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11. 发明公开

KR1020090029102A 백라이트 유닛 및 그의 구동방법 无效
标题翻译：用于形成表面安装发光二极管器件的方法
公开(公告)号：KR1020090029102A
公开(公告)日：2009-03-20
申请号：KR1020070094377
申请日：2007-09-17
申请人： 삼성전자주식회사
发明人： 박정규 , 주성아 , 함헌주
IPC分类号： G02F1/133 , G02F1/13357
CPC分类号： G01J5/60 , G01J1/32 , G01J2001/4252
摘要： A backlight unit and a driving method thereof are provided to make a temperature when power is applied to the backlight unit by using a heating element the same as a temperature when the backlight unit becomes in a normal state, thereby minimizing deviation of color temperature. A white light emitting diode(110) generates light. An LED module(120) has a printed circuit board driven while supporting the which white light emitting diode. A heating element(130) is connected to the LED module. The white light emitting diode is at least one. The heating element is made of a heat line or a heat plate. The heating element is integrally or separably formed with the LED module. The heating element is made of a heating line. The heating element is integrally or separably formed with the LED module. The heating line is formed in the LED module of an area not contacted with the white light emitting diode. The heating element is made of a heating plate. The heating element is separably formed with the LED module.
摘要翻译：提供一种背光单元及其驱动方法，以使通过使用与背光单元变为正常状态时的温度相同的加热元件向背光单元施加电力时的温度，从而最小化色温的偏差。白色发光二极管（110）产生光。 LED模块（120）具有印刷电路板，同时支持白色发光二极管。加热元件（130）连接到LED模块。白色发光二极管是至少一个。加热元件由加热线或加热板制成。加热元件与LED模块一体地或可分离地形成。加热元件由加热线制成。加热元件与LED模块一体地或可分离地形成。加热线形成在与白色发光二极管未接触的区域的LED模块中。加热元件由加热板制成。加热元件与LED模块可分离地形成。

12. 发明授权

KR101629654B1 발광소자 패키지, 백라이트 유닛, 디스플레이 장치 및 조명장치 有权
标题翻译：发光装置包装背灯单元显示装置和照明装置
公开(公告)号：KR101629654B1
公开(公告)日：2016-06-13
申请号：KR1020090127737
申请日：2009-12-21
申请人： 삼성전자주식회사
发明人： 주성아 , 이효진 , 박일우 , 김경태
IPC分类号： H01L33/52 , H01L33/50 , H01L33/48
CPC分类号： H01L33/50 , H01L33/486 , H01L33/505 , H01L33/52 , H01L2224/48091 , H01L2224/48257 , H01L2224/8592 , H01L2924/3025 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： 본발명은칩 실장영역을제공하며제1 및제2 리드단자를구비한패키지본체와, 상기칩 실장영역에탑재되며, 상기제1 및제2 리드단자에전기적으로연결된 LED 칩과, 상기칩 실장영역에서상기 LED 칩의주위를따라형성된홈부와, 상기 LED 칩을둘러싸도록파장변환물질이함유된수지로형성되며상기홈부에의해정의되는외곽형상을갖는파장변환부를포함하는발광소자패키지를제공한다.

13. 发明授权

KR101521260B1 발광 다이오드 패키지 및 이의 제조방법 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR101521260B1
公开(公告)日：2015-05-18
申请号：KR1020080117310
申请日：2008-11-25
申请人： 삼성전자주식회사
发明人： 주성아 , 곽창훈 , 박나나 , 박일우
IPC分类号： H01L33/52
CPC分类号： H01L33/62 , H01L24/45 , H01L24/48 , H01L24/97 , H01L33/486 , H01L33/56 , H01L2224/45139 , H01L2224/48091 , H01L2224/4824 , H01L2224/97 , H01L2924/00014 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2924/00012
摘要： 본발명은발광다이오드패키지및 이의제조방법에관한것이다. 본발명의발광다이오드패키지는, 기판; 상기기판상부에실장되는 LED 칩;상기 LED 칩의외표면을포함한상기기판의상부에도포되는몰딩재; 및상기기판의하부에도포되는봉지재;를포함하며, 발광효율이향상되고, 패키지불량을감소시킬수 있으며, 제작공정이용이하여제작단가를절감할수 있는작용효과가발휘될수 있다.

14. 发明授权

KR101320514B1 칩-온-보드 방식에 의한 ＬＥＤ 패키지 有权
标题翻译： LED发光二极管封装
公开(公告)号：KR101320514B1
公开(公告)日：2013-10-22
申请号：KR1020070083886
申请日：2007-08-21
申请人： 삼성전자주식회사
发明人： 주성아 , 박정규 , 고건유 , 정영준 , 최승환
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： H01L33/62 , H01L2224/48091 , H01L2924/01322 , H05K1/09 , H05K3/24 , H05K2201/10106 , H01L2924/00014
摘要： 본 발명은 원가절감 및 방열효과가 우수한 LED 패키지에 관한 것으로, 인쇄회로기판; 상기 인쇄회로기판 상에 수백 ㎛ 두께를 갖는 전도성 구조물; 및 상기 인쇄회로기판 상에 실장되며, 상기 전도성 구조물을 통해 상기 인쇄회로기판과 전기적으로 연결되는 LED 칩을 포함하여 구성된 칩-온-보드 방식의 LED 패키지를 제공한다.
LED 패키지, 실리콘 구조물, 전극패턴

15. 发明公开

KR1020100058779A 발광 다이오드 패키지 및 이의 제조방법 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR1020100058779A
公开(公告)日：2010-06-04
申请号：KR1020080117310
申请日：2008-11-25
申请人： 삼성전자주식회사
发明人： 주성아 , 곽창훈 , 박나나 , 박일우
IPC分类号： H01L33/52
CPC分类号： H01L33/62 , H01L24/45 , H01L24/48 , H01L24/97 , H01L33/486 , H01L33/56 , H01L2224/45139 , H01L2224/48091 , H01L2224/4824 , H01L2224/97 , H01L2924/00014 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2924/00012
摘要： PURPOSE: A light emitting diode package and a manufacturing method thereof are provided to improve light emission efficiency by coating fluorescent material directly on the surface of the light emitting diode device. CONSTITUTION: An LED chip(120) is mounted on the upper part of a substrate(110). A molding material(130) is spread on the top of the substrate including the external surface of the LED chip. An encapsulating material(140) is spread on the lower part of substrate. A through hole is formed on the central part of the substrate. The LED chip is settled on the upper part of the penetration hole. The substrate is composed of the light transmitting quality.
摘要翻译：目的：提供一种发光二极管封装及其制造方法，以通过直接在发光二极管器件的表面上涂布荧光材料来提高发光效率。构成：将LED芯片（120）安装在基板（110）的上部。成型材料（130）被扩散在包括LED芯片的外表面的基板的顶部上。封装材料（140）扩散在基板的下部。在基板的中央部形成有通孔。 LED芯片沉入穿孔的上部。基板由透光质量组成。

16. 发明公开

KR1020090068587A 발광 다이오드 기판모듈과 그 제조방법 및 백라이트 유닛과그 제조방법 无效
标题翻译：发光二极管基板模块及其制造方法及背光单元及其制造方法
公开(公告)号：KR1020090068587A
公开(公告)日：2009-06-29
申请号：KR1020070136264
申请日：2007-12-24
申请人： 삼성전자주식회사
发明人： 박정규 , 주성아 , 최승환
IPC分类号： G02F1/13357
CPC分类号： G02F1/133603 , G02F1/133605 , G02F2001/133612 , H05K1/0274 , H05K1/053 , H05K1/092 , H05K2201/10106 , H05K2201/2054 , Y10S362/80
摘要： A light emitting diode substrate module and a fabrication method thereof and a backlight unit and a fabrication method thereof are provided to prevent loss of unnecessary material costs by patterning only a driving circuit. An insulating layer is formed on the whole outer surface of a metal plate by predetermined thickness. A reflection film(130) is formed in the whole outer surface of the metal plate by predetermined thickness. One or more LED(Light Emitting Diode) packages(150) are electrically connected to a driving circuit(145) pattern-printed on the reflection film. The reflection film reflects light generated from the light emitting diode package. A circuit protection film(140) is integrally formed in the reflection film.
摘要翻译：提供一种发光二极管基板模块及其制造方法以及背光单元及其制造方法，以通过仅构图驱动电路来防止不必要的材料成本的损失。在金属板的整个外表面上形成预定厚度的绝缘层。在金属板的整个外表面上形成预定厚度的反射膜（130）。一个或多个LED（发光二极管）封装（150）电连接到图案印刷在反射膜上的驱动电路（145）。反射膜反射从发光二极管封装产生的光。电路保护膜（140）整体地形成在反射膜中。

17. 发明公开

KR1020090032631A 발광다이오드 소자 无效
标题翻译：发光二极管装置
公开(公告)号：KR1020090032631A
公开(公告)日：2009-04-01
申请号：KR1020070098009
申请日：2007-09-28
申请人： 삼성전자주식회사
发明人： 고건유 , 정영준 , 최승환 , 주성아 , 박정규
IPC分类号： H01L33/00 , H01L21/20
摘要： A light emitting diode device is provided to improve the uniformity of the color and the luminous efficiency by positioning the carbon nanotube having the high optical transmittance rate on the light emitting surface of LED. An n-type nitride semiconductor layer(220) is formed in a substrate(210). An active layer(230) is formed in a part of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(240) is formed in the active layer. The p-type nitride semiconductor layer comprises the electrode formation region and the light emission region. The n-type and p-type nitride semiconductor layers and the active layer are made of the semiconductor material having composition expression of InxAlyGa1-x-yN(0
摘要翻译：提供一种发光二极管装置，通过将具有高透光率的碳纳米管定位在LED的发光表面上来提高颜色的均匀性和发光效率。在衬底（210）中形成n型氮化物半导体层（220）。在n型氮化物半导体层的一部分中形成有源层（230）。在有源层中形成p型氮化物半导体层（240）。 p型氮化物半导体层包括电极形成区和发光区。 n型和p型氮化物半导体层和有源层由具有In x Al y Ga 1-x-y N（0 <= X，0 <= Y，X + Y <= 1）的组成表达式的半导体材料制成。 p型电极（260）形成在p型氮化物半导体层的电极形成区域中。在p型氮化物半导体层的发光区域上形成碳纳米管（270）。在碳纳米管中形成荧光材料层（280）。在n型氮化物半导体层中形成n型电极（250）。

18. 发明公开

KR1020090032580A 질화물계 반도체 발광소자 无效
标题翻译：氮化物半导体发光器件
公开(公告)号：KR1020090032580A
公开(公告)日：2009-04-01
申请号：KR1020070097943
申请日：2007-09-28
申请人： 삼성전자주식회사
发明人： 고건유 , 윤상호 , 최승환 , 주성아 , 박정규
IPC分类号： H01L33/36
摘要： A nitride semiconductor light emitting device is provided to uniformly form the luminance by adjusting the interval between the electrodes according to the location of the electrode pad. A buffer layer and an n-type nitride semiconductor layer are laminated on a substrate which is the optical permeability. An active layer and a p-type nitride semiconductor layer are successively laminated on the second part of the n-type nitride semiconductor. The light emitting structure is formed with the laminating structure of the p-type nitride semiconductor layer and the active layer. The active layer is made of the InGaN/GaN layer of the multi-quantum well structure. An n-type electrode(150) is formed on the first region of the n-type nitride semiconductor layer. The n-type electrode comprises the n-type branch electrode(150') in order to efficiently disperse the current. The n-type electrode pad(155) is formed in the n-type electrode. A current spreading layer and a p-type electrode(160) are laminated on the p-type nitride semiconductor layer. The p-type electrode comprises the p-type branch electrode(160'). A p-type electrode pad(165) is formed in p-type electrode.
摘要翻译：提供氮化物半导体发光器件以通过根据电极焊盘的位置调节电极之间的间隔来均匀地形成亮度。缓冲层和n型氮化物半导体层层叠在作为透光性的基板上。有源层和p型氮化物半导体层依次层叠在n型氮化物半导体的第二部分上。发光结构由p型氮化物半导体层和有源层的层压结构形成。有源层由多量子阱结构的InGaN / GaN层制成。 n型电极（150）形成在n型氮化物半导体层的第一区域上。 n型电极包括n型分支电极（150'），以便有效地分散电流。 n型电极焊盘（155）形成在n型电极中。电流扩散层和p型电极（160）层叠在p型氮化物半导体层上。 p型电极包括p型分支电极（160'）。 p型电极焊盘（165）形成在p型电极中。

19. 发明公开

KR1020090032207A 질화갈륨계 발광다이오드 소자 无效
标题翻译： GAN型发光二极管装置及其制造方法
公开(公告)号：KR1020090032207A
公开(公告)日：2009-04-01
申请号：KR1020070097219
申请日：2007-09-27
申请人： 삼성전자주식회사
发明人： 고건유 , 정영준 , 최승환 , 주성아 , 박정규
IPC分类号： H01L33/02
CPC分类号： H01L33/0075 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16
摘要： A gallium nitride-based LED device is provided to minimize the variation of the composition ratio of alloy by forming the bonding layer into the soldering of a plurality of metal layers consisting of each single atom element. An LED chip(100) comprises a substrate(110) which is the optical permeability, a buffer layer, and an n-type nitride semiconductor layer(120). An active layer(130) and a p-type nitride semiconductor layer(140) are laminated successively on the first region of an n-type nitride semiconductor. A p-type electrode(150) is formed in the p-type nitride semiconductor layer. An n-type electrode(160) is formed in the second part of the n-type nitride semiconductor layer. A sub mount(200) is formed by using the silicon wafer with the superior thermal conductivity or the AlN ceramic substrate etc. A bonding layer(300) is formed with the laminating structure of the metal layer consisting of each single atom element. The bonding layer comprises the first metal layers(310, 320) and the second metal layer(330).
摘要翻译：提供一种氮化镓系LED器件，通过将粘合层形成为由各单个原子元素构成的多个金属层的焊接来使合金的组成比的变化最小化。 LED芯片（100）包括作为光导率的衬底（110），缓冲层和n型氮化物半导体层（120）。在n型氮化物半导体的第一区域上依次层叠有源层（130）和p型氮化物半导体层（140）。 p型电极（150）形成在p型氮化物半导体层中。 n型电极（160）形成在n型氮化物半导体层的第二部分中。通过使用具有优异导热性的硅晶片或AlN陶瓷基板等，形成副安装座（200）。由每个单个原子元件组成的金属层的层叠结构形成接合层（300）。结合层包括第一金属层（310,320）和第二金属层（330）。

20. 发明公开

KR1020090019445A 칩-온-보드 방식에 의한 ＬＥＤ 패키지 有权
标题翻译： LED发光二极管封装
公开(公告)号：KR1020090019445A
公开(公告)日：2009-02-25
申请号：KR1020070083886
申请日：2007-08-21
申请人： 삼성전자주식회사
发明人： 주성아 , 박정규 , 고건유 , 정영준 , 최승환
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： H01L33/62 , H01L2224/48091 , H01L2924/01322 , H05K1/09 , H05K3/24 , H05K2201/10106 , H01L2924/00014
摘要： A light emitting diode package is provided to reduce a manufacturing cost by forming silicon conductive material instead of AU or Ag electric pad. In a light emitting diode package, one conductive structure(120) is formed on the printed circuit board(110). One is selected from the silicone structure or the aluminum structure for the conductive structure. A LED chip(130) is mounted on the printed circuit board. The LED chip is electrically connected through the conductive structure to the printed circuit board. The thickness the conducting structure is hundreds um. The LED chip is capable of being connected to the conductive structure through the wire bonding.
摘要翻译：提供发光二极管封装，以通过形成硅导电材料代替AU或Ag电焊垫来降低制造成本。在发光二极管封装中，在印刷电路板（110）上形成一个导电结构（120）。一个选自硅氧烷结构或用于导电结构的铝结构。 LED芯片（130）安装在印刷电路板上。 LED芯片通过导电结构电连接到印刷电路板。导电结构的厚度为数百μm。 LED芯片能够通过引线接合连接到导电结构。

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