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41. 发明公开

KR1020140082066A 고순도 산화 칼슘 제조 방법 无效
标题翻译：生产高纯氧化钙的方法
公开(公告)号：KR1020140082066A
公开(公告)日：2014-07-02
申请号：KR1020120151314
申请日：2012-12-21
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 김종호 , 박준표 , 석성호 , 김성욱 , 이병필
IPC分类号： C01F11/16 , C01F11/02
CPC分类号： C01F11/16 , C01F11/18 , C01F11/24 , C01P2006/80
摘要： A method for preparing calcium oxide with high purity is disclosed. The method for preparing calcium oxide with high purity according to an embodiment of the present invention is a method for preparing calcium oxide with high purity obtained by removing phosphor and boron from calcium carbonate containing phosphor and boron, and includes: a step of preparing an aqueous calcium chloride solution using calcium carbonate; a step of removing phosphor from the aqueous calcium chloride solution; a step of removing boron from the aqueous calcium chloride solution using an ion exchange resin absorbing boron; and a step of preparing calcium oxide from the aqueous calcium chloride solution from which the boron is removed.
摘要翻译：公开了一种制备高纯度氧化钙的方法。根据本发明实施方案的制备高纯度氧化钙的方法是通过从含有碳酸钙和磷的硼中除去磷和硼而获得的高纯度的氧化钙的制备方法，包括：使用碳酸钙的氯化钙溶液; 从氯化钙水溶液中除去荧光体的步骤; 使用吸收硼的离子交换树脂从氯化钙水溶液中除去硼的步骤; 以及从除去硼的氯化钙水溶液中制备氧化钙的步骤。

42. 发明公开

KR1020140081990A 탄화규소 제조 장치 및 탄화규소 제조 방법 有权
标题翻译：制造碳化硅的装置及制造碳化硅的方法
公开(公告)号：KR1020140081990A
公开(公告)日：2014-07-02
申请号：KR1020120150605
申请日：2012-12-21
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 박준표 , 김종호 , 김성욱 , 이병필 , 석성호
IPC分类号： C01B31/36 , C04B35/565
CPC分类号： C01B32/956 , C01P2006/80 , F27B2014/066
摘要： An apparatus for manufacturing silicon carbide according to the present invention includes: a crucible for charging carbonized silicon (Si) and graphite (C); and an electromagnetism applying coil surrounding the outer surface of the crucible while applying high-frequency electromagnetic field onto the crucible. The method for manufacturing silicon carbide includes: a step for charging silicon (Si) and graphite (C) into the crucible; a step for generating silicon carbide by melting the silicon by heating the graphite by applying a first high-frequency electromagnetic field to the crucible; and a step for recovering the silicon carbide by moving the silicon carbide toward the surface of the crucible by applying a second high-frequency electromagnetic field to the crucible.
摘要翻译：本发明的碳化硅制造装置包括：碳化硅（Si）和石墨（C）的充填用坩埚; 以及围绕坩埚的外表面的电磁施加线圈，同时将高频电磁场施加到坩埚上。制造碳化硅的方法包括：将硅（Si）和石墨（C）装入坩埚中的步骤; 通过对坩埚施加第一高频电磁场来加热石墨来熔化硅来生成碳化硅的步骤; 以及通过向坩埚施加第二高频电磁场来将碳化硅移动到坩埚的表面来回收碳化硅的步骤。

43. 发明授权

KR101382682B1 실리콘 정련 장치 및 그 방법 有权
标题翻译：用于精制硅的装置和方法
公开(公告)号：KR101382682B1
公开(公告)日：2014-04-10
申请号：KR1020110138557
申请日：2011-12-20
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 이병필 , 김종호 , 박준표 , 김성욱 , 석성호
IPC分类号： C01B33/037 , B01J19/18 , B01D71/02 , B01D37/02
摘要： 본 발명은 실리콘 정련 장치 및 그 방법에 관한 것으로, 보다 상세하게는 실리콘에 함유되어 있는 불순물을 효과적으로 제거함으로써 실리콘의 순도를 증가시키는 장치 및 방법에 관한 것이다.
본 발명의 일측면에 따른 실리콘 정련장치는 공급되는 실리콘 분말과 산용액을 반응시켜 상기 실리콘 분말에 함유되어 있는 불순물을 제거하는 반응조; 상기 반응조와 연결되고 상기 반응조로부터 상기 실리콘 분말과 상기 산용액의 혼합액을 공급받으며 상기 혼합액을 필터를 통해 고상의 고순도 실리콘과 액상의 폐액으로 분리하는 고액분리부; 및 상기 반응조 및 상기 고액분리부로부터 배출되는 유해가스를 처리 및 배출시키는 유해가스 처리부를 포함할 수 있다.

44. 发明公开

KR1020130075510A 실리콘 정련방법 有权
标题翻译：硅精炼工艺
公开(公告)号：KR1020130075510A
公开(公告)日：2013-07-05
申请号：KR1020110143900
申请日：2011-12-27
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 김성욱 , 박준표 , 김종호 , 석성호 , 김명균 , 이병필
IPC分类号： C01B33/021 , H01L31/042 , C22B5/04
CPC分类号： Y02E10/50 , C01B33/037
摘要： PURPOSE: A silicon refining process is provided to control a cooling operation and to effectively implement a stirring operation. CONSTITUTION: A silicon refining process includes the steps of: firstly refining the molten metallic silicon with slag (S20); secondly refining the metallic silicon by adding metallic calcium in the slag (S30); cooling and stirring the secondary refined metallic silicon (S40); treating the cooled metallic silicon with acid (S50); and coagulating the acid treated metallic silicon in one direction (S60). [Reference numerals] (S10) Metallic silicon; (S20) First refinement (Slag refinement); (S30) Second refinement (Calcium + Slag refinement); (S40) Cooling control (Electromagnetic induction and vapor injection); (S50) Acid treatment; (S60) One directional coagulation; (S70) Solar grade silicon
摘要翻译：目的：提供硅精制工艺以控制冷却操作并有效地实施搅拌操作。构成：硅精炼工艺包括以下步骤：首先用熔渣精炼熔融金属硅（S20）; 二次通过在炉渣中加入金属钙来精炼金属硅（S30）; 冷却和搅拌二次精炼金属硅（S40）; 用酸处理冷却的金属硅（S50）; 并在一个方向上使酸处理的金属硅凝结（S60）。（附图标记）（S10）金属硅; （S20）第一细化（Slag细化）; （S30）二次细化（Calcium + Slag refinement）; （S40）冷却控制（电磁感应和蒸气喷射）; （S50）酸处理; （S60）单向凝结; （S70）太阳能级硅

45. 发明公开

KR1020130073594A 실리콘의 일방향 응고장치 有权
标题翻译：用于方向固化硅的设备
公开(公告)号：KR1020130073594A
公开(公告)日：2013-07-03
申请号：KR1020110141538
申请日：2011-12-23
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 김종호 , 이병필 , 박준표 , 김성욱 , 정진호 , 김명균 , 석성호 , 이용현
IPC分类号： C30B11/00 , C30B29/06 , H01L21/02
摘要： PURPOSE: A one direction silicon coagulation apparatus is provided to save heating time by using an induction melting furnace for melting and resistance heating for coagulation. CONSTITUTION: An induction heating part (1) is formed in a housing. A hollow part is formed in an induction heating part. A one direction coagulation part (2) is arranged in the housing. The one direction coagulation part has a hollow part connected to the hollow part of the induction heating part. A mold (4) moves the hollow part up and down.
摘要翻译：目的：提供一种单向硅凝固装置，通过使用感应熔炼炉进行熔化和电阻加热，以节省加热时间。构成：在壳体中形成感应加热部件（1）。感应加热部形成中空部。单向凝固部件（2）布置在壳体中。单向凝结部具有与感应加热部的中空部连接的中空部。模具（4）上下移动中空部件。

46. 发明公开

KR1020120073915A 가스 블로윙을 이용한 실리콘 정련방법 및 이를 이용한 태양광급 실리콘 제조방법 无效
标题翻译：使用气体蒸发精炼硅的方法和使用其制造太阳能硅的方法
公开(公告)号：KR1020120073915A
公开(公告)日：2012-07-05
申请号：KR1020100135841
申请日：2010-12-27
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 이규창 , 박준표 , 김명균 , 이병필 , 김종호 , 석성호 , 김성욱
IPC分类号： C01B33/037 , C30B29/06 , H01L31/04
CPC分类号： Y02E10/50 , C01B33/037 , C01P2006/80 , H01L31/04
摘要： PURPOSE: A method for refining silicon using gas blowing and a method for manufacturing solar light level silicon using the same are provided to refine silicon based on the gas blowing and to eliminate impurities from molten silicon based on chemical reactions. CONSTITUTION: A method for refining silicon using gas blowing includes the following: silicon is heated in a chamber(S2); the temperature of silicon molten in the chamber is measured(S3); if the temperature of the silicon molten is reached to a set temperature, refining gas is introduced into the silicon molten(S4, S5); and slag floated on the upper layer of the silicon molten is eliminated by the chemical reaction of the refining gas and the slag(S6). The set temperature is in a range between 1600 and 1800 degrees Celsius. The refining gas includes at least one of H_2O, H_2, and Ar.
摘要翻译：目的：提供一种使用气体吹制来提炼硅的方法以及使用该方法制造太阳光级硅的方法，用于根据气体吹送来精制硅，并且基于化学反应从熔融硅中除去杂质。构成：使用气体吹炼来提炼硅的方法包括以下步骤：在室内加热硅（S2）; 测量室内熔融的硅的温度（S3）; 如果硅熔体的温度达到设定温度，则将精炼气体引入硅熔液中（S4，S5）; 并且通过精炼气体和炉渣的化学反应而消除漂浮在硅熔融物上层的渣（S6）。设定温度在1600至1800摄氏度之间。精炼气体包括H_2O，H_2和Ar中的至少一种。

47. 发明公开

KR1020120065468A 실리콘 정련 장치 및 그 방법 有权
标题翻译：用于精制硅的装置及其方法
公开(公告)号：KR1020120065468A
公开(公告)日：2012-06-21
申请号：KR1020100126616
申请日：2010-12-13
申请人： 주식회사 포스코 , 재단법인 포항산업과학연구원
发明人： 이병필 , 이규창 , 박준표 , 김명균 , 김성욱 , 김종호 , 석성호
IPC分类号： C01B33/037 , B01D11/02 , B01D43/00
CPC分类号： C01B33/037 , B01D21/009 , B01D21/262 , B01D43/00
摘要： PURPOSE: An apparatus for refining silicon and a method for the same are provided to eliminate metallic impurities from silicon by implementing acid treatment. CONSTITUTION: An apparatus(100) for refining silicon includes a reaction bath(120), a solid-liquid separating part(130), and a harmful gas treating part(140). The reaction bath eliminates impurities from silicon powder by reacting silicon powder and an acid solution. The solid-liquid separating part is in connection with the reaction bath. A mixture of the silicon powder and the acid solution is fed from the reaction part. The solid-liquid separating part separates solid silicon of high purity and liquid waste through a centrifugal separation. The harmful gas treating part treats and discharges harmful gas from the reaction bath and the solid-liquid separating part.
摘要翻译：目的：提供一种用于精制硅的设备及其方法，以通过实施酸处理从硅中消除金属杂质。构成：用于精制硅的装置（100）包括反应槽（120），固液分离部分（130）和有害气体处理部分（140）。反应浴通过硅粉和酸溶液反应来消除硅粉中的杂质。固液分离部分与反应槽相连。将硅粉和酸溶液的混合物从反应部分进料。固液分离部分通过离心分离分离高纯度固体硅和废液。有害气体处理部件从反应槽和固液分离部分处理和排出有害气体。

48. 发明授权

KR102073832B1 커피박을 활용한 직접환원철 제조용 펠렛 및 이를 이용한 직접환원철 제조방법 有权
公开(公告)号：KR102073832B1
公开(公告)日：2020-02-05
申请号：KR1020170174542
申请日：2017-12-18
申请人： 재단법인 포항산업과학연구원
发明人： 이병필 , 장승규
IPC分类号： C21B13/00 , C22B1/24

49. 发明授权

KR101667955B1 스칸디움의 농축 방법 有权
标题翻译：浓缩SCANDIUM的方法
公开(公告)号：KR101667955B1
公开(公告)日：2016-10-20
申请号：KR1020150181029
申请日：2015-12-17
申请人： 재단법인 포항산업과학연구원
发明人： 이병필 , 이창규 , 김병원 , 장승규
IPC分类号： C22B59/00 , C22B7/00
摘要： 스칸디움의농축방법에관한것으로, 스칸디움(Sc)을포함하는슬러리에침출제를투입하여침출액을준비하는단계; 침출액에나트륨염을투입하여상기침출액내의철(Fe)을제거하는단계; 및침출액에중화제를투입하여스칸디움농축물을수득하는단계를포함하는스칸디움의농축방법을제공한다.

50. 发明公开

KR1020120127048A 주형과 주조품의 분리 방법 无效
标题翻译： METHDO用于分离模具和铸件
公开(公告)号：KR1020120127048A
公开(公告)日：2012-11-21
申请号：KR1020110045271
申请日：2011-05-13
申请人： 재단법인 포항산업과학연구원
发明人： 이병필 , 김명균
IPC分类号： B22D29/04 , B22D29/00
摘要： PURPOSE: A method for separating a mold and a cast product is provided to effectively remove a cast material from a cast product using a basic or acidic aqueous solution and ultrasonic waves, and to prevent damage to the surface of the cast product. CONSTITUTION: A method for separating a mold and a cast product comprises the steps of: preparing a mold including a cast product(S10), physically separating the mold from the cast product by a sand blast or a water jet(S20), and putting the cast product in a chamber filled with a basic or acidic aqueous solution and removing cast materials remaining on the mold(S30). [Reference numerals] (S10) Step of preparing a mold including a cast product; (S20) Step of physically separating the mold; (S30) Step of removing remaining cast materials from the mold surface using basic or acidic aqueous solution
摘要翻译：目的：提供一种分离模具和铸造产品的方法，以使用碱性或酸性水溶液和超声波有效地从铸造产品中除去铸造材料，并且防止对铸造产品的表面的损坏。构成：分离模具和铸造产品的方法包括以下步骤：制备包括铸造产品的模具（S10），通过喷砂或喷水将模具与铸造产品物理分离（S20），并将铸造产品在填充有碱性或酸性水溶液的室中，并除去留在模具上的铸造材料（S30）。（附图标记）（S10）制备包括铸造产品的模具的步骤; （S20）物理分离模具的步骤; （S30）使用碱性或酸性水溶液从模具表面除去剩余的铸造材料的步骤

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