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    • 8. 发明专利
    • Redox capacitor and method of manufacturing the same
    • REDOX电容器及其制造方法
    • JP2011097030A
    • 2011-05-12
    • JP2010208802
    • 2010-09-17
    • Semiconductor Energy Lab Co Ltd株式会社半導体エネルギー研究所
    • KURISHIRO KAZUKIOGINO KIYOFUMISAITO YUMIKOSAKATA JUNICHIRO
    • H01G9/00H01G9/025H01G11/02H01G11/46H01G11/56H01G11/84H01L21/822H01L27/04
    • H01G11/02H01G9/038H01G9/22H01G11/28H01G11/56H01G11/68H01G11/70H01G11/84H01L21/02565H01L21/02631H01L28/40Y02E60/13
    • PROBLEM TO BE SOLVED: To provide a redox capacitor usable at a room temperature, and to provide a method of manufacturing the redox capacitor. SOLUTION: An amorphous semiconductor including hydrogen is used as an electrolyte of the redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor, which includes a semiconductor element, such as amorphous silicon, amorphous silicon germanium, and amorphous germanium, is used. Also, as an another example of the amorphous semiconductor including hydrogen, an oxide semiconductor including hydrogen is used. As a typical example, an amorphous semiconductor, which includes a single-component oxide semiconductor, such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide, is used. As an another example of the oxide semiconductor including hydrogen, a multi-component oxide semiconductor is used. Representatively, InMO 3 (ZnO) m is used, (where m>0, and M is one metallic element or a plurality of metallic elements selected from Ga, Fe, Ni, Mn, and Co). COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供可在室温下使用的氧化还原电容器,并提供制造氧化还原电容器的方法。 解决方案:使用包含氢的非晶半导体作为氧化还原电容器的电解质。 作为包括氢的非晶半导体的典型实例,使用包括诸如非晶硅,非晶硅锗和无定形锗的半导体元件的非晶半导体。 此外,作为包括氢的非晶半导体的另一个实例,使用包括氢的氧化物半导体。 作为典型的例子,使用包含氧化锌,氧化钛,氧化镍,氧化钒,氧化铟等单组分氧化物半导体的非晶半导体。 作为包含氢的氧化物半导体的另一示例,使用多组分氧化物半导体。 代表性地,使用InMO 3(ZnO) m (其中m> 0和M是一种金属元素或多个选自Ga,Fe,Ni的金属元素 ,Mn和Co)。 版权所有(C)2011,JPO&INPIT
    • 10. 发明专利
    • Ionic functional group-containing epoxy resin
    • 离子官能团含环氧树脂
    • JP2011046915A
    • 2011-03-10
    • JP2010028797
    • 2010-02-12
    • Jsr CorpJsr株式会社
    • MATSUMOTO KOZOENDO TAKESHI
    • C08G59/22C08G59/50C08J5/22H01B1/06H01G9/025H01M10/0565
    • Y02E60/13
    • PROBLEM TO BE SOLVED: To provide a flexible resin having a high ionic conductivity by an easy method of production.
      SOLUTION: This resin is provided by reacting (A) an epoxy compound expressed by formula (1): X-(-OR
      1 -)
      n -Y [wherein, X is a group having an epoxy group; Y is an ionic functional group; R
      1 is 2-20C substituted or non-substituted alkylene and (n) is an integer of 1 to 100], (B) a compound having ≥2 epoxy groups, and (C) a compound expressed by formula (2): R
      2 R
      3 N-R
      6 -(-OR
      7 -)
      m -OR
      8 -NR
      4 R
      5 [wherein, R
      2 to R
      5 are each independently H, or 1-20C substituted or non-substituted alkyl, but at least three of the R
      2 to R
      5 are each H; R
      6 , R
      8 are each independently methylene, or 2-20C substituted or non-substituted alkylene; R
      7 is 2-20C substituted or non-substituted alkylene; and (m) is an integer of 9 to 100].
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:通过简单的生产方法提供具有高离子电导率的柔性树脂。 解决方案:该树脂通过使(A)由式(1)表示的环氧化合物:X - ( - OR - ) - 其中,X是具有环氧基的基团; Y是离子官能团; R 2为2-20C取代或未取代的亚烷基,(n)为1〜100的整数],(B)具有≥2个环氧基的化合物,(C)表示的化合物 通过式(2):R 2 R 3 NR - ( - 或 其中,R SP2与R 4 > 5 各自独立地为H或1-20C取代或未取代的烷基,但R SP 3至R 5中的至少3个为H ; R SP 6,各自独立地是亚甲基,或2-20C取代或未取代的亚烷基; R 2是2-20C取代或未取代的亚烷基; 和(m)为9〜100的整数]。 版权所有(C)2011,JPO&INPIT