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21. 发明公开

KR1020120069418A 절연형 게이트 바이폴라 트랜지스터 有权
标题翻译：绝缘栅双极晶体管及其制造方法
公开(公告)号：KR1020120069418A
公开(公告)日：2012-06-28
申请号：KR1020100130962
申请日：2010-12-20
申请人： 주식회사 케이이씨
发明人： 김원찬 , 송인혁 , 서동수
IPC分类号： H01L29/73
摘要： PURPOSE: An insulated gate bipolar transistor and a manufacturing method thereof are provided to increase a breakdown voltage by partially forming a carrier storage layer in an area which causes a conduction loss. CONSTITUTION: A first conductive well area(110) is formed in a first conductive drift layer(101). A second conductive well area(120) is formed in the first conductive well area. A first conductive emitter area(130) is formed in the second conductive well area. A gate insulation layer(140) is formed on the first conductive well area, the second conductive well area, and the surface of the first conductive drift layer. The second conductive well area is located outside the first conductive emitter area.
摘要翻译：目的：提供绝缘栅双极晶体管及其制造方法，以通过在导致导通损耗的区域中部分地形成载流子存储层来增加击穿电压。构成：第一导电阱区（110）形成在第一导电漂移层（101）中。第二导电阱区域（120）形成在第一导电阱区域中。第一导电发射极区域（130）形成在第二导电阱区域中。栅极绝缘层（140）形成在第一导电阱区域，第二导电阱区域和第一导电漂移层的表面上。第二导电阱区位于第一导电发射区的外侧。

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