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71. 发明公开

KR1020130021756A 필름과 글라스의 어셈블리 장치 有权
标题翻译：装配膜和玻璃的装置
公开(公告)号：KR1020130021756A
公开(公告)日：2013-03-06
申请号：KR1020110084213
申请日：2011-08-23
申请人： 주식회사 에스에프에이 , 삼성디스플레이 주식회사
发明人： 김영민 , 전용배 , 이동호 , 이상문 , 박민호 , 정태원
IPC分类号： H01L51/56 , G02F1/13
CPC分类号： G02F1/1313 , G02F1/1303 , G02F2001/133354 , H01L21/67126 , H01L51/56
摘要： PURPOSE: An assembly device of a film and glass is provided to improve the efficiency of a deposition process by simply combining the film with the glass. CONSTITUTION: A glass stage(110) supports glass for manufacturing a flat display device. A film stage(120) supports a film combined with the glass and includes a central stage(130) for supporting the film and a side stage(140) for supporting the film. The side stage for supporting the film is arranged in the outside of the central stage for supporting the film and supports the side region of the film. A bottom body(150) supports the glass stage and the side stage for supporting the film. A top body(160) supports the central stage for supporting the film. [Reference numerals] (AA) Film
摘要翻译：目的：提供膜和玻璃的组装装置，通过简单地将膜与玻璃组合来提高沉积工艺的效率。构成：玻璃台（110）支撑用于制造平面显示装置的玻璃。薄膜台（120）支撑与玻璃组合的薄膜，并且包括用于支撑薄膜的中央台（130）和用于支撑薄膜的侧台（140）。用于支撑膜的侧台布置在中央台的外侧，用于支撑膜并支撑膜的侧面区域。底体（150）支撑玻璃台和用于支撑膜的侧台。顶部主体（160）支撑用于支撑胶片的中央舞台。（附图标记）（AA）膜

72. 发明公开

KR1020120053295A 박막 트랜지스터 표시판 및 이를 포함하는 표시 장치, 그리고 그 제조 방법 无效
标题翻译：薄膜晶体管阵列和包括其的显示器件及其制造方法
公开(公告)号：KR1020120053295A
公开(公告)日：2012-05-25
申请号：KR1020100114498
申请日：2010-11-17
申请人： 삼성디스플레이 주식회사
发明人： 최태영 , 김보성 , 김영민 , 장선필 , 조강문 , 정연택 , 이기범
IPC分类号： G02F1/1368 , G02F1/1343 , G02F1/1334 , G02F1/1362 , H01L27/12 , G02F1/167
CPC分类号： H01L27/1225 , G02F1/13439 , G02F2001/13685 , G02F2001/1676 , G02F1/1368 , G02F1/1334 , G02F1/136286
摘要： PURPOSE: A film transistor display panel and a display device with the same, and a manufacturing method thereof are provided to reduce manufacturing costs and manufacturing steps even though an oxide semiconductor is used in a thin film transistor. CONSTITUTION: A source electrode and a drain electrode are arranged on an insulating substrate. Oxide semiconductors are arranged on the source electrode and the drain electrode. A protective film(180) covers the oxide semiconductor and the insulating substrate. A gate electrode(124) is arranged on the protective film. A pixel electrode(191) is connected to the drain electrode.
摘要翻译：目的：薄膜晶体管显示面板及其显示装置及其制造方法，即使在薄膜晶体管中使用氧化物半导体，也能够降低制造成本和制造步骤。构成：源电极和漏极布置在绝缘基板上。氧化物半导体布置在源电极和漏电极上。保护膜（180）覆盖氧化物半导体和绝缘基板。栅电极（124）布置在保护膜上。像素电极（191）连接到漏电极。

73. 发明公开

KR1020120041568A 막 구조물 제조 방법 无效
标题翻译：制造薄膜结构的方法
公开(公告)号：KR1020120041568A
公开(公告)日：2012-05-02
申请号：KR1020100103074
申请日：2010-10-21
申请人： 삼성디스플레이 주식회사
发明人： 장선필 , 김영민 , 김보성 , 정연택 , 이용수 , 최태영 , 이기범 , 조강문
IPC分类号： C23C14/22 , C23C14/58 , C23C16/56
CPC分类号： H01L29/7869 , H01L21/02667 , H01L21/324 , H01L29/41733 , H01L29/66765 , H01L29/66969 , H01L29/78633
摘要： PURPOSE: A membrane structure manufacturing method is provided to implement processes at low temperatures by using microwave heat treatment and enhance work efficiency by preheating a precursor. CONSTITUTION: A membrane structure manufacturing method comprises forming a precursor on a substrate(S10), preheating the precursor(S20) at a temperature of 100-200°C, and forming a membrane structure by irradiating the precursor with 300MH-300GHz microwaves at a temperature of 350°C or less(S30).
摘要翻译：目的：提供一种膜结构制造方法，通过使用微波热处理在低温下实施工艺，并通过预热前体来提高工作效率。构成：膜结构体的制造方法包括在基板上形成前体（S10），在100〜200℃的温度下预热前体（S20），通过在300MH-300GHz的微波下照射前体而形成膜结构温度为350℃以下（S30）。

74. 发明公开

KR1020100040576A 박막 트랜지스터 표시판 및 그의 제조 방법 无效
标题翻译：薄膜晶体管板及其制造方法
公开(公告)号：KR1020100040576A
公开(公告)日：2010-04-20
申请号：KR1020080099762
申请日：2008-10-10
申请人： 삼성디스플레이 주식회사
发明人： 조승환 , 김보성 , 김영민 , 정남옥
IPC分类号： G02F1/136 , G02F1/13
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/124
摘要： PURPOSE: A TFT(Thin Film Transistor) display plate and a method of manufacturing the same are provided to form organic insulating film into simple structure by eliminating a bank covering around the organic insulating film. CONSTITUTION: A hydrophobic insulating film(30) is formed on insulating substrate. A hydrophilic source electrode is formed on the insulating substrate. A hydrophilic source electrode is separated with a source electrode. A source cover layer(51) exposes an end part of the source electrode. A drain cover layer exposes an end part of a drain electrode.
摘要翻译：目的：提供TFT（薄膜晶体管）显示板及其制造方法，通过消除有机绝缘膜周围的堤覆盖，形成简单的结构的有机绝缘膜。构成：在绝缘基板上形成疏水绝缘膜（30）。在绝缘基板上形成亲水源电极。用源电极分离亲水源电极。源极覆盖层（51）露出源电极的端部。漏极覆盖层暴露漏电极的端部。

75. 发明公开

KR1020090077518A 박막트랜지스터 표시판, 이를 포함하는 액정표시장치 및이의 제조 방법 无效
标题翻译：薄膜晶体管，包括其的液晶显示器及其制造方法
公开(公告)号：KR1020090077518A
公开(公告)日：2009-07-15
申请号：KR1020080003518
申请日：2008-01-11
申请人： 삼성디스플레이 주식회사
发明人： 김영민 , 김보성 , 신중한 , 최태영 , 안보경
IPC分类号： G02F1/136
CPC分类号： H01L51/0545 , G02F1/1368 , H01L51/107
摘要： A thin film transistor display panel, a liquid crystal display comprising the same and a method of manufacturing the same are provided to make an organic passivation film function as a color filter, thereby simplifying a manufacturing process. An organic thin film transistor(300) comprises a gate electrode(310) connected to a gate line(100), a source electrode connected to a data line(200), a drain electrode(330) separated from the source electrode and an organic semiconductor layer(340) forming a channel between the source electrode and the drain electrode. A pixel electrode(600) is connected to the drain electrode. An organic passivation film(500) protects the organic semiconductor layer. The organic passivation film transmits predetermined color light.
摘要翻译：提供薄膜晶体管显示面板，包括该液晶显示面板的液晶显示器及其制造方法，以使有机钝化膜作为滤色器起作用，从而简化了制造工艺。有机薄膜晶体管（300）包括连接到栅极线（100）的栅电极（310），连接到数据线（200）的源电极，与源电极分离的漏电极（330）半导体层（340）在源电极和漏电极之间形成沟道。像素电极（600）连接到漏电极。有机钝化膜（500）保护有机半导体层。有机钝化膜透射预定的颜色光。

76. 发明公开

KR1020070069601A 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널 有权
标题翻译：显示基板，其制造方法和具有该基板的显示面板
公开(公告)号：KR1020070069601A
公开(公告)日：2007-07-03
申请号：KR1020050131918
申请日：2005-12-28
申请人： 삼성디스플레이 주식회사
发明人： 이제훈 , 김영민 , 김보성 , 이준영 , 강성욱
IPC分类号： G02F1/136 , G02F1/355 , G02F1/361
CPC分类号： H01L51/102 , G02F1/13439 , H01L27/283 , H01L51/0541 , H01L51/0545
摘要： A display substrate, a method for manufacturing the display substrate, and a display panel having the display substrate are provided to minimize damage of the interface of an organic insulating layer and a transparent conductive layer by forming the transparent conductive layer formed on the organic insulating layer with use of oxide nitride material. A display substrate includes source lines, gate lines, pixels, and organic switching elements and pixel electrodes. The source lines are extended in a first direction. The gate lines are extended in a second direction perpendicular to the first direction. The pixels are defined by the source lines and the gate lines. The organic switching elements are respectively formed at the pixels. Each of the organic switching elements includes a source electrode(151) connected to each source line, a gate electrode(131) connected to each gate line, and an organic semiconductor layer(160) formed on the gate electrode. The pixel electrodes(155) are formed of a transparent oxide nitride material and respectively disposed at the pixels. The pixel electrodes are electrically connected to the respective organic switching elements.
摘要翻译：提供显示基板，显示基板的制造方法以及具有显示基板的显示面板，以通过形成有机绝缘层上形成的透明导电层来最小化有机绝缘层和透明导电层的界面的损伤使用氧化物氮化物材料。显示基板包括源极线，栅极线，像素以及有机开关元件和像素电极。源极线在第一方向上延伸。栅极线在垂直于第一方向的第二方向上延伸。像素由源极线和栅极线限定。有机开关元件分别形成在像素处。每个有机开关元件包括连接到每个源极线的源电极（151），连接到每个栅极线的栅电极（131）和形成在栅电极上的有机半导体层（160）。像素电极（155）由透明氧化物氮化物材料形成，并且分别设置在像素处。像素电极电连接到各个有机开关元件。

77. 发明授权

KR102132220B1 양자점 광학 소자의 제조 방법 및 양자점 광학 소자를 포함한 백라이트 유닛 有权
公开(公告)号：KR102132220B1
公开(公告)日：2020-07-10
申请号：KR1020130165581
申请日：2013-12-27
申请人： 삼성디스플레이 주식회사
发明人： 심문기 , 이백희 , 김영민 , 김학선 , 노남석 , 박재병 , 박해일
IPC分类号： G02F1/13357 , G02F1/017

78. 发明授权

KR102084229B1 유기전계발광 표시장치 有权
公开(公告)号：KR102084229B1
公开(公告)日：2020-03-04
申请号：KR1020130035917
申请日：2013-04-02
申请人： 삼성디스플레이 주식회사
发明人： 김영민 , 윤덕찬 , 남기현
IPC分类号： H01L51/50 , H05B33/04

79. 发明公开

KR1020170136109A 색변환 패널 및 이를 포함하는 표시 장치 审中-实审
标题翻译：颜色转换面板和包括其的显示设备
公开(公告)号：KR1020170136109A
公开(公告)日：2017-12-11
申请号：KR1020160067303
申请日：2016-05-31
申请人： 삼성디스플레이 주식회사
发明人： 이광근 , 권정현 , 김영민 , 박해일 , 백문정
IPC分类号： G02F1/15 , G02F1/1335 , G02F1/017 , H01B5/14 , H01B1/02
CPC分类号： G02F1/133528 , G02F1/133514 , G02F1/133553 , G02F1/133617 , G02F2001/133565 , G02F2202/36 , H01L27/124
摘要： 일실시예에따른색변환패널은기판, 상기기판위에위치하며소정의간격으로이격된복수의편광패턴을포함하는편광층, 및상기편광층위에위치하며양자점을포함하는색변환층및 투과층을포함하고, 상기복수의편광패턴중 적어도하나는, 상기기판위에위치하는외광간섭층, 및상기외광간섭층위에위치하는반사층을포함한다.
摘要翻译：根据一个实施例的颜色转换板被定位在基板上，所述基板与所述偏振层，并且所述颜色转换层和设置在包括量子点，其包括多个以预定间隔隔开的偏振图案的偏振层上的渗透层上面的和包括所述多个偏振图案中的至少一个，并且包括设置在基板上的外部光干涉层，以及设置在所述外部光干涉层上形成反射层。

80. 发明授权

KR101801845B1 산화물 반도체 제조 방법 有权
公开(公告)号：KR101801845B1
公开(公告)日：2017-11-28
申请号：KR1020100116897
申请日：2010-11-23
申请人： 삼성디스플레이 주식회사 , 연세대학교 산학협력단
发明人： 정연택 , 김보성 , 김영민 , 김현재 , 이두형 , 최태영 , 이기범 , 장선필 , 임유승 , 조강문 , 김동림 , 김시준 , 김두나
IPC分类号： H01L29/786
摘要： 본발명의일 실시예에따른산화물반도체의제조방법은주석원소를포함하는제1 화합물을제1 열처리하는단계, 아연, 인듐, 갈륨, 탈륨, 지르코늄으로이루어진군에서적어도하나이상의금속원소를포함하는제2 화합물을제2 열처리하는단계, 무수화처리된제1 화합물및 제2 화합물을혼합한후 유기용매를혼합하여전구체용액을제조하는단계, 전구체용액을기판에도포하여전구체층을형성하는단계, 전구체층을제3 열처리하여산화물반도체를형성하는단계를포함하고, 제1 열처리는 100℃이상제1 화합물의용융점이하의온도에서진행하고, 제2 열처리는 100℃이상제2 화합물의용융점이하의온도에서진행한다.

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