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    • 51. 发明公开
    • 낸드타입 반도체 메모리장치 및 그의 제조방법
    • NAND型半导体存储器件及其制造方法
    • KR1020040013189A
    • 2004-02-14
    • KR1020020046007
    • 2002-08-03
    • 윤주영
    • 윤주영
    • H01L27/115
    • PURPOSE: A semiconductor memory device is provided to reduce the size by forming gate spacings below the photolithography resolution and make it unnecessary to form a high density source/drain region in the memory cell transistor. CONSTITUTION: A plurality of gates are formed at regular intervals on a semiconductor substrate(200). The first and the second spacers(260) are respectively formed at on side of each side gate among the plurality of gates. Low density impurity regions(241) are formed in the substrate at both sides of each gate, respectively. High density impurity regions(243) are formed in the substrate under the first and the second spacers.
    • 目的:提供半导体存储器件以通过在光刻分辨率之下形成栅极间距来减小尺寸,并且不需要在存储单元晶体管中形成高密度源极/漏极区域。 构成:在半导体衬底(200)上以规则的间隔形成多个栅极。 第一和第二间隔物(260)分别形成在多个栅极中的每个侧栅极的一侧。 分别在每个栅极两侧的衬底中形成低密度杂质区(241)。 在第一和第二间隔物下方的衬底中形成高密度杂质区(243)。