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31. 发明公开

KR1020050004763A 결정화 장치 및 결정화 방법 및 위상 시프트마스크 无效
标题翻译：结晶装置和结晶方法以及相移掩模
公开(公告)号：KR1020050004763A
公开(公告)日：2005-01-12
申请号：KR1020047000967
申请日：2003-03-19
申请人： 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
发明人： 다니구치유키오 , 마츠무라마사키요 , 기무라요시노부
IPC分类号： G03F9/00
CPC分类号： H01L21/02686 , B23K26/066 , B23K2201/40 , H01L21/02532 , H01L21/02678
摘要： 레이저장치(1)의 끝에 빔 익스펜더(2), 호모지나이저(3), 미러(4)를 통해서 위상 시프트마스크(5)를 배치하고, 결상 광학계(6)를 사이에 넣어 위상 시프트마스크(5)의 대향면에 피처리기판(7)을 설치한다. 피처리기판(7)은 진공 척이나 정전 척 등의 기판 척(8)을 이용하여 소정의 위치에 유지한다.

32. 发明公开

KR1020040105623A 반도체 박막의 결정화방법 및 결정화장치, 반도체장치 및제조방법, 표시장치, 및 위상 시프터 无效
标题翻译：用于将半导体层结晶到半导体层上的所需表面取向晶粒的方法和装置，半导体器件，其制造方法，显示器件和相位移器
公开(公告)号：KR1020040105623A
公开(公告)日：2004-12-16
申请号：KR1020040042049
申请日：2004-06-09
申请人： 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
发明人： 기무라요시노부 , 마츠무라마사키요 , 쥬몬지마사유키 , 히라마츠마사토 , 오가와히로유키 , 가와카미히데아키 , 타니구치유키오 , 아베히로유키 , 야마모토요시타카
IPC分类号： H01L21/20
CPC分类号： H01L21/02356 , H01L21/02354
摘要： PURPOSE: A method and an apparatus for crystallizing a semiconductor layer, a semiconductor device, a fabricating method thereof, a display device, and a phase shifter are provided to form a single crystal region of a desired surface orientation on an entire surface or a selected surface irrespective to a large-area amorphous semiconductor layer. CONSTITUTION: A semiconductor layer is formed on one side of a substrate(301). The semiconductor layer includes a crystallization region. A surface of the crystallization region is formed with a grain of a rectangular shape. A crystal orientation of a section perpendicular to the crystallization region is (001) plane . A current direction within the crystal region flows in the (001) plane to operate a semiconductor device.
摘要翻译：目的：提供一种用于使半导体层结晶的方法和装置，半导体器件，其制造方法，显示装置和移相器，以在整个表面或所选择的表面上形成期望的表面取向的单晶区域无论大面积非晶半导体层如何。构成：半导体层形成在基板（301）的一侧。半导体层包括结晶区域。结晶区域的表面形成为具有矩形形状的颗粒。垂直于结晶区域的截面的晶体取向为（001）面。晶体区域内的电流方向在（001）面内流动以操作半导体器件。

33. 发明公开

KR1020040084787A 반도체막의 결정화 방법 및 장치 无效
标题翻译：用于将半导体层结晶形成具有大直径的晶体结构的半导体层的装置和方法
公开(公告)号：KR1020040084787A
公开(公告)日：2004-10-06
申请号：KR1020040020105
申请日：2004-03-24
申请人： 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
发明人： 다니구치유키오 , 마츠무라마사키요
IPC分类号： H01L21/268
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/073 , G02B27/0927 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/66757
摘要： PURPOSE: An apparatus for crystallizing a semiconductor layer is provided to form a semiconductor layer having a crystal structure with a great diameter by laterally growing a crystal from a crystal nucleus without substantially generating ablation. CONSTITUTION: Light with a predetermined intensity distribution is irradiated to at least one of a polycrystalline semiconductor layer or an amorphous semiconductor layer to form a crystalline semiconductor layer. An irradiation system irradiates light having a light intensity distribution of a reverse peak pattern in which a light intensity increases as it goes from a reverse peak having a smallest light intensity toward the periphery to either one of the polycrystalline semiconductor layer or the amorphous semiconductor layer. When the maximum value of light intensity in the light intensity distribution of the reverse peak pattern is standardized to 1, an alpha value(standardized) as a light intensity of the reverse peak is 0.2
摘要翻译：目的：提供一种用于结晶半导体层的装置，以通过从晶核横向生长晶体而形成具有大直径的晶体结构的半导体层，而基本上不产生烧蚀。构成：将具有预定强度分布的光照射到多晶半导体层或非晶半导体层中的至少一个以形成结晶半导体层。照射系统从具有最小光强度的反向峰值朝向多晶半导体层或非晶半导体层中的任一个照射具有光强度增加的反向峰值图案的光强度分布的光。当反向峰图案的光强度分布中的光强度的最大值被标准化为1时，作为反向峰值的光强度的α值（标准化）为0.2 <α值<= 0.8。

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