氟基或C 1 -C 5烷基的C 1 -C 6烷基; R 5为C 1 -C 4烷基。 由式(1)表示的二氧化锆前体通过式(2)表示的锆化合物与酰胺的碱金属盐,醇盐的碱金属盐或由式(3)表示的硫醇盐的碱金属盐 ):MA,其中M为锂,钠或钾,X为氯,溴或碘原子。