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    • 44. 发明公开
    • 스퍼터 장치
    • 装置到喷头
    • KR1020100137723A
    • 2010-12-31
    • KR1020090055914
    • 2009-06-23
    • 주식회사 에스에프에이
    • 전종진김정희정홍기신상호김영민
    • H01L21/203
    • C23C14/50C23C14/566C23C14/568H01L21/67201H01L21/67706
    • PURPOSE: A sputtering apparatus is provided to improve the uniformity of heat emitted from a heater to a substrate by arranging a heat radiating plate on the upper side of the heater. CONSTITUTION: Target is combined with an upper region in the internal space of a chamber body(110). The target functions as sputtering source supplying a deposition material to a substrate(G). A heater(130) heats a substrate by being combined with a lower region in the internal space of the chamber body. A substrate transferring unit(140) includes a substrate transferring part(141) supporting both sides of the substrate. A plurality of sagging preventive parts(151) partially supports the rear side of the substrate.
    • 目的:提供一种溅射装置,通过在加热器的上侧设置散热板来提高从加热器发射到基板的热均匀性。 构成:目标与室主体(110)的内部空间中的上部区域结合。 该靶作为将沉积材料供给到基板(G)的溅射源。 加热器(130)通过与室主体的内部空间中的下部区域结合来加热基板。 基板转印单元(140)包括支撑基板两侧的基板转印部(141)。 多个下垂防止部(151)部分地支撑基板的后侧。
    • 50. 发明公开
    • 플라즈마 소스 기구 및 성막 장치
    • 等离子体源机构和膜形成装置
    • KR1020100076067A
    • 2010-07-05
    • KR1020107012794
    • 2008-12-12
    • 가부시키가이샤 알박
    • 마츠모토다카후미스즈키도시히로나카무타유우마츠모토마사히로구보마사시
    • H05H1/46C23C14/58
    • H05H1/46C23C14/568C23C14/5826H01J37/321H01J37/3266
    • Provided is a plasma processing technology which makes it possible to generate plasma of a large area with excellent repeatability, is applicable to various purposes and uses a low-cost plasma source. Specifically, a plasma source mechanism (1) is applicable to a vacuum apparatus (21) having a vacuum chamber (20), and the plasma source mechanism is provided with an antenna section (12), which is disposed outside a vacuum tank (20) through a dielectric section (10) and permits high frequency power to be applied; and a magnet section (11) which is disposed in the vicinity of the antenna section (12) outside the vacuum chamber (20) through the dielectric section (10) and has a rectangular shape that corresponds to the antenna section (12). In the antenna section (12), first and second antenna coils (14, 15) are adjacently disposed, and the first and the second antenna coils (14, 15) are connected in parallel to each other.
    • 提供了能够以优异的重复性产生大面积的等离子体的等离子体处理技术,适用于各种目的,并且使用低成本的等离子体源。 具体而言,等离子体源机构(1)适用于具有真空室(20)的真空装置(21),等离子体源机构设置有天线部(12),其设置在真空槽(20)的外侧 )通过介电部分(10),并允许施加高频功率; 以及通过介电部分(10)设置在真空室(20)外部的天线部分(12)附近的磁体部分(11),并且具有对应于天线部分(12)的矩形形状。 在天线部分(12)中,相邻地布置第一和第二天线线圈(14,15),并且第一和第二天线线圈(14,15)彼此并联连接。