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    • 38. 发明公开
    • 의료용 액체 세정제 조성물
    • 液体洗涤剂组合物
    • KR1020080045144A
    • 2008-05-22
    • KR1020087004046
    • 2006-09-14
    • 라이온 가부시키가이샤
    • 오누키이즈미타치카와토시히코오노메구무오카모토타카히로카타기테츠야
    • C11D17/08C11D1/72C11D1/75
    • C11D3/3418C11D1/44C11D1/62C11D1/72C11D1/835C11D1/94
    • Disclosed is a liquid detergent composition for clothes characterized by containing (A) polyoxyethylene alkyl ether, (B) a compound represented by the general formula (I) below, (C) a semipolar surface active agent, an amphoteric surface active agent or a compound represented by the general formula (II) or (III) below, and (D) 1-hydroxyethane-1,1-diphosphonic acid or a salt thereof. (I) (In the formula (I), X, Y and Z respectively represent a hydrogen atom, CnH2n+1 or (CH3)2CH (wherein n is an integer of 1-3); and M represents a hydrogen atom, an alkali metal atom, an alkaline earth metal atom, NH4+ or an alkanolamine.) (II) (III) (In the formulae (II) and (III), R11, R12 and R13 respectively represent an alkyl group, an alkenyl group, a straight chain hydroxyalkyl group, a tolyl group, a phenyl group or a benzyl group; EO represents an ethylene oxide group; a and b respectively represent a number not less than 0 and a + b is not less than 10; and X- represents an anion.)
    • 公开了一种用于衣服的液体洗涤剂组合物,其特征在于含有(A)聚氧乙烯烷基醚,(B)下述通式(I)表示的化合物,(C)半极性表面活性剂,两性表面活性剂或化合物 由下述通式(II)或(III)表示,和(D)1-羟基乙烷-1,1-二膦酸或其盐。 (I)(式(I)中,X,Y,Z分别表示氢原子,C n H 2n + 1或(CH 3)2 CH(n为1-3的整数),M表示氢原子, 碱金属原子,碱土金属原子,NH 4 +或链烷醇胺)(II)(III)(式(II)和(III))中,R 11,R 12和R 13分别表示烷基,烯基, 直链羟烷基,甲苯基,苯基或苄基; EO表示环氧乙烷基; a和b分别表示不小于0且a + b不小于10的数; X表示 阴离子。)
    • 40. 发明公开
    • 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법
    • 半导体器件的制造方法使用渗透层析工艺
    • KR1020080009939A
    • 2008-01-30
    • KR1020060069758
    • 2006-07-25
    • 에스케이하이닉스 주식회사
    • 김태환
    • H01L21/027
    • G03F7/70341C11D1/72C11D1/721G03F7/2041H01L21/67028
    • A method for manufacturing a semiconductor device using an immersion lithography process is provided to obtain vertical patterns by improving the top loss of a photoresist pattern by neutralizing acid existing on a surface of a resist layer. A method for manufacturing a semiconductor device using an immersion lithography process includes the steps of: forming the resist film on an etched layer of a semiconductor wafer; coating an aqueous solution including a basic compound and a non-ionic surfactant on a surface of the resist film; performing an exposing process by using immersion lithography equipment; baking the product of third step after exposure; and obtaining a desired pattern by developing the product of the fourth step.
    • 提供了使用浸没式光刻工艺制造半导体器件的方法,以通过中和存在于抗蚀剂层表面上的酸来改善光致抗蚀剂图案的最大损耗来获得垂直图案。 使用浸没式光刻工艺制造半导体器件的方法包括以下步骤:在半导体晶片的蚀刻层上形成抗蚀剂膜; 在抗蚀剂膜的表面上涂布包含碱性化合物和非离子表面活性剂的水溶液; 通过使用浸没式光刻设备进行曝光处理; 暴露后烘烤第三步的产品; 并通过开发第四步骤的产物来获得所需的图案。