会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明公开
    • 압전 박막 공진자
    • 压电薄膜共振器
    • KR1020080064842A
    • 2008-07-09
    • KR1020087009701
    • 2006-02-09
    • 가부시키가이샤 무라타 세이사쿠쇼
    • 우메다케이이치카와무라히데키
    • H03H9/24
    • H03H9/02086H03H9/02157H03H9/173H03H9/175H03H9/584H03H9/587
    • A piezoelectric thin film resonator in which spurious of short wavelength can be suppressed. In a part of a thin film portion supported partially on a substrate (12) while isolated acoustically therefrom, a) an oscillatory portion (24) consisting of a pair of electrodes (14, 18) superposed in plan view while sandwiching a piezoelectric film (16), and b) an extra film (20) provided on the piezoelectric film (16) or the electrode (18) at least along a portion of the outer circumference of the oscillatory portion (24) are included. Assuming the acoustic impedance of the extra film (20) defined by the root of product of density and Young's modulus is x(MN sec/m3), product of the density and thickness of the extra film (20) is A, product of the density and thickness of the electrodes (14, 18) is B, and y=A/B, following relations are satisfied; (i) for 9.0
    • 可以抑制短波长寄生的压电薄膜谐振器。 在薄膜部分部分地部分地支撑在衬底(12)上,同时隔离其中的薄膜部分的一部分中,a)由平面图叠加的一对电极(14,18)组成的振荡部分(24),同时夹着压电薄膜 16),以及b)至少沿振荡部分(24)的外圆周的一部分设置在压电薄膜(16)或电极(18)上的额外的薄膜(20)。 假设由密度积和杨氏模量的根值定义的额外的膜(20)的声阻抗为x(MN sec / m3),额外膜(20)的密度和厚度乘积为A, 电极(14,18)的密度和厚度为B,y = A / B,满足关系; (i)对于9.0 <= x <44.0,0.0092.x + 0.88 <= y <0.067.x + 0.60(1a)和(ii)对于44.0 <= x <79.0,-0.0035.x + 1.45 <= y <0.015.x + 2.9(1b)。
    • 23. 发明公开
    • 필름 벌크 탄성파 공진기 및 그 제조 방법
    • 电影大容量声学谐振器及其制作方法
    • KR1020040057089A
    • 2004-07-02
    • KR1020020083537
    • 2002-12-24
    • 주식회사 한국전자홀딩스
    • 이광진안순홍
    • H03H3/08
    • H03H3/08H03H3/02H03H9/175H03H9/706H03H9/725
    • PURPOSE: A film bulk acoustic resonator and a fabricating method thereof are provided to reduce the target cost by using an aluminum target in a process for forming a bottom electrode and a top electrode. CONSTITUTION: A film bulk acoustic resonator includes a semiconductor substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The semiconductor substrate(110) is formed with a shape of plate. The bottom electrode(130) is deposited on an upper surface of the semiconductor substrate. The bottom electrode is formed with aluminum. The piezoelectric layer(140) is formed by depositing aluminum nitride on an upper surface of the bottom electrode. The top electrode(150) is formed by depositing aluminum deposited on an upper surface of the piezoelectric layer.
    • 目的:提供一种薄膜体声波谐振器及其制造方法,用于在形成底部电极和顶部电极的工艺中使用铝靶来降低目标成本。 构成:薄膜体声波谐振器包括半导体衬底,底电极,压电层和顶电极。 半导体衬底(110)形成为板状。 底部电极(130)沉积在半导体衬底的上表面上。 底部电极由铝形成。 压电层(140)通过在底部电极的上表面上沉积氮化铝而形成。 顶部电极(150)通过沉积沉积在压电层的上表面上的铝形成。
    • 25. 发明公开
    • 주파수 트리밍 코일을 갖는 벌크 음파 공진기 및 필터
    • 具有频率时间线圈的大容量声波谐波器和滤波器
    • KR1020010105733A
    • 2001-11-29
    • KR1020000026472
    • 2000-05-17
    • 삼성전자주식회사
    • 송인상김정우송기무
    • H03H9/54
    • H03H9/54H03H9/171H03H9/175H03H9/564
    • The disclosed ring clamp has two half-shells (10, 20), each having a first extremity with a bearing pad (12, 22) extending outwards, as well as a second extremity equipped with one of the elements (14, 22) of the means of connection used to connect the two second extremities of the half- shells removably. The section of said half-shells is substantially U- shaped, with the branches of the 'U' extending towards the interior and having the capacity to operate in conjunction with the protruding support surfaces on the extremities of the two tubes. The clamp comprises a tightening screw (30), the post (32) of which traverses the pierced holes of the bearing pads (12, 22). The length (L) of the post is at least substantially equal to the radius (R) of the ring clamp when closed, and said post is inserted loosely into the holes of the bearing pads. The elements (14, 24) of said means of connection are designed to unite in order to bring together the second half-shell extremities, or to separate in order to maintain said extremities apart while the post of the screw remains in place in the holes of the bearing pads.
    • 所公开的环形夹具具有两个半壳(10,20),每个具有第一末端,其具有向外延伸的轴瓦(12,22),以及配备有元件(14,22)之一的第二末端 用于连接半壳的两个第二末端的连接装置可拆卸。 所述半壳的部分基本上为U形,其中U形分支向内部延伸,并具有与两根管的末端上的突出的支撑表面一起操作的能力。 所述夹具包括紧固螺钉(30),所述紧固螺钉(30)穿过所述轴承瓦块(12,22)的穿孔。 柱的长度(L)至少基本上等于闭合时环形夹具的半径(R),并且所述柱松动地插入轴承瓦的孔中。 所述连接装置的元件(14,24)被设计成联合在一起以将第二半壳末端组合在一起,或者为了保持所述末端分开而分离,同时螺钉的柱保持在孔中 的轴瓦。
    • 30. 发明公开
    • 박막 벌크 음향 공진기 및 박막 벌크 음향 공진기의 제조방법
    • 电影大容量声学谐振器及其制作方法
    • KR1020130044905A
    • 2013-05-03
    • KR1020110109254
    • 2011-10-25
    • 삼성전자주식회사
    • 이문철송인상김덕환김철수손상욱신제식박호수추이징
    • H03H9/17H03H3/007
    • H03H9/173H01L41/297H01L41/312H01L41/332H03H3/02H03H9/175H03H2003/021
    • PURPOSE: A thin film bulk acoustic resonator and a manufacturing method thereof are provided to resolve the crystal property degradation problem of a piezoelectric layer caused by the existing inclined structure. CONSTITUTION: An acoustic resonator(110) includes a first electrode(111), a second electrode, and a piezoelectric layer(113). The piezoelectric layer is located between the first electrode and the second electrode and generates acoustic waves according to the signal applied between the electrodes. An air gap(120) is located in the lower part of the acoustic resonator and reflects the acoustic waves. Anchors(131,133) are located in both sides of the air gap and is formed by the same process. Valleys(141,143) have the air gap; and a gap smaller than the air gap in the boundary surface. An engraving checking layer(160) is located in the upper side of a substrate and interrupts the etching of the substrate when generating the air gap. A membrane(170) is located in the upper part of the air gap, the anchor, and the upper part of the valley.
    • 目的:提供一种薄膜体声波谐振器及其制造方法,以解决由现有的倾斜结构引起的压电层的晶体性质退化问题。 构成:声谐振器(110)包括第一电极(111),第二电极和压电层(113)。 压电层位于第一电极和第二电极之间,并根据施加在电极之间的信号产生声波。 气隙(120)位于声谐振器的下部并反射声波。 锚杆(131,133)位于气隙的两侧,由相同的过程形成。 山谷(141,143)有气隙; 以及比边界面中的气隙小的间隙。 雕刻检查层(160)位于基板的上侧,并且在产生气隙时中断基板的蚀刻。 膜(170)位于气隙的上部,锚固体和谷的上部。