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1. 发明专利

JP2014115238A Wafer defect inspection device 有权
标题翻译：防水缺陷检测装置
公开(公告)号：JP2014115238A
公开(公告)日：2014-06-26
申请号：JP2012271014
申请日：2012-12-12
申请人： Yasunaga Corp , 株式会社安永
发明人： KAWASAKI SHINGO , KUSUI KAZUYUKI , IMANAKA HIDESADA , MACHINO TOMOYA
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a wafer defect inspection device that enables a detection of a defect part of a semiconductor wafer from an infrared image even if a surface state of the semiconductor wafer changes.SOLUTION: The wafer defect inspection device comprises: illumination devices (10 and 12) that irradiate a wafer (2) with light; an imaging device (14) that photographs at least any one of transmission light of the wafer having the light irradiated and reflection light thereof; an inspection device (20) that inspects a defect of the wafer on the basis of a photographed wafer image; and a control device (20) that adjusts illuminance of the illumination device. The control device includes: luminance detection means (22) that detects luminance from the wafer image photographed by the imaging device; and illuminance control means (24) that compares judgment luminance calculated on the basis of the luminance detected by the luminance detection means with a prescribed range including optimal luminance serving as reference luminance in an inspection, and, when the judgment luminance does not fall within the prescribed range, adjusts the illuminance of the illumination device so that the judgment luminance falls within the prescribed range.
摘要翻译：要解决的问题：提供一种晶片缺陷检查装置，即使半导体晶片的表面状态发生变化，也能够从红外图像检测半导体晶片的缺陷部分。解决方案：晶片缺陷检查装置包括：照明装置（10和12），用光照射晶片（2）; 成像装置（14），其照射具有所述光照射和所述反射光的所述晶片的透射光中的至少任一种; 检查装置（20），其基于拍摄的晶片图像检查晶片的缺陷; 以及调节照明装置的照度的控制装置（20）。控制装置包括：亮度检测装置，用于检测由成像装置拍摄的晶片图像的亮度; 以及照度控制装置（24），其将根据由所述亮度检测装置检测出的亮度计算出的判定亮度与包括在检查中作为基准亮度的最佳亮度的规定范围进行比较，并且当所述判断亮度不在调整照明装置的照度，判断亮度落在规定范围内。

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