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1. 发明专利

JP2014051050A Mold, blank base plate for mold, method for producing the mold 有权
标题翻译：模具，用于模具的空白基板，用于生产模具的方法
公开(公告)号：JP2014051050A
公开(公告)日：2014-03-20
申请号：JP2012197806
申请日：2012-09-07
申请人： Toshiba Corp , 株式会社東芝
发明人： YONEDA IKUO , NAKASUGI TETSUO
IPC分类号： B29C33/42 , H01L21/027
CPC分类号： B29C59/02 , B29C33/424 , G03F7/0002 , Y10T428/24488
摘要： PROBLEM TO BE SOLVED: To provide a mold on which a pattern is formed in high yield and to provide a blank base plate for molds, and a method for producing the mold.SOLUTION: The mold of one embodiment includes a base material, a pedestal part, and a pattern part. The base material has a first surface and a second surface on the opposite side of the first surface. The pedestal part is arranged to be projected from the first surface of the base material and has a side face. The pattern part has a rugged pattern arranged on the pedestal part. The pedestal part has a rugged pattern-arranged first zone and a second zone arranged between the first zone and the side face. The maximum height of the first zone is made equal to that of the second zone. The first height of a side face-side portion of the second zone is made lower than the second height of a first zone-side portion of the second zone.
摘要翻译：要解决的问题：提供一种以高产率形成图案的模具，并提供用于模具的坯料底板及其制造方法。一种实施方式的模具包括基材，基座部分和图案部分。基材具有在第一表面的相对侧上的第一表面和第二表面。基座部被布置成从基材的第一表面突出并具有侧面。图案部分具有布置在基座部分上的凹凸图案。基座部分具有凹凸图案布置的第一区域和布置在第一区域和侧面之间的第二区域。使第一区域的最大高度等于第二区域的最大高度。使第二区域的侧面部分的第一高度低于第二区域的第一区域侧部分的第二高度。

2. 发明专利

JP2012019222A Pattern formation method 有权
标题翻译：模式形成方法
公开(公告)号：JP2012019222A
公开(公告)日：2012-01-26
申请号：JP2011172831
申请日：2011-08-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KOSHIBA TAKESHI , NAKASUGI TETSUO , YONEDA IKUO
IPC分类号： H01L21/027 , B29C59/02
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method capable of suppressing the generation of pattern defects when forming a pattern on a substrate.SOLUTION: A pattern formation method comprises: a step for determining an amount of volatile hardening resin to be formed on a substrate; a step for forming on the substrate the hardening resin in the amount thus determined; a step for bringing a template, which has a pattern to be filled with the hardening resin when brought into contact with the resin, into contact with the hardening resin while supplying gas to the hardening resin; a step for supplying gas under different conditions for a central section of the substrate and for a peripheral section of the substrate so that an amount of volatilization of the hardening resin may be uniform over the entire substrate; a step for hardening the hardening resin with the template making contact with the hardening resin.
摘要翻译：要解决的问题：提供一种能够抑制在基板上形成图案时产生图案缺陷的图案形成方法。解决方案：图案形成方法包括：确定在基板上形成的挥发性硬化树脂的量的步骤; 在所述基板上形成由此确定的量的硬化树脂的步骤; 在向硬化树脂供给气体的同时，使具有与硬化树脂填充的图案的模板在与树脂接触时与硬化树脂接触的步骤; 在基板的中心部分和基板的周边部分的不同条件下供应气体的步骤，使得硬化树脂的挥发量在整个基板上可能是均匀的; 用与硬化树脂接触的模板硬化硬化树脂的步骤。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2009139695A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009139695A
公开(公告)日：2009-06-25
申请号：JP2007316871
申请日：2007-12-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KOSHIBA TAKESHI , NAKASUGI TETSUO
IPC分类号： G03F7/40 , H01L21/027 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of easily forming different-pitch patterns.
SOLUTION: The method includes steps of: forming, on a film 20 of a processing object, resist patterns 31B containing a component capable of generating an acid by heating with pitches being differed between a memory cell forming area 11 and a peripheral circuit forming area 12; forming a fine pattern forming film 32 containing a component crosslinkable by the acid on the film 20; forming a sidewall film 33 on the circumference of the resist patterns 31B by crosslinking the fine pattern forming film 32 in the range to which the acid is supplied from the resist patterns 31B by heating; and forming a pattern composed of the sidewall film 33 on the memory cell forming area 11 and a pattern composed of the sidewall film 33 and the resist pattern 31B on the peripheral circuit forming area 12 by removing the fine pattern forming film 32 and the resist patterns 31B on the memory cell forming area 11.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够容易地形成不同间距图形的半导体器件的制造方法。解决方案：该方法包括以下步骤：在加工对象的薄膜20上形成抗蚀剂图案31B，该抗蚀剂图案31B含有能够通过加热而产生酸的成分，该间隔在存储单元形成区域11和外围电路成形区域12; 在薄膜20上形成含有酸可交联成分的微细图案形成薄膜32; 在抗蚀剂图案31B的周围通过加热从抗蚀剂图案31B交联在精细图案形成膜32的范围内而形成侧壁膜33; 并且通过除去微细图案形成膜32和抗蚀剂图案，在周边电路形成区域12上，在存储单元形成区域11上形成由侧壁膜33构成的图案和由侧壁膜33和抗蚀剂图案31B组成的图案 31B在存储单元形成区域11上。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007329267A Device and method for charged-particle-beam lithography 审中-公开
标题翻译：充电颗粒光栅的装置和方法
公开(公告)号：JP2007329267A
公开(公告)日：2007-12-20
申请号：JP2006158795
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKASUGI TETSUO , KOSHIBA TAKESHI
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide an electron-beam lithography method that enables to improve productivity while improving effective throughput when performing alignment lithography in an electron-beam lithography device. SOLUTION: A charged-particle-beam lithography method includes steps of (S104) lithographing a deviation measurement pattern on a resist film, which is applied on a substrate to be processed formed with a ground mark, by using a correction factor; (S106) scanning the ground mark and deviation measurement pattern with a charged particle beam, respectively so as to calculate a position of the ground mark, and that of the deviation measurement pattern; (S107) calculating an alignment deviation amount on the basis of the position of the ground mark, and that of the deviation measurement pattern; (S109) correcting the correction factor on the basis of the alignment deviation amount; and (S110) performing lithography by using the correction factor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电子束光刻方法，其能够在电子束光刻装置中进行取向光刻时提高生产率，同时提高有效吞吐量。解决方案：一种带电粒子束光刻方法，包括以下步骤：（S104）通过使用校正因子对施加在被处理的被处理基板上的抗蚀剂膜上的偏移测量图案进行平版印刷; （S106）分别用带电粒子束扫描基准标记和偏差测量图案，以计算地面标记的位置和偏差测量图案的位置; （S107）基于地面标记的位置和偏差测量图案的位置计算对准偏差量; （S109）基于对准偏差量来校正校正系数; 和（S110）通过使用校正因子执行光刻。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006310392A Method and apparatus of electron beam lithography 审中-公开
标题翻译：电子束光刻的方法与装置
公开(公告)号：JP2006310392A
公开(公告)日：2006-11-09
申请号：JP2005128231
申请日：2005-04-26
申请人： Toshiba Corp , 株式会社東芝
发明人： INENAMI RYOICHI , NAKASUGI TETSUO
IPC分类号： H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To make it possible to correct data finely during conversion of data or to accurately calculate writing time by using writing data by designing the writing data obtained by converting design data.
SOLUTION: In electron beam lithography of a variable shaped beams (VSB) method and a character projection (CP) method for forming a resist pattern by electron beam writing, electron beam writing data are comprised of writing pattern data represented by an aggregation of a VSB shot or a CP shot as a minimum unit during writing, and CP aperture data describing IDs and positions of the respective aperture of a formed aperture (CP aperture) having a character-pattern-shaped aperture. On the basis of the writing data, the electron beam lithography apparatus is used to write a pattern to a resist pattern.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了在数据转换期间精确地校正数据，或者通过设计通过转换设计数据获得的写入数据，通过使用写入数据来精确地计算写入时间是可能的。解决方案：在通过电子束写入形成抗蚀剂图案的可变形波束（VSB）方法和字符投影（CP）方法的电子束光刻中，电子束写入数据包括由聚合表示的写入图案数据在写入期间作为最小单位的VSB拍摄或CP拍摄，以及描述具有字符图案形状的孔的形成的孔径（CP孔径）的相应孔径的ID和位置的CP孔径数据。基于写入数据，使用电子束光刻设备将图案写入抗蚀剂图案。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006253700A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2006253700A
公开(公告)日：2006-09-21
申请号：JP2006090523
申请日：2006-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： ANDO KOJI , SUGIHARA KAZUYOSHI , NAKASUGI TETSUO , OKUMURA KATSUYA
IPC分类号： H01L21/027 , G01B15/04 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To form a minute pattern at high throughput by putting both of excellent image dissection transgressing light of an electron beam exposure unit and high throughput of a light stepper into practical use, and to improve superimposition accuracy of a pattern.
SOLUTION: A resist pattern is formed by exposing a desired pattern on a resist formed on wafer 5. A pattern of a ground substrate with a sensitive material applied thereto is detected based on information on a second electron discharged from the sensitive material by irradiating electron beam on the sensitive material, and exposure is carried out by positioning at the detected pattern.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过将电子束曝光单元的优异的图像解离偏光和光步进器的高通量都实现，实现高成像度的微小图案，提高图案的叠加精度。解决方案：通过在晶片5上形成的抗蚀剂上曝光期望的图案形成抗蚀剂图案。基于从敏感材料排出的第二电子的信息，检测具有施加到其上的敏感材料的接地衬底的图案，在敏感材料上照射电子束，并通过定位在检测到的图案进行曝光。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006024624A Charged beam drawing apparatus and aperture adjusting method 审中-公开
标题翻译：充电光束绘图装置和孔径调整方法
公开(公告)号：JP2006024624A
公开(公告)日：2006-01-26
申请号：JP2004199349
申请日：2004-07-06
申请人： Toshiba Corp , 株式会社東芝
发明人： OTA TAKUMI , NAKASUGI TETSUO
IPC分类号： H01L21/027 , G03F7/20 , H01J37/09 , H01J37/305
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To realize a charged beam drawing apparatus which can simply adjust the rotating angle of an aperture.
SOLUTION: The charged beam exposing apparatus comprises a charged beam source 1 for radiating the charged beam 2; a first molding aperture mask 5 including an aperture for a first rotation adjustment; a second molding aperture mask 10 including an aperture for a second rotation adjustment; a detector 14 for detecting intensity distribution of charged beam within the surface which is almost parallel to the second molding aperture 10 after it is emitted from the charged beam source 1, and has passed the aperture for the first and second rotation adjustments; a control circuit 31 for rotating the first molding aperture 5 to control relative rotating angle between the first and second molding aperture masks 5, 10; and a rotating angle acquiring/instructing circuit 23 for acquiring relative rotating angle within the predetermined range of deviation in relative rotating angle, based on a plurality of detection results obtained by changing a plurality times of relative rotating angle with a control circuit 31 and by detecting the charged beam 1 with the detector 14 for every rotating angle, and for giving an instruction to the control circuit 31 for making relative rotating angle equal to the rotating angle obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：实现可以简单地调节孔径的旋转角度的带电波束绘制装置。充电光束曝光装置包括用于辐射带电光束2的带电光束源1; 包括用于第一旋转调节的孔的第一成型孔掩模5; 包括用于第二旋转调节的孔的第二成型孔掩模10; 检测器14，用于检测表面内的带电束的强度分布，该光束在从被充电的光束源1发射后几乎平行于第二成型孔10，并且已经通过该孔用于第一和第二旋转调节; 用于旋转第一成型孔5以控制第一和第二成型孔掩模5,10之间的相对旋转角度的控制电路31; 以及旋转角度获取/指示电路23，用于基于通过用控制电路31改变多次相对旋转角而获得的多个检测结果，并通过检测来获取在相对旋转角度的预定偏差范围内的相对旋转角度带有检测器14的带电波束1用于每个旋转角度，并且用于向控制电路31发出指令，以使相对旋转角度等于获得的旋转角度。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2003068638A System and method for charged particle beam lithography 有权
标题翻译：充电颗粒光栅的系统和方法
公开(公告)号：JP2003068638A
公开(公告)日：2003-03-07
申请号：JP2002172637
申请日：2002-06-13
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKASUGI TETSUO , WATANABE YUMI
IPC分类号： G03F7/20 , G03F9/00 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a system and method for charged particle beam lithography by which drawing accuracy can be improved by eliminating occurrence of connection deviation deviations in the boundary of drawing regions by means of a multi-beam system.
SOLUTION: A multi-beam type electron beam lithography system, having a plurality of electron beam optical systems, is provided with a means (S1) which selects one electron beam optical system from among the electron beam optical systems, a means (S3) which successively detects marks by means of the other electron beam optical systems than the selected system, and a means (S4) which measures the interference of reflected particles from other marks in the selected optical system. The lithography system is also provided with a means (S7), which groups interference-free electron beam optical systems, based on the measured results of the means (S4) and a means (S9), which simultaneously detects the positions of marks by means of the grouped electron beam optical systems.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于带电粒子束光刻的系统和方法，借助于通过多光束系统消除绘图区域边界中的连接偏差偏差，可以提高绘图精度。解决方案：具有多个电子束光学系统的多光束型电子束光刻系统设置有从电子束光学系统中选择一个电子束光学系统的装置（S1），一种装置（S3），其连续地通过除了所选择的系统之外的其他电子束光学系统检测标记，以及测量所选择的光学系统中来自其它标记的反射粒子的干涉的装置（S4）。光刻系统还具有基于装置（S4）的测量结果和通过装置（S9）同时检测标记位置的装置（S9）的装置（S7），其对无干扰电子束光学系统进行分组的分组电子束光学系统。

9. 发明专利

JP2013175595A Substrate holding device, pattern transfer device, and pattern transfer method 有权
标题翻译：基板保持装置，图案转印装置和图案转印方法
公开(公告)号：JP2013175595A
公开(公告)日：2013-09-05
申请号：JP2012039074
申请日：2012-02-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KASA KENTARO , TAKAKUWA MAHO , INENAMI RYOICHI , MATSUKI KAZUTO , NAKASUGI TETSUO , KOIZUMI HIROSHI , INOMOTO MINORU
IPC分类号： H01L21/683 , H01L21/027
CPC分类号： G03F7/70783 , G03F7/707
摘要： PROBLEM TO BE SOLVED: To provide a substrate holding device, a pattern transfer device, and a pattern transfer method which properly adjust the distortion of a substrate held.SOLUTION: According to an embodiment, a substrate holding device including a body part, and multiple first support parts is provided. The body part has a main surface. The body part is formed into a plate shape. The multiple first support parts are disposed on the main surface. The multiple first support parts respectively have suction parts that suction the substrate. The suction parts may move along a first direction that is arranged perpendicular to the major surface and a second direction that is arranged parallel to the major surface.
摘要翻译：要解决的问题：提供一种适当调整保持的基板的变形的基板保持装置，图案转印装置和图案转印方法。解决方案：根据实施方式，一种基板保持装置，包括主体部分和多个提供第一支撑部件。身体部位有一个主表面。主体部分形成为板状。多个第一支撑部分设置在主表面上。多个第一支撑部分分别具有吸附基板的抽吸部件。抽吸部件可以沿着垂直于主表面布置的第一方向和平行于主表面布置的第二方向移动。

10. 发明专利

JP2010251601A Template, method of manufacturing the same, and method of forming pattern 有权
标题翻译：模板，其制造方法和形成图案的方法
公开(公告)号：JP2010251601A
公开(公告)日：2010-11-04
申请号：JP2009100937
申请日：2009-04-17
申请人： Toshiba Corp , 株式会社東芝
发明人： YONEDA IKUO , KONO TAKUYA , NAKASUGI TETSUO , INENAMI RYOICHI
IPC分类号： H01L21/027 , B29C33/38 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a template in which the gap region of a substrate to be processed can be covered with an imprint resist uniformly with good reproducibility, a method of manufacturing the same, and to provide a method of forming a pattern.
SOLUTION: The method of manufacturing the template used in an optical imprint method includes: forming a pattern for imprinting in a pattern forming region 14 on a substrate 10; forming a resist film 11 in the pattern forming region 14; carrying out anisotropic etching using the resist film 11 as a mask to form a first step portion 13b and a first side portion 13a that connects the pattern forming region 14 and the first step portion 13b; forming a resist film 12 in the pattern forming region 14 and an outer peripheral portion 14b surrounding the pattern forming region 14 after removing the resist film 11; and carrying out wet etching using the resist film 12 as a mask to form a second step portion 13d and a curved second side portion 13c that connects the first step portion 13b and the second step portion 13d.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种模板，其中待加工的基板的间隙区域可以均匀地以良好的再现性被抗压印抗蚀剂覆盖，其制造方法和提供一种形成模式。解决方案：在光学压印方法中使用的模板的制造方法包括：在基板10上的图案形成区域14中形成用于压印的图案; 在图案形成区域14中形成抗蚀剂膜11; 使用抗蚀剂膜11作为掩模进行各向异性蚀刻，以形成连接图案形成区域14和第一台阶部分13b的第一台阶部分13b和第一侧面部分13a; 在除去抗蚀剂膜11之后，在图案形成区域14中形成抗蚀剂膜12和围绕图案形成区域14的外周部分14b; 并使用抗蚀剂膜12作为掩模进行湿式蚀刻，以形成连接第一台阶部分13b和第二台阶部分13d的第二台阶部分13d和弯曲的第二侧部分13c。版权所有（C）2011，JPO＆INPIT

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