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1. 发明授权

KR100462006B1 산화주석/산화티타늄 이중산화물반도체 전극 및 색소증감 태양전지 失效
标题翻译： 산화주석/산화티타늄이중산화물반도체전극및색소증감태양전지
公开(公告)号：KR100462006B1
公开(公告)日：2004-12-17
申请号：KR1020010021250
申请日：2001-03-30
申请人： 태원필
发明人： 태원필
IPC分类号： H01L31/04 , H01L31/0224 , H01M14/00
CPC分类号： Y02E10/50
摘要： PURPOSE: An oxide tin/oxide titanium double oxide semiconductor electrode is provided to reduce the manufacturing costs by one third of the conventional price. CONSTITUTION: The oxide tin/oxide titanium double oxide semiconductor electrode includes a SnO2/TiO2 oxide semiconductor layer as well as an Eosin Y color agent. The color agent is provided on the surface of the semiconductor applied. The SnO2/TiO2 oxide semiconductor layer includes a glass substrate including a conductive surface and an oxide tin and oxide titanium. The SnO2/TiO2 oxide semiconductor layer includes RuL2(SCN)2 color agent on the surface thereof. Further, SnO2/TiO2 oxide semiconductor layer, a matching electrode which corresponds to the electrode and a Redox material touching the electrode.
摘要翻译：目的：提供氧化锡/氧化钛钛双氧化物半导体电极，以降低制造成本三分之一的传统价格。构成：氧化物锡/氧化钛双氧化物半导体电极包括SnO2 / TiO2氧化物半导体层以及曙红Y彩色剂。着色剂被提供在所应用的半导体的表面上。 SnO 2 / TiO 2氧化物半导体层包括包含导电表面和氧化物锡和氧化钛的玻璃基板。 SnO2 / TiO2氧化物半导体层在其表面上包含RuL2（SCN）2着色剂。此外，SnO2 / TiO2氧化物半导体层，与电极对应的匹配电极和与电极接触的氧化还原材料。

2. 发明授权

KR100580232B1 탄탈륨산칼륨:산화티타늄 나노다층박막 습도센서 失效
标题翻译：使用纳米结构多层钽酸钾的湿度传感器：二氧化钛薄膜
公开(公告)号：KR100580232B1
公开(公告)日：2006-05-17
申请号：KR1020040015646
申请日：2004-02-27
申请人： 태원필
发明人： 태원필 , 오재희
IPC分类号： G01N27/12 , B82Y15/00
摘要： 다층나노구조인 탄탈륨산칼륨/산화티타늄 및 산화티타늄/탄탈륨산칼륨의 산화물반도체 박막을 졸-겔 방법에 의해 제조하였으며, 그 다층구조의 반도체 박막을 습도감지부로 이용한 습도센서이다. 그 다층 반도체막은 나노입자와 다공질 구조를 갖는다. 다층박막의 두께는 880∼920 nm 이며, 그 다층박막의 입자크기는 13.9∼16.2 nm 이다.
습도센서, 다공질 구조, 탄탈륨산칼륨:산화티타늄, 다층박막, 나노입자,

3. 发明公开

KR1020040031728A 탄탈륨산칼륨:산화티타늄 나노다층박막 습도센서 失效
标题翻译： KT / TIO2纳米多层薄膜的湿度传感器
公开(公告)号：KR1020040031728A
公开(公告)日：2004-04-13
申请号：KR1020040015646
申请日：2004-02-27
申请人： 태원필
发明人： 태원필 , 오재희
IPC分类号： G01N27/12 , B82Y15/00
CPC分类号： G01N27/121 , G01N25/62 , G01N27/127
摘要： PURPOSE: A humidity sensor is provided to use a multilayered thin film formed of TiO2/KT and KT/TiO2 oxide semiconductor as a humidity sensing part at a low cost. CONSTITUTION: A humidity sensor includes an alumina substrate formed with an inter-digit Ag electrode pattern. The substrate is coated with a TiO2/KT and KT/TiO2 oxide semiconductor film of a multi-layered structure. Between the inter-digit Ag electrode pattern, the alumina substrate contacts the semiconductor film. The multi-layered semiconductor film is used as a humidity sensing part.
摘要翻译：目的：提供一种湿度传感器，以低成本使用由TiO2 / KT和KT / TiO2氧化物半导体形成的多层薄膜作为湿度感测部件。构成：湿度传感器包括形成有数字间Ag电极图案的氧化铝衬底。用多层结构的TiO 2 / KT和KT / TiO 2氧化物半导体膜涂覆基板。在数字间Ag电极图案之间，氧化铝基板接触半导体膜。多层半导体膜用作湿度感测部件。

4. 发明公开

KR1020020077854A 탄탈륨산칼륨 나노박막형 습도센서 无效
标题翻译：纳米薄膜类型湿度传感器
公开(公告)号：KR1020020077854A
公开(公告)日：2002-10-14
申请号：KR1020020053344
申请日：2002-08-31
申请人： 태원필
发明人： 태원필 , 오재희
IPC分类号： G01N27/12 , B82Y15/00
摘要： PURPOSE: A nano thin film type humidity sensor is provided to reduce manufacturing cost and achieve improved sensitivity of the sensor by using a spin coating and annealing process. CONSTITUTION: A nano thin film type humidity sensor is manufactured by using a potassium tantalate coating liquid which is produced from potassium ethoxide and tantalum ethoxide used as a raw material, after performing a hydrolysis, deflocculation and hydrothermal treatment to the raw material. The potassium tantalate coating liquid is spin coated by two times to an alumina(Al2O3) substrate deposited with a silver electrode, and a heat treatment is performed for every completion of the coating, for 5 minutes at the temperature of 300 Deg.C. An annealing process is performed for each sample after completion of the final coating, for 30 minutes at the temperature of 300, 500, 800 and 1000 Deg.C, respectively. Thus-obtained thin film has a porous structure, and a thickness of 185 to 306nm, where the particle size is 13.2 to 31nm.
摘要翻译：目的：提供纳米薄膜型湿度传感器，通过旋涂和退火工艺降低制造成本，提高传感器的灵敏度。构成：在对原料进行水解，絮凝和水热处理之后，使用由乙醇钾和乙醇钠制成的钽酸钾涂布液，制造纳米薄膜型湿度传感器。将钽酸钾涂布液两次旋涂到沉积有银电极的氧化铝（Al2O3）基材上，并且在300℃的温度下对涂层的每次完成进行热处理5分钟。在完成最终涂层后，分别在300,500,3800和1000℃的温度下对每个样品进行退火处理30分钟。由此得到的薄膜具有多孔结构，厚度为185〜306nm，粒径为13.2〜31nm。

5. 发明公开

KR1020020029030A SnO2:TiO2 나노다층박막 습도센서 失效
标题翻译： SNO2：TIO2纳米多层薄膜湿度传感器
公开(公告)号：KR1020020029030A
公开(公告)日：2002-04-17
申请号：KR1020020016218
申请日：2002-03-18
申请人： 태원필
发明人： 태원필
IPC分类号： G01N27/12 , B82Y15/00
摘要： PURPOSE: An SnO2:TiO2 nano multi-layer thin film humidity sensor is provided to reduce cost and achieve an improved performance of sensor by manufacturing oxide semiconductor multi-layer through sol-gel process. CONSTITUTION: A semiconductor film having a single layer structure of SnO2 and TiO2, and a multi-layer structure of TiO2/SnO2 and SnO2/TiO2, is produced onto an alumina(Al2O3) substrate coated with a silver electrode. The semiconductor film has nano-sized particle and porous structure. The single layer thin film has a thickness of 480 to 500nm, and the multi-layer thin film has a thickness of 620 to 670nm. The single layer thin film has a particle size of 7.9 to 10.8nm, and the multi-layer thin film has a particle size of 7.6 to 11.5nm.
摘要翻译：目的：提供一种SnO2：TiO2纳米多层薄膜湿度传感器，通过溶胶 - 凝胶法制造氧化物半导体多层，降低成本，提高传感器的性能。构成：在涂覆有银电极的氧化铝（Al 2 O 3）基板上制备具有SnO 2和TiO 2单层结构的半导体膜，以及TiO 2 / SnO 2和SnO 2 / TiO 2的多层结构。半导体膜具有纳米尺寸的颗粒和多孔结构。单层薄膜的厚度为480〜500nm，多层薄膜的厚度为620〜670nm。单层薄膜的粒径为7.9〜10.8nm，多层薄膜的粒径为7.6〜11.5nm。

6. 发明公开

KR1020020023821A 알루미늄이 도핑된 산화아연 박막형 습도센서 无效
标题翻译： AL-DOPED ZNO薄膜湿度传感器
公开(公告)号：KR1020020023821A
公开(公告)日：2002-03-29
申请号：KR1020010082160
申请日：2001-12-11
申请人： 태원필
发明人： 태원필 , 김준규 , 오재희
IPC分类号： G01N27/12 , B82Y15/00
CPC分类号： G01N27/121
摘要： PURPOSE: An Al-doped ZnO thin film humidity sensor is provided to produce a high performance humidity sensor at a low cost by using a compound coating liquid applied through spin coating and thermal treatment. CONSTITUTION: A ZnO coating liquid doped with 0.6wt% of Al is coated on an alumina substrate coated with a silver electrode by spin coating three to five times. After coating, thermal treatment is performed at 300deg.C for 10 minutes. After final coating, annealing is performed at 500-700deg.C for an hour. A humidity sensor is formed of a porous film having nano-sized particles. The thickness of the thin film is less than 235nm, and the particle size of the oxide semiconductor is less than 20.5nm.
摘要翻译：目的：提供一种Al掺杂的ZnO薄膜湿度传感器，通过使用通过旋涂和热处理施加的复合涂层液体，以低成本生产高性能湿度传感器。构成：用涂覆有银电极的氧化铝基板上涂覆掺杂有0.6重量％Al的ZnO涂层，旋涂三到五次。涂布后，在300℃下进行10分钟的热处理。最终涂布后，退火在500-700℃下进行1小时。湿度传感器由具有纳米尺寸颗粒的多孔膜形成。薄膜的厚度小于235nm，氧化物半导体的粒径小于20.5nm。

7. 发明授权

KR100568458B1 알루미늄이 도핑된 산화아연:산화티타늄 나노다층박막 습도센서 失效
标题翻译：使用纳米结构多层Al掺杂ZnO：TiO2薄膜的湿度传感器
公开(公告)号：KR100568458B1
公开(公告)日：2006-04-07
申请号：KR1020030010215
申请日：2003-02-13
申请人： 태원필
发明人： 태원필
IPC分类号： G01N27/12 , B82Y15/00
CPC分类号： G01N27/121
摘要： 은 전극패턴 (inter-digit Ag electrode)이 형성된 알루미나(Al
2 O
3 ) 기판위에 2층구조인 산화티타늄/알루미늄이 도핑된 산화아연(TiO
2 /Al-doped ZnO)과 알루미늄이 도핑된 산화아연/산화티타늄(Al-doped ZnO/TiO
2 )의 반도체막을 졸-겔 방법에 의해 제조하였으며, 그 반도체 박막을 습도감지막으로 이용한 습도센서이다. 그 2층 반도체막은 나노입자와 다공질 구조를 갖는다. 2층박막의 두께는 513∼587 nm 이며, 그 2층박막의 입자크기는 11.3∼24.6 nm이다.
습도센서, 알루미늄이 도핑된 산화아연:산화티타늄 다층박막, 나노입자, 다공질 구조

8. 发明授权

KR100475249B1 SnO2:TiO2 나노다층박막 습도센서 失效
标题翻译：使用纳米结构SnO2：TiO2多层薄膜的湿度传感器
公开(公告)号：KR100475249B1
公开(公告)日：2005-03-10
申请号：KR1020020016218
申请日：2002-03-18
申请人： 태원필
发明人： 태원필
IPC分类号： G01N27/12 , B82Y15/00
摘要： 은 전극패턴 (inter-digit Ag electrode)이 형성된 알루미나 기판위에 단층구조인 산화주석(SnO
2 )과 산화티타늄(TiO
2 ) 반도체막 및 다층(2층)구조인 산화티타늄/산화주석(TiO
2 /SnO
2 )과 산화주석/산화티타늄(SnO
2 /TiO
2 )의 반도체막을 졸-겔 방법에 의해 제조하였으며, 그 반도체 박막을 습도감지부로 이용한 습도센서이다. 그 단층 및 다층 반도체막은 나노입자와 다공질 구조를 갖는다. 그 단층박막의 두께는 480-500 nm 이며, 다층박막의 두께는 620-670 nm이다. 그 단층박막의 입자크기는 7.9-10.8 nm이며, 다층박막의 입자크기는 7.6-11.5 nm이다.

9. 发明授权

KR100425795B1 탄탈륨산칼륨 나노 졸-입자의 제조방법 失效
标题翻译： 탄탈륨산칼륨나노졸 - 입자의제조방법
公开(公告)号：KR100425795B1
公开(公告)日：2004-04-03
申请号：KR1020010032207
申请日：2001-06-02
申请人： 태원필
发明人： 태원필
IPC分类号： C01G35/00 , B82B3/00
摘要： PURPOSE: A method for preparing tantalum ethoxide nano-sol is provided to apply the product as dielectric material and photo-catalyst material for decomposing water by potassium ethoxide and tantalum ethoxide as the raw material and by means of hydrolysis, debinding and water-heating processes. CONSTITUTION: The method comprise steps of: dissolving potassium ethoxide(C2H5OK) in ethanol and mixing it with tantalum ethoxide(Ta(OC2H5)5) under agitating; refluxing it for 1 hour then placing the obtained potassium tantalum in distilled water to execute the hydrolysis process and to deposit it; washing several times resultant material; debinding the deposited material within an autoclave including tetramethylammonium hydroxide solution at 110 deg.C for 6 hour; then increasing temperature to 160-210 deg.C to produce the final product, nano-sol particles.
摘要翻译：目的：提供一种制备乙醇钽纳米溶胶的方法，以产物作为电介质材料和光催化材料，以乙醇钾和乙醇钽为原料，通过水解，脱胶和水加热过程分解水。构成：该方法包括以下步骤：将乙醇钾（C2H5OK）溶解在乙醇中并在搅拌下与乙醇钽（Ta（OC2H5）5）混合; 回流1小时，然后将得到的钽酸钾放入蒸馏水中进行水解过程并沉淀; 洗涤几次所得材料; 在110℃下将包含四甲基氢氧化铵溶液的高压釜内的沉积材料脱脂6小时; 然后升温至160-210℃以制备最终产物纳米溶胶粒子。

10. 发明公开

KR1020030022835A 알루미늄이 도핑된 산화아연:산화티타늄 나노다층박막 습도센서 失效
标题翻译： AL-DOPED ZNO：TIO2纳米多层薄膜湿度传感器
公开(公告)号：KR1020030022835A
公开(公告)日：2003-03-17
申请号：KR1020030010215
申请日：2003-02-13
申请人： 태원필
发明人： 태원필
IPC分类号： G01N27/12 , B82Y15/00
CPC分类号： G01N27/121
摘要： PURPOSE: An Al-doped ZnO:TiO2 multilayered thin film humidity sensor is provided to manufacture new oxide semiconductor multilayered thin films having nano particles and porous structures at low cost. CONSTITUTION: Oxide semiconductor monolayered thin films of Al-doped ZnO and TiO2 are formed by coating an Al2O3 substrate to which an inter-digital Ag electrode is attached, with coating solutions of TiO2 and Al-doped ZnO. A multilayered thin film is formed by coating the monolayered Al-doped ZnO thin film with TiO2. A multilayered thin film is formed by coating the monolayered TiO2 thin film with Al-doped ZnO. A humidity sensor is manufactured by using the multilayered thin films.
摘要翻译：目的：提供一种Al掺杂的ZnO：TiO2多层薄膜湿度传感器，以低成本制造具有纳米颗粒和多孔结构的新型氧化物半导体多层薄膜。构成：通过用涂覆有TiO 2和Al掺杂的ZnO的涂层涂覆附着有数字间电极的Al电极的Al 2 O 3衬底，形成Al掺杂的ZnO和TiO 2的氧化物半导体单层薄膜。通过用TiO 2涂覆单层Al掺杂的ZnO薄膜形成多层薄膜。通过用Al掺杂的ZnO涂覆单层TiO 2薄膜形成多层薄膜。通过使用多层薄膜制造湿度传感器。

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