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    • 103. 发明公开
    • 포토레지스트 형성용 화합물, 이를 포함하는 저분자포토레지스트 조성물 및 패턴 형성 방법
    • 形成光电元件的化合物,包括该化合物的光电组合物和形成图案的方法
    • KR1020070064243A
    • 2007-06-20
    • KR1020060105989
    • 2006-10-31
    • 삼성전자주식회사한국과학기술원
    • 김경미김영호김진백오태환
    • G03F7/004G03F7/039
    • G03F7/0392G03F7/0045Y10S430/114Y10S430/128Y10S430/146
    • Provided are a compound for forming a photoresist, a low molecular photoresist composition comprising the same, which has higher etching resistance while maintaining advantages of conventional low molecular photoresist composition, and a method of forming a pattern by using the composition. The compound for forming a photoresist comprises one residue selected from the group consisting of cyclic residues represented by the formula(1), the formula(2), the formula(3) and the formula(4), and a residue represented by the formula(9), wherein the R is a tertiary butyl group or 1-tertiary butoxy ethyl group. The low molecular photoresist composition comprises 7-14 wt% of the above compound, 0.1-0.5 wt% of a photoacid generator and the balance of an organic solvent. In the composition, the photoacid generator is preferably at least one selected from the group consisting of triarylsulfonium salt, diaryliodonium salt, sulfonate and N-hydroxysuccinimide triflate.
    • 提供了一种用于形成光致抗蚀剂的化合物,包含该化合物的低分子光刻胶组合物,其具有较高的抗蚀刻性,同时保持了常规低分子光刻胶组合物的优点,以及通过使用该组合物形成图案的方法。 用于形成光致抗蚀剂的化合物包括选自由式(1),式(2),式(3)和式(4)表示的环状残基的一个残基,以及由式 (9),其中R是叔丁基或1-叔丁氧基乙基。 低分子光刻胶组合物包含7-14重量%的上述化合物,0.1-0.5重量%的光酸产生剂和余量的有机溶剂。 在组合物中,光酸产生剂优选为选自三芳基锍盐,二芳基碘鎓盐,磺酸盐和N-羟基琥珀酰亚胺三氟甲磺酸盐中的至少一种。
    • 108. 发明公开
    • 이동 통신 시스템에서 기지국과 이동국간의 상태 동기화를 위한 시스템 및 방법
    • 宽带无线接入通信系统中基站与移动站之间状态同步的系统与方法
    • KR1020070005420A
    • 2007-01-10
    • KR1020050060945
    • 2005-07-06
    • 삼성전자주식회사
    • 손영문장홍성주판유손중제조재원이미현강현정홍송남이성진임형규김영호
    • H04W56/00
    • H04W76/028H04L1/0028H04L5/0053H04L5/0094H04W76/19
    • A system and method for the state synchronization between a base station and a mobile station in a BWA(Broadband Wireless Access) communication system are provided to enable an MS(Mobile Station) to match state synchronization with a BS(Base Station) as the BS, in case that the CPU is reset, sends a changed reset count value to the MS and the MS executes network re-entry procedures after comparing the present reset count value with the previous reset count value. A base station periodically transmits a downlink frame containing DLFP(Downlink Frame Prefix) information to an MS(702,704). Whenever DLFP information is received, the MS extracts a reset count value and compares the extracted present reset value with a previously stored old reset count value(706). If a CPU of the BS is reset(708), the BS increases the reset count value by 1(710). Then, the BS transmits DLFP information containing the increased reset count value to the MS(712). At this time, the MS compares the present reset count value contained in the received DLFP information with a previously stored old reset count value(714). If it is judged that the two values are different, the MS, recognizing that the CPU of the BS has been reset, executes network re-entry procedures for state synchronization with the BS(716).
    • 提供了一种用于在BWA(宽带无线接入)通信系统中的基站与移动台之间的状态同步的系统和方法,以使得MS(移动站)能够将与BS(基站)的状态同步作为BS 在CPU复位的情况下,向MS发送改变的复位计数值,并且在将当前复位计数值与先前复位计数值进行比较之后MS执行网络重入程序。 基站周期性地将包含DLFP(下行链路帧前缀)信息的下行链路帧发送到MS(702,704)。 每当接收到DLFP信息时,MS提取复位计数值,并将提取的当前复位值与先前存储的旧复位计数值进行比较(706)。 如果BS的CPU被重置(708),则BS将复位计数值增加1(710)。 然后,BS向MS发送包含增加的复位计数值的DLFP信息(712)。 此时,MS将接收的DLFP信息中包含的当前复位计数值与先前存储的旧复位计数值进行比较(714)。 如果判断出两个值不同,则认识到BS的CPU已被复位的MS执行用于与BS进行状态同步的网络重入程序(716)。
    • 109. 发明公开
    • 에이알에프 포토레지스트 조성물 및 이를 이용한 플로우용에이알에프 포토레지스트 콘택홀 패턴 형성 방법
    • ARF光电组合物和使用ARF光电组合物形成ARF光电接触孔图案的方法
    • KR1020070000064A
    • 2007-01-02
    • KR1020050055504
    • 2005-06-27
    • 삼성전자주식회사
    • 한석윤상웅김영호윤은영
    • G03F7/004G03F7/00
    • G03F7/0397G03F7/0045
    • ArF photoresist composition for patterning ArF photoresist contact hole is provided to control flowing amount of the photoresist during the flowing process, and give ArF photoresist contact hole pattern with microfine width by comprising photosensitive resin containing blocking groups for inducing hydrogen bonds. The composition includes: 10 to 15wt.% of photosensitive resin containing first and second blocking groups to induce hydrogen bonds; 1 to 1.5wt.% of photoacid generator that reacts with light and produces acid; and 83.5 to 89wt.% of organic solvent. The first blocking group includes acetal group and tertiary alcoxy carbonyl group. The second blocking group includes adamantyl group, lacton group and hydroxyl group. Amounts of the first blocking group range from 1 to 2wt.% relative to total weight of the blocking groups.
    • 提供用于图案化ArF光致抗蚀剂接触孔的ArF光致抗蚀剂组合物以控制流动过程中光致抗蚀剂的流动量,并通过包含含有用于诱导氢键的封闭基团的感光树脂,给出具有超细宽度的ArF光刻胶接触孔图案。 该组合物包括:10至15重量%的含有第一和第二封闭基团以感应氢键的光敏树脂; 1至1.5重量%的光反应产生剂与光反应并产生酸; 和83.5〜89重量%的有机溶剂。 第一个封闭基团包括缩醛基和叔烷氧基羰基。 第二个封闭基团包括金刚烷基,内酯基和羟基。 第一封闭基团的量相对于封闭基团的总重量为1至2重量%。