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11. 发明公开

KR1020120106620A 검사 장치 无效
标题翻译：检查装置
公开(公告)号：KR1020120106620A
公开(公告)日：2012-09-26
申请号：KR1020120026549
申请日：2012-03-15
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 하타케야마마사히로 , 요시카와쇼지 , 무라카미다케시 , 와타나베겐지 , 나이토요시히코 , 도마야스시 , 가리마타츠토무 , 하야시다케히데 , 츠카모토기와무 , 고하마다츠야 , 고바야시노보루
IPC分类号： G01N23/225 , G01N21/956
CPC分类号： H01J37/09 , G01N23/22 , G01N23/223 , G01N23/2251 , G01N2223/611 , H01J37/10 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/265 , H01J37/28 , H01J37/29 , H01J2237/0048 , H01J2237/022 , H01J2237/032 , H01J2237/038 , H01J2237/045 , H01J2237/0458 , H01J2237/0473 , H01J2237/0492 , H01J2237/061 , H01J2237/06333 , H01J2237/166 , H01J2237/186 , H01J2237/2002 , H01J2237/2007 , H01J2237/2008 , H01J2237/2448 , H01J2237/2482 , H01J2237/2485 , H01J2237/2817 , H01J2237/2855 , H01J2237/2857
摘要： PURPOSE: An inspecting device is provided to perform a manufacturing process same with a manufacturing process of a semiconductor wafer, thereby efficiently inspect shape failure and membranous failure. CONSTITUTION: An inspecting device is composed of a beam generating member, a first optical system, a second optical system, an image processing system, and a second detector. The second optical system comprises a first detector detecting secondary electric charge particles being generated from a movable numerical aperture and an inspection object and penetrates through the numerical aperture. The image processing system generates images based on the secondary electric charge particles detected by the first detector. The second detector is installed in between the movable numerical aperture and the first detector and detects a position and a shape at a cross-over position of the secondary electric charge particles generated from the inspection object.
摘要翻译：目的：提供与半导体晶片的制造工艺相同的制造工艺的检查装置，从而有效地检查形状不合格和膜失效。构成：检查装置由光束产生部件，第一光学系统，第二光学系统，图像处理系统和第二检测器构成。第二光学系统包括第一检测器，其检测从可移动数值孔径产生的二次电荷粒子和检查对象，并穿透数值孔径。图像处理系统基于由第一检测器检测到的二次电荷粒子产生图像。第二检测器安装在可动数值孔径和第一检测器之间，并且检测从检查对象产生的二次电荷颗粒的交叉位置处的位置和形状。

12. 发明公开

KR1020080087138A 시료 표면 검사방법 및 검사장치 有权
标题翻译：检测样品表面的方法和装置
公开(公告)号：KR1020080087138A
公开(公告)日：2008-09-30
申请号：KR1020087018240
申请日：2007-01-24
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 노지노부하루 , 나이토요시히코 , 소부카와히로시 , 데라오겐지 , 하타케야마마사히로 , 오쿠무라가츠야
IPC分类号： H01J37/29 , H01J37/20 , G01N23/225 , H01J37/21
CPC分类号： H01J37/265 , G01R31/307 , H01J37/04 , H01J2237/2441 , H01J2237/2446 , H01J2237/2594 , H01J2237/2817
摘要： A method and an apparatus for performing highly accurate sample surface inspection are provided. The method is provided for inspecting sample surfaces by using an electron beam type sample surface inspecting apparatus. In the method, the sample surface is irradiated with an electron beam generated from an electron gun of the sample surface inspecting apparatus, a secondary electron generated from the sample surface is focused on the electron detecting surface of a detector, and the sample surface is inspected. The method is characterized in that the focusing conditions of the secondary electron on the detecting surface of the detector are controlled to have a potential on the sample surface change in accordance with the quantity of the electron beam applied on the sample surface.
摘要翻译：提供了一种用于执行高精度样品表面检查的方法和装置。该方法用于通过使用电子束型样品表面检查装置来检查样品表面。在该方法中，用从样品表面检查装置的电子枪产生的电子束照射样品表面，从样品表面产生的二次电子聚焦在检测器的电子检测表面上，并检查样品表面。该方法的特征在于，根据施加在样品表面上的电子束的量，将二次电子在检测器的检测表面上的聚焦条件控制为使样品表面上的电位发生变化。

13. 发明授权

KR101842101B1 이물질 부착 방지 기능을 구비한 전자선 검사 장치 및 방법 有权
标题翻译：具有防异物附着功能的电子束检测装置和方法
公开(公告)号：KR101842101B1
公开(公告)日：2018-03-26
申请号：KR1020110075731
申请日：2011-07-29
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 와타나베겐지 , 하타케야마마사히로 , 나이토요시히코 , 고하마다츠야 , 데라오겐지 , 무라카미다케시 , 하야시다케히데 , 츠카모토기와무 , 소부카와히로시 , 기무라노리오
IPC分类号： H01J37/26 , H01J37/244 , H01J37/10
CPC分类号： H01J37/22 , H01J37/265 , H01J37/29 , H01J2237/004 , H01J2237/022 , H01J2237/24495 , H01J2237/24564 , H01J2237/2817
摘要： 본발명은, 시료표면에이물질이부착되는것을최대한방지할수 있게한 전자선검사장치를제공하는것이다. 당해장치는, 전압이인가되는시료의주위를포위하는위치에집진전극을배치하고, 당해집진전극에, 시료에인가되는전압과동일한극성의전압을인가하도록구성되어있다. 이에의해, 집진전극에파티클등의이물질이부착되므로, 시료표면에대한이물질부착을저감할수 있다. 집진전극을사용하는대신에, 스테이지를포함하는진공챔버의벽면에격자형상의함몰을형성하거나또는, 소정의전압이인가되는메시구조의평판을벽면에부설해도된다.
摘要翻译：本发明的目的在于提供一种能够尽可能防止异物附着在试样表面的电子束检查装置。该装置是，在所述集尘电极布置在适当的位置灰尘收集电极，以及包围该是所施加的电压的样品的外周，以便施加相同的电压的极性，施加到样品上的电压的技术。结果，颗粒等异物附着在集尘电极上，可以减少异物附着在试样表面上。代替使用集尘电极，以形成所述真空腔室的壁的格子状的凹部包括一个阶段，或者，它可能在其中一个预定的电压被施加到壁的网状结构平放。

14. 发明授权

KR101549093B1 전자선장치 및 이것을 이용한 시료관찰방법 有权
标题翻译：电子束装置和采用该方法的样品观察方法
公开(公告)号：KR101549093B1
公开(公告)日：2015-09-01
申请号：KR1020080034830
申请日：2008-04-15
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 가가도루 , 데라오겐지 , 하타케야마마사히로 , 와타나베겐지 , 나이토요시히코 , 무라카미다케시 , 기무라노리오
IPC分类号： H01J37/29 , H01J37/244 , H01J37/26
CPC分类号： G01N23/203 , G01N23/2251 , G01N2223/6116 , H01J37/28 , H01J2237/004 , H01J2237/022 , H01J2237/2446 , H01J2237/2817
摘要： 본발명의전자선장치는, 시료(S)를탑재하는스테이지(30)와, 소정의조사영역(15)을가지는전자빔을생성하고, 전자빔을시료를향하여조사하는 1차광학계(10)와, 전자빔의시료에대한조사에의하여발생한, 시료의구조정보를얻은전자를검출하고, 소정의시야영역(25)에대하여시료의상을취득하는 2차광학계(20)와, 소정의조사영역(15)의위치를소정의시야영역(25)에대하여변경가능한조사영역변경부(13, 14)를구비한다. 1차광학계에프리차지의기능도가지게함으로써프리차지유닛을생략할수 있다. 시료에대한프리차지의영역과양을제어하여, 시료에따른최적의프리차지를행할수 있다.

15. 发明公开

KR1020120034552A 이물질 부착 방지 기능을 구비한 전자선 검사 장치 및 방법 审中-实审
标题翻译：电子束检查装置和具有外部材料抗附着功能的方法
公开(公告)号：KR1020120034552A
公开(公告)日：2012-04-12
申请号：KR1020110075731
申请日：2011-07-29
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 와타나베겐지 , 하타케야마마사히로 , 나이토요시히코 , 고하마다츠야 , 데라오겐지 , 무라카미다케시 , 하야시다케히데 , 츠카모토기와무 , 소부카와히로시 , 기무라노리오
IPC分类号： H01J37/26 , H01J37/244 , H01J37/10
CPC分类号： H01J37/22 , H01J37/265 , H01J37/29 , H01J2237/004 , H01J2237/022 , H01J2237/24495 , H01J2237/24564 , H01J2237/2817
摘要： PURPOSE: An electronic beam inspection apparatus and method are provided to prevent foreign materials to be attached by applying voltage of same polarity as the voltage applied in a sample. CONSTITUTION: A first electron optical system includes a first system lens(320) inducing an electronic beam emitted from an electron-beam source. A first electron which is induced by the first electron optical system is emitted to a stage(100). A second electron optical system includes a second system lens and an aperture(361). A detector(400) detects a second electron and at least one-way of a mirror electron. A first power source applies first voltage to a sample arranged in the stage. One or more first electrodes collect dusts or particles. A cover prevents the dusts or the particles to be entered in the stage.
摘要翻译：目的：提供电子束检查装置和方法，通过施加与施加在样品中的电压相同极性的电压来防止异物附着。构成：第一电子光学系统包括引起从电子束源发射的电子束的第一系统透镜（320）。由第一电子光学系统感应的第一电子被发射到级（100）。第二电子光学系统包括第二系统透镜和孔（361）。检测器（400）检测第二电子和至少单向镜电子。第一电源将第一电压施加到在该级中布置的样品。一个或多个第一电极收集灰尘或颗粒。盖子防止灰尘或颗粒进入舞台。

16. 发明公开

KR1020080087137A 시료 표면 검사장치 및 검사방법 有权
标题翻译：检测样品表面的装置和方法
公开(公告)号：KR1020080087137A
公开(公告)日：2008-09-30
申请号：KR1020087018235
申请日：2007-01-24
申请人： 가부시키가이샤 에바라 세이사꾸쇼 , 가부시끼가이샤 도시바
发明人： 노지노부하루 , 나이토요시히코 , 소부카와히로시 , 하타케야마마사히로 , 데라오겐지 , 무라카미다케시 , 오쿠무라가츠야 , 히가시키다츠히코
IPC分类号： H01L21/66 , H01L21/027 , G01N23/225 , H01J37/147
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446 , G03F7/70633 , G03F7/70625 , G03F7/7065 , H01L21/67288
摘要： Provided are an apparatus for inspecting defects un semiconductor device manufacturing process with high precision which has not been conventionally achieved and a method for inspecting or evaluating the semiconductor devices. In the method for inspecting a sample surface by means of a mapping electron beam inspecting apparatus (1), the size of an area on the sample surface to be irradiated with an electron beam generated from an electron gun (21) is formed to be larger than a pattern size on the sample surface in substantially circular or ellipse. The electron beam is applied at substantially the center of the pattern on the sample surface, secondary electrons generated from the sample surface by electron beam irradiation are focused on the electron dectecting surface of a detector (41) and the sample surface is inspected.
摘要翻译：提供了一种用于高精度检测半导体器件制造过程的缺陷的装置，以及用于检查或评估半导体器件的方法。在通过映射电子束检查装置（1）检查样品表面的方法中，形成用从电子枪（21）产生的电子束照射的样品表面上的区域的尺寸较大大于圆形或椭圆形的样品表面上的图案尺寸。电子束在样品表面的图案的大致中心处被施加，通过电子束照射从样品表面产生的二次电子聚焦在检测器（41）的电子检测表面上，并检查样品表面。

17. 发明公开

KR1020080058383A 반도체디바이스 및 반도체디바이스의 테스팅방법 有权
标题翻译：半导体器件及其测试方法
公开(公告)号：KR1020080058383A
公开(公告)日：2008-06-25
申请号：KR1020087008779
申请日：2006-09-08
申请人： 가부시키가이샤 에바라 세이사꾸쇼
发明人： 가가도루 , 나이토요시히코 , 츠네오카마사토시 , 데라오겐지 , 노지노부하루 , 다지마료
IPC分类号： H01L21/66 , H01L21/768 , G01R31/302
CPC分类号： G01R31/307 , G01R31/2884 , G11C29/02 , G11C29/025
摘要： There are provided a semiconductor device having a pattern which allows electric failures to be sensitively detected at high speeds, and a method of testing the same. In one embodiment, the semiconductor device comprises a pair of row wires including a plurality of first wires arranged in a first layer at predetermined intervals in a row direction, where the first wires have ends connected to second wires arranged in a second layer at a predetermined intervals through vias, and the first wire and second wire are at the same potential. In the pair of row wires, a first wire positioned at a right end of one row wire is connected to a first conductor, and a first wire positioned at a left end in the other row wire is connected to a second conductor. By sequentially scanning the first conductor and second conductor using an electron beam, a change in the amount of emitted secondary electrons due to a difference in potential between these conductors is detected to detect electric anomalies.
摘要翻译：提供了具有能够高速灵敏地检测电故障的图案的半导体器件及其测试方法。在一个实施例中，半导体器件包括一对行导线，其包括以行方向以预定间隔布置在第一层中的多个第一布线，其中第一布线的端部以预定的方式连接到布置在第二层中的第二布线通过通孔的间隔，并且第一线和第二线处于相同的电位。在一对行配线中，位于一列行的右端的第一配线与第一导体连接，位于另一行配线的左端的第一配线与第二导体连接。通过使用电子束顺序扫描第一导体和第二导体，检测由于这些导体之间的电位差引起的发射二次电子量的变化，以检测电气异常。

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