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    • 6. 发明公开
    • 캐스코드 증폭기
    • CASCODE放大器
    • KR1020000026322A
    • 2000-05-15
    • KR1019980043817
    • 1998-10-20
    • 레이씨온 컴퍼니
    • 애들러스테인마이클지.제이틀린마크피.
    • H03F3/45
    • PURPOSE: A cas code amplifier is provided to use in several points according to a transfer path for transferring a television signal through a cable. CONSTITUTION: A cas code amplifier includes a substrate(40) and a pair of long active areas(50,52). The cas code amplifier includes a pair of transistors(24,28) aligned in a cas code structure. A pair of long active areas are formed in opposite ends on the substrate and each active area includes a plurality of transistor cells electrically connected with one another. A plurality of transistor cells formed in a first active area of the active areas mutually connect with an emitter ground arrangement and provide with a transistor of a pair of transistors. A plurality of transistor cells formed in a second active area of the active areas mutually connect with an emitter ground arrangement and provide with the other transistor of a pair of transistors.
    • 目的:根据用于通过电缆传送电视信号的传送路径,提供一个cas码放大器用于若干点。 构成:一个cas码放大器包括一个衬底(40)和一对长的有源区(50,52)。 所述条形码放大器包括一对以条形码结构排列的晶体管(24,28)。 一对长的有源区形成在衬底的相对端,并且每个有源区包括彼此电连接的多个晶体管单元。 形成在有源区域的第一有源区域中的多个晶体管单元与发射极接地布置相互连接并且提供一对晶体管的晶体管。 形成在有源区域的第二有源区域中的多个晶体管单元与发射极接地布置相互连接并提供一对晶体管的另一个晶体管。
    • 7. 发明公开
    • 헤테로 접합 바이폴라 트랜지스터 및 그 형성 방법
    • 异相双极晶体管及其形成方法
    • KR1020000025757A
    • 2000-05-06
    • KR1019980042955
    • 1998-10-14
    • 레이씨온 컴퍼니
    • 토ㅇ엘사케이.스프링클스티븐씨.타바타바이-알라비카말
    • H01L29/737
    • PURPOSE: A heterojunction bipolar transistor(HBT) and a method for forming the same are provided to etch a window through a selected area of indium gallium phosphide layer. CONSTITUTION: A window etching method etches a window through a selected are of indium gallium phosphide layer(InGap)(20). The method forms a silicon nitride layer(32) on a surface of indium gallium phosphide layer(InGap)(20), forms a window through a selected part of a silicon nitride layer(32) exposing a lower part of the selected area of the indium gallium phosphide layer(InGap)(20), and removes an exposed lower part of the indium gallium phosphide layer(InGap)(20). Thereby, a under-cutting of a lateral direction of indium gallium phosphide layer(InGap)(20) is prevented, and a sub-micron window is accurately formed.
    • 目的:提供异相结双极晶体管(HBT)及其形成方法,以通过铟镓磷化物层的选定区域蚀刻窗口。 构成:窗口蚀刻方法通过选定的铟镓磷化物层(InGap)(20)蚀刻窗口。 该方法在铟镓磷化物层(InGap)(20)的表面上形成氮化硅层(32),通过选定部分的氮化硅层(32)形成窗口,该窗口暴露出选定区域的下部 铟镓磷化物层(InGap)(20),并且去除铟镓磷化物层(InGap)(20)的暴露下部。 因此,防止了铟镓磷化物层(InGap)(20)的横向下切割,并且精确地形成亚微米窗口。