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11. 发明公开

KR1020070055053A 표시 기판 无效
公开(公告)号：KR1020070055053A
公开(公告)日：2007-05-30
申请号：KR1020050113322
申请日：2005-11-25
申请人： 삼성전자주식회사
发明人： 김상갑 , 김시열 , 오민석 , 진홍기 , 최승하 , 정유광
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/136227 , G02F1/136286 , G02F2001/136295 , G02F2201/123
摘要： 표시 화면의 잔상을 개선하기 위한 표시 기판이 개시된다. 표시 기판은 제1 금속패턴으로 형성된 게이트 배선으로부터 연장된 게이트 전극과, 제2 금속패턴으로 형성된 소스 배선으로부터 연장된 소스 전극과, 제2 금속패턴으로 형성되고 소스 전극과 일정한 이격 거리를 갖는 드레인 전극과, 드레인 전극과 연결되어 드레인 전극과 화소 전극을 전기적으로 연결시키는 연결 패턴 및 연결 패턴의 하부에 형성되어 상기 연결 패턴을 커버하는 실딩 패턴을 포함한다. 실딩 패턴이 연결 패턴으로 조사되는 배면광을 차단시키므로 누설광 및 광 누설 전류의 발생이 감소된다. 이에 따라, 광 누설 전류로 인한 표시 화면의 잔상 발생을 개선할 수 있다.
광 누설 전류, 실딩 패턴, 4매 공정, 알루미늄 배선

12. 发明公开

KR1020070018291A 박막 트랜지스터 표시판 및 그의 제조 방법 无效
标题翻译：薄膜晶体管基板及其制造方法相同
公开(公告)号：KR1020070018291A
公开(公告)日：2007-02-14
申请号：KR1020050072812
申请日：2005-08-09
申请人： 삼성전자주식회사
发明人： 오민석 , 김상갑 , 진홍기 , 정유광
IPC分类号： G02F1/136
CPC分类号： H01L27/1248 , G02F1/136213 , G02F1/1368 , H01L27/1262
摘要： 플리커(flicker) 불량을 방지할 수 있는 박막 트랜지스터 표시판 및 그의 제조 방법이 제공된다. 박막 트랜지스터 표시판은 절연 기판 위에 형성되고 게이트 전극을 가지는 게이트선, 게이트선 위에 형성된 게이트 절연막, 게이트 절연막 위에 형성된 반도체층, 게이트선과 교차하고 반도체층과 중첩되는 소스 전극을 가지는 데이터선과, 게이트 전극을 중심으로 소스 전극과 대향하며 반도체층과 중첩하는 드레인 전극을 포함하는 데이터 배선으로서, 반도체층을 따라 형성된 데이터 배선, 드레인 전극과 연결되고 전단 게이트선과 적어도 일부가 중첩되어 스토리지 커패시터를 형성하는 화소 전극 및, 화소 전극 이외의 영역에 형성된 보호막을 포함하고, 스토리지 커패시터의 유전체는 게이트 절연막인 것을 특징으로 한다.
LCD, 3매 마스크(3 mask), 플리커(flicker) 불량, 슬릿 마스크(slit mask)

13. 发明公开

KR1020100062544A 박막 트랜지스터 기판의 제조 방법 无效
标题翻译：薄膜晶体管基板
公开(公告)号：KR1020100062544A
公开(公告)日：2010-06-10
申请号：KR1020080121228
申请日：2008-12-02
申请人： 삼성전자주식회사
发明人： 최승하 , 김상갑 , 신봉규 , 임상욱 , 주진호 , 양성훈 , 황보상우 , 최재호 , 이기엽 , 여윤종 , 최신일 , 양동주 , 진홍기 , 정유광
IPC分类号： G02F1/136 , H01L29/786
CPC分类号： H01L29/4908 , H01L27/1225 , H01L27/1248 , H01L29/458 , H01L29/7869 , H01L21/311 , H01L27/1214
摘要： PURPOSE: A thin film transistor substrate is provided to prevent the film characteristics of insulation and protection films from being lowered by adding a hydrogen gas to a deposition process. CONSTITUTION: A gate line is formed on an insulating substrate(10), and a gate insulating layer(30) is formed on the gate line. A data line is formed on the gate insulation film, and a protection film(60) is formed on the data line. A contact hole(65) is formed by etching at least one of the gate insulation film and the protection film.
摘要翻译：目的：提供薄膜晶体管基板，以通过向沉积工艺添加氢气来防止绝缘和保护膜的膜特性降低。构成：在绝缘基板（10）上形成栅极线，栅极线上形成有栅极绝缘层（30）。在栅极绝缘膜上形成数据线，在数据线上形成保护膜（60）。通过蚀刻栅极绝缘膜和保护膜中的至少一个来形成接触孔（65）。

14. 发明公开

KR1020070013817A 액정 표시 장치 및 이의 제조 방법 无效
标题翻译：液晶显示器及其制造方法
公开(公告)号：KR1020070013817A
公开(公告)日：2007-01-31
申请号：KR1020050068448
申请日：2005-07-27
申请人： 삼성전자주식회사
发明人： 정유광 , 김상갑 , 오민석 , 진홍기
IPC分类号： G02F1/136
CPC分类号： G02F1/136209 , G02F1/133512 , G02F1/13394 , G02F2001/13398
摘要： A liquid crystal display and a method for fabricating the same are provided to realize a liquid crystal display having protrusion patterns in uniform thickness while simplifying a process, and realize a wide viewing angle by making motility of liquid crystal molecules uniform. A first substrate(501) including thin film transistors formed at pixels and pixel electrodes connected with the thin film transistors is provided on a first insulation substrate(10). A second substrate(502) including color filters(230) formed corresponding to the pixels and a common electrode(250) formed on the color filters is provided to a second insulation substrate(210). A liquid crystal layer(503) is formed between the first substrate and the second substrate. Black matrix patterns(220) are formed on the second insulation substrate for substantially defining pixel areas. The color filters are formed on the pixel areas of the second insulation substrate. An overcoat layer(240) is formed to cover the black matrix patterns and the color filters. The common electrode is formed on the overcoat layer. A first photoresist layer(262) is applied on the common electrode. A second photoresist layer(272) having exposure sensitivity larger than the first photoresist layer is applied on the common electrode. The first and second photoresist layers are exposed and developed to form first protrusion patterns(261) formed of the first photoresist layer and multi-layered second protrusion patterns(282) formed of the first and second photoresist layers.
摘要翻译：提供一种液晶显示器及其制造方法以实现具有均匀厚度的突起图案的液晶显示器，同时简化了工艺，并且通过使液晶分子的运动性均匀而实现了广视角。在第一绝缘基板（10）上设置包括形成在像素处的薄膜晶体管和与薄膜晶体管连接的像素电极的第一基板（501）。在第二绝缘基板（210）上设置包括对应于像素形成的滤色器（230）和形成在滤色器上的公共电极（250）的第二基板（502）。在第一基板和第二基板之间形成液晶层（503）。黑色矩阵图案（220）形成在第二绝缘基板上，用于基本上限定像素区域。滤色器形成在第二绝缘基板的像素区域上。形成覆盖层（240）以覆盖黑矩阵图案和滤色器。公共电极形成在外涂层上。在公共电极上施加第一光致抗蚀剂层（262）。具有比第一光致抗蚀剂层大的曝光灵敏度的第二光致抗蚀剂层（272）施加在公共电极上。第一和第二光致抗蚀剂层被曝光和显影以形成由第一光致抗蚀剂层形成的第一突起图案（261）和由第一和第二光致抗蚀剂层形成的多层第二突起图案（282）。

15. 发明公开

KR1020070009329A 컨택홀 형성 방법 및 이를 이용한 박막 트랜지스터 기판의제조 방법 无效
标题翻译：形成接触孔的方法及其制造薄膜薄膜晶片的方法
公开(公告)号：KR1020070009329A
公开(公告)日：2007-01-18
申请号：KR1020050064490
申请日：2005-07-15
申请人： 삼성전자주식회사
发明人： 진홍기 , 김상갑 , 오민석 , 정유광
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , H01L21/31116 , H01L21/31138 , H01L21/76802
摘要： A contact hole forming method, and a manufacturing method of a thin film transistor substrate using the same are provided to improve a profile of a contact hole and prevent attacks on a metal line placed under an insulating layer by controlling an etch rate when the insulating layer deposited at a low temperature is etched. A substrate(1) including a metal line(2) containing Ag is prepared. An insulating layer(4) is formed on an entire surface of the substrate through a low-temperature process. A predetermined portion of the insulating layer is etched by a dry etching method using an anoxy gas including a fluorine-based gas and a nitrogen gas to expose the metal line.
摘要翻译：提供接触孔形成方法和使用其的薄膜晶体管基板的制造方法，以改善接触孔的轮廓，并通过控制绝缘层上的蚀刻速率来防止对位于绝缘层下方的金属线的侵袭在低温下沉积被蚀刻。制备包含含有Ag的金属线（2）的基板（1）。通过低温处理在基板的整个表面上形成绝缘层（4）。通过使用包括氟基气体和氮气的氧化气体的干法蚀刻方法来蚀刻绝缘层的预定部分以暴露金属线。

16. 发明公开

KR1020070001701A 박막 트랜지스터 기판 및 이의 제조방법 无效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：KR1020070001701A
公开(公告)日：2007-01-04
申请号：KR1020050057319
申请日：2005-06-29
申请人： 삼성전자주식회사
发明人： 김상갑 , 오민석 , 진홍기 , 정유광
IPC分类号： G02F1/136
CPC分类号： H01L27/1259 , G02F1/13439 , G02F1/136286 , H01L27/1218
摘要： A thin film transistor substrate and a method for manufacturing the same are provided to simplify a process by consecutively depositing a gate insulator film, a semiconductor layer, an ohmic contact layer, and a barrier layer by PECVD(Plasma Enhanced Chemical Vapor Deposition) when forming thin film transistors, thereby reducing the manufacturing cost of the thin film transistor substrate. Gate lines(22) have gate electrodes(26) on an insulation substrate. A gate insulator film is formed on the gate lines. An active layer and an ohmic contact layer are formed on the gate insulator film in order. Data lines(72) are formed on the ohmic contact layer, having source and drain electrodes(75,76). A passivation film is formed on the accumulated matters. Pixel electrodes(92) are electrically connected with the drain electrodes through contact holes(84) formed at the passivation film. Barrier patterns are formed between the ohmic contact layer and the data lines, having the same shape as the data lines except the source and drain electrodes, the ohmic contact layer, and the active layer.
摘要翻译：提供一种薄膜晶体管基板及其制造方法，以简化通过在形成时通过PECVD（等离子体增强化学气相沉积）连续沉积栅绝缘膜，半导体层，欧姆接触层和阻挡层的工艺薄膜晶体管，从而降低薄膜晶体管基板的制造成本。栅极线（22）在绝缘基板上具有栅电极（26）。栅极绝缘膜形成在栅极线上。依次在栅极绝缘体膜上形成有源层和欧姆接触层。数据线（72）形成在具有源极和漏极（75,76）的欧姆接触层上。在累积物上形成钝化膜。像素电极（92）通过形成在钝化膜上的接触孔（84）与漏电极电连接。在欧姆接触层和数据线之间形成阻挡图案，其具有与源极和漏极，欧姆接触层和有源层以外的数据线相同的形状。

17. 发明公开

KR1020070040145A 가요성 표시 장치용 표시판 및 그 제조 방법 无效
标题翻译：用于柔性显示装置的面板及其制造方法
公开(公告)号：KR1020070040145A
公开(公告)日：2007-04-16
申请号：KR1020050095525
申请日：2005-10-11
申请人： 삼성전자주식회사
发明人： 진홍기 , 김상갑 , 황태형 , 오민석 , 정유광 , 최승하
IPC分类号： G02F1/136
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1218 , H01L27/127 , H01L27/1288 , H01L29/06 , H01L29/66765 , H01L29/78603
摘要： A flexible display panel according to an embodiment of the present invention includes a flexible substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the substrate, a semiconductor layer formed on the gate insulating layer and disposed substantially on the entire gate electrode, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The patterning of the semiconductor layer to form a second semiconductor member may include coating a photoresist film on a first semiconductor member, exposing the photoresist film to light from a back of the substrate, wherein the gate electrode is used as a light blocking mask, developing the exposed photoresist film to form a photoresist pattern having the same planar size as the gate electrode, and etching the semiconductor layer using the photoresist pattern as an etching mask.

18. 发明公开

KR1020090080786A 어레이 기판의 제조 방법 및 어레이 기판 无效
标题翻译：制造阵列基板和阵列基板的方法
公开(公告)号：KR1020090080786A
公开(公告)日：2009-07-27
申请号：KR1020080006751
申请日：2008-01-22
申请人： 삼성전자주식회사
发明人： 김상갑 , 오민석 , 정유광 , 박홍식 , 김시열 , 김장수 , 최신일
IPC分类号： H01L29/786
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L21/02068 , H01L27/1214
摘要： A manufacturing method of an array substrate is provided to minimize damage to a fine pattern. A gate line(122) and a gate electrode(124) are formed on a base substrate(110). A source metal layer(150) is formed on the base substrate on which the gate line and the gate electrode are formed. A data line(155), a source electrode(157), and a drain electrode(158) are formed by etching the source metal layer. The data line intersects with the gate line. The source electrode is connected to the data line. The drain electrode is isolated from the source electrode. An additive gas is provided on the base substrate on which the drain electrode is formed. An etching component of an etching gas reacts to the source metal layer. A by-product formed on each side wall of the data line, the source electrode, and the drain electrode is removed. A pixel electrode is contacted with the drain electrode.
摘要翻译：提供阵列基板的制造方法以最小化对精细图案的损伤。栅基线（122）和栅电极（124）形成在基底（110）上。源极金属层（150）形成在其上形成有栅极线和栅电极的基底基板上。通过蚀刻源极金属层形成数据线（155），源极（157）和漏极（158）。数据线与栅极线相交。源电极连接到数据线。漏电极与源电极隔离。在形成有漏电极的基底基板上设置有添加气体。蚀刻气体的蚀刻成分与源极金属层反应。除去形成在数据线，源电极和漏电极的每个侧壁上的副产物。像素电极与漏电极接触。

19. 发明公开

KR1020090076046A 액정 표시 장치와 그 제조 방법 无效
标题翻译：液晶显示及其制作方法
公开(公告)号：KR1020090076046A
公开(公告)日：2009-07-13
申请号：KR1020080001784
申请日：2008-01-07
申请人： 삼성전자주식회사
发明人： 최승하 , 오민석 , 정유광 , 진홍기 , 최신일 , 김상갑 , 윤갑수 , 정두희
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F1/136213 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： A liquid crystal display and a manufacturing method thereof are provided to reduce line resistance of the liquid crystal display, thereby improving reliability. A gate electrode(122) is formed on an insulating substrate(110). An active layer(140) is formed on the gate electrode. An organic substance layer(150) is formed on the active layer. The organic substance layer comprises the first hole exposing a source area and the second hole exposing a drain area. A source electrode(192) is charged in the first hole. A drain electrode(194) is charged in the second hole.
摘要翻译：提供液晶显示器及其制造方法以降低液晶显示器的线路电阻，从而提高可靠性。在绝缘基板（110）上形成栅电极（122）。在栅电极上形成有源层（140）。在有源层上形成有机物质层（150）。有机物质层包括暴露源区域的第一孔和暴露漏极区域的第二孔。源电极（192）在第一孔中充电。漏电极（194）装入第二孔。

20. 发明公开

KR1020080022243A 표시 기판 및 이의 제조 방법 无效
标题翻译：显示基板及其制造方法
公开(公告)号：KR1020080022243A
公开(公告)日：2008-03-11
申请号：KR1020060085410
申请日：2006-09-06
申请人： 삼성전자주식회사
发明人： 진홍기 , 김상갑 , 김주한 , 오민석 , 정종현 , 정유광 , 최승하
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F2001/136231
摘要： A display substrate and a method for manufacturing the same are provided to execute a second etching process of an exposed passivation layer through hydrogen fluoride aqueous solution for improving undercut formation, thereby uniformly etching the passivation layer. A first metal pattern containing a gate wiring(GL) and a gate electrode of a thin film transistor is formed on a substrate(100). A first insulating layer is formed on the substrate. A second metal pattern containing a data wiring(DL) and a source and drain electrodes of the thin film transistor is formed on the first insulating layer. A second insulating layer is formed on the substrate having the second metal pattern. A photoresist pattern having first and second pattern parts is formed on the second insulating layer. The first and second insulating layers are etched to expose one end of the gate wiring using an etching process through the photoresist pattern. The second pattern part is etched to expose the second insulating layer. The second insulating layer is wet-etched by hydrogen fluoride aqueous solution. A transparent electrode layer is formed on the substrate where the first pattern part remains. The etching uniformity of the passivation layer is obtained.
摘要翻译：提供显示基板及其制造方法，以通过氟化氢水溶液执行暴露的钝化层的第二蚀刻工艺，以改善底切形成，从而均匀蚀刻钝化层。在基板（100）上形成包含薄膜晶体管的栅极布线（GL）和栅电极的第一金属图案。在基板上形成第一绝缘层。在第一绝缘层上形成包含数据布线（DL）的第二金属图案和薄膜晶体管的源极和漏极。在具有第二金属图案的基板上形成第二绝缘层。具有第一和第二图案部分的光致抗蚀剂图案形成在第二绝缘层上。蚀刻第一绝缘层和第二绝缘层，以通过光致抗蚀剂图案的蚀刻工艺露出栅极布线的一端。蚀刻第二图案部分以暴露第二绝缘层。用氟化氢水溶液湿法蚀刻第二绝缘层。在第一图案部分保留的基板上形成透明电极层。获得钝化层的蚀刻均匀性。

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