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    • 18. 发明公开
    • 백채널 식각 산화물 박막 트랜지스터 프로세스 아키텍처
    • 返回通道蚀刻氧化物薄膜晶体管工艺架构
    • KR1020140056091A
    • 2014-05-09
    • KR1020130130192
    • 2013-10-30
    • 애플 인크.
    • 헝,밍-친김,경욱후앙,천-야오박,영배창,시흐창종,존제트.
    • H01L29/786H01L21/336G02F1/1368
    • H01L29/7869H01L29/66969H01L29/78606H01L29/66742G02F1/1368H01L27/1225H01L27/1288H01L29/4908
    • Provided is a method for fabricating a back channel etching (BCE) oxide thin film transistor (TFT) for a liquid crystal display. The method comprises the steps of: forming a first metal layer having a first portion and a second portion over a substrate; depositing a gate insulator over the first metal layer; and disposing a semiconductor layer over the gate insulator. The method also includes a step of depositing a half-tone photoresist to cover a first portion of the semiconductor layer and the first portion of the first metal layer. The half-tone photoresist has a first portion and a second portion thicker than the first portion. The first portion has a via hole above the second portion of the first metal layer. The second portion of the half-tone photoresist covers the first portion of the first metal layer. The method further includes the steps of: etching a portion of the gate insulator through the via hole such that the second portion of the first metal layer is exposed; removing the first portion of the half-tone photoresist while remaining the second portion of the half-tone photoresist; and etching to remove a second portion of the semiconductor layer that is not covered by the half-tone photoresist.
    • 提供了一种制造用于液晶显示器的背沟道蚀刻(BCE)氧化物薄膜晶体管(TFT)的方法。 该方法包括以下步骤:在衬底上形成具有第一部分和第二部分的第一金属层; 在第一金属层上沉积栅极绝缘体; 以及在所述栅极绝缘体上方设置半导体层。 该方法还包括沉积半色调光致抗蚀剂以覆盖半导体层的第一部分和第一金属层的第一部分的步骤。 半色调光致抗蚀剂具有比第一部分厚的第一部分和第二部分。 第一部分在第一金属层的第二部分上方具有通孔。 半色调光刻胶的第二部分覆盖第一金属层的第一部分。 该方法还包括以下步骤:通过通孔蚀刻栅绝缘体的一部分,使第一金属层的第二部分露出; 在保留半色调光致抗蚀剂的第二部分的同时移除半色调光致抗蚀剂的第一部分; 并且蚀刻以除去未被半色调光致抗蚀剂覆盖的半导体层的第二部分。