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11. 发明公开

KR1020050035891A 박막 커패시터와 그 제조 방법 失效
标题翻译：薄膜电容器及其制造方法
公开(公告)号：KR1020050035891A
公开(公告)日：2005-04-19
申请号：KR1020057003132
申请日：2003-08-15
申请人： 후지쯔 가부시끼가이샤
发明人： 구리하라가즈아키 , 시오가다케시 , 바니키존데이비드
IPC分类号： H01L27/02 , H01L27/108
CPC分类号： H01G4/33 , H01L27/0629 , H01L27/0805 , H01L28/40
摘要： A thin film capacitor comprising a monocrystal high permittivity dielectric layer is disclosed. The thin film capacitor comprises a monocrystal silicon substrate, a monocrystal intermediate layer epitaxially grown on the monocrystal silicon substrate, a monocrystal lower electrode layer epitaxially grown on the monocrystal intermediate layer, a monocrystal high permittivity dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed over the monocrystal high permittivity dielectric layer, and a plurality of conductor bumps connected to the lower and upper electrode layers at a plurality of locations.
摘要翻译：公开了一种包括单晶高介电常数介电层的薄膜电容器。薄膜电容器包括单晶硅衬底，在单晶硅衬底上外延生长的单晶中间层，在单晶中间层外延生长的单晶下电极层，在下电极层上外延生长的单晶高介电常数介电层，形成在单晶高介电常数介电层上的上电极层，以及在多个位置连接到下电极层和上电极层的多个导体凸块。

12. 发明授权

KR100421506B1 반도체 장치 및 그 제조방법 失效
标题翻译： 반도체장치및그제조방법
公开(公告)号：KR100421506B1
公开(公告)日：2004-03-09
申请号：KR1020010062301
申请日：2001-10-10
申请人： 후지쯔 가부시끼가이샤
发明人： 마루야마겐지 , 구리하라가즈아키
IPC分类号： H01L27/105
CPC分类号： H01L28/56 , H01L28/60
摘要： A semiconductor device which comprises a first electrode 32, a ferroelectric film 36 formed above the first electrode, and a second electrode 40 formed above the ferroelectric film, further comprises intermediate layers 34, 38 formed at at least one of the boundary between the first electrode and the ferroelectric film, and the boundary between the ferroelectric film and the second electrode, such intermediate layer(s) having a perovskite crystal structure. Because such intermediate layers having perovskite crystal structure are formed between the first and/or second electrodes and the ferroelectric film, even when a base metal is used as a material for the bottom and/or top electrode of a ferroelectric capacitor, the ferroelectric film can have crystal structure exhibiting ferroelectricity. Base metals can be used as materials for the bottom and top electrodes of the ferroelectric capacitor to decrease the cost of semiconductor devices. Materials which it has been difficult to use for the bottom and top electrodes of a ferroelectric capacitor can now be used to simplify the fabrication processes and improve electric characteristics.
摘要翻译：包括第一电极32，形成在第一电极上方的铁电体膜36和形成在铁电体膜上方的第二电极40的半导体器件还包括形成在第一电极和第二电极之间的至少一个边界处的中间层34,38，和铁电薄膜以及铁电薄膜和第二电极之间的边界，这种中间层具有钙钛矿晶体结构。由于在第一和/或第二电极与强电介质膜之间形成具有钙钛矿型晶体结构的中间层，所以即使在使用贱金属作为强电介质电容器的下部和/或上部电极的材料的情况下，强电介质膜具有呈现铁电性的晶体结构。贱金属可以用作铁电电容器的底部电极和顶部电极的材料，以降低半导体器件的成本。现在可以使用难以用于铁电电容器的底部电极和顶部电极的材料来简化制造工艺并改善电特性。＆lt;图像＆GT;

13. 发明公开

KR1020030032799A 헤드 어셈블리 및 기록 매체 구동 장치 失效
标题翻译：头部组装和记录介质驱动器
公开(公告)号：KR1020030032799A
公开(公告)日：2003-04-26
申请号：KR1020020013494
申请日：2002-03-13
申请人： 후지쯔 가부시끼가이샤
发明人： 미타츠요시 , 히다마사하루 , 구리하라가즈아키
IPC分类号： G11B21/21
CPC分类号： G11B5/5552
摘要： PURPOSE: To provide a head assembly in which the frequency band of electric signals to be supplied to piezoelectric actuators is further expanded. CONSTITUTION: Piezoelectric actuators 28 and 29 are used to establish a reference attitude of a head slider 21 while a voltage is not being supplied. When the voltage is applied, the tip parts 28b and 29b of the actuators 28 and 29 are pulled toward base section tips 28a and 29a. Thus, the actuators 28 and 29 generate a couple which changes the attitude of the slider 21 from the reference attitude in only one direction about the center of rotation CR. The moment of inertia generated by the slider 21 during its rotational motion is suppressed to a lower level compared with the rocking motion of the slider by the principle of a pendulum. The natural frequency of a vibrating system that is constituted of the slider 21 and the actuators 28 and 29 can be increased. Therefore, the frequency of servo signals is secured in a wider frequency band.
摘要翻译：目的：提供一种头组件，其中将提供给压电致动器的电信号的频带进一步扩大。构成：压电致动器28和29用于在不提供电压的情况下建立磁头滑块21的参考姿态。当施加电压时，致动器28和29的尖端部分28b和29b被拉向基部尖端28a和29a。因此，致动器28和29产生一个将滑块21的姿态从关于旋转中心CR的仅一个方向的参考姿态改变的一对。滑块21在其旋转运动期间产生的惯性矩相对于滑块的摇摆运动通过摆锤的原理被抑制到较低的水平。可以增加由滑块21和致动器28和29构成的振动系统的固有频率。因此，伺服信号的频率被确保在较宽的频带内。

14. 发明公开

KR1020020064135A 용량 소자 및 그 제조 방법, 및 반도체 장치 有权
标题翻译：电容器元件及其制造方法和半导体器件
公开(公告)号：KR1020020064135A
公开(公告)日：2002-08-07
申请号：KR1020010062561
申请日：2001-10-11
申请人： 후지쯔 가부시끼가이샤
发明人： 구라사와마사키 , 구리하라가즈아키 , 마루야마겐지
IPC分类号： H01L27/108
CPC分类号： H01L28/55 , H01L28/91
摘要： PURPOSE: To provide a semiconductor device having a ferroelectric capacitor element with its direction of applied electric field and polarization axis being in parallel each other and a method of manufacturing the same. CONSTITUTION: A capacitor element comprises: a memory cell transistor formed on a semiconductor wafer 10 insulation films 22 and 30 covering over the memory cell transistor a buffer body 40 formed on the insulation film 30 a lower electrode 42 formed on the buffer body 40 and electrically connected to a source/ drain diffusion zone 20 a capacitor dielectric film 44 formed on the lower electrode 42, having thermal expansion coefficient smaller than that of the buffer body 40, and comprising perovskite ferroelectric material with its crystal oriented vertically in effect to the plane of the lower electrode 42 and an upper electrode 46 formed on the capacitor dielectric film 44.
摘要翻译：目的：提供一种其施加电场方向和偏振轴彼此平行的具有铁电电容器元件的半导体器件及其制造方法。构成：电容器元件包括：形成在半导体晶片上的存储单元晶体管10，覆盖存储单元晶体管的绝缘膜22和30，形成在绝缘膜30上的缓冲体40形成在缓冲体40上的下电极42，连接到源极/漏极扩散区域20，形成在下部电极42上的电容器电介质膜44，其热膨胀系数小于缓冲体40的热膨胀系数，并且包括钙钛矿铁电材料，其晶体取向垂直于下电极42和形成在电容器电介质膜44上的上电极46。

15. 发明公开

KR1020020060563A 반도체 장치 및 그 제조방법 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020020060563A
公开(公告)日：2002-07-18
申请号：KR1020010062301
申请日：2001-10-10
申请人： 후지쯔 가부시끼가이샤
发明人： 마루야마겐지 , 구리하라가즈아키
IPC分类号： H01L27/105
CPC分类号： H01L28/56 , H01L28/60
摘要： PURPOSE: To provide a semiconductor device for realizing low cost, along with its manufacturing method. CONSTITUTION: The semiconductor device includes a first electrode 32, a ferroelectric film 36 formed on the first electrode 32, and a second electrode 40 formed on the ferroelectric film 36. In this case, the semiconductor device includes middle layers 34 and 38 having a perovskite-based crystal structure and formed in at least one position between the first electrode 32 and the ferroelectric film 36 or between the ferroelectric film 36 and the second electrode 40.
摘要翻译：目的：提供一种实现低成本的半导体器件及其制造方法。构成：半导体器件包括第一电极32，形成在第一电极32上的铁电体膜36和形成在铁电体膜36上的第二电极40.在这种情况下，半导体器件包括具有钙钛矿的中间层34和38 并且形成在第一电极32和铁电体膜36之间或铁电体膜36和第二电极40之间的至少一个位置。

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