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41. 发明公开

KR1020110112477A 포토마스크 블랭크 및 그 제조 방법과 포토마스크 및 그 제조 방법 有权
标题翻译：光电隔离滤光片及其制作方法及其光刻胶及其制作方法
公开(公告)号：KR1020110112477A
公开(公告)日：2011-10-12
申请号：KR1020117021044
申请日：2010-02-04
申请人： 호야 가부시키가이샤
发明人： 하시모또,마사히로 , 스즈끼,도시유끼 , 이와시따,히로유끼
IPC分类号： G03F1/38
CPC分类号： G03F1/50 , G03F1/32 , G03F1/54
摘要： 파장 200㎚ 이하의 노광광이 적용되는 포토마스크를 제작하기 위해서 이용되는 포토마스크 블랭크는, 투광성 기판 상에 박막을 구비하고, 상기 박막은, 천이 금속, 규소 및 탄소를 포함하고, 규소 탄화물 및/또는 천이 금속 탄화물을 갖는 재료로 이루어진다.

42. 发明公开

KR1020110090887A ＥＵＶ 리소그래피용 반사형 마스크 블랭크 无效
标题翻译：反射型掩模用于EUV LITHOGRAPHY
公开(公告)号：KR1020110090887A
公开(公告)日：2011-08-10
申请号：KR1020117006094
申请日：2009-10-28
申请人： 아사히 가라스 가부시키가이샤
发明人： 하야시가즈유키
IPC分类号： H01L21/027 , G03F1/16
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/24 , G03F1/54 , H01L21/0274 , G03F1/16
摘要： A reflective mask blank for EUV lithography having an absorbing layer which has a low reflectivity with respect to wavelength regions of EUV light and pattern inspection light, and which is easily controllable to obtain desired film composition and film thickness. The reflective mask blank for EUV lithography having a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light which are formed in this order on a substrate, wherein the absorbing layer contains at least tantalum (Ta), boron (B), nitrogen (N) and hydrogen (H), and the absorbing layer has a B content that is 1 at % or greater but less than 5 at %, an H content that is between 0.1 and 5 at %, a Ta+N total content that is between 90 and 98.9%, and a Ta:N composition ratio (Ta:N) that is between 8:1 and 1:1.

43. 发明公开

KR1020110089759A ＥＵＶ 마스크 및 그 형성방법 失效
标题翻译：极品超紫外线掩膜及其制造方法
公开(公告)号：KR1020110089759A
公开(公告)日：2011-08-09
申请号：KR1020100009297
申请日：2010-02-01
申请人： 에스케이하이닉스 주식회사
发明人： 문재인
IPC分类号： H01L21/027 , G03F1/00
CPC分类号： G03F1/24 , G03F1/38 , G03F1/54 , G03F7/70433 , H01L21/0332
摘要： PURPOSE: An extreme ultra violet mask and a formation method thereof are provided to modify a structure of an extreme ultra violet mask, thereby increasing resolution power by improving mask reflectivity and simplifying a mask manufacturing process. CONSTITUTION: An extreme ultra violet(EUV) mask includes a quartz substrate, a multilayered membrane(115), and a structure pattern. The multilayered membrane is formed on the upper part of the quartz substrate. The structure pattern is included between layers of the multilayered membrane. The multilayered membrane includes molybdenum(105) and silicon(110). The structure pattern is comprised of an insulating layer.
摘要翻译：目的：提供极紫外线掩膜及其形成方法，以改变极紫外线掩膜的结构，从而通过提高掩模反射率和简化掩模制造工艺来提高分辨率。构成：极紫外（EUV）掩模包括石英衬底，多层膜（115）和结构图案。多层膜形成在石英基板的上部。结构图案包括在多层膜的层之间。多层膜包括钼（105）和硅（110）。结构图案由绝缘层构成。

44. 发明公开

KR1020110077968A 선폭 보정 과정을 포함하는 위상반전마스크의 제조방법 无效
标题翻译：用于制造相移尺寸的方法，包括关键尺寸过程
公开(公告)号：KR1020110077968A
公开(公告)日：2011-07-07
申请号：KR1020090134671
申请日：2009-12-30
申请人： 에스케이하이닉스 주식회사
发明人： 유충한
IPC分类号： H01L21/027 , G03F1/08
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/54 , G03F1/70 , G03F7/70433
摘要： PURPOSE: A method for manufacturing a phase shift mask is provided to improve the accuracy of linewidth correction by controlling variables which affects a linewidth correction process. CONSTITUTION: A phase shift layer and a light shielding layer are formed on a substrate(100). A first resist pattern is formed to which selectively exposes a part of the surface of the light shield layer A monitoring pattern is formed on a frame region(B) by etching a light shielding layer frame pattern using a second resist pattern as an etch mask. A phase shift layer pattern(140a) is exposed by etching the light shielding layer pattern of the monitoring pattern. A phase shift layer main pattern(145) is arranged on the main cell region(A) of the substrate.
摘要翻译：目的：提供一种用于制造相移掩模的方法，以通过控制影响线宽校正处理的变量来提高线宽校正的精度。构成：在基板（100）上形成相移层和遮光层。形成第一抗蚀剂图案，通过使用第二抗蚀剂图案作为蚀刻掩模蚀刻遮光层框架图案，选择性地暴露遮光层A的表面的一部分，监视图案形成在框架区域（B）上。通过蚀刻监视图案的遮光层图案来曝光相移层图案（140a）。相移层主图案（145）布置在基板的主单元区域（A）上。

45. 发明公开

KR1020110045305A 반도체 소자를 위한 패턴의 보정 방법 有权
标题翻译：用于半导体器件的补偿图案的方法
公开(公告)号：KR1020110045305A
公开(公告)日：2011-05-04
申请号：KR1020090101817
申请日：2009-10-26
申请人： 삼성전자주식회사
发明人： 이명수 , 김병국
IPC分类号： H01L21/027
CPC分类号： G03F1/54 , G03F1/50 , G03F1/70 , Y10S430/146 , G03F7/70425 , G03F7/70433 , G03F7/70516 , G03F7/70616 , H01L21/67242
摘要： PURPOSE: A method for correcting patterns for a semiconductor device is provided to minimize the correction time of a pattern, thereby increasing a correction throughput. CONSTITUTION: A shadowing element(185) is formed in a transparent substrate(100) of a photo mask based on a first shadowing map. A first shadowing area(182La) includes the shadowing element. The first shadowing map includes a plurality of first unit zones. The size of the first shadowing area is the same as the size of the first unit zones of the first shadowing area. The shadowing element in the second shadowing area has the same properties as the shadowing element of the first shadowing area.
摘要翻译：目的：提供一种用于校正半导体器件的图案的方法，以最小化图案的校正时间，从而增加校正通过量。构成：基于第一阴影图，在光掩模的透明基板（100）中形成阴影元件（185）。第一阴影区域（182La）包括阴影元件。第一阴影图包括多个第一单位区域。第一个阴影区域的大小与第一个阴影区域的第一个单位区域的大小相同。第二遮蔽区域中的阴影元件具有与第一阴影区域的阴影元件相同的属性。

46. 发明公开

KR1020110043745A 광반투과막, 포토마스크 블랭크 및 포토마스크, 및 광반투과막의 설계 방법 有权
标题翻译： SEMITRANSMITTING FILM，PHOTOMASK BLANK，PHOTOMASK和SEMITRESMITTING FILM设计方法
公开(公告)号：KR1020110043745A
公开(公告)日：2011-04-27
申请号：KR1020117005535
申请日：2005-06-10
申请人： 호야 가부시키가이샤
发明人： 시오타유키 , 노자와오사무
IPC分类号： G03F1/54
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength », wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0

47. 发明公开

KR1020110039021A 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법 有权
标题翻译：具有碱性化学清洁剂的相变片和制造相变片掩模的方法
公开(公告)号：KR1020110039021A
公开(公告)日：2011-04-15
申请号：KR1020090096277
申请日：2009-10-09
申请人： 삼성전자주식회사
发明人： 문세건 , 남동석 , 김훈
IPC分类号： G03F1/26 , H01L21/027
CPC分类号： G03F1/32 , G03F1/54 , G03F1/82 , G03F1/0046
摘要： PURPOSE: A phase shift mask and a method for manufacturing the same are provided to prevent the change of a phase and the transmittance by completely eliminating impurities on the phase shift mask. CONSTITUTION: A substrate(100) is prepared. A phase shift mask is formed on the substrate. A light-blocking film is formed. A hard mask film is formed. A photosensitive film mask is formed. A hard mask pattern is formed using the photosensitive film mask. A light-blocking pattern and a phase shift film pattern(115) are formed using the hard mask film. A phase shift pattern(118) is formed by partially etching the light-blocking pattern and etching partially exposed substrate.
摘要翻译：目的：提供一种相移掩模及其制造方法，以通过完全消除相移掩模上的杂质来防止相位和透射率的变化。构成：制备基材（100）。在基板上形成相移掩模。形成遮光膜。形成硬掩模膜。形成感光膜掩模。使用感光膜掩模形成硬掩模图案。使用硬掩模膜形成遮光图案和相移膜图案（115）。通过部分蚀刻遮光图案并蚀刻部分曝光的基板来形成相移图案（118）。

48. 发明公开

KR1020110037065A 노광마스크 및 반도체소자의 형성방법 无效
标题翻译：曝光掩模和形成半导体器件的方法
公开(公告)号：KR1020110037065A
公开(公告)日：2011-04-13
申请号：KR1020090094324
申请日：2009-10-05
申请人： 에스케이하이닉스 주식회사
发明人： 이진화
IPC分类号： H01L21/027
CPC分类号： G03F1/54 , G03F1/70 , G03F7/70216 , G03F7/70433
摘要： PURPOSE: An exposure mask and a semiconductor device forming method are provided to improve the characteristic, the yield rate, and the reliability of the semiconductor device by improving the uniformity of the FICD(Final Inspection Critical Dimension). CONSTITUTION: A light-shield pattern defines four light-transmitting regions(320) overlapped on the contact hole reserved area on a quartz substrate(300). A substructure including the etched layer is formed on the semiconductor substrate. A photosensitive pattern is formed on the upper part of the etched layer. A contact hole is defined on the photosensitive pattern using the exposure mask.
摘要翻译：目的：提供曝光掩模和半导体器件形成方法，通过改善FICD的均匀性（最终检验临界尺寸）来提高半导体器件的特性，产率和可靠性。构成：遮光图案限定了重叠在石英基板（300）上的接触孔保留区上的四个透光区域（320）。在半导体衬底上形成包括蚀刻层的子结构。在蚀刻层的上部形成感光图案。使用曝光掩模在感光图案上界定接触孔。

49. 发明公开

KR1020110028983A 포토마스크의 제조방법 및 펠리클 제거방법 无效
标题翻译：用于制造照片掩模的方法和从照片掩模中转移胶囊的方法
公开(公告)号：KR1020110028983A
公开(公告)日：2011-03-22
申请号：KR1020090086646
申请日：2009-09-14
申请人： 에스케이하이닉스 주식회사
发明人： 전준
IPC分类号： H01L21/027
CPC分类号： G03F1/62 , G03F1/54 , G03F1/76 , G03F1/80 , G03F7/70983
摘要： PURPOSE: A photomask manufacturing method and a pellicle removing method are provided to remove the adhesive easily when removing the pellicle by partially dissolving the adhesive by radiating the ultraviolet from the rear of the mask immediately before removing the pellicle form the mask substrate. CONSTITUTION: A light shielding layer(220) is formed on a mask substrate(210). The resist pattern which exposes the area for circuit pattern and the area for pellicle attachment is formed on the on the light shielding layer. The light shielding layer is formed by etching the light shielding layer using the resist pattern as the mask. An adhesive(240) is spread on the mask substrate.
摘要翻译：目的：提供光掩模制造方法和防护薄膜组件方法，以便在从掩模基板去除防护薄膜之前，通过从掩模的后面辐射紫外线来部分地溶解粘合剂来去除防护薄膜组件时容易地去除粘合剂。构成：在掩模基板（210）上形成遮光层（220）。在遮光层上形成曝光电路图案区域和防尘薄膜组件附着区域的抗蚀剂图案。通过使用抗蚀剂图案作为掩模蚀刻遮光层来形成遮光层。将粘合剂（240）铺展在掩模基板上。

50. 发明公开

KR1020100134448A 위상반전 마스크 및 그 제조방법 无效
标题翻译：相移片及其制造方法
公开(公告)号：KR1020100134448A
公开(公告)日：2010-12-23
申请号：KR1020090053072
申请日：2009-06-15
申请人： 에스케이하이닉스 주식회사
发明人： 박의상
IPC分类号： G03F1/26 , H01L21/027
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/54 , G03F1/76
摘要： PURPOSE: A method for fabricating a phase shift mask is provided to shorten processing time by simplifying a manufacturing process and to suppress defects caused by contamination. CONSTITUTION: A method for fabricating a phase shift mask comprises the steps of: successively forming a phase shift layer, a first resist layer, a light-blocking layer and a second resist layer on a transparent substrate(200); patterning the second resist film in order to define a region in which the phase shift layer pattern is formed; patterning the light-blocking layer, the first resist layer, and the shift layer as the patterned second resist layer; exposing the first resist film formed on a region excluding the light-blocking region; and removing the exposed first resist layer and the light-blocking layer formed on the region excluding the light-blocking region.
摘要翻译：目的：提供一种制造相移掩模的方法，通过简化制造工艺并抑制由污染引起的缺陷来缩短处理时间。构成：制造相移掩模的方法包括以下步骤：在透明基板（200）上依次形成相移层，第一抗蚀剂层，遮光层和第二抗蚀剂层; 图案化第二抗蚀剂膜以限定其中形成相移层图案的区域; 图案化阻光层，第一抗蚀剂层和移位层作为图案化的第二抗蚀剂层; 曝光形成在除了遮光区域之外的区域上的第一抗蚀膜; 以及除去形成在除了遮光区域之外的区域上的暴露的第一抗蚀剂层和遮光层。

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