会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明授权
    • 표면으로부터 오염물을 제거하는 세정 장비 및 이를이용한 세정 방법
    • 표면으로부터오염물을제거하는세정장비및이를이용한세정방표
    • KR100421038B1
    • 2004-03-03
    • KR1020010016327
    • 2001-03-28
    • 삼성전자주식회사
    • 이문희이근택심우관정종호
    • H01L21/304
    • H01L21/67028B08B7/0057B08B7/02B24C1/003Y10S134/902
    • A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
    • 用于从基底表面去除污染物的清洁设备包括两部分:一部分产生包括冷冻颗粒的气溶胶并将气溶胶引导到基底表面上以通过物理力从表面除去污染物,另一部分是其中 包括气态反应物的流体被引导到基底的表面上,同时辐照表面以引起反应物和表面上的有机污染物之间的化学反应,从而化学除去有机污染物。 在清洁基板的方法中,物理和化学清洁过程以彼此分离的方式进行,以使气溶胶的冷冻颗粒不暴露于照射基板表面所使用的光的作用。 因此,气雾剂在清洁基材上的效果被最大化。
    • 93. 发明公开
    • 웨이퍼 세정 장치
    • 装置清洁
    • KR1020040011829A
    • 2004-02-11
    • KR1020020044976
    • 2002-07-30
    • 삼성전자주식회사
    • 김동현이상호
    • H01L21/302
    • H01L21/67051B08B3/02Y10S134/902
    • PURPOSE: An apparatus for cleaning a wafer is provided to remove fully the remaining particles by injecting the cleaning solution on the surface of a rotating wafer. CONSTITUTION: An apparatus for cleaning a wafer includes a plurality of holders(250), the first plate(210), and the second plate(220). The holders(250) are used for gripping a circumference of a wafer and rotating the wafer. The first plate(210) is opposite to the first side of the wafer. The first plate(210) includes the first nozzles(212) to inject the first cleaning solution. The second plate(220) is opposite to the second side of the wafer. The second plate(220) includes the second nozzles(222) to inject the second cleaning solution.
    • 目的:提供一种用于清洁晶片的设备,通过将清洁溶液注入旋转晶片的表面来完全去除剩余的颗粒。 构成:用于清洁晶片的装置包括多个保持器(250),第一板(210)和第二板(220)。 保持器(250)用于夹紧晶片的圆周并旋转晶片。 第一板(210)与晶片的第一侧相对。 第一板(210)包括用于喷射第一清洁溶液的第一喷嘴(212)。 第二板(220)与晶片的第二侧相对。 第二板(220)包括用于喷射第二清洁溶液的第二喷嘴(222)。
    • 95. 发明公开
    • 웨이퍼 처리 장치
    • 加工过程的装置
    • KR1020040006407A
    • 2004-01-24
    • KR1020020040683
    • 2002-07-12
    • 삼성전자주식회사
    • 박종철
    • H01L21/304
    • H01L21/67051B08B3/12Y10S134/902
    • PURPOSE: An apparatus for processing a wafer is provided to enhance the cleaning efficiency by supplying the processing fluid having the ultrasonic vibration to a wafer. CONSTITUTION: An apparatus for processing a wafer includes a rotation chuck(210), a processing fluid supply unit(220), and an ultrasonic vibrator(230). The rotation chuck(210) is used for supporting and rotating a wafer(W). The processing fluid supply unit(220) includes the first storage part(220a) for storing the first processing fluid and the first slit connected to the first storage part(220a). The processing fluid supply unit(220) is installed on an upper part of the rotation chuck(210) in order to supplying the first processing fluid to a surface of the wafer(W). The ultrasonic vibrator(230) is installed in the first storage part(220a) in order to transmit the ultrasonic vibration to the first storage part(220a).
    • 目的:提供一种用于处理晶片的装置,以通过将具有超声波振动的处理流体供应到晶片来提高清洁效率。 构成:用于处理晶片的装置包括旋转卡盘(210),处理流体供应单元(220)和超声波振动器(230)。 旋转卡盘(210)用于支撑和旋转晶片(W)。 处理液供给单元(220)包括用于存储第一处理流体的第一存储部(220a)和与第一存储部(220a)连接的第一狭缝。 处理液供给单元(220)安装在旋转卡盘(210)的上部,以将第一处理流体供给到晶片(W)的表面。 超声波振动器(230)安装在第一存储部(220a)中,以将超声波振动传递到第一存储部(220a)。
    • 96. 发明公开
    • 반도체 기판의 건조장비
    • 半导体基片干燥设备
    • KR1020040001332A
    • 2004-01-07
    • KR1020020036489
    • 2002-06-27
    • 삼성전자주식회사
    • 권영민남창현박상오명영광안덕민
    • H01L21/304
    • H01L21/67057B08B3/102H01L21/67028Y10S134/902
    • PURPOSE: A semiconductor substrate drying equipment using the marangoni effect is provided to prevent IPA(Isopropyl Alcohol) condensate forming at the outlet of a dry gas nozzle from falling into a wafer holding chamber. CONSTITUTION: In a semiconductor substrate drying equipment, a chamber(100) includes a bath(140) containing semiconductor substrates and a cover(120) which opens and shuts the bath. Also included is a bubbler(200) having a steam generator(220) that generates an alcohol steam for drying the semiconductor substrate and an injector(240) which injects the chamber(100) with the alcohol steam and a carrier gas that carries the alcohol steam. The injector(240) is provided with a guide device which leads the IPA(Isopropyl Alcohol) condensate at the outlet of the injector(240) to flow inside the injector.
    • 目的:提供使用马拉贡尼效应的半导体基板干燥设备,以防止在干燥气体喷嘴出口处形成的IPA(异丙醇)冷凝物落入晶片保持室。 构成:在半导体衬底干燥设备中,室(100)包括含有半导体衬底的浴(140)和打开和关闭浴的盖(120)。 还包括具有产生用于干燥半导体衬底的醇蒸汽的蒸汽发生器(220)的起泡器(200)和向醇室(100)注入醇蒸汽和携带醇的载气的注射器(240) 蒸汽。 注射器(240)设置有引导装置,其引导在喷射器(240)的出口处的IPA(异丙醇)冷凝物在喷射器内部流动。
    • 97. 发明授权
    • 초음파처리장치 및 이를 사용한 전자부품의 제조방법
    • 초음파처리장치및이를사용한전자부품의제조방초
    • KR100414540B1
    • 2004-01-07
    • KR1020000077445
    • 2000-12-16
    • 샤프 가부시키가이샤
    • 고바야시가즈키오노히토시타구사야스노브히키다토모미마이다유이치
    • H01L21/304
    • H01L21/67051B08B3/123G03F7/428H05K3/0085H05K3/26Y10S134/902
    • To provide an ultrasonic processing device that is capable of effectively carrying out a cleaning operation, a resist-stripping operation, etc. by projecting ultrasonic uniformly over an entirety of the ultrasonic processing target region by means of ultrasonic oscillation elements each having a width smaller than an ultrasonic processing target region of a processing object, as well as to provide an electronic parts fabrication method using the foregoing device, a plurality of ultrasonic oscillation elements are arranged so as to planarly extend in a glass substrate transport direction and in a glass substrate width direction, and projected figures obtained by projecting said ultrasonic oscillation elements to a plane perpendicular to the glass substrate transport direction form a single belt-like region of a width exceeding a width of the ultrasonic processing target region. The foregoing arrangement causes ultrasonic-projected regions of the ultrasonic oscillation elements to partly overlap each other on a surface of the glass substrate when the glass substrate is transported by transport rollers in the transport direction, thereby enabling ultrasonic projection over the complete entirety of the ultrasonic processing target region.
    • 本发明提供一种超声波处理装置,该超声波处理装置能够利用超声波振动元件将超声波均匀地投射到整个超声波处理对象区域,从而能够有效地执行清洁操作,抗蚀剂剥离操作等,所述超声波振动元件的宽度小于 处理对象物的超声波加工对象部位,以及使用该装置的电子部件的制造方法,多个超声波振动元件配置成在玻璃基板的输送方向和玻璃基板的宽度方向 并且通过将所述超声波振荡元件投影到垂直于玻璃基板传送方向的平面而获得的投影图形成宽度超过超声波处理目标区域的宽度的单个带状区域。 根据上述结构,通过输送辊在输送方向上输送玻璃基板时,超声波振动元件的超声波投射区域在玻璃基板的表面上一部分重叠,能够超声波投射到整个超声波 处理目标区域。
    • 99. 发明授权
    • 화학 기계 연마 후 반도체 웨이퍼의 보관 방법
    • 화학기계연마후반도체웨이퍼의보관방법
    • KR100401354B1
    • 2003-10-11
    • KR1020000015039
    • 2000-03-24
    • 르네사스 일렉트로닉스 가부시키가이샤
    • 아오키히데미츠야마사키신야
    • H01L21/302
    • H01L21/02074H01L21/67057Y10S134/902
    • Wafer storage during time between completion of CMP and start of cleaning process comprises exposing the polished wafer to water which is treated to reduce oxidation effects on the wafer, caused by oxidizing agent contained in an abrasive used during CMP. Independent claims are also included for: (a) an apparatus (40) to store the polished wafer (20) which comprises a water tank (42), a pure water supply pipe (44), a recycling apparatus with return pipe (52), pump (49) and filter (50), and a discharge drain (48); and (b) a process storage of the wafer by keeping it immersed in pure water, to which an anticorrosion agent is added, preventing chemical attack of the metallic wiring of the wafer.
    • 在完成CMP和开始清洁过程之间的时间期间的晶片存储包括将抛光的晶片暴露于水中,该水被处理以减少由在CMP期间使用的研磨剂中包含的氧化剂引起的对晶片的氧化作用。 独立权利要求还包括:(a)储存抛光晶片(20)的设备(40),该抛光晶片包括水箱(42),纯水供应管(44),具有回流管(52)的回收装置, ,泵(49)和过滤器(50)以及排放排水管(48); 和(b)通过将晶片保持在添加有防腐蚀剂的纯水中来保存晶片的过程,从而防止晶片的金属布线的化学侵蚀。
    • 100. 发明授权
    • 기판세정건조장치,기판세정방법및기판세정장치
    • 기판세정건조장치,기판세정방법및기판세정장치
    • KR100390545B1
    • 2003-09-26
    • KR1019960062257
    • 1996-12-06
    • 도쿄엘렉트론가부시키가이샤
    • 신도나오키가미카와유지모쿠오쇼리구마가이요시오
    • H01L21/304
    • H01L21/67028Y10S134/902
    • A substrate washing and drying apparatus comprising a processing section for holding wafers, to which process solution to wash and vapor for drying the wafers are introduced, a supply/discharge port for introducing solution to the process section, and discharging the solution from the process section, a solution supply mechanism for selecting one from a plurality of kinds of solution, a drying vapor generation section having a heater for generation vapor for drying, a discharging solution mechanism having an opening for rapidly discharging the solution from the processing section, resistivity detecting means for detecting a resistivity value of the process solution, and a controller for controlling the supply of solution to the process section based on the resistivity value detected by the resistivity detecting means.
    • 1。一种基板清洗干燥装置,其特征在于,具备:导入晶片的处理部,其导入清洗处理液和干燥晶片的蒸气;供给排出口,用于向处理部导入溶液;排出处理部的溶液 ,用于从多种溶液中选择一种溶液的溶液供应机构,具有用于产生干燥用蒸气的加热器的干燥蒸气产生部,具有用于从处理部快速排出溶液的开口的排出溶液机构,电阻率检测部件 用于检测处理溶液的电阻率值;以及控制器,用于基于由电阻率检测装置检测的电阻率值来控制向处理部分的溶液供应。