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    • 9. 发明专利
    • Resist underlayer film material and pattern forming method using the same
    • 使用相同的抗静电膜材料和图案形成方法
    • JP2012145897A
    • 2012-08-02
    • JP2011006307
    • 2011-01-14
    • Shin Etsu Chem Co Ltd信越化学工業株式会社
    • OGIWARA TSUTOMUKOORI DAISUKEBIYAJIMA YUSUKEWATANABE TAKESHIFUJII TOSHIHIKOKANAO TAKESHI
    • G03F7/11C08G8/20G03F7/039H01L21/027
    • C08G10/02G03F7/094
    • PROBLEM TO BE SOLVED: To provide a resist underlayer film material, from which an underlayer film can be formed, the film capable of reducing reflectance as an underlayer film for a three-layer resist process (that is, having optimal n-value and k-value as an antireflection film), having excellent filling characteristics and high resistance against pattern bending, in particular, preventing collapse or distortion of lines after etching in a thin high-aspect line having a width of less than 60 nm, and to provide a pattern forming method using the same.SOLUTION: A resist underlayer film material contains at least a polymer obtained by condensing one kind or more of compounds expressed by general formula (1-1) and/or (1-2), and one kind or more of compounds of benzaldehyde having a hydroxyl group and/or naphthaldehyde having a hydroxyl group and/or an equivalent thereof.
    • 要解决的问题:为了提供能够形成下层膜的抗蚀剂下层膜材料,能够降低作为三层抗蚀剂工艺的下层膜的反射率的膜(即,具有最佳n- 值和k值作为抗反射膜),具有优异的填充特性和高抗图案弯曲性,特别是防止在宽度小于60nm的薄型高纵横线中蚀刻后的线的塌陷或变形,以及 以提供使用该图案形成方法的图案形成方法。 抗蚀剂下层膜材料至少含有通过将一种或多种通式(1-1)和/或(1-2)表示的化合物缩合得到的聚合物,以及一种或多种 具有羟基的苯甲醛和/或具有羟基和/或其等同物的萘醛。 版权所有(C)2012,JPO&INPIT