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1. 发明专利

JP3529938B2 A method of manufacturing a semiconductor integrated circuit device and semiconductor device 失效
公开(公告)号：JP3529938B2
公开(公告)日：2004-05-24
申请号：JP9873496
申请日：1996-04-19
申请人：富士通株式会社
发明人：義昭中田 , 俊彦森
IPC分类号： H01L29/73 , H01L21/20 , H01L21/203 , H01L21/331 , H01L21/822 , H01L21/8252 , H01L29/737
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/822 , H01L21/8252 , Y10S148/041 , Y10S148/169 , Y10S438/973

2. 发明专利

JPS5752127A Method and device for forming iii-v group element semiconductor layer 失效
标题翻译：用于形成III-V族元素半导体层的方法和装置
公开(公告)号：JPS5752127A
公开(公告)日：1982-03-27
申请号：JP11308881
申请日：1981-07-21
申请人： Western Electric Co
发明人： GUREN DAGURASU KUBIAKU
IPC分类号： C30B23/02 , C30B23/06 , C30B25/02 , H01L21/203
CPC分类号： C30B23/02 , C30B23/066 , C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/02658 , Y10S148/065 , Y10S148/169
摘要： The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M2 or M4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As2 and P2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

3. 发明专利

JPS6182470A Manufacture of quantum well device 失效
标题翻译：量子阱器件的制造
公开(公告)号：JPS6182470A
公开(公告)日：1986-04-26
申请号：JP14411385
申请日：1985-07-02
申请人： Texas Instruments Inc
发明人： MAAKU EI RIIDO , ROBAATO TEII BEITO
IPC分类号： H01L29/80 , H01L21/20 , H01L27/10 , H01L29/06 , H01L29/15 , H01L29/68 , H01L29/76
CPC分类号： B82Y10/00 , H01L29/158 , H01L29/7606 , Y10S148/05 , Y10S148/11 , Y10S148/16 , Y10S148/169

4. 发明专利

JPS5735158B2 JPS5735158B2 - 失效
公开(公告)号：JPS5735158B2
公开(公告)日：1982-07-27
申请号：JP14168175
申请日：1975-11-28
IPC分类号： C01G19/00 , C01G25/00 , C23C14/02 , C23C14/06 , C23C14/24 , C23C16/44 , C30B23/08 , C30B25/06 , H01L21/203 , H01L21/365
CPC分类号： C23C16/45525 , C23C14/02 , C23C14/24 , C23C16/45551 , H01L21/02422 , H01L21/02543 , H01L21/02557 , H01L21/02565 , H01L21/02631 , Y10S148/025 , Y10S148/072 , Y10S148/169 , Y10S438/935 , Y10S438/971
摘要： A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first single element on the surface and then subjecting the thus formed surface with a first single element atomic layer thereon to the vapor of a second single element which can react with the first single element at a temperature sufficiently high for the reaction to occur so that a single atomic layer of the second single element is formed on the surface bound to the first single element. This procedure can then be repeated alternately subjecting the surface to the vapors of the first single element then to the second single element, etc. until the compound film reaches a desired thickness. There is further provided an apparatus for carrying out this method comprising a vacuum chamber with evacuating means, a support for supporting a substrate, sources for at least two vapors of two different single elements and operating means for providing on the substrate first a single atomic layer of one of the elements, and then a single atomic layer of the other of the elements.

6. 发明专利

JPS60189971A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS60189971A
公开(公告)日：1985-09-27
申请号：JP4521684
申请日：1984-03-09
申请人： Toshiba Corp
发明人： USAMI TOSHIROU , MIKATA YUUICHI , SHINADA KAZUYOSHI
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/28273 , Y10S148/053 , Y10S148/138 , Y10S148/169
摘要： PURPOSE: To contrive the improvement in characteristic of withstand voltage of the oxide film on an amorphous single crystal Si film and in leakage characteristic by a method wherein an amorphous single crystal Si film serving as the first gate electrode is deposited on a semiconductor substrate and an insulation film is then formed thereon, through which an impurity is ion-implanted to the amorphous single crystal Si film, and the insulation film is removed; thereafter, the second gate oxide film is formed on the surface of the amorphous single crystal Si film.
CONSTITUTION: A field oxide film 22 is formed on the surface of the P
- type Si substrate 21 having a crystal orientation of (100); thereafter, the first gate oxide film 23 is formed on the surface of the substrate 21 surrounded by the oxide film 22 by heat treatment. Next, the first polycrystalline Si film 24 of no doping is deposited over the entire surface. Phosphorus is ion-implanted to the polycrystalline Si film 24 through a CVD oxide film 25. After annealing in a nitrogen atmosphere, the oxide film 25 is removed. Then, the second gate oxide film 26 is formed on the surface of the polycrystalline Si film 24. The second polycrystalline Si film 27, second gate oxide film 26, first polycrystalline film 24, and first gate oxide film 23 are successively removed by etching.
COPYRIGHT: (C)1985,JPO&Japio
摘要翻译：目的：通过在半导体衬底上沉积作为第一栅电极的非晶单晶Si膜而将半导体衬底上的氧化物膜的耐电压特性提高到非晶单晶硅膜的漏电特性，然后在其上形成绝缘膜，将杂质离子注入到非晶单晶Si膜中，并除去绝缘膜; 此后，在非晶单晶Si膜的表面上形成第二栅氧化膜。构成：在具有（100）晶体取向的P型Si衬底21的表面上形成场氧化膜22。此后，通过热处理在由氧化物膜22包围的基板21的表面上形成第一栅极氧化膜23。接下来，在整个表面上沉积无掺杂的第一多晶Si膜24。通过CVD氧化膜25将磷离子注入到多晶硅膜24中。在氮气气氛中退火后，除去氧化膜25。然后，在多晶硅膜24的表面上形成第二栅极氧化膜26.通过蚀刻，依次除去第二多晶Si膜27，第二栅极氧化膜26，第一多晶膜24和第一栅极氧化膜23。

7. 发明专利

JPS59186367A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS59186367A
公开(公告)日：1984-10-23
申请号：JP6014583
申请日：1983-04-06
申请人： Matsushita Electric Ind Co Ltd
发明人： SAKAI HIROYUKI , TAKEMOTO TOYOKI , KAWAKITA KENJI , FUJITA TSUTOMU , AKIYAMA MITSUKO
IPC分类号： H01L21/20 , H01L21/203 , H01L21/285 , H01L21/331 , H01L29/73 , H01L29/732
CPC分类号： H01L29/7325 , H01L21/02532 , H01L21/02576 , H01L21/02631 , H01L21/28525 , Y10S148/123 , Y10S148/124 , Y10S148/169
摘要： PURPOSE: To enable to accomplish a high speed and high density semiconductor device by a method wherein each semiconductor layer is continuously formed on a semiconductor substrate by performing a molecular beam epitaxial method.
CONSTITUTION: A B
+ -doped P type base layer 15, an As-doped N type emitter layer 16, and a polycrystalline Si layer or an amorphous Si are grown on the P type semiconductor substrate 11, whereon an N
+ type buried layer 12, a P type channel-stopper 13 and an N-type collector layer 14 are formed, by performing a molecular beam epitaxial method. According to this process, as works are continuously performed in a vacuum atmosphere, no natural oxide film is generated on the interface located between the layer 16 and the layer 17. Also, the layer 15 can be formed thin in thickness by utilizing the molecular beam epitaxial method. Also, the layer 16 of high density can be uniformly grown. As said layers 15 and 16 are grown independently, the compensating effect of donor and acceptor in emitter does not generate at all, thereby enabling to form a thin emitter junction and a base junction in an excellent manner and to contrive formation of a high-speed transistor.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过采用分子束外延法在半导体衬底上连续形成半导体层的方法，能够实现高速，高密度的半导体器件。构成：在P型半导体基板11上生长AB +掺杂P型基极层15，As掺杂N型发射极层16以及多晶硅层或非晶硅，N +型通过进行分子束外延法形成掩埋层12，P型沟道截止器13和N型集电极层14。根据该方法，由于在真空气氛中连续进行工作，所以在位于层16与层17之间的界面上不产生自然氧化膜。而且，通过利用分子束外延法。此外，高密度的层16可以均匀地生长。由于所述层15和16独立生长，所以施主和受体在发射极中的补偿效应完全不产生，从而能够以优异的方式形成薄的发射极结和基极结，并且能够形成高速晶体管。

8. 发明专利

JPS59123226A Device for manufacturing semiconductor device 失效
标题翻译：用于制造半导体器件的器件
公开(公告)号：JPS59123226A
公开(公告)日：1984-07-17
申请号：JP22970882
申请日：1982-12-28
申请人： Fujitsu Ltd
发明人： MIMURA TAKASHI , HIKOSAKA YASUMI , KOTANI KOUICHIROU
IPC分类号： H01L21/31 , C23C14/56 , C30B23/02 , H01J37/32 , H01L21/20 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/318 , H01L21/324
CPC分类号： C23C14/56 , C30B23/02 , H01J37/32 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02639 , H01L21/3185 , H01L21/3245 , Y10S148/017 , Y10S148/022 , Y10S148/169 , Y10S438/913
摘要： PURPOSE: To prevent the contamination on an MBE crystal forming device and the damage on a supervacuum pump by a method wherein efforts are made so as to obtain an excellent crystal by progressing a processing work without exposing a wafer in the atmospheric air during the whole manufacturing processes of a chemical semiconductor.
CONSTITUTION: A hydrogen plasma etching chamber 11 and an insulating film growing chamber 13 are coupled to a molecular beam epitaxial growing chamber 12, and a wafer is brought in the state wherein it will be moved in-between said chambers by performing an external operation. As a result, even when an etching is performed for the purpose of cleaning the surface of a chemical semiconductor substrate or for the purpose of formation of a recessed part before chemical semiconductor crystal is epitaxially grown using a molecular beam, a vacuum pump with which a supervacuum state is formed is not damaged, or the manufacturing device is not contaminated, because a hydrogen plasma etching is used. Also the wafer, whereon an etching was performed, can be carried to a molecular beam epitaxial growing chamber without picking it up to outside. Besides, as the wafer is subsequently picked out in the atmospheric air after an insulating film to be turned to a protective film has been formed thereon after it has been carried to an insulating film growing chamber, the semiconductor device of excellent characteristics can be manufactured.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了防止MBE晶体形成装置的污染和超级真空泵的损坏，通过在整个制造过程中通过进行处理工作而不暴露大气中的晶片，从而获得优异的晶体的方法化学半导体的工艺。构成：氢等离子体蚀刻室11和绝缘膜生长室13连接到分子束外延生长室12，并且晶片进入其将通过执行外部操作在所述室之间移动的状态。结果，即使为了清洁化学半导体基板的表面而进行蚀刻，或者为了在使用分子束外延生长化学半导体晶体之前形成凹部的目的，也可以使用真空泵由于使用氢等离子体蚀刻，所以形成的超真空状态不被损坏，或制造装置不被污染。此外，进行蚀刻的晶片也可以被携带到分子束外延生长室，而不将其拾取到外部。此外，由于随着在其被运送到绝缘膜生长室之后在形成保护膜的绝缘膜之后，在大气中随后取出晶片，因此可以制造出优异特性的半导体器件。

9. 发明专利

JPS59211216A Method of producing semiconductor device 失效
公开(公告)号：JPS59211216A
公开(公告)日：1984-11-30
申请号：JP3741984
申请日：1984-03-01
申请人： Philips Nv
发明人： YAN HAISUMA , POORU KIAERUBII RARUSEN , TEIMU DE YONGU , YOHANESU FURIN FUAN DERU FUEEN , UIREMU AARE SANDERU DOUMA , FURANSU UIREMU SARISU
IPC分类号： H01L21/20 , H01L21/203
CPC分类号： H01L21/02461 , H01L21/02392 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S148/003 , Y10S148/007 , Y10S148/025 , Y10S148/123 , Y10S148/169

10. 发明专利

JPS5168736A Randamuakusesumemori 失效
公开(公告)号：JPS5168736A
公开(公告)日：1976-06-14
申请号：JP11874475
申请日：1975-10-01
申请人： Honeywell Inf Systems
发明人： DAARERU ERU FUETSUTO
IPC分类号： G11C11/41 , G11C11/411 , G11C11/414 , H03K3/286
CPC分类号： G11C11/4116 , H03K3/286 , Y10S148/169

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