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    • 4. 发明公开
    • 반도체 기재 물질 상의 삼산화티탄칼슘 계면 주형 구조물
    • 超导体上的CATIO3界面模板结构
    • KR1020000029832A
    • 2000-05-25
    • KR1019997000984
    • 1997-07-31
    • 록히드 마틴 에너지 리서치 코포레이션
    • 미키,로드니,앨런워커,프레드릭,조셉
    • C30B25/14
    • H01L29/517C30B23/02C30B25/02C30B25/18C30B29/32H01L21/02197H01L21/28167H01L21/31691H01L28/56H01L29/78391
    • PURPOSE: A structure including a film of a desired perovskite which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure are provided. CONSTITUTION: A process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The orientation of the perovskite of the template is rotated 45°with the respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from the fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film (84) is built up upon a semiconductor based material (72) and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component. This process can be used to form FFETs with semiconducting substrate (72), a transistor (70), a source(78) and drain, gate electrode (82) and a gate dielectric (83). The perovskite (84) is part of the gate electrode.
    • 目的:提供一种结构,其包括覆盖并与半导体基底的材料表面完全相当的所需钙钛矿的膜和用于构造该结构的相关工艺。 构成:构造结构的方法涉及在材料表面和所需的钙钛矿膜之间建立钙钛矿界面模板薄膜。 模板的钙钛矿的取向相对于下面的材料表面的取向旋转45°,从而实现晶格结构从(基于半导体的材料)的fcc到简单立方晶格结构的转变 钙钛矿,同时维持钙钛矿模板薄膜和下层材料表面之间完全相当的周期性。 本发明的薄膜生长技术可用于制造其中钙钛矿薄膜(84)构建在半导体基材料(72)上的固态电组件,并且钙钛矿薄膜适于显示出铁电,压电,热电,电 - 组件使用期间的光学或大介电特性。 该工艺可用于形成具有半导体衬底(72),晶体管(70),源极(78)和漏极,栅电极(82)和栅极电介质(83)的FFET。 钙钛矿(84)是栅电极的一部分。