专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明公开

KR1020080002855A 기판 프로세싱 방법 및 실리콘 함유막 형성 방법 有权
标题翻译：一种从基板上去除氧化物的方法和系统
公开(公告)号：KR1020080002855A
公开(公告)日：2008-01-04
申请号：KR1020077024257
申请日：2006-03-23
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 딥앤소니 , 리스앨런존 , 오승호
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02046 , C23C16/0245 , C23C16/46 , H01J37/32357 , H01L21/02063 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02658 , H01L21/3185 , H01L21/76814
摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900°C to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.
摘要翻译：用于处理衬底的方法和系统包括在处理室中提供衬底，其中衬底包含其上形成的氧化物层，激发耦合到处理室的远程等离子体源中的含氢气体，并将衬底暴露于在低于约900℃的第一衬底温度下激发的含氢气体的流动以从衬底去除氧化物层。然后将衬底保持在不同于第一衬底温度的第二温度，并且在第二衬底温度下在衬底上形成含硅膜。

42. 发明公开

KR1020070108153A 가스 방전 램프의 방전 튜브와 같은 램프 전구의 내부 코팅 无效
标题翻译：灯泡内部涂层，如排气管排气管
公开(公告)号：KR1020070108153A
公开(公告)日：2007-11-08
申请号：KR1020077016353
申请日：2005-12-19
申请人： 아우어 라이팅 게엠베하
发明人： 퀴퍼토마스 , 하멜마가레타 , 묄레크리스토프 , 엘리흐만디트마르 , 크론포스라이너 , 귄터클라우스
IPC分类号： H01J9/20 , H01J9/24 , H01J61/84
CPC分类号： H01K3/005 , C03C17/004 , C03C17/3417 , C23C16/0245 , C23C16/045 , C23C16/402 , H01J9/20 , H01J61/35 , H01K1/32
摘要： The invention relates to a discharge tube made of a quartz glass for discharge lamps having a diffusion barrier inner layer made of silicon oxide, which is applied as a single layer and/or produced on the inner surface, to a method for producing and/or applying a diffusion barrier inner layer of this type, and to the use of such a discharge tube.
摘要翻译：本发明涉及一种用于放电灯的放电管，其具有由氧化硅制成的扩散阻挡层，作为单层施用和/或在内表面上制造的扩散阻挡层，用于制造和/或应用这种类型的扩散阻挡层内层，以及使用这种放电管。

43. 发明授权

KR100550421B1 얕은트렌치절연방법및장치 有权
公开(公告)号：KR100550421B1
公开(公告)日：2006-04-21
申请号：KR1019970059591
申请日：1997-11-13
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 시아,리-쿤 , 이에,엘리 , 네마니,스리니바스
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/4411 , C23C16/4412 , C23C16/45561 , C23C16/4586 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02362 , H01L21/2255 , H01L21/31612 , H01L21/31625
摘要： 본 발명은 반도체 웨이퍼의 고온(적어도 약 500-800 ℃) 처리를 위한 시스템, 방법 및 장치를 제공한다. 본 발명의 시스템, 방법 및 장치는 다중 처리 단계가 전체 처리 시간을 감소하고 고종횡비 소자에 대한 고품질 처리를 보장하도록 동일한 챔버에서 인-시튜 수행되도록 한다. 또한 동일 챔버내의 다중 처리 단계 수행은 처리 파라미터의 제어를 증가시키고 소자 손상을 감소시킨다. 특히, 본 발명은 고온 증착, 가열 및 두께 균일성을 가지는 유전체막을 형성하기 위한 유효한 세척, 양호한 갭 충전 능력, 고밀도, 저습도, 및 다른 요구된 특성을 제공할 수 있다.

44. 发明公开

KR1020060004698A 불소 첨가 카본막의 형성 방법 失效
标题翻译：形成氟化碳膜的方法
公开(公告)号：KR1020060004698A
公开(公告)日：2006-01-12
申请号：KR1020057022302
申请日：2004-05-19
申请人： 도쿄엘렉트론가부시키가이샤 , 오미 다다히로
发明人： 오미다다히로 , 히라야마마사키
IPC分类号： H01L21/314 , H01L21/31 , H01L21/205
CPC分类号： C23C16/0245 , C23C16/26 , H01L21/0212 , H01L21/02315 , H01L21/3127 , H01L21/02115 , H01L21/02274 , H01L21/02527
摘要： With a view toward enhancing the adhesion between a fluorinated carbon film and a substratum film, there is provided a method of forming a fluorinated carbon film on a substrate to be treated, characterized in that the method comprises the first step of, by means of a substrate treating unit, effecting plasma excitation of a rare gas and carrying out surface treatment of the substrate with the plasma-excited rare gas and the second step of forming a fluorinated carbon film on the resultant substrate, the substrate treating unit including a microwave antenna electrically connected to a microwave power source.
摘要翻译：为了提高氟化碳膜和底膜之间的粘附性，提供了一种在待处理基材上形成氟化碳膜的方法，其特征在于，该方法包括第一步，通过基板处理单元，利用等离子体激发的稀有气体进行等离子体激发稀释气体并进行基板的表面处理，以及在所得到的基板上形成氟化碳膜的第二工序，所述基板处理单元包括微波天线连接到微波电源。

45. 发明公开

KR1020050033777A 실리콘이 도핑된 다이아몬드상 카본 박막이 코팅된 수도밸브용 세라믹 디스크와 그것을 채용한 수도밸브 및 그 제조방법 无效
标题翻译：陶瓷盘状金刚石相碳膜用于水龙头的硅和使用盘的水龙头阀及其制造方法
公开(公告)号：KR1020050033777A
公开(公告)日：2005-04-13
申请号：KR1020030069714
申请日：2003-10-07
申请人： 주식회사 신한세라믹 , (주)제이 앤 엘 테크
发明人： 전영하 , 김용우 , 정민교 , 박헌탁
IPC分类号： C23C16/22
CPC分类号： C23C16/26 , C23C16/0245 , C23C16/0272 , C23C16/513 , F16K3/0263 , F16K25/005 , Y10S427/106
摘要： To provide a ceramic disk for water faucet valve on which a thin film having more improved lubrication property is formed, a water faucet valve using the ceramic disk for water faucet valve, and a method for manufacturing the ceramic disk for water faucet valve. In a ceramic disk for water faucet valve comprising a disk matrix(1), and a thin film layer coated on a friction surface of the disk matrix, a ceramic disk for water faucet valve is characterized in that the thin film layer comprises a diamond phase carbon thin film layer(1b) doped with silicon, wherein the ceramic disk for water faucet valve further comprises a silicon layer(1a) coated between the disk matrix and the diamond phase carbon thin film layer doped with silicon, wherein the diamond phase carbon thin film layer doped with silicon contains 1 to 50 at.% of the silicon, and wherein the diamond phase carbon thin film layer doped with silicon has thickness of 0.1 to 3 mum. A method for manufacturing a ceramic disk for water faucet valve comprises: a preparation step of installing a disk matrix in a chamber; and a deposition step of depositing silicon together with carbon on the matrix, wherein the method further comprises an etching step of etching the matrix by an ion gun before the deposition step, and wherein the method further comprises a pre-deposition step of pre-depositing silicon on the matrix such that a silicon layer is formed on the matrix before the deposition step.
摘要翻译：为了提供一种用于水龙头阀的陶瓷盘，其上形成有更好的润滑性能的薄膜，使用水龙头阀的陶瓷盘的水龙头阀以及用于制造水龙头陶瓷盘的方法。在包括盘基体（1）的水龙头阀陶瓷盘和涂覆在盘基体的摩擦表面上的薄膜层上，用于水龙头阀的陶瓷盘的特征在于，薄膜层包括金刚石相掺杂硅的碳薄膜层（1b），其中用于水龙头阀的陶瓷盘还包括涂覆在盘基体和掺杂有硅的金刚石相碳薄膜层之间的硅层（1a），其中金刚石相碳薄掺杂硅的薄膜层含有1〜50原子％的硅，其中掺杂有硅的金刚石相碳薄膜层的厚度为0.1〜3μm。一种水龙头阀陶瓷盘的制造方法，其特征在于，包括以下步骤：将圆盘基体安装在室内; 以及沉积步骤，其将硅与碳一起沉积在基体上，其中所述方法还包括在沉积步骤之前用离子枪蚀刻所述基质的蚀刻步骤，并且其中所述方法还包括预沉积步骤硅，使得在沉积步骤之前在基体上形成硅层。

46. 发明授权

KR100436383B1 물리적 증착 및 화학적 증착 공정에 의한 동시 증착 장치 및 방법 失效
标题翻译：空值
公开(公告)号：KR100436383B1
公开(公告)日：2004-06-16
申请号：KR1020017011225
申请日：2000-02-15
申请人： 에너지 컨버젼 디바이시즈, 아이엔씨.
发明人： 도터버디알.2세 , 도흘러조아킴 , 엘리슨티모시 , 이쭈마사추구 , 오브신스키허버트씨.
IPC分类号： C23C16/00
CPC分类号： H01J37/32192 , C23C14/562 , C23C16/0245 , C23C16/511 , C23C16/545
摘要： 본원에는 2가지 서로다른 진공 증착 공정에 의해 기판상에 2개 이상의 서로다른 박막 재료 층을 진공 증착하기 위한 장치 및 방법이 개시되어 있다. 또한, 본원에는 세장형 기판상에 박막 재료를 균일하게 증착하도록 마이크로파 강화 CVD 공정을 사용하는 신규한 선형 도포기가 개시되어 있다.
摘要翻译：通过两种不同的真空沉积工艺将至少两层薄膜材料真空沉积到衬底上的装置和方法。还公开了一种用于使用微波增强CVD在细长衬底上均匀沉积材料薄膜的新型线性涂布器。

47. 发明公开

KR1020040002662A 레이저 ＣＶＤ 장치 및 레이저 ＣＶＤ 방법 失效
标题翻译：激光辅助CVD系统，激光辅助CVD方法，图形缺陷校正系统和图形缺陷校正方法
公开(公告)号：KR1020040002662A
公开(公告)日：2004-01-07
申请号：KR1020030041013
申请日：2003-06-24
申请人： 오므론 레이저프론트 가부시키가이샤
发明人： 모리시게유키오 , 우에다아츠시
IPC分类号： C23C16/44
CPC分类号： C23C16/45519 , C23C16/0245 , C23C16/047 , C23C16/483 , H01J37/32339
摘要： PURPOSE: To provide a laser assisted CVD system capable of suppressing the occurrence of cracks in a film formed by laser assisted CVD by increasing adhesiveness between the film and the surface covered by the film. CONSTITUTION: The laser-assisted CVD system has first means 2, 3 for turning a pretreatment gas into plasma by arc discharge and for supplying the plasma to a substrate 10, a means for laser beam irradiation, and a means for confining a film-forming gas by blocking off outside air. The system also has second means 4, 5, 6 for activating the film-forming gas, protected from outside air and then supplied to the substrate 10, by laser beam irradiation. The substrate 10 is moved and its film formation surface is pretreated by the first means 2, 3, and then is again moved for film formation on the pretreated surface by the second means 4, 5, 6.
摘要翻译：目的：提供一种激光辅助CVD系统，其能够通过增加膜与被膜覆盖的表面之间的粘合性来抑制由激光辅助CVD形成的膜中的裂纹的发生。构成：激光辅助CVD系统具有第一装置2,3用于通过电弧放电将预处理气体转化成等离子体，并将等离子体供给到基板10，用于激光束照射的装置和用于限制成膜的装置气体通过阻挡外面的空气。该系统还具有用于激活成膜气体的第二装置4,5,6，其被外部空气保护，然后通过激光束照射被提供给基板10。基板10移动，其成膜表面由第一装置2,3进行预处理，然后再次通过第二装置4,5,6在预处理表面上移动以进行成膜。

48. 发明公开

KR1020030090650A 부품 제조 방법 및 진공 처리 시스템 无效
标题翻译：零件制造方法和真空处理系统
公开(公告)号：KR1020030090650A
公开(公告)日：2003-11-28
申请号：KR1020037011145
申请日：2002-02-14
申请人： 오씨 외를리콘 발처스 악티엔게젤샤프트
发明人： 와그너루돌프 , 월트쉬시그프리드 , 램쥐르겐
IPC分类号： H01L21/02
CPC分类号： C23C16/4411 , C23C16/0245 , C23C16/4404 , C23C16/503 , H01J37/32477 , H01J37/32522
摘要： 에피택셜 층을 코팅하는 경우와 같이 그 코팅에 대해 동일한 요건이 요구되는 코팅된 부품을 제조하려면, 반응성 가스를 공정실(PR) 중에 유입하여 그 반응성 가스를 저 에너지 플라즈마 방전에 의해 활성화시킨다. 그러한 방법의 산업적 유용성을 증진시키기 위해, 그러한 방법에서 공정실(PR)을 주위에 놓인 용기(1)의 내벽으로부터 격리시킨다(14).

49. 发明公开

KR1020030001707A 칼날에 대한 다이아몬드성 카본 코팅 방법 및 그에 의해제조된 코팅칼날 无效
标题翻译：金刚石类碳刷和其制造的涂层刀片的方法
公开(公告)号：KR1020030001707A
公开(公告)日：2003-01-08
申请号：KR1020010037048
申请日：2001-06-27
申请人： 주식회사 바이오테크이십일
发明人： 정제호 , 서태석 , 최보영 , 이형구
IPC分类号： C23C16/27
CPC分类号： C23C16/26 , A61F9/00836 , A61F2009/00872 , C23C16/0245 , Y10S427/103
摘要： PURPOSE: A blade on which a lubricity and wear resistance reinforced diamond like carbon coating layer is formed and a method for coating the blade are provided, and a LASIK operating blade on which a lubricity and wear resistance reinforced diamond like carbon coating layer is formed and a method for coating the blade are provided. CONSTITUTION: The method for diamond like carbon coating a blade comprises the steps of (a) cleaning the blade and installing the blade in a chamber; (b) plasma cleaning the blade under the vacuum degree of 1x10¬-4 torr or less for 1 to 10 minutes; and (c) carbon coating the plasma cleaned blade in the vacuum degree range of 5x10¬-4 to 100x10¬-5 torr for 10 to 200 minutes (S24), wherein the step (a) comprises (a1) cleaning the blade using alkaline cleaning solution and ultrasonic cleaner for 5 to 60 minutes, and cleaning the cleaned blade using alcohol and acetone (S21); (a2) mounting the blade on a jig; and (a3) mounting the blade mounted jig on the inner part of the chamber (S22), the vacuum degree is controlled by injecting nitrogen and/or argon gas into the chamber, temperature inside the chamber is maintained to 50 to 200 deg.C, electric current of an arc source used during the plasma cleaning and/or the carbon coating is maintained to 10 to 50 A, and the method further comprises (d) waiting until temperature inside the chamber reaches 50 deg.C or less after completing the carbon coating (S25); and (e) injecting nitrogen and/or air into the chamber so that pressure in the chamber is the same as the atmospheric pressure (S26).
摘要翻译：目的：提供一种其上形成有润滑性和耐磨性的增强金刚石如碳涂层的刀片和用于涂覆刀片的方法，以及形成润滑性和耐磨性的增强金刚石如碳涂层的LASIK操作刀片，提供了一种涂覆刀片的方法。构成：用于金刚石碳涂覆刀片的方法包括以下步骤：（a）清洁刀片并将刀片安装在腔室中; （b）在1×10 -4乇或更低的真空度下等离子体清洁叶片1至10分钟; （c）在真空度范围为5×10 -4至100×10 -5乇的范围内将等离子体清洁的刀片碳涂覆10至200分钟（S24），其中步骤（a）包括（a1）使用碱清洁溶液和超声波清洗剂5至60分钟，并使用酒精和丙酮清洁清洁的刀片（S21）; （a2）将刀片安装在夹具上; 和（a3）将刀片安装的夹具安装在腔室的内部（S22），通过将氮气和/或氩气注入腔室来控制真空度，该腔室内的温度保持在50〜200℃ 在等离子体清洁和/或碳涂覆期间使用的电弧源的电流保持在10至50A，并且该方法还包括（d）等待直到室内温度达到50℃或更低碳涂层（S25）; 和（e）将氮气和/或空气注入到室中，使得室中的压力与大气压力相同（S26）。

50. 发明公开

KR1020020063141A 배면 오염의 저감을 위한 인 시츄 웨이퍼 열처리 失效
标题翻译：在减少后备污染的现场加热
公开(公告)号：KR1020020063141A
公开(公告)日：2002-08-01
申请号：KR1020020004641
申请日：2002-01-26
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 로스맨켄트
IPC分类号： H01L21/205
CPC分类号： C23C16/0209 , C23C14/022 , C23C16/0245 , H01J2237/022
摘要： PURPOSE: In-situ wafer heating for reduced backside contamination is provided to prepare a substrate for processing in a chamber. CONSTITUTION: A method for preparing a substrate for processing in a chamber having a substrate receiving portion comprises; positioning the substrate within the chamber(13) not on the substrate receiving portion; providing a gaseous flow to the chamber; striking a plasma from the gaseous flow to heat the substrate; and moving the substrate to the substrate receiving portion for processing after the substrate has been heated by the plasma.
摘要翻译：目的：提供用于减少背面污染的原位晶片加热，以制备用于在室中加工的基板。构成：一种用于制备在具有基板接收部分的室中进行处理的基板的方法，包括：将基板定位在不在基板接收部分上的室（13）内; 向腔室提供气流; 从气流冲击等离子体以加热基底; 并且在衬底被等离子体加热之后，将衬底移动到衬底接收部分进行处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式