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1. 发明专利

JP2013038417A FAST ANNEALING FOR GaN LED 审中-公开
标题翻译： GaN LED快速退火
公开(公告)号：JP2013038417A
公开(公告)日：2013-02-21
申请号：JP2012161560
申请日：2012-07-20
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW
IPC分类号： H01L33/32 , H01L21/26 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a method of forming GaN light-emitting diodes which realizes enhanced output power, lower starting voltage, and reduced series resistance.SOLUTION: A method of forming GaN light-emitting diodes includes forming a GaN multilayer structure having an n-GaN layer 40 and a p-GaN layer 50 between which an active layer 60 is interposed. The method also includes performing fast annealing of the p-GaN layer 50 using either a laser or a flash lamp. The method further includes forming a transparent conductive layer 70 on the GaN multilayer structure, and adding a p-contact 90p to the transparent conductive layer 70 and an n-contact 90n to the n-GaN layer 40.
摘要翻译：要解决的问题：提供一种形成GaN发光二极管的方法，其实现增强的输出功率，较低的起始电压和降低的串联电阻。解决方案：一种形成GaN发光二极管的方法包括形成具有n-GaN层40和p-GaN层50的GaN多层结构，其间介于有源层60之间。该方法还包括使用激光或闪光灯对p-GaN层50进行快速退火。该方法还包括在GaN多层结构上形成透明导电层70，并将p接触90p加到n-GaN层40上的透明导电层70和n型接触90n。版权所有：（C ）2013，JPO＆INPIT

2. 发明专利

JP2014045186A Non-melt thin-wafer laser annealing methods 有权
标题翻译：非熔融薄膜激光退火方法
公开(公告)号：JP2014045186A
公开(公告)日：2014-03-13
申请号：JP2013162856
申请日：2013-08-06
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW , WANG XIAORU , SHEN XIAOHUA
IPC分类号： H01L21/265 , H01L21/268
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： PROBLEM TO BE SOLVED: To provide a method of annealing a thin semiconductor wafer that allows effective non-melt dopant activation on one side of the wafer without causing thermal degradation on the other side of the wafer.SOLUTION: A device wafer 10a is ground from a back side 14a so as to reduce the thickness of the device wafer 10a from about 750 μm to a thickness d in the range from about 5 μm to about 150 μm. An oxide layer 15 and carrier wafer 10b constitute a protective structure on a top side. The protective structure serves to protect a main part 34 of the electronic device, embedded within a product wafer 10.
摘要翻译：要解决的问题：提供一种退火薄半导体晶片的方法，其允许在晶片的一侧上有效的非熔融掺杂剂活化而不会在晶片的另一侧引起热劣化。解决方案：将器件晶片10a从背面14a，以将器件晶片10a的厚度从约750μm减小到约5μm至约150μm范围内的厚度d。氧化物层15和载体晶片10b在顶侧构成保护结构。保护结构用于保护嵌入在产品晶片10内的电子设备的主要部分34。

3. 发明专利

JP2013120936A Ganled laser anneal with reduced pattern effect 审中-公开
标题翻译：具有减少图案效果的GANLED LASER ANNEAL
公开(公告)号：JP2013120936A
公开(公告)日：2013-06-17
申请号：JP2012249286
申请日：2012-11-13
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK M ANDREW , WANG YUN
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/0095 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a method for laser-annealing a GaN light emitting diode (LED) with a reduced pattern effect.SOLUTION: The method has a step of forming plural elongated conductive structures 70E having a long dimension and a short dimension and spaced from each other substantially in a long dimension direction on a n-type GaN 50 or a surface 52 of a p-type GaN layer of a GaN LED structure 10. Also, it has a step of generating a p-polarized anneal laser beam 120 having an anneal wavelength longer than the short dimension. Also, it has a step of directing the anneal laser beam to a conductive structure so that a polarization direction 122 is orthogonal to the long dimension of the conductive structure, and irradiating the n-type GaN layer or the p-type GaN layer of the GaN LED structure with the p-polarized anneal laser beam via the conductive structure.
摘要翻译：要解决的问题：提供一种减少图案效应的GaN发光二极管（LED）的激光退火方法。解决方案：该方法具有在n型GaN 50或p的表面52上形成具有长尺寸和短尺寸并且基本上在长尺寸方向上彼此间隔开的多个细长导电结构70E的步骤 GaN LED结构10的GaN型GaN层。此外，其具有产生退火波长比短尺寸长的p极化退火激光束120的步骤。此外，它具有将退火激光束引导到导电结构的步骤，使得偏振方向122与导电结构的长尺寸正交，并且照射n型GaN层或p型GaN层 GaN LED结构与p偏振退火激光束通过导电结构。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013157600A Two-beam laser annealing with improved temperature performance 有权
标题翻译：具有改善温度性能的双光束激光退火
公开(公告)号：JP2013157600A
公开(公告)日：2013-08-15
申请号：JP2012287204
申请日：2012-12-28
申请人： Ultratech Inc , ウルトラテックインク
发明人： SHEN XIAOHUA , WANG YUN , WANG XIAORU
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2201/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide systems and methods for performing laser annealing in a manner that reduces wafer surface temperature variations during the laser annealing process.SOLUTION: The systems and methods include annealing the wafer surface with first and second laser beams as preheat and anneal laser beams having first and second intensity, respectively. The preheat laser beam brings the wafer surface temperate close to the annealing temperature, and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are used to achieve good uniformity of anneal temperature.
摘要翻译：要解决的问题：提供用于在激光退火过程中降低晶片表面温度变化的方式进行激光退火的系统和方法。解决方案：系统和方法包括用第一和第二激光束退火晶片表面作为预热和退火分别具有第一和第二强度的激光束。预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。在预热和退火波长处的晶片表面的反射率图用于实现退火温度的均匀性。

5. 发明专利

JP2013048236A FAST THERMAL ANNEALING FOR GaN LEDS 审中-公开
标题翻译： GaN LED的快速热退火
公开(公告)号：JP2013048236A
公开(公告)日：2013-03-07
申请号：JP2012179993
申请日：2012-08-15
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW
IPC分类号： H01L33/36 , H01L21/265 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN light-emitting diode which realizes enhanced output power, lower turn-on voltage and reduced series resistance.SOLUTION: A method includes forming a GaN multilayer structure 30 having an n-GaN layer 40 and a p-GaN layer 50 between which an active layer 60 is sandwiched. The method also includes performing fast thermal annealing, having time duration of 10 seconds or shorter, of the p-GaN layer 50 using either a laser or a flash lamp. The method further includes forming a transparent conducting layer 70 on the GaN multilayer structure 30, and adding a p-contact 90p to the transparent conducting layer 70 and an n-contact 90n to the n-GaN layer 40.
摘要翻译：解决的问题：提供一种实现增强输出功率，降低接通电压和降低串联电阻的GaN发光二极管的制造方法。解决方案：一种方法包括形成具有n-GaN层40和p-GaN层50的GaN多层结构30，其间夹有有源层60。该方法还包括使用激光或闪光灯执行p-GaN层50的持续时间为10秒或更短的快速热退火。该方法还包括在GaN多层结构30上形成透明导电层70，并将p型接触90p加到n-GaN层40上的透明导电层70和n型接触90n上。 C）2013，JPO＆INPIT

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