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121. 发明授权

KR100432329B1 반도체장치및그제조방법 失效
公开(公告)号：KR100432329B1
公开(公告)日：2004-09-16
申请号：KR1019980007096
申请日：1998-03-04
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 오스미타카시
IPC分类号： H01L21/28
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： 본 발명의 반도체 장치는, 도전성 패턴을 갖는 반도체 집적회로와, 반도체 집적회로 상에 형성되어 높이가 서로 다른 복수의 기저부를 형성하는 절연층과, 도전성 패턴의 일부를 노출시키기 위해 절연층에 관통 형성된 개구부와, 도전성 패턴의 노출 표면으로부터 가장 높은 기저부의 상단면에 연장되도록, 절연층과 개구부 상에 형성된 도전층을 구비한다. 이때, 상기 절연층, 개구부 및 도전층으로 전극이 구성된다.
摘要翻译：一种半导体装置，包括：具有导体图案的半导体集成电路; 绝缘层，形成在所述半导体集成电路上以形成具有不均匀高度的多个基底构件; 穿过绝缘层形成以暴露导电图案的一部分的开口; 以及形成在绝缘层和开口上的导电层，导电层从导电图案的暴露部分延伸到最高基底部件的顶表面。电极由绝缘层，开口和导电层组成。

122. 发明公开

KR1020040076215A 전자 회로 장치 有权
标题翻译：具有支持快速信号的供电结构的电子电路装置
公开(公告)号：KR1020040076215A
公开(公告)日：2004-08-31
申请号：KR1020040011942
申请日：2004-02-23
申请人： 오쯔까, 간지 , 우사미, 다모쯔 , 가부시키가이샤 히타치세이사쿠쇼 , 후지쯔 가부시끼가이샤 , 오끼 덴끼 고오교 가부시끼가이샤 , 소니 주식회사 , 산요덴키가부시키가이샤 , 미쓰비시덴키 가부시키가이샤 , 로무 가부시키가이샤 , 가부시끼가이샤 도시바 , 파나소닉 주식회사
发明人： 오쯔까,간지 , 우사미,다모쯔
IPC分类号： G06F13/40
CPC分类号： H01P3/081 , H01L23/5286 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/3011 , H01P3/026 , H01P3/08 , H01L2924/00
摘要： PURPOSE: An electronic circuit device having a power supplying structure is provided to offer the power supplying structure to support a high speed signal over a GHz range and make a change of power ground have no influence on entire electronic circuit device. CONSTITUTION: The electronic circuit device is equipped with a power-ground paired transfer line(20), a driver transistor(10), and a signal-ground paired transfer line(30). The power-ground paired transfer line is formed by oppositely arranging a power line(22) and the first ground line(23), and interposing an insulation layer. The signal-ground paired transfer line is driven by an output signal of the driver transistor, and is formed by oppositely arranging a signal line(31) and the second ground line(32), and interposing the insulation layer. The power line of the power-ground paired transfer line is directly connected to a drain layer(3) of the driver transistor and the first ground line of the power-ground paired transfer line is connected to a substrate(7) of the driver transistor.
摘要翻译：目的：提供一种具有供电结构的电子电路装置，以提供供电结构以支持GHz范围内的高速信号，并且使电源接地的改变对整个电子电路装置没有影响。构成：电子电路装置配备有电源配对传输线（20），驱动晶体管（10）和信号 - 地对配对传输线（30）。电力 - 配线传输线通过相反地布置电力线（22）和第一接地线（23）而形成，并且插入绝缘层。信号 - 接地成对传送线由驱动晶体管的输出信号驱动，并且通过相反地布置信号线（31）和第二接地线（32）并插入绝缘层而形成。电源 - 配对传输线的电源线直接连接到驱动晶体管的漏极层（3），并且电源 - 配对传输线的第一接地线连接到驱动晶体管的衬底（7）。

123. 发明公开

KR1020040055624A 에멀전성 조성물 및 그것에 의해 형성한 도포막 및 그도포막을 사용한 냉각구조 无效
标题翻译：具有冷却性能和热绝缘性能的乳液型组合物，由组合物形成的涂层和包含涂层的冷却结构
公开(公告)号：KR1020040055624A
公开(公告)日：2004-06-26
申请号：KR1020030091857
申请日：2003-12-16
申请人： 세라미션 컴파니 리미티드 , 오끼 덴끼 고오교 가부시끼가이샤
发明人： 마치다마사히로 , 카네코노리요시 , 시미즈코우이치로 , 데우시유우이치 , 노즈에마사히토
IPC分类号： C09D5/02
CPC分类号： H05K3/285 , C08K3/22 , H05K1/0203 , H05K1/021 , H05K3/284 , H05K3/3421 , H05K3/3447 , H05K2201/0129 , H05K2201/0209 , H05K2203/1105 , C08L83/04
摘要： PURPOSE: Provided are an emulsion-type composition having a cooling property and a heat insulating property, a coating layer formed by the composition and a cooling structure containing the coating layer for improving confidence or stability. CONSTITUTION: The emulsion-type composition comprises an emulsion containing a silicone resin; a metal oxide; and optionally at least one kind of nitride selected from the group consisting of boron nitride, aluminum nitride, zirconium nitride, tin nitride, strontium nitride, titanium nitride and barium nitride. Preferably the metal oxide comprises kaolin, silicon oxide, aluminum oxide, and/or at least one selected from the group consisting of titanium oxide, zirconium oxide, antimony oxide, germanium oxide, boron oxide, calcium oxide, barium oxide, strontium oxide, bismuth oxide, tin oxide and talc.
摘要翻译：目的：提供具有冷却性和隔热性的乳液型组合物，由该组合物形成的涂层和含有用于提高置信度或稳定性的涂层的冷却结构。构成：乳液型组合物包含含有硅树脂的乳液; 金属氧化物; 以及可选地选自氮化硼，氮化铝，氮化锆，氮化锡，氮化锶，氮化钛和氮化钡中的至少一种氮化物。优选地，金属氧化物包括高岭土，氧化硅，氧化铝和/或选自氧化钛，氧化锆，氧化锑，氧化锗，氧化硼，氧化钙，氧化钡，氧化锶，铋中的至少一种氧化物，氧化锡和滑石。

124. 发明公开

KR1020040055623A 방열시이트 无效
标题翻译：热拉片，包括热拉膜和粘合层
公开(公告)号：KR1020040055623A
公开(公告)日：2004-06-26
申请号：KR1020030091855
申请日：2003-12-16
申请人： 오끼 덴끼 고오교 가부시끼가이샤 , 세라미션 컴파니 리미티드
发明人： 마치다마사히로 , 오타아키라 , 시미즈코우이치로 , 데우시유우이치 , 노즈에마사히토
IPC分类号： H05K7/20
CPC分类号： H01L23/3735 , H01L2924/0002 , Y10T428/256 , Y10T428/259 , H01L2924/00
摘要： PURPOSE: A heat radiating sheet is provided to eliminate constraints of shape or arrangement of component to be cooled and allow for ease of manufacture of heat radiating sheet. CONSTITUTION: A heat radiating sheet(1) comprises a flexible heat absorbing layer(2) having a thermal conductivity; a flexible heat radiating film(3) formed on the surface of the heat absorbing layer, and which has infrared ray radiating effects; and an adhesive layer(4) formed on the rear surface of the heat absorbing layer, and made of a thermally conductive adhesive.
摘要翻译：目的：提供散热片以消除要冷却的部件的形状或布置的限制，并且容易制造散热片。构成：散热片（1）包括具有导热性的柔性吸热层（2）; 形成在吸热层的表面上的具有红外线辐射效果的柔性散热膜（3）以及形成在吸热层的后表面上并由导热粘合剂制成的粘合剂层（4）。

125. 发明公开

KR1020040042824A 상담업무 지원시스템, 상담업무단말, 상담업무 지원단말,서버 및 프로그램 无效
标题翻译：系统，终端，服务器和程序，支持咨询业务，咨询业务支持终端提供适用于客户的咨询屏幕
公开(公告)号：KR1020040042824A
公开(公告)日：2004-05-20
申请号：KR1020030076597
申请日：2003-10-31
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 요시다토시유키
IPC分类号： G06Q10/00
CPC分类号： G06Q30/016 , G06Q30/02 , G06Q30/0281
摘要： PURPOSE: A system, a terminal, a server, and a program for supporting a consultation business, and a consultation business supporting terminal are provided to support the consultation business with a customer by outputting additional data, which is explaining contents of a past or present display image on the consultation business terminal, to the consultation business terminal. CONSTITUTION: The consultation business terminal(7) is equipped with a display tool, and performs the consultation with the customer by displaying the screen fit to a consultation case of the customer, while the consultation is processed. Consultation business supporting terminals(17-1¯17-n) support the consultation business by outputting the data assisting the consultation business. Servers(5-1¯5-n) are connected to the consultation business terminal and the consultation business supporting terminal through a communication network(3), store applications operable to both terminals, and execute the application based on operations by both terminals.
摘要翻译：目的：提供一种用于支持咨询业务的系统，终端，服务器和程序，以及咨询业务支持终端，以通过输出附加数据来支持与客户的咨询业务，该数据解释过去或现在的内容在咨询业务终端上显示图像，到咨询业务终端。规定：咨询业务终端（7）配有显示工具，并在咨询处理的同时，通过显示符合客户咨询情况的屏幕，与客户进行协商。咨询业务支持终端（17-1〜17-n）通过输出协助咨询业务的数据支持咨询业务。服务器（5-1〜5-n）通过通信网络（3）连接到咨询业务终端和咨询业务支持终端，存储可操作到两个终端的应用，并且基于两个终端的操作来执行应用。

126. 发明授权

KR100413637B1 개량된열선택신호를출력하는열디코더를구비한반도체메모리장치 失效
公开(公告)号：KR100413637B1
公开(公告)日：2004-03-31
申请号：KR1019970705811
申请日：1995-12-25
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 다카하시신야 , 혼다다카시
IPC分类号： G11C11/407
摘要： 본 발명의 반도체 메모리회로 100에서는, 열선택신호를 컬럼선(CL)에 출력하는 열디코더 103의 출력부분을 구성하는 인버터(125)에 주어지는 구동전위가, 외부에서 주어지는 전원전위 Vcc 보다 낮게 설정되어 있다. 이 구성에 의하면, 비트선과 데이터버스가 접속되는 타이밍이 비트선상의 전위의 증폭정도에 의해 결정되도록 되기 때문에, 고속화를 실현하면서 확실한 동작을 보증할 수 있는 반도체 메모리장치를 제공하는 것이 가능해진다.

127. 发明授权

KR100407751B1 반도체장치 失效
公开(公告)号：KR100407751B1
公开(公告)日：2004-03-20
申请号：KR1019980005012
申请日：1998-02-18
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 고바야시하루후미
IPC分类号： H01L23/50
CPC分类号： H05K1/141 , H01L23/3128 , H01L23/32 , H01L23/49555 , H01L23/49805 , H01L23/49816 , H01L2924/0002 , H01L2924/15311 , H01L2924/3011 , H05K1/145 , H05K1/183 , H05K2201/049 , H05K2201/10689 , H05K2201/10734 , H01L2924/00
摘要： A semiconductor apparatus (40) includes a first set of connection terminals (46) and a second set of connection terminals (48). One ends of the first and second sets of connection terminals (46 and 48) are connected to a semiconductor chip (41). The other ends of the first set of connection terminals (46) are connected onto a first connection plane (50) outside of a package (42). The other ends of the second set of connection terminals (48) are connected onto a second connection plane (52) outside of the package (42).
摘要翻译：半导体装置（40）包括第一组连接端子（46）和第二组连接端子（48）。第一和第二组连接端子（46和48）的一端连接到半导体芯片（41）。第一组连接端子（46）的另一端连接到包装（42）外侧的第一连接平面（50）上。第二组连接端子（48）的另一端连接到封装（42）外侧的第二连接平面（52）上。＆lt;图像＆GT;

128. 发明授权

KR100403886B1 반도체장치의제조방법 失效
公开(公告)号：KR100403886B1
公开(公告)日：2004-02-11
申请号：KR1019980021528
申请日：1998-06-10
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 하까마다신이치
IPC分类号： H01L21/28
CPC分类号： H01L28/87 , H01L27/10852
摘要： The method according to this invention, of manufacturing a semiconductor device includes forming a polysilicon layer on a silicon substrate, forming a first resist pattern on the polysilicon layer, introducing impurity ions into the polysilicon layer with the first resist pattern used as a mask to form a high density impurity layer within the polysilicon layer, forming a second resist pattern on the polysilicon layer at a region where the first resist pattern is formed, the second resist pattern being greater than the first resist pattern so that the region where the first resist pattern is formed and a peripheral region thereof is covered by the second resist pattern, and etching the polysilicon layer including the high density impurity layer using the second resist pattern as a mask. From the above method, a portion of the polysilicon layer located at a region not covered by the second resist layer and the high density impurity layer are etched.
摘要翻译：根据本发明的制造半导体器件的方法包括在硅衬底上形成多晶硅层，在多晶硅层上形成第一抗蚀剂图案，用第一抗蚀剂图案作为掩模向多晶硅层中引入杂质离子以形成在所述多晶硅层内的高浓度杂质层，在形成所述第一抗蚀剂图案的区域处的所述多晶硅层上形成第二抗蚀剂图案，所述第二抗蚀剂图案大于所述第一抗蚀剂图案，使得所述第一抗蚀剂图案并且其周边区域被第二抗蚀剂图案覆盖，并且使用第二抗蚀剂图案作为掩模来蚀刻包括高浓度杂质层的多晶硅层。根据上述方法，蚀刻位于未被第二抗蚀剂层和高密度杂质层覆盖的区域处的多晶硅层的一部分。

129. 发明授权

KR100404159B1 반도체장치 有权
公开(公告)号：KR100404159B1
公开(公告)日：2004-02-05
申请号：KR1019980035871
申请日：1998-09-01
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 데루이마꼬또
IPC分类号： H01L23/12
CPC分类号： H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L23/50 , H01L23/552 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/01079 , H01L2924/07811 , H01L2924/15173 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/05599
摘要： 외부로의 전자파의 방사나, 외부로부터의 전자파에 의한 오동작을 방지할 수 있는 반도체장치를 제공한다.
반도체장치에 있어서, 금속제 캡 (15) 을 기판 (1) 의 반도체소자 (12) 탑재면측에 피복시켜, 상기 금속제 캡 (15) 을 기판 (1) 의 실링 (4), 쓰루홀 (5a), 및 가장 외주에 있는 외부단자 (18a) 를 통하여 머더보드 (mother board) 의 접지와 접속시킨다.
摘要翻译：根据本申请的发明的半导体器件包括：衬底，具有其上形成互连的表面;半导体元件，连接到互连并安装在衬底上;以及导电图，用于覆盖与地电连接的半导体元件潜在。由于以这种方式设置了用于覆盖半导体元件的导电帽，所以半导体器件可以防止电磁波向外部发射并且可以防止由于外部电磁波而发生故障。

130. 发明授权

KR100399110B1 반도체장치 失效
公开(公告)号：KR100399110B1
公开(公告)日：2003-12-31
申请号：KR1019980701867
申请日：1997-07-24
申请人： 오끼 덴끼 고오교 가부시끼가이샤
发明人： 구로키마사키
IPC分类号： G11C11/407
CPC分类号： G11C7/1069 , G11C7/1051 , H03K17/162 , H03K17/6871
摘要： A semiconductor device provided with a driving section comprising an output transistor NMOS (130) or PMOS (129) which drives an output terminal and a control section which controls the operation of the driving section. The control section outputs an enable signal which turns on/off the NMOS (130) or PMOS (129). The enable signal is generated from a pulse-like readout instructing signal INI and prolong the time of transition of the NMOS (130) or PMOS (129) from on to off.
摘要翻译：一种半导体器件，其设置有驱动部分，该驱动部分包括驱动输出端子的输出晶体管NMOS（130）或PMOS（129）和控制驱动部分的操作的控制部分。控制部分输出使NMOS / NMOS晶体管（129）导通/截止的使能信号。使能信号由类似脉冲的读出指令信号INI产生，并延长NMOS（130）或PMOS（129）从导通到截止的转换时间。＆lt;图像＆GT;

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