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    • 32. 发明公开
    • 프로톤 주게와 프로톤 받게를 갖는 다면체 올리고머형 실세스퀴옥산을 포함하는 탄화수소계 나노 복합막 및 이의 제조방법
    • 包含聚合低聚硅烷氧基硅烷的磺化烃纳米复合膜与原子共轭体和原子接收体及其制备方法
    • KR1020160110578A
    • 2016-09-22
    • KR1020150032309
    • 2015-03-09
    • 서강대학교산학협력단
    • 이희우김상우윤태웅
    • H01M8/10
    • H01M8/1048H01M8/1037H01M2008/1095H01M2300/0082
    • 본발명은프로톤주게(proton donor)를갖는폴리헤드럴올리고메릭실세스퀴옥산(POSS)과프로톤받게(proton acceptor)를갖는폴리헤드럴올리고메릭실세스퀴옥산(POSS)이술폰기를갖는방향족탄화수소고분자막에도입된양성자전도성나노복합막및 이의제조방법에관한것이다. 본발명의나노복합막에는양성자주게를갖는 POSS와양성자받게를갖는 POSS가함께첨가되어있어발생된양성자(양이온)가이온채널내에서수소결합을통해쉽게호핑(hopping)되어이온전도도가증가된다. 또한, 본발명에사용된 POSS는그 크기가매우작아고분자막내 이온채널에서양성자의이동을거의방해하지않으므로우수한양성자전도도를구현할수 있다. 또한, 본발명에의한양성자전도성나노복합막은고분자막의술폰화도를높였음에도불구하고우수한기계적강도를보여준다.
    • 本发明涉及质子传导纳米复合膜,其中具有质子供体的多面体低聚倍半硅氧烷(POSS)和具有质子受体的POSS引入到磺化芳族烃聚合物膜中,并且还涉及一种制备 相同。 将具有质子供体的POSS和具有质子受体的POSS添加到本发明的纳米复合膜中,因此通过离子通道内的氢键容易地跳跃产生的质子(正离子),从而增加离子传导性。 此外,本发明中使用的POSS的尺寸相当小,因此POSS很少阻碍聚合物膜内的离子通道中的质子的移动,从而实现期望的质子传导性。 此外,尽管聚合物膜的磺化度增加,但是本发明的质子传导性纳米复合膜显示出期望的机械强度。
    • 33. 发明公开
    • 술폰산기를 포함하는 다면체 올리고머형 실세스퀴옥산을 포함하는 나노 복합막 및 이의 제조방법
    • 包含具有磺酸基的多元醇低聚硅氧烷的磺化纳米复合膜及其制备方法
    • KR1020160006819A
    • 2016-01-20
    • KR1020140085839
    • 2014-07-09
    • 서강대학교산학협력단
    • 이희우김상우윤태웅
    • H01B1/12H01B5/14C07F7/21
    • H01M8/1051B01J39/19C08J5/2256C08J5/2275C08J2371/10C08J2381/06H01B1/12H01M8/1025H01M8/1048H01M8/1069H01M2008/1095H01M2300/0068H01M2300/0082H01M2300/0091Y02P70/56H01M8/00C07F7/21H01B5/14
    • 본발명은우수한양성자전도성및 기계적강도를나타내는실세스퀴옥산이도입된술폰화된폴리에테르에테르케톤(sulfonated polyetheretherketone (sPEEK)), 술폰화된폴리에테르케톤(sulfonated polyetherketone (sPEK)), 술폰화된폴리에테르술폰(sulfonated polyethersulfone (sPES)) 또는술폰화된폴리아릴렌에테르술폰(sulfonated polyarylethersulfone (sPAES))를포함하는술폰화된탄화수소계나노복합막및 이의제조방법에관한것이다. 본발명의나노복합막은필러로사용되는 POSS에양성자소스인다수의술폰산기가있어우수한전도성을가진다. 또한, 본발명에사용된 POSS는그 크기가매우작아고분자막내 이온채널에서양성자의이동을거의방해하지않으므로우수한양성자전도도를구현할수 있다. 또한, 본발명에의한양성자전도성나노복합막은폴리에테르에테르케톤(sulfonated polyetheretherketone (sPEEK)), sPEK, sPES 및 sPAES를포함하는탄화수소계고분자내 술폰화된 POSS를도입함으로서인장강도, 항복강도및 신율이동시에증가하고, 그값들이최대치를나타내는함량이존재한다.
    • 本发明涉及具有磺化聚醚醚酮(sPEEK),磺化聚醚酮(sPEK),磺化聚醚砜(sPES)或磺化聚芳醚砜(sPAES)的磺化烃纳米复合膜,其中引入具有改善的质子传导性和机械强度的倍半硅氧烷, 制备磺化烃纳米复合膜。 根据本发明的纳米复合膜在多面体低聚倍半硅氧烷(POSS)中具有多个作为质子源的磺酸基,其用作纳米复合膜的填料,从而提高导电性。 此外,由于根据本发明的POSS太小,并且很少防止质子在聚合物膜内的离子通道中移动,因此可以改善质子传导性。 此外,由于本发明的质子传导性纳米复合膜将磺化POSS引入到包含sPEED,sPEK,sPES和sPAES的烃聚合物中,可以同时提高拉伸强度,屈服强度和延展性, 纳米复合膜中的含量比例使上述性能最大化。
    • 37. 发明公开
    • 인산기를 가지는 실세스퀴옥산을 이용한 양성자 전도성 고분자 나노복합막
    • 通过使用具有磷酸基团的聚酯低聚硅氧烷共聚物导电聚合物电解质的纳米复合膜
    • KR1020130118081A
    • 2013-10-29
    • KR1020120040985
    • 2012-04-19
    • 서강대학교산학협력단
    • 이희우길이진
    • H01B1/12H01B5/14C07F9/28C08K5/49
    • PURPOSE: A proton-conducting polymer nanocomposite film has excellent proton conductivity even in a high temperature and non-humidified condition and has excellent mechanical strength superior than conventional PEMFC fluorine-based polymer film. CONSTITUTION: A proton-conducting polymer nanocomposite film is that a phosphate group-introduced silsesquioxane is mixed to a proton-conducting polymer substrate. A manufacturing method of the proton-conducting polymer nanocomposite film comprises a step of dissolving a fluorine-based proton-conducting polymer substrate into a solvent; a step of dissolving a sulfonate-introduced silsesquioxane into a solvent; a step of mixing the fluorine-based polymer substrate solution and the silsesquioxane solution; a step of ultrasonic waves-treating the mixed solution and dispersing silsesquioxane in the fluorine-based polymer; and a step of carrying out a casting in a vacuum oven and removing residues. [Reference numerals] (AA) Example 2; (BB) Example 1; (CC) Comparative example
    • 目的:质子传导聚合物纳米复合膜即使在高温和非加湿条件下也具有优异的质子传导性,并且具有优于常规PEMFC氟基聚合物膜的优异的机械强度。 构成:质子传导性聚合物纳米复合膜是将导入磷酸基的倍半硅氧烷与质子传导性聚合物基材混合。 质子传导性聚合物纳米复合膜的制造方法包括将氟系质子传导性聚合物基材溶解在溶剂中的工序; 将磺化物引入的倍半硅氧烷溶解在溶剂中的步骤; 将氟基聚合物基材溶液与倍半硅氧烷溶液混合的工序; 超声波处理混合溶液并将倍半硅氧烷分散在氟基聚合物中的步骤; 以及在真空烘箱中进行铸造并除去残留物的步骤。 (附图标记)(AA)实施例2 (BB)实施例1; (CC)比较例
    • 38. 发明公开
    • 초저유전막의 제조방법
    • 制备超导介电膜的方法
    • KR1020120080157A
    • 2012-07-16
    • KR1020120068365
    • 2012-06-26
    • 서강대학교산학협력단
    • 이희우최현상민성규김범석신보라
    • H01B3/18H01B3/02C09D183/00
    • C09D183/04C08G77/045H01B3/00H01B3/46Y10T428/249953Y10T428/31663C08K5/5419
    • PURPOSE: A manufacturing method of ultra-low dielectric membrane is provided to impart mechanical strength required for low dielectric membrane, and to provide extremely low dielectric constant, and to be used as an inter-layer insulative film for a semiconductor. CONSTITUTION: A manufacturing method of ultra-low dielectric membrane is manufactured by heat curing using an organic or inorganic matrix, and a reactive pore-former. The ultra-low dielectric membrane is manufactured by irradiation with UV rays of 200-300 nm at 400-450 °C for 5-30 minutes conducted with the heat curing at the same time. The matrix consists of 10-90 vol% of polymethylsilsesquioxane precursor or a copolymer thereof, and 10-90 vol% of a pore forming template in chemical formula 1: R1OCH2[CH(OR2)]nCH2OR3. In chemical formula 1, R1, R2, and R3 is respectively hydrogen, or A. A is R4Si(OR5)3, R4 and R5 is respectively a C1-5 alkyl group, and n is an integer from 2-4.
    • 目的:提供超低介电膜的制造方法,以赋予低介电膜所需的机械强度,并提供极低的介电常数,并用作半导体的层间绝缘膜。 构成:通过使用有机或无机基体和反应性成孔剂进行热固化来制造超低介电膜的制造方法。 超低介电膜通过在400-450℃的紫外线照射5-30分钟同时进行热固化来制造。 该基质由10-90体积%的聚甲基倍半硅氧烷前体或其共聚物和10-90体积%的化学式1中的成孔模板:R1OCH2 [CH(OR2)] nCH2OR3组成。 在化学式1中,R 1,R 2和R 3分别为氢或A。A为R 4 Si(OR 5)3,R 4和R 5分别为C 1-5烷基,n为2-4的整数。