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    • 54. 发明公开
    • 그래핀을 포함하는 도전성 접착제 및 이를 이용한 수퍼커패시터
    • 用于超级吸收剂的导电胶粘剂
    • KR1020130093762A
    • 2013-08-23
    • KR1020110144623
    • 2011-12-28
    • 한국전기연구원
    • 양선혜김익준
    • C09J9/02C09J201/00C09D7/00H01G11/22
    • Y02E60/13C09J9/02C09D7/00C09J201/00H01G11/22
    • PURPOSE: A conductive adhesive is provided to improve a long term reliability and output characteristic of supercapacitor with low aspect ratio and an excellent conductivity. CONSTITUTION: A conductive adhesive for supercapacitor coprises an adhesion having a adhesiveness and a graphene carbon material. The graphene carbon material is manufactured from 0,1 or more of shape aspect ratio of graphite, less than 100 graphene layers, and more than 200 m^2/g specific surface area. The mixed ratio of the adhesive and graphene is between 50-90 weight% of graphene. Moreover, the supercapacitor is manufactured with spraying the conductive adhesive paste on the aluminum current conductor, and the thickness of solid conductive adhesive paste is between 5-30 micron.
    • 目的:提供导电粘合剂,以提高具有低纵横比和优异导电性的超级电容器的长期可靠性和输出特性。 构成:用于超级电容器的导电粘合剂共同具有粘合性的粘合性和石墨烯碳材料。 石墨烯碳材料由0.1或更多的石墨形状长宽比,小于100个石墨烯层和大于200m 2 / g比表面积制成。 粘合剂和石墨烯的混合比例在石墨烯的50-90重量%之间。 此外,超导电容器是通过在铝电流导体上喷涂导电粘合剂浆料制成的,并且固体导电粘合膏的厚度在5-30微米之间。
    • 56. 发明公开
    • 스토리지노드의 높이를 증가시키는 커패시터 형성 방법
    • 用于制造存储节点高度增加的电容器的方法
    • KR1020120056074A
    • 2012-06-01
    • KR1020100117596
    • 2010-11-24
    • 에스케이하이닉스 주식회사
    • 박종국송한상
    • H01L21/8242H01L27/108
    • H01G13/06H01G11/22Y02E60/13
    • PURPOSE: A capacitor formation method for increasing the height of a storage node is provided to increase the effective surface area of a dielectric layer, thereby increasing the capacitance of a capacitor compared to the capacitance of a limited substrate surface area. CONSTITUTION: A first mold layer(330) is formed on a semiconductor substrate(100). A first penetration hole(331) is formed on the semiconductor substrate. A hole blocking layer(400) blocks an entrance of the first penetration hole. A second mold layer(350) is formed on the first mold layer and the hole blocking layer. A second penetration hole(351) is formed by penetrating the second mold layer and being arranged on the first penetration hole. The hole blocking layer which is exposed by the second penetration hole is selectively removed.
    • 目的:提供用于增加存储节点的高度的电容器形成方法,以增加电介质层的有效表面积,从而与受限的衬底表面积的电容相比增加电容器的电容。 构成:在半导体衬底(100)上形成第一模层(330)。 在半导体衬底上形成第一穿透孔(331)。 空穴阻挡层(400)阻挡第一穿透孔的入口。 在第一模具层和空穴阻挡层上形成第二模具层(350)。 第二穿透孔(351)通过穿透第二模具层并且布置在第一穿透孔上而形成。 选择性地除去由第二贯通孔露出的空穴阻挡层。