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1. 发明公开

KR1020110079285A 반도체 소자의 제조방법 无效
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020110079285A
公开(公告)日：2011-07-07
申请号：KR1020090136303
申请日：2009-12-31
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： G02F1/133 , H01L27/108
CPC分类号： H01L27/10829 , G02F1/13306
摘要： PURPOSE: A method for manufacturing a semiconductor device is provided to efficiently adjust the shape and depth of a buried oxide in a 1T RAM DDI product. CONSTITUTION: A method for manufacturing a semiconductor device comprises steps of: forming a first and a second trenches on a substrate; gap filling an insulation layer(120) between the first and the second trenches; forming an isolation insulation layer on the first trench by planarizing the insulation layer; forming a residual insulation layer within the first trench by removing some parts of isolation insulation layer; and exposing the lower substrate of the first trench by removing the residual insulation layer using a hard mask.
摘要翻译：目的：提供一种用于制造半导体器件的方法，以有效地调整1T RAM DDI产品中的掩埋氧化物的形状和深度。构成：制造半导体器件的方法包括以下步骤：在衬底上形成第一和第二沟槽; 间隙填充第一和第二沟槽之间的绝缘层（120）; 通过平坦化绝缘层在第一沟槽上形成隔离绝缘层; 通过去除隔离绝缘层的一些部分在第一沟槽内形成残余绝缘层; 以及通过使用硬掩模去除所述残留绝缘层来暴露所述第一沟槽的下基板。

2. 发明公开

KR1020110078558A 씨모스 이미지 센서 소자의 제조 방법 无效
标题翻译：制造CMOS图像传感器装置的方法
公开(公告)号：KR1020110078558A
公开(公告)日：2011-07-07
申请号：KR1020090135402
申请日：2009-12-31
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146
CPC分类号： H01L27/1469 , H01L27/14636
摘要： PURPOSE: A method for manufacturing CMOS image sensor device is provided to prevent a bridge between adjacent pins due to misalignment in bonding by removing the upper part of a boned copper pin to prevent a bridge between the adjacent pins from being bridged. CONSTITUTION: A photo diode(204) is formed in a first substrate. A transistor(104) for controlling the photo diode is formed in the second substrate. A trench(122) is penetrated through a first interlayer insulating film(106), a first protective film(108), and the substrate. A plurality of contacts(105) are penetrated through the first interlayer insulating film and the first protective film.
摘要翻译：目的：提供一种用于制造CMOS图像传感器装置的方法，以通过去除铜骨头的上部来防止在接合中的未对准的相邻引脚之间的桥接，以防止相邻引脚之间的桥接桥接。构成：在第一衬底中形成光电二极管（204）。用于控制光电二极管的晶体管（104）形成在第二衬底中。沟槽（122）穿过第一层间绝缘膜（106），第一保护膜（108）和基板。多个触点（105）穿过第一层间绝缘膜和第一保护膜。

3. 发明公开

KR1020110024472A 이미지 센서 및 그 제조방법 无效
标题翻译：图像传感器及其制造方法
公开(公告)号：KR1020110024472A
公开(公告)日：2011-03-09
申请号：KR1020090082480
申请日：2009-09-02
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146
CPC分类号： H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1469
摘要： PURPOSE: An image sensor and a manufacturing method thereof are provided to implement an image with high quality by forming a vertical photo sensor on the upper side of a readout circuit. CONSTITUTION: A first silicon pattern and a second silicon pattern are formed on an interlayer dielectric layer to be respectively connected to a first wiring and a second wiring. A first photo sensor(231) is formed on an area corresponding to a first depth of the first silicon pattern. A second photo sensor is formed on the area corresponding to a second depth shallower than the first depth of the first silicon pattern. A third photo sensor(241) is formed on an area corresponding to a third depth of the second silicon pattern. A fourth photo sensor is formed on an area corresponding to a fourth depth swallower than the third depth of the second silicon pattern. A third wiring(123) and a fourth wiring are connected to the second photo sensor and the fourth photo sensor respectively.
摘要翻译：目的：提供一种图像传感器及其制造方法，通过在读出电路的上侧形成垂直光传感器来实现高质量的图像。构成：第一硅图案和第二硅图案形成在层间电介质层上，以分别连接到第一布线和第二布线。第一光传感器（231）形成在与第一硅图案的第一深度对应的区域上。在对应于比第一硅图案的第一深度浅的第二深度的区域上形成第二光传感器。在与第二硅图案的第三深度对应的区域上形成第三光传感器（241）。第四光传感器形成在与第二硅图案的第三深度相对应的第四深度吞咽的区域上。第三布线（123）和第四布线分别连接到第二光传感器和第四光传感器。

4. 发明公开

KR1020100080235A 씨모스 이미지센서 및 그 제조방법 无效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：KR1020100080235A
公开(公告)日：2010-07-08
申请号：KR1020080138882
申请日：2008-12-31
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/1462 , H01L27/14683 , H01L27/14685
摘要： PURPOSE: A complementary metal-oxide-semiconductor image sensor and a method for manufacturing the same are provided to improve light receiving efficiency by reducing the thickness of pre-metal dielectric(PMD) layer including a metal wiring. CONSTITUTION: A first PMD layer(100) is formed on a semiconductor substrate(10). A first contact plug(200) passes through the first PMD layer and is electrically connected with a semiconductor element. A first metal wiring is formed on the first PMD layer. A second PMD layer(400) is formed on the first PMD layer. A second contact plug(500) passes through the first PMD layer and the second PMD layer and is electrically connected with the semiconductor element. A second metal wiring is formed on the second PMD layer.
摘要翻译：目的：提供一种互补金属氧化物半导体图像传感器及其制造方法，通过减小包括金属布线的金属前介电层（PMD）层的厚度来提高光接收效率。构成：在半导体衬底（10）上形成第一PMD层（100）。第一接触插塞（200）穿过第一PMD层并与半导体元件电连接。在第一PMD层上形成第一金属布线。在第一PMD层上形成第二PMD层（400）。第二接触插塞（500）穿过第一PMD层和第二PMD层并与半导体元件电连接。在第二PMD层上形成第二金属布线。

5. 发明公开

KR1020100036709A 반도체 소자의 ＣＭＰ 장치 无效
标题翻译：半导体器件的化学机械抛光装置
公开(公告)号：KR1020100036709A
公开(公告)日：2010-04-08
申请号：KR1020080096063
申请日：2008-09-30
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B37/04
摘要： PURPOSE: A CMP device of a semiconductor device is provided to improve yield by stably maintaining the flatness regardless of influence of the kind and density of a metal structure and a wafer region. CONSTITUTION: A head includes a plurality of airbags. A wafer is mounted on the head. A plurality of air supply pipes(410,420,430) supplies air to the airbag. A plurality of air valves is installed in an air supply tube, respectively. A plurality of EPD sensors is installed inside the pad in order to correspond to a polishing region of the pad and senses the polishing degree of the wafer. A controller(100) generates a control signal by receiving a sensing signal from the EPD sensor and transmits the control signal to the air valve.
摘要翻译：目的：提供半导体器件的CMP器件，以便不管金属结构和晶片区域的种类和密度的影响如何，通过稳定地维持平坦度来提高产量。构成：头部包括多个安全气囊。晶片安装在头上。多个供气管道（410,420,430）向气囊供应空气。多个空气阀分别安装在供气管中。多个EPD传感器安装在焊盘内部，以便对应于焊盘的抛光区域并感测晶片的抛光度。控制器（100）通过接收来自EPD传感器的感测信号产生控制信号，并将该控制信号发送到空气阀。

6. 发明公开

KR1020090054544A 금속 배선 공정 无效
标题翻译：金属线制造工艺
公开(公告)号：KR1020090054544A
公开(公告)日：2009-06-01
申请号：KR1020070121254
申请日：2007-11-27
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L21/28 , H01L21/768
CPC分类号： H01L21/288 , C23C18/165 , C23C18/54 , H01L21/76874 , H01L21/76877
摘要： A metal wiring process is provided to simplify a wiring process by forming the wiring made of the single metal like copper without using an additional device like a plating device. A diffusion barrier layer(160) is formed in a layer to form a metal wiring. A first metal layer(165) is formed by using the first metal with the oxidation potential higher than the hydrogen standard potential. The metal wiring is formed by inducing the substitution reaction of the first metal and the second metal by exposing the first metal layer in the electrolyte solution of the first metal with the lower ionization tendency than the first metal and the lower oxidation potential than the hydrogen standard potential. A diffusion preventing layer includes at least one of Ta and TaN.
摘要翻译：提供了一种金属布线工艺以通过在不使用诸如电镀装置的附加装置的情况下形成由单一金属如铜制成的布线来简化布线处理。扩散阻挡层（160）形成在一层中以形成金属布线。通过使用氧化电位高于氢标准电位的第一金属形成第一金属层（165）。通过以比第一金属低的电离倾向比第一金属低的电离溶液暴露第一金属的电解质溶液中的第一金属层和比氢标准更低的氧化电位，引发第一金属和第二金属的取代反应来形成金属布线潜在。扩散防止层包括Ta和TaN中的至少一种。

7. 发明授权

KR101380311B1 이미지 센서 및 그 제조 방법 有权
标题翻译：一种图像传感器及其制造方法
公开(公告)号：KR101380311B1
公开(公告)日：2014-04-02
申请号：KR1020120051273
申请日：2012-05-15
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14643 , H01L27/14685
摘要： 화소 영역과 로직 영역을 갖는 이미지 센서의 제조 방법은 상기 화소 영역에 해당하는 기판 내에 포토다이오드를 형성하는 단계; 상기 기판 상에 제1 층간 절연층을 형성하는 단계; 상기 제1 층간 절연층 상에 제1 정지막을 형성하는 단계; 상기 제1 정지막 상에 절연막을 형성하는 단계; 상기 절연막 상에 제2 정지막을 형성하는 단계; 상기 화소 영역에 위치하는 상기 제2 정지막과 상기 절연막을 선택적으로 식각하여 상기 제1 정지막을 노출하는 적어도 하나의 트렌치(trench)를 형성하는 단계; 상기 적어도 하나의 트렌치를 채우도록 상기 제2 정지막 상에 도전 물질을 형성하는 단계; 및 상기 제2 정지막이 노출될 때까지 상기 도전 물질을 평탄화하여 상기 적어도 하나의 트렌치 내에 제로 배선층을 형성하는 단계를 포함한다.

8. 发明公开

KR1020110079287A 반도체 소자 및 그 제조방법 无效
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020110079287A
公开(公告)日：2011-07-07
申请号：KR1020090136305
申请日：2009-12-31
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/108 , H01L21/8242 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76254 , H01L21/76816
摘要： PURPOSE: A semiconductor device and a manufacturing method thereof are provided to effectively cut off leakages caused by a buried oxide film by using a bottom isolation implant. CONSTITUTION: A substrate(100) comprises the first trench and the second trench. An element isolation film(220) is formed by gap-filling an insulating layer in the second trench. An ion implanting isolation layer(122) is formed at a lower part of the first trench. A capacitor insulating layer(130) is formed in a substrate of a sidewall of the first trench located at an upper side of the ion implanting isolation layer. An upper electrode(140) fills up the first trench.
摘要翻译：目的：提供半导体器件及其制造方法，以通过使用底部隔离植入物来有效地切断由埋入氧化物膜引起的泄漏。构成：衬底（100）包括第一沟槽和第二沟槽。通过间隙填充第二沟槽中的绝缘层形成元件隔离膜（220）。离子注入隔离层（122）形成在第一沟槽的下部。在位于离子注入隔离层的上侧的第一沟槽的侧壁的衬底中形成电容器绝缘层（130）。上电极（140）填满第一沟槽。

9. 发明公开

KR1020100052620A 이미지 센서 및 그 제조 방법 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：KR1020100052620A
公开(公告)日：2010-05-20
申请号：KR1020080111421
申请日：2008-11-11
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146 , H01L27/14 , H01L21/28
CPC分类号： H01L27/14636 , H01L27/14683 , H01L27/14692
摘要： PURPOSE: An image sensor and a method for manufacturing the same are provided to reduce the generation of defect in a photo diode region by etching bonding-silicon with a wet-etching method. CONSTITUTION: Bonding-silicon(120) including a first dopant region(121) and a second dopant region(122) is formed on a substrate(100). A first interlayer insulation layer is formed on the bonding-silicon. A first contact plug(160) is connected to a first metal wiring(101) by passing through the bonding-silicon. A second interlayer insulation layer is formed on the first interlayer insulation layer. A second contact plug(180) is connected to the first dopant region. A second metal wiring(190) is connected to the second contact plug. A color filter layer and a micro lens are formed on the second metal wiring.
摘要翻译：目的：提供一种图像传感器及其制造方法，通过用湿蚀刻法蚀刻粘结硅来减少光电二极管区域中的缺陷的产生。构成：在衬底（100）上形成包括第一掺杂区（121）和第二掺杂区（122）的接合硅（120）。在接合硅上形成第一层间绝缘层。第一接触插塞（160）通过穿过粘合硅而连接到第一金属布线（101）。在第一层间绝缘层上形成第二层间绝缘层。第二接触插塞（180）连接到第一掺杂剂区域。第二金属配线（190）连接到第二接触插头。在第二金属布线上形成滤色器层和微透镜。

10. 发明公开

KR1020100036713A 이미지 센서의 마이크로렌즈 제작 방법 및 이미지 센서 失效
标题翻译：图像传感器和图像传感器微型计算机的制造方法
公开(公告)号：KR1020100036713A
公开(公告)日：2010-04-08
申请号：KR1020080096068
申请日：2008-09-30
申请人： 주식회사 디비하이텍
发明人： 정성훈
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14627
摘要： PURPOSE: A method for manufacturing a microlens of an image sensor and the image sensor are provided to maximize concentration of the image sensor by minimizing a gap between the microlenses. CONSTITUTION: An organic polymer solution is spread on a semiconductor layer of an image sensor. An organic polymer bead layer(80) is formed by condensing the organic polymer solution after spreading the organic polymer solution to an organic polymer micro sphere. An oxide layer is formed on the organic polymer bead layer. The organic polymer bead layer is thermally processed or processed with plasma. A hemi spherical organic polymer microlens is formed by exposing the bottom of the organic polymer bead layer to heat.
摘要翻译：目的：提供一种用于制造图像传感器和图像传感器的微透镜的方法，以通过最小化微透镜之间的间隙来最大化图像传感器的浓度。构成：将有机聚合物溶液铺展在图像传感器的半导体层上。通过在将有机聚合物溶液扩散到有机聚合物微球之后将有机聚合物溶液冷凝来形成有机聚合物珠粒层（80）。在有机聚合物珠粒层上形成氧化物层。有机聚合物珠粒层被热处理或用等离子体处理。半球状有机聚合物微透镜通过将有机聚合物珠粒层的底部暴露于热而形成。

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