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1. 发明专利

JP3142856B2 失效
公开(公告)号：JP3142856B2
公开(公告)日：2001-03-07
申请号：JP9887890
申请日：1990-04-13
IPC分类号： G05F1/10 , G01R1/28

2. 发明专利

JP2876996B2 失效
公开(公告)号：JP2876996B2
公开(公告)日：1999-03-31
申请号：JP21149994
申请日：1994-09-05
申请人： DENSOO KK
发明人： KINOSHITA KENJI , SHIRAI KATSUHIKO , HARADA TAKASHI
IPC分类号： G01P3/481 , G01D5/244 , G01D5/245 , G01R1/28 , G01R19/165 , H03K5/08 , H03K5/1252

3. 发明专利

JP2782568B2 失效
公开(公告)号：JP2782568B2
公开(公告)日：1998-08-06
申请号：JP6201092
申请日：1992-03-18
申请人： ETSUSE JI ETSUSE TOMUSON MIKUROERETSUTORONIKA SPA
发明人： MATSUSHIMIRIAANO BURANBITSURA , UANNI HORETSUTO
IPC分类号： G05F3/26 , G01R1/28 , G05F3/30

4. 发明专利

JPH10505934A 失效
公开(公告)号：JPH10505934A
公开(公告)日：1998-06-09
申请号：JP50647897
申请日：1996-07-11
IPC分类号： G01R1/28 , G01R19/00 , G01R19/165 , G01R31/36 , G05F1/56 , G05F3/24 , H03M1/74

5. 发明专利

JPH0989963A DC HIGH VOLTAGE GENERATING DEVICE AND ITS FAILURE IDENTIFYING DEVICE 失效
公开(公告)号：JPH0989963A
公开(公告)日：1997-04-04
申请号：JP23962995
申请日：1995-09-19
申请人： TOSHIBA CORP
发明人： NAGATA HIROKO
IPC分类号： G01R1/28 , G01R31/00 , H02M3/07 , H02M7/10 , H05H5/02
摘要： PROBLEM TO BE SOLVED: To provide a DC high voltage generating device and its failure identifying device in which a failure generating position can be easily specified, even when an abnormality occurs, without opening a metal vessel. SOLUTION: A multistage voltage double rectifier circuit 1 is housed in a metal vessel 2 having SF 6 gas sealed therein. An output terminal 14, an input terminal 13, and secondary winding terminals 5, 6 are provided on the outside of the metal vessel 2. The highest potential terminal 8 of the multistage voltage double rectifier circuit 1 is connected to the output terminal 14. Both ends of the secondary winding 4 of a boosting transformer 3 is connected to the secondary winding terminals 5, 6. The secondary winding terminals 5, 6 are short-circuited by a conductor, and an AC power source for failure judgment is connected between the secondary winding terminal 6 and the ground. The frequency and impedance of the input current are measured, whereby a ground position and a failing capacitor are examined.

6. 发明专利

JPH0926440A VOLTAGE REFERENCE CIRCUIT AND VOLTAGE DETECTING CIRCUIT USING VOLTAGE REFERENCE CIRCUIT THEREOF 失效
公开(公告)号：JPH0926440A
公开(公告)日：1997-01-28
申请号：JP29651895
申请日：1995-11-15
申请人： SGS THOMSON MICROELECTRONICS
发明人： HIYUU MATSUKINTAIAA
IPC分类号： G01R17/00 , G01R1/28 , G01R19/165 , G05F1/56 , G05F3/24 , G11C16/06 , G11C17/00
摘要： PROBLEM TO BE SOLVED: To positively operate a voltage detection circuit even while power is in transition by obtaining a reference circuit for generating a reference voltage which is at least constantly higher than a stable reference value. SOLUTION: While a circuit is being activated, a reference voltage is retained to be at a starting voltage level and a reference circuit is constituted so that the reference voltage is generated at a reference circuit point. For example, a voltage Vcc increases to a constant level during an initialization stage by a lock signal generator 76 of a band gap reference circuit. The lock signal is maintained to be low until the voltage Vcc reaches the certain level and becomes high later. While the lock signal is low, lock transistors 80 and 82 are turned on and a reference voltage VBC follows a power supply voltage. When the lock signal becomes high, a P-channel lock transistor is turned off and the reference voltage VBC becomes stable.

7. 发明专利

JPH08285682A REFERENCE VOLTAGE GENERATING CIRCUIT 失效
公开(公告)号：JPH08285682A
公开(公告)日：1996-11-01
申请号：JP8983595
申请日：1995-04-14
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： OKITA ATSUSHI , SAKAMOTO SHINJI , SUGINO SATOSHI
IPC分类号： G01B11/00 , G01C3/06 , G01J1/02 , G01R1/28 , G01R19/165 , G01V8/12 , G05F3/26 , H03F1/30
摘要： PURPOSE: To restrain fluctuation of an output voltage due to the change in the ambient temperature. CONSTITUTION: The MOSFET 22c on the output side on one hand out of two current mirror circuits becomes the current source of the MOSFET 22a on the input side of the current mirror circuit on the other hand. Resistance R3 and R4 are connected in series to the MOSFETs 21b, 22b on the output side of both the current mirror circuits, and a constant voltage is applied to the connecting point of the resistances R3 , R4 . A constant current is passed from a constant current source to the MOSFET 22a on the input side of the current mirror circuit on one hand. Since the current is passed from a constant current source through the current mirror circuit, even if the ambient temperature changes, both end voltage of the resistances R3 , R4 is high in stability with regard to the temperature change, and two voltages being stable to the temperature change can be obtained with the constant voltage applied to the connecting point of the resistances R3 , R4 therebetween.

8. 发明专利

JPH08250776A ELECTRONIC DEVICE CONSTITUTED OF SUPERCONDUCTING SINGLE CRYSTAL LAMINAR 失效
公开(公告)号：JPH08250776A
公开(公告)日：1996-09-27
申请号：JP5554495
申请日：1995-03-15
申请人： OPT KK
发明人： YAMASHITA TSUTOMU , TACHIKI AKIRA , CHIBA YUKIMASA
IPC分类号： G01R33/035 , G01R1/28 , H01L39/22
摘要： PURPOSE: To utilize a Josephson junction, to generate a THz-band electromagnetic wave and to make it possible to take out the electromagnetic wave by a method wherein the electronic device is provided with a signal input means provided in contact with the flat part of the first layer of a laminar superconducting single crystal, and an electromagnetic wave output means provided in contact with the end on one side of the ends of the laminar part of each layer of the single crystal. CONSTITUTION: An electronic device is provided with a signal input means 2 provided in contact with the flat part of a first layer of a laminar superconducting single crystal 1, and an electromagnetic wave output means 3 provided in contact with the end on one side of the ends of the laminar part of each layer of the single crystal 1. For a single crystal 1, an LSCO single crystal, a YBCO single crystal or a TBCCO single crystal is used. The means 2 has a metal film provided via a Josephson junction to the first layer of the single crystal 1, and a DC power supply connected with the metal film. An electromagnetic wave due to plasma generated in the interior of the single crystal 1 is propagated in the single crystal by a signal inputted through the means 2 of the single crystal 1 and is taken out through the means 3 provided in contact with the end on one side of the ends of the laminated part of each layer of the single crystal 1 as a THz-band electromagnetic wave.

9. 发明专利

JPH07336872A PULSE GENERATOR 失效
公开(公告)号：JPH07336872A
公开(公告)日：1995-12-22
申请号：JP14716694
申请日：1994-06-06
申请人： N F KAIRO SEKKEI BLOCK KK
发明人： KADOKAWA TAKANORI
IPC分类号： G01R1/28 , G01R19/165 , H02H3/08 , H02H3/087
摘要： PURPOSE:To provide a pulse generator having high current detecting accuracy and high power efficiency. CONSTITUTION:A pulse generator is constituted so that pulses are output in response to driving pulses from a charging means 41 charged by constant currents through a constant current diode, etc., 3 from a power supply 1, current supply from the power supply to the charging means is interrupted by a first switch 7 and the supply of driving pulses by a second switch 8 is interrupted, and a current detecting means 2 as a photo-coupler with the primary side, through which currents fed from the power supply 1 to the charging means 41 flow, and the secondary side, which is insulated electrically from the primary side and through which currents proportional to currents flowing through the primary side flow, is provided. When the duty of currents flowing through the secondary side of the current detecting means 2 reaches a predetermined value or more, at least one of the first switch or the second switch is interrupted and operated.

10. 发明专利

JPH07333249A VOLTAGE GENERATION CIRCUIT FOR TESTING IC 失效
公开(公告)号：JPH07333249A
公开(公告)日：1995-12-22
申请号：JP14395194
申请日：1994-06-02
申请人： ADVANTEST CORP
发明人： HASHIMOTO YOSHIHIRO
IPC分类号： G01R31/26 , G01R1/28 , G01R19/00 , G01R31/30 , G01R31/319 , G05F1/618
摘要： PURPOSE:To reduce changes in voltage applied to a load in an operation test by arranging a variable current source to decrease or increase the current the same in amount as that flowing between a connection point at which a voltage is drawn to a feedback circuit and the load opposite to increase or decrease therein. CONSTITUTION:Switches S1 and S5 are turned ON and switches S2, S3 and S4 turned OFF at the measurement of the DC characteristic of a load 1(LSI) to measure the DC characteristic. Then, at the testing of the operation characteristic, the switches S1 and S5 are turned OFF and the switches S2, S3 and S4 are turned ON. As a result, a low resistance R2 comes to be inserted between a connection point O at which a voltage applied to the load 1 is drawn to a feedback circuit 3 and the load 1 and a current I1 is led into a variable current source 4 from the vicinity of the connection point O. A voltage Vy generated across two ends in proportion to a current 12 flowing through the low resistance R2 drives the variable current source 4 through a differential amplifier A5. Thus, the variable current source 4 takes the current 11 thereinto in reverse proportion to the generated voltage Vy of the low resistance R2 from the vicinity of the connection point O.

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