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2. 发明公开

KR1020110005933A 태양전지용 고순도 실리콘의 제조방법 无效
标题翻译：用于精炼冶金级硅以生产太阳能级硅的方法
公开(公告)号：KR1020110005933A
公开(公告)日：2011-01-20
申请号：KR1020090063310
申请日：2009-07-13
申请人： 조북룡
发明人： 김영언
IPC分类号： C01B33/039 , H01L31/04
CPC分类号： Y02E10/50 , C01B33/037 , C01P2006/80
摘要： PURPOSE: A manufacturing method of a high purity silicon for a solar battery for implementing unidirectional solidification is provided to eliminate the boron with high segregation coefficient and refine since reducing the total around time. CONSTITUTION: A manufacturing method of a high purity silicon for the solar battery comprises next steps. A liquid state the metallurgical grade silicon(20) within a container is fused into the decompression container surrounding the metallurgical grade silicon with heater. The argon gas and the hydrogen gas including the steam are inspired within the liquid state metallurgical grade silicon. The thermal chemical reaction of the Si-B-P-Ar system is optimized. The boron and the liquid state within the metallurgical grade silicon impurity phosphorus are eliminated to the gas phase oxide HBO and PO.
摘要翻译：目的：提供一种用于实现单向凝固的太阳能电池用高纯度硅的制造方法，从而减少高分散系数的硼，并且随着时间的推移而减少。构成：用于太阳能电池的高纯度硅的制造方法包括以下步骤。液体状态下，容器内的冶金级硅（20）通过加热器熔化在包围冶金级硅的减压容器中。包括蒸汽的氩气和氢气在液态冶金级硅内受到启发。 Si-B-P-Ar体系的热化学反应得到优化。冶金级硅杂质磷内的硼和液态被排除到气相氧化物HBO和PO中。

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