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    • 82. 发明公开
    • 칩 저항기 및 그 제조 방법
    • 芯片电阻及其制造工艺
    • KR1020080043268A
    • 2008-05-16
    • KR1020077029737
    • 2006-06-20
    • 로무 가부시키가이샤
    • 요네다마사끼
    • H01C7/00H01C17/06
    • H01C7/22H01C1/148H01C7/003H01C17/006Y10T29/49099
    • A chip resistor (1) comprising a chip substrate (2), a pair of terminal electrodes (3, 4) formed on the upper surface of the substrate (2) while spaced apart from each other, and a meandering resistor film (5) formed between the pair of terminal electrodes (3, 4). Each terminal electrode (3, 4) has an inner edge (3a, 4a) inclining obliquely from one side face (2a) toward the other side face (2b) of the substrate (2), wherein a portion of each inner edge (3a, 4a) close to the resistor film (5) is connected electrically with a thin width portion (7, 8) extending integrally outward from the end face (5a, 5b) of the resistor film (5).
    • 一种片状电阻器(1),包括芯片基板(2),形成在所述基板(2)的上表面上并彼此间隔开的一对端子电极(3,4)和曲折电阻膜(5) 形成在一对端子电极(3,4)之间。 每个端子电极(3,4)具有从一个侧面(2a)向基板(2)的另一个侧面(2b)倾斜倾斜的内边缘(3a,4a),其中每个内边缘(3a)的一部分 ,4a)靠近电阻膜(5)与从电阻膜(5)的端面(5a,5b)整体向外延伸的薄宽度部分(7,8)电连接。
    • 86. 发明公开
    • 써지전압 보호용 소자
    • 保护电压的元件
    • KR1020070000306A
    • 2007-01-02
    • KR1020050055947
    • 2005-06-27
    • 삼성전자주식회사
    • 김희만아츠히사오가와
    • H02H9/04
    • H01C7/102H01C1/148H01C7/10H05K1/0254H05K1/181
    • An element for protecting a surge voltage is provided to minimize the volume of element by making the element having surge voltage protection and impedance matching functions in the form of a single chip. In an element for protecting a surge voltage, a body(11a) has a hexahedral shape and is charged with varistor material. A pair of input signal electrodes(12a) are attached to one side of the body(11a) in up/down directions. A pair of output signal electrodes(13a) are attached to the other side of the body(11a) in the up/down directions. A ground electrode(14a) is attached to an upper surface of the body(11a). At least a pair of signal connection electrode plates(15a) connect the input signal electrode(12a) and the output signal electrode(13a). A ground plate is contacted to the ground electrode(14a).
    • 提供了用于保护浪涌电压的元件,以通过使元件具有单芯片形式的浪涌电压保护和阻抗匹配功能来最小化元件的体积。 在用于保护浪涌电压的元件中,主体(11a)具有六面体形状并且用非线性电阻材料充电。 一对输入信号电极(12a)在上下方向上安装在主体(11a)的一侧。 一对输出信号电极(13a)在上下方向上安装在主体(11a)的另一侧。 接地电极(14a)附接到主体(11a)的上表面。 至少一对信号连接电极板(15a)连接输入信号电极(12a)和输出信号电极(13a)。 接地板与接地电极(14a)接触。
    • 89. 发明公开
    • 다중층 칩 배리스터 및 그 제조 방법
    • 包括在多个体内和外部电极之间形成的玻璃层的多层芯片变体及其制造方法
    • KR1020040055621A
    • 2004-06-26
    • KR1020030091830
    • 2003-12-16
    • 티디케이가부시기가이샤
    • 타케하나마키카즈히로세오사무오치아이토시아키
    • H01C7/10
    • H01C17/283H01C1/148H01C7/102H01C7/18
    • PURPOSE: A multilayer chip varistor and a method of manufacturing the same are provided to prevent a degradation of varistor characteristics during plating of the surfaces of outer electrodes. CONSTITUTION: A multilayer chip varistor(100) comprises a varistor body(1) including a plurality of varistor layers(1a,1b,1c) and inner electrodes(2a,2b) interposed between the inner electrodes; outer electrodes(3a) arranged on ends of the varistor body and connected to the inner electrodes; and glass layers(4) interposed between the varistor body and the outer electrodes. A method of manufacturing a multilayer chip varistor comprises a step of forming a varistor body including varistor layers and inner electrodes; a step of applying a conductive paste containing a glass material on ends of the varistor body; and a step of baking the conductive paste so as to form glass layers between the varistor body and the outer electrodes by melting the glass material contained in the conductive paste.
    • 目的:提供一种多层芯片变阻器及其制造方法,以防止外电极表面电镀过程中变阻器特性的劣化。 构成:多层片状变阻器(100)包括:包含多个可变电阻层(1a,1b,1c)的变阻器主体(1)和位于内部电极之间的内部电极(2a,2b) 外部电极(3a),布置在可变压敏电阻体的端部并连接到内部电极; 以及介于压敏电阻体与外电极之间的玻璃层(4)。 一种制造多层芯片变阻器的方法包括形成包括变阻器层和内部电极的可变电阻体的步骤; 在所述可变电阻体的端部上涂敷含有玻璃材料的导电膏的工序; 以及通过熔化包含在导电浆料中的玻璃材料,烘烤导电浆料以形成可变压敏电阻体和外部电极之间的玻璃层的步骤。