专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

KR101097373B1 하향 및 상향 주파수 변환기 有权
标题翻译：频率上/下变频器
公开(公告)号：KR101097373B1
公开(公告)日：2011-12-23
申请号：KR1020110050335
申请日：2011-05-26
申请人： (주)아이앤씨테크놀로지
发明人： 김영진 , 이진영 , 허수영 , 손성영 , 이상엽 , 이정훈 , 장신일
IPC分类号： H03D7/00
CPC分类号： H03D7/165 , H03D7/1441 , H03D7/1458 , H03D7/1466 , H03D2200/0082
摘要： PURPOSE: A frequency up/down converter is provided to obtain the same frequency conversion performance even if the local oscillator signal with a low frequency is used by controlling the frequency signal of a conversion object during a cycle of the local oscillator signal at several times. CONSTITUTION: A frequency down conversion part(410) includes a first mixer(410A) and a second mixer(410B). A local oscillator signal generation part(420) includes a plurality of local oscillator signal generators(421-428). The first mixer includes a plurality of MOS(Metal Oxide Semiconductor) transistors which is connected in parallel to transfer a high frequency signal. The second mixer includes a plurality of MOS transistors which is connected in parallel to transfer the high frequency signal. The local oscillator signal generation part respectively supplies the local oscillator signal of a preset pulse width and phase to the gate of the MOS transistor which is connected in parallel.
摘要翻译：目的：提供频率上/下转换器以获得相同的频率转换性能，即使通过在本地振荡器信号的周期中多次控制转换对象的频率信号来使用低频本地振荡器信号。构成：降频转换部分（410）包括第一混频器（410A）和第二混频器（410B）。本地振荡器信号产生部分（420）包括多个本地振荡器信号发生器（421-428）。第一混频器包括并联连接以传送高频信号的多个MOS（金属氧化物半导体）晶体管。第二混频器包括并联连接以传送高频信号的多个MOS晶体管。本地振荡器信号产生部分分别将与预先设定的脉冲宽度和相位的本地振荡器信号并联连接到并联的MOS晶体管的栅极。

IPRDB

热门服务

关于我们

友情链接

联系方式