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91. 发明公开

KR1020060025586A 다이나믹 온도 제어를 가지는 기판 지지대 无效
标题翻译：具有动态温度控制的基板支持
公开(公告)号：KR1020060025586A
公开(公告)日：2006-03-21
申请号：KR1020057025443
申请日：2004-06-28
申请人： 램 리써치 코포레이션
发明人： 스티거로버트제이
IPC分类号： H01L21/306
CPC分类号： F27D5/0037 , C23C16/4586 , C23C16/466 , H01J37/321 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A substrate support (40) useful for a plasma processing apparatus includes a metallic heat transfer member (48) and an overlying electrostatic chuck (50) having a substrate (70) support surface. The heat transfer member (48) includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate (70) temperature during plasma processing.
摘要翻译：可用于等离子体处理设备的衬底支撑件（40）包括金属传热构件（48）和具有衬底（70）支撑表面的上覆静电吸盘（50）。传热构件（48）包括一个或多个通道，液体通过该通道循环以加热和/或冷却传热构件。传热构件具有低的热质量，并且可以通过液体快速加热和/或冷却到所需的温度，从而在等离子体处理期间快速地改变衬底（70）的温度。

92. 发明公开

KR1020050106506A 반도체처리용의 기판유지구조 및 플라즈마 처리장치 有权
标题翻译：用于半导体处理的基板保持结构和等离子体处理装置
公开(公告)号：KR1020050106506A
公开(公告)日：2005-11-09
申请号：KR1020057016665
申请日：2003-12-26
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 이케다다로 , 다나카스미 , 야마모토가오루
IPC分类号： H01L21/3065
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831 , Y10T279/23
摘要： A substrate holding structure (50) for semiconductor processing, comprising a placing table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein air conditioning spaces (507) for storing the fluid used as a heat exchange medium are formed in the placing table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the placing table (51), and flow passages (505, 506) feeding or discharging the heat exchange medium fluid to or from the air conditioning spaces (507) are formed in the transmission path (502).
摘要翻译：一种用于半导体处理的衬底保持结构（50），包括用于放置处理室（20）中的处理衬底（W）的放置台（51），其中用于存储用作热量的流体的空调空间（507）交换介质形成在放置台（51）中，设置导电传输路径（502）以将高频电力引导到放置台（51），以及供给或排出热交换介质的流路（505,506）到达或来自空调空间（507）的流体形成在传输路径（502）中。

93. 发明授权

KR100458424B1 플라즈마 처리장치 有权
标题翻译：空值
公开(公告)号：KR100458424B1
公开(公告)日：2004-11-26
申请号：KR1020017013151
申请日：2000-04-14
申请人： 도쿄엘렉트론가부시키가이샤 , 엔지케이 인슐레이터 엘티디
发明人： 가와카미사토루 , 이와부치가츠히코 , 구와지마료 , 우시코시류스케 , 야마다나오히토 , 가와지리데츠야
IPC分类号： H01L21/205
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/46 , H01J2237/2001
摘要： 플라즈마 처리장치에 있어서, 피처리 기판(W)의 온도 제어가 개선된다. 대략 원통 형상을 가지고 세라믹 재료로 이루어지는 지지부재(26)가 처리실(10)에 설치된다. 지지부재(26)의 상단부는 재치대(24)의 이면(24b)에 고체상태 접합에 의해 밀폐되어 접합된다. 지지부재(26)의 하단부는 하부 냉각 재킷(jacket)(90) 및 O링(92, 96)을 개재하여 처리실(10)의 저부(10b)에 밀폐되어 접속된다. 지지부재(26)의 안쪽에 형성된 대기실(38)에, 원판형의 알루미늄 블록에 의해 형성된 냉각 재킷(40)이 설치된다. 냉각 재킷(40)은 열전도성 시트(sheet) 부재(42)를 개재하여 재치대(24)의 이면(24a)에 부착된다.
摘要翻译：在等离子体处理装置中，提高了待处理基板W的温度控制。在处理室10中设置具有大致圆筒形状的陶瓷制的支撑构件26.支撑构件26的上端通过固态键合气密地连接到放置台24的后表面24b。支撑构件26的下端经由下部冷却套90和O形环92,96气密地连接到处理室10的底部。在大气中设置由盘状铝块制成的冷却套40 腔38形成在支撑构件26内部。冷却套40通过导热片构件42安装到放置台24的后表面24b。

94. 发明授权

KR100419585B1 이온주입시스템용이온빔실드 失效
公开(公告)号：KR100419585B1
公开(公告)日：2004-07-23
申请号：KR1019980705134
申请日：1997-02-14
申请人： 액셀리스 테크놀로지스, 인크.
发明人： 브라케쥬리안지
IPC分类号： H01J27/02
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705 , H01L21/67069 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838
摘要： An ion implantation system is described having an ion source coupled to a process chamber, and a workpiece handling assembly having a workpiece support that is mounted within the process chamber. The system implants ions into a photoresist coated workpiece to change the conductivity of the workpiece. An ion beam shield is provided that is positioned between the ion source and the workpiece support during processing to prevent outgassed photoresist from coating portions of the ion source.
摘要翻译：描述了离子注入系统，其具有耦合到处理室的离子源以及具有安装在处理室内的工件支撑件的工件处理组件。该系统将离子注入光刻胶涂覆的工件中以改变工件的导电性。提供离子束屏蔽，其在处理期间定位在离子源与工件支撑件之间以防止离开光致抗蚀剂涂覆离子源的部分。

95. 发明授权

KR100425445B1 플라즈마 에칭 챔버 및 이를 이용한 포토마스크 제조 방법 失效
标题翻译： 플라즈마에칭챔버및이를이용한포토마스크제조방플
公开(公告)号：KR100425445B1
公开(公告)日：2004-03-30
申请号：KR1020010022068
申请日：2001-04-24
申请人： 삼성전자주식회사
发明人： 이정윤 , 김진민 , 정해영 , 노영화 , 윤상준 , 조성용
IPC分类号： H01L21/3065
CPC分类号： H01J37/32724 , G03F1/80 , H01J37/32009 , H01J2237/2001
摘要： A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.
摘要翻译：在用于制造光掩模的蚀刻工艺中使用的等离子蚀刻设备的等离子蚀刻室以及使用该等离子蚀刻设备制造光掩模的方法。等离子体蚀刻室包括具有用于支撑光掩模基板的支撑表面和围绕支撑表面的顶表面的电极，沿着支撑表面的周边安装的传热元件以及用于向传热元件供热的加热器。在用于制造光掩模的方法中，遮光层形成在透明基板上。在遮光层上形成光致抗蚀剂层图案以部分地暴露遮光层。在保持透明基板的周缘的至少一部分的温度高于温度的状态下，使用具有光致抗蚀剂层图案作为蚀刻掩模的等离子体来蚀刻遮光层以形成遮光层图案在透明基板的中心。

96. 发明授权

KR100408259B1 공정챔버_ 失效
公开(公告)号：KR100408259B1
公开(公告)日：2004-01-24
申请号：KR1019980047186
申请日：1998-11-04
申请人： 엘지디스플레이 주식회사
发明人： 최창훈 , 박만종 , 이인원
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , C23C14/50 , C23C16/4583 , H01J2237/2001
摘要： A process chamber for processing a substrate by conducting plasma enhanced chemical vapor deposition or sputtering includes a stage. The stage has a main base member that is constructed to have projections and a recessed portion between the projections, and a substrate mounting member which is constructred to fit between the projections of the main base member and such that the a portion of the substrate mounting member is located within the recessed portion and a portion of the substrate mounting member protrudes from the main base member. The substrate mounting member is easily removed from the main base member while also being reliably fixed and positioned in the main base member by the projections. As a result of this construction, the substrate mounting member can be removed from the process chamber independently of the main base member and in a manner similar to how the substrate is removed after processing.
摘要翻译：用于通过进行等离子体增强化学气相沉积或溅射来处理基板的处理室包括台架。平台具有构造成在突起之间具有突起和凹陷部分的主基体构件和构造成配合在主基体构件的突起之间并且使得基体安装构件的一部分位于所述凹陷部分内，并且所述基板安装构件的一部分从所述主基座构件突出。基板安装构件容易从主基体构件移除，同时通过突起也可靠地固定并定位在主基体构件中。作为这种结构的结果，基板安装构件可以独立于主基板构件而从处理室移除，并且以类似于处理之后如何移除基板的方式移除。

97. 发明公开

KR1020040005822A 배치형 이온 주입 시스템에 있어서의 웨이퍼의 배면측가스 냉각용 장치 无效
标题翻译：批量式离子注入系统中用于冷却晶片背面气体的装置
公开(公告)号：KR1020040005822A
公开(公告)日：2004-01-16
申请号：KR1020037004031
申请日：2001-08-23
申请人： 액셀리스 테크놀로지스, 인크.
发明人： 칩맨데이비드제임스 , 라고스브라이언크리스토퍼 , 미첼로버트존 , 로젠게리제이 , 스톤데일케이쓰
IPC分类号： H01L21/265
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001
摘要： 본 발명은 회전 또는 스피닝 배치형 이온 주입기 처리 디스크(282, 380)에서 이온이 주입되는 배치형 이온 주입기 가공편의 배면측에 고정 소스로부터 냉각 가스(302)를 공급하는 장치를 제공한다. 냉각 가스(302)는 가공편으로부터 처리 디스크(282, 380)에의 개선된 열전달을 제공하며, 이것은 처리 디스크로부터 열을 제거하기 위하여 처리 디스크의 통로를 통한 냉각 유체의 순환과 유리하게 연합될 수도 있다. 본 발명은 고정 하우징(210)으로부터 배치형 이온 주입기 처리 디스크 (282, 380)를 회전시키는 회전 축(270) 내의 가스 챔버에 냉각 가스(302)를 전달하기 위해 채택된 회전 공급 관통부(300)를 추가로 포함한다. 게다가, 가공편의 전면측이 이온 주입되는 진공 상태로부터 가공편의 배면측에 공급된 냉각 가스(302)를 밀봉시키는 밀봉 장치를 구비한다.

98. 发明授权

KR100385010B1 받침대와베이스사이의개선된열전달방법 失效
公开(公告)号：KR100385010B1
公开(公告)日：2003-08-25
申请号：KR1019950028562
申请日：1995-09-01
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 존에프.캐머슨
IPC分类号： H01L21/306
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/6831 , Y10T279/23
摘要： The disclosure relates to an etch chamber (10) which generally includes a conventional outer enclosure wall (12), a base (14) on which the enclosure wall (12) is supported, and a cover (16) received over the upper end of the enclosure wall (12). The enclosure wall (12), base (14) and cover (16) form a vacuum enclosure (18) in which a process environment such as an etch plasma may be maintained. At least one gas inlet (20) is ported to the vacuum enclosure (18), and an outlet (22) is ported from the enclosure (18), through the chamber base (14), to a vacuum pump. A substrate support member (26) includes a pedestal (32) and conductive member (30). The conductive member is cooled by the passage of a coolant therethrough, and a heat transfer enhancing fluid is flowed into the interface (52) between the pedestal and the conductive member to increase the heat transfer from the pedestal to the conductive member.
摘要翻译：本发明涉及一种蚀刻室（10），该蚀刻室通常包括常规的外壳壁（12），其上支撑有外壳壁（12）的基座（14）以及容纳在其上端的盖（16）外壳壁（12）。外壳壁（12），基座（14）和盖（16）形成真空外壳（18），其中可保持诸如蚀刻等离子体之类的工艺环境。至少一个气体入口（20）被引导至真空外壳（18），并且出口（22）从外壳（18）通过腔室基座（14）被引导至真空泵。衬底支撑构件（26）包括基座（32）和导电构件（30）。导热部件通过冷却剂通过而被冷却，并且传热促进流体流入基座和导电部件之间的界面（52），以增加从基座到导电部件的热传递。＆LT; MATH＆GT;

99. 发明授权

KR100263405B1 처리장치의 제어방법 失效
标题翻译：治疗装置控制方法
公开(公告)号：KR100263405B1
公开(公告)日：2000-09-01
申请号：KR1019940015831
申请日：1994-07-02
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 고미노미쓰아키
IPC分类号： H01L21/66
CPC分类号： C23C16/463 , C23C14/541 , C23C14/564 , C23C16/4401 , C23C16/46 , C23C16/466 , H01J2237/2001
摘要： 본 발명은, 소정의 감압분위기로 조정가능한 처리실과, 처리실내에 설치되며, 피처리체를 얹어놓는 얹어놓는대와, 얹어놓는대에 설치된 냉매 수용부와, 냉매수용부에 냉매를 공급하고, 냉매수용부로부터 냉매를 배출하는 냉매공급부를 포함하는 처리장치를 제어하는 방법으로서, 냉매공급계로부터 냉매수용부로 공급된 냉매의 열전달을 이용하여 얹어놓는대를 냉각함으로써 피처리체의 온도를 강하시키면서 피처리체에 처리를 행하는 공정과, 처리장치내의 온도를 상승시키는 때에, 처리장치를 구성하는 부재에 있어서의 수분을 트랩하는 미소 간극부 근방을 가열하는 공정을 구비하는 처리장치의 제어방법을 제공한다.

100. 发明公开

KR1020000035303A 표면 처리 방법 및 장치 有权
标题翻译：表面处理方法和表面处理装置
公开(公告)号：KR1020000035303A
公开(公告)日：2000-06-26
申请号：KR1019990049242
申请日：1999-11-08
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 고바야시야스오 , 미야타니고타로 , 마에카와가오루
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/2001 , H01L21/02063 , H01L21/31116
摘要： PURPOSE: A surface treatment method and a surface treatment apparatus are provided which resolve the problems of the prior art oxide-film removing method described above. CONSTITUTION: A subject (W) which is to be treated and on which an oxide film is formed, is carried into a treatment vessel (10), and the treatment vessel is maintained under vacuum. A mixture gas of N2 gas and H2 gas is introduced into a plasma generation section (30), plasma is generated, and activated gas species of the N2 and H2 gases are formed. The activated gas species are caused to flow toward the subject, and an NF3 gas is added to the activated gas species and activated to generate an activated gas of N2, H2 and NF3 gases. The subject (W) is cooled to not higher than a predetermined temperature by a cooling means and reacted with the activated gas of NF3 gas. The oxide film is thus degenerated into a reactive film. When the supply of N2, H2 and NF3 gases into the treatment vessel (10) is stopped, the subject is heated up to a predetermined temperature by a heating means, and the reactive film is sublimated and eliminated. Thus, a surface treatment method for removing the oxide film from the subject and a surface treatment apparatus for doing the same are disclosed. Furthermore, the surface treatment apparatus and other treatment apparatuses constitute a cluster system capable of carrying the subject in an unreactive atmosphere.
摘要翻译：目的：提供一种解决上述现有技术的氧化膜去除方法的问题的表面处理方法和表面处理装置。构成：待处理的对象（W），其上形成有氧化膜的被检体（W）被输送到处理容器（10）中，并将处理容器保持在真空下。将N2气和H2气的混合气体引入等离子体产生部分（30）中，产生等离子体，形成N 2和H 2气体的活化气体物质。使活性气体物质流向受试者，并将NF 3气体加入到活化气体物质中并活化以产生N 2，H 2和NF 3气体的活化气体。使受试者（W）通过冷却装置冷却至不高于预定温度，并与NF 3气体的活性气体反应。氧化膜因此退化为反应性膜。当停止向处理容器（10）供给N 2，H 2和NF 3气体时，通过加热装置将被摄体加热到预定温度，并且将活性膜升华并消除。因此，公开了从被检体除去氧化膜的表面处理方法和进行该处理的表面处理装置。此外，表面处理装置和其他处理装置构成能够在无反应气氛下携带被检者的集群系统。

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