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1. 发明专利

JP2012216765A FORMATION METHOD OF Cu WIRING AND FILM-FORMING SYSTEM 有权
标题翻译：铜线和成膜系统的形成方法
公开(公告)号：JP2012216765A
公开(公告)日：2012-11-08
申请号：JP2011287693
申请日：2011-12-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIZAKA TADAHIRO , GOMI ATSUSHI , KATO TAKAYOSHI , YOKOYAMA ATSUSHI , SAKUMA TAKASHI , YASUMURO CHIAKI , TOSHIMA HIROSHI , HATANO TATSUO , MIZUSAWA YASUSHI , HARA MASAMICHI , SUZUKI KENJI
IPC分类号： H01L23/532 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a Cu wiring by embedding a trench or a hole Cu only by PVD without using Cu plating.SOLUTION: A formation method of a Cu wiring includes: a step of forming a barrier film 204 on the entire surface of an interlayer dielectric film 202 having a trench 203 formed on a wafer W; a step of forming a Ru film 205 on the barrier film 204; a step of forming a first Cu film 206 in the trench 203 under the condition that Cu migration by PVD occurs on the Ru film 205; a step of forming a second Cu film 207 on the first Cu film 206 by the PVD at a faster deposition speed than the first Cu film 206; and a step of polishing the entire surface by CMP.
摘要翻译：要解决的问题：通过仅使用PVD而不使用Cu电镀来嵌入沟槽或孔Cu来形成Cu布线。解决方案：Cu布线的形成方法包括：在具有形成在晶片W上的沟槽203的层间电介质膜202的整个表面上形成阻挡膜204的步骤; 在阻挡膜204上形成Ru膜205的步骤; 在Ru膜205上发生通过PVD迁移的条件下，在沟槽203中形成第一Cu膜206的步骤; 通过PVD以比第一Cu膜206更快的沉积速度在第一Cu膜206上形成第二Cu膜207的步骤; 以及通过CMP研磨整个表面的步骤。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012169590A FORMATION METHOD OF Cu WIRING, DEPOSITION METHOD OF Cu FILM, AND DEPOSITION SYSTEM 有权
标题翻译： Cu线形成方法，Cu膜沉积方法和沉积系统
公开(公告)号：JP2012169590A
公开(公告)日：2012-09-06
申请号：JP2011251520
申请日：2011-11-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIZAKA TADAHIRO , GOMI ATSUSHI , KATO TAKAYOSHI , YOKOYAMA ATSUSHI , SAKUMA TAKASHI , YASUMURO CHIAKI , TOSHIMA HIROSHI , HATANO TATSUO , MIZUSAWA YASUSHI , HARA MASAMICHI , SUZUKI KENJI
IPC分类号： H01L23/532 , C23C14/14 , C23C16/16 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To ensure to bury Cu in a recessed part such as a fine trench or a hole without causing voids and form Cu wiring having low resistance.SOLUTION: A formation method of Cu wiring has: a process where a barrier film 204 is formed on a surface of a trench 203 in an interlayer insulation film 202 having the trench 203 formed on a wafer W; a process where an Ru film 205 is formed on the barrier film 204; and a process where a Cu film 206 is formed on the Ru film 205 through physical vapor deposition with the wafer heated so that Cu migrates and the trench 203 is buried.
摘要翻译：要解决的问题：为了确保将铜埋入诸如细沟槽或孔的凹陷部分而不引起空隙并形成具有低电阻的Cu布线。解决方案：Cu布线的形成方法是：在具有形成在晶片W上的沟槽203的层间绝缘膜202中，在沟槽203的表面上形成阻挡膜204的工艺; 在阻挡膜204上形成Ru膜205的工序; 以及通过物理气相沉积在Ru膜205上形成Cu膜206的方法，其中晶片被加热以使得Cu迁移并且沟槽203被掩埋。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012074522A Film forming method and film forming device 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：JP2012074522A
公开(公告)日：2012-04-12
申请号：JP2010217895
申请日：2010-09-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIZAKA TADAHIRO , SAKUMA TAKASHI , HATANO TATSUO , YOKOYAMA ATSUSHI , GOMI ATSUSHI , YASUMURO CHIAKI , FUKUSHIMA TOSHIHIKO , TOSHIMA HIROSHI , KAWAMATA SEIYA , MIZUSAWA YASUSHI , KATO TAKAYOSHI
IPC分类号： H01L21/3205 , C23C14/14 , H01L21/285 , H01L23/52
CPC分类号： H01L21/768 , C23C14/021 , C23C14/024 , C23C14/14 , C23C14/345 , C23C14/3492 , C23C14/541 , C23C14/542 , H01J37/34 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L21/76882
摘要： PROBLEM TO BE SOLVED: To provide a film forming method and a film forming device capable of forming a metal film in a recess to prevent a void or the like from occurring.SOLUTION: A film forming method for generating a metal ion from a metal target 76 by plasma in a processing container 22, pulling in the generated metal ion by a bias, and depositing a thin film of the metal on a workpiece on which a recess 4 is formed comprises: a base film formation step of generating a metal ion from a target, pulling in the metal ion by a bias, and forming a base film 90 in the recess; an etching step of ionizing a noble gas by a bias in the state in which no metal ion is generated, puling in the generated ion, and etching the base film; and film forming reflow step of generating a metal ion by plasma-sputtering the target, pulling in the generated metal ion by bias power, and reflowing this film 92 composed of a metal film by heating while accumulating this film.
摘要翻译：要解决的问题：提供能够在凹部中形成金属膜以防止发生空隙等的成膜方法和成膜装置。解决方案：一种用于在处理容器22中通过等离子体从金属靶76产生金属离子的薄膜形成方法，通过偏压拉动产生的金属离子，并将金属薄膜沉积在其上的工件上形成凹部4包括：基底膜形成步骤，从靶产生金属离子，通过偏压拉入金属离子，并在凹部中形成基膜90; 在不产生金属离子的状态下通过偏压离子化惰性气体的蚀刻步骤，在产生的离子中进行脉冲化，并蚀刻基膜; 以及成膜回流工序，通过等离子体溅射靶产生金属离子，通过偏置功率拉入所产生的金属离子，并在积聚该膜的同时通过加热回流由金属膜构成的膜92。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2014075398A Plasma processing method and plasma processing device 审中-公开
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：JP2014075398A
公开(公告)日：2014-04-24
申请号：JP2012220887
申请日：2012-10-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRASAWA TATSURO , YOKOYAMA ATSUSHI , YASUMURO CHIAKI , FUJISATO TOSHIAKI , YOSHIDA RYUTA , SAKUMA TAKASHI , KAN SENSHU
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/31
CPC分类号： H05F3/00 , C23C14/34 , C23C14/50 , C23C16/50 , H01J37/32568 , H01J37/34 , H01L21/6833
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method capable of sufficiently obtaining a chucking force for plasma processing and suppressing a particle generation amount by reducing residual charges.SOLUTION: A plasma processing method for performing plasma processing for a workpiece in a state in which the workpiece is absorbed onto an electrostatic chuck provided on an upper surface of a mounting table comprises the steps of: absorbing the workpiece onto the electrostatic chuck by applying a first voltage as an applied voltage and performing plasma processing for the workpiece in a state in which a heat-transfer gas is supplied between the electrostatic chuck and the workpiece (plasma processing step); stopping applied gas supply when the plasma processing step ends and reducing the applied voltage while exhausting heat-transfer gases remaining between the electrostatic chuck and the workpiece (applied voltage reducing step); and setting the applied voltage to the electrostatic chuck to zero and detaching the workpiece from the electrostatic chuck after the applied voltage reducing step (detaching step).
摘要翻译：要解决的问题：提供一种等离子体处理方法，其能够充分获得用于等离子体处理的夹持力并通过降低残余电荷来抑制颗粒发生量。解决方案：一种用于在工件中执行等离子体处理的等离子体处理方法，工件被吸收到设置在安装台的上表面上的静电卡盘上，包括以下步骤：通过施加第一电压作为施加电压将工件吸收到静电卡盘上，并在工件的等离子体处理中在静电卡盘和工件之间供给传热气体（等离子体处理工序）; 当等离子体处理步骤结束时停止施加的气体供应并且在排出残留在静电卡盘和工件之间的热传递气体的同时降低施加的电压（施加电压降低步骤）; 并且在施加的电压降低步骤（分离步骤）之后，将施加的静电卡盘的电压设置为零并将工件从静电卡盘分离。

5. 发明专利

JP2011066274A METHOD OF FORMING Cu WIRING 有权
标题翻译：形成铜线的方法
公开(公告)号：JP2011066274A
公开(公告)日：2011-03-31
申请号：JP2009216740
申请日：2009-09-18
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： GOMI ATSUSHI , MIZUSAWA YASUSHI , HATANO TATSUO , YOKOYAMA ATSUSHI , ISHIZAKA TADAHIRO , YASUMURO CHIAKI , KATO TAKAYOSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L23/53238 , H01L21/76829 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To form Cu wiring applicable when a high-temperature process ≥500°C is present after wiring formation. SOLUTION: This method of forming Cu wiring with a subsequent process accompanied by a process at a temperature ≥500°C executed therein includes processes of: forming an adhesion film formed of a metal having lattice spacing having a difference within 10% from that of Cu on at least a bottom face and a side face of a trench and/or a hole on a substrate having the trench and/or the hole on a surface thereof; forming a Cu film on the adhesion film to embed the trench and/or the hole; performing an annealing treatment ≥350°C to the substrate after the Cu film formation; leaving only a part or parts of the Cu film corresponding to the trench and/or the hole by polishing the Cu film; and forming a cap on the Cu film after the polishing to form the Cu wiring. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在布线形成之后，当存在高温过程≥500℃时，形成适用的Cu布线。＆lt; P＆gt;解决方案：其中执行的伴随着在≥500℃的温度下进行的后续处理的Cu布线的方法包括以下步骤：形成由格子间距为10％以下的金属形成的粘合膜 Cu的至少底面和沟槽的侧面和/或具有在其表面上的沟槽和/或孔的基板上的孔的Cu; 在粘合膜上形成Cu膜以嵌入沟槽和/或孔; 在Cu成膜后对基板进行≥350℃的退火处理; 通过抛光Cu膜仅留下对应于沟槽和/或孔的Cu膜的一部分或部分; 并且在抛光之后在Cu膜上形成盖以形成Cu布线。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010212601A METHOD OF FORMING CVD-Ru FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成CVD-Ru膜的方法和制造半导体器件的方法
公开(公告)号：JP2010212601A
公开(公告)日：2010-09-24
申请号：JP2009059605
申请日：2009-03-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KATO TAKAYOSHI , MIZUSAWA YASUSHI , HATANO TATSUO , GOMI ATSUSHI , YASUMURO CHIAKI , YOKOYAMA ATSUSHI
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/285 , H01L23/52
CPC分类号： H01L23/53238 , C23C16/16 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a CVD-Ru film with excellent wettability of Cu. SOLUTION: The CVD-Ru film is formed through a process of forming an Ru film on a substrate by CVD using a film forming material containing an organic metal compound and a process of annealing the substrate where the Ru film is formed in a hydrogen containing atmosphere. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有优异的Cu润湿性的CVD-Ru膜的方法。解决方案：通过使用含有有机金属化合物的成膜材料通过CVD在基板上形成Ru膜的工艺和在其中形成Ru膜的基板退火的工艺来形成CVD-Ru膜含氢气氛。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2015012132A Ｃｕ配線の形成方法有权
标题翻译：铜线形成方法
公开(公告)号：JP2015012132A
公开(公告)日：2015-01-19
申请号：JP2013136366
申请日：2013-06-28
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： YOKOYAMA ATSUSHI , KAN SENSHU , SAKUMA TAKASHI , YASUMURO CHIAKI , HIRASAWA TATSURO , ISHIZAKA TADAHIRO , SUZUKI KENJI
IPC分类号： H01L21/3205 , C23C14/14 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/2885 , H01L21/76834 , H01L21/76843 , H01L21/76867 , H01L21/76876 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要：【課題】凹部にCu配線を形成する際に、配線抵抗の上昇や工程の増加を抑え、かつ十分な埋め込み性を確保しつつ、エレクトロマイグレーション耐性の高いCu配線を得ることができるCu配線の形成方法を提供する。【解決手段】トレンチ203を有するウエハWの全面にバリア膜204を形成する工程と、バリア膜204の上にCVDによりRu膜205を形成する工程と、Ru膜205の上にCu合金膜206をPVDにより形成してトレンチ203にCu合金膜を埋め込む工程と、Cu合金膜206の上に、積み増し層207を形成する工程と、CMPにより全面を研磨してトレンチ203にCu配線を形成する工程と、Cu配線208の上に誘電体キャップ層209を形成する工程とを有する。【選択図】図2
摘要翻译：要解决的问题：提供一种Cu布线形成方法，其可以在抑制布线电阻的增加的同时实现具有高电迁移性的Cu布线，并且在凹陷中形成Cu布线时确保加工次数和确保充分的嵌入性。 Cu布线形成方法包括：在具有沟槽203的晶片W的整个区域上形成阻挡膜204的工艺; 通过CVD在阻挡膜204上形成Ru膜205的工序; 通过PVD在Ru膜205上形成Cu合金膜206以将Cu合金膜嵌入沟槽203中的工艺; 在Cu合金膜206上形成层叠层207的工序; 通过CMP研磨整个区域以在沟槽203中形成Cu布线的工艺; 以及在Cu布线208上形成电介质盖层209的工序。

8. 发明专利

JP2014049529A Plasma processing apparatus and method of cleaning oxide film of metal 审中-公开
标题翻译：等离子体处理装置和清洁金属氧化物膜的方法
公开(公告)号：JP2014049529A
公开(公告)日：2014-03-17
申请号：JP2012189656
申请日：2012-08-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YASUMURO CHIAKI , SAKUMA TAKASHI , YOKOYAMA ATSUSHI , TOSHIMA HIROSHI , HARA MASAMICHI , KAN SENSHU , TAKANASHI MORIHIRO , FUJISATO TOSHIAKI
IPC分类号： H01L21/304 , H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/532
CPC分类号： H01L21/02041 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32862 , H01L21/02065
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning an oxide film of metal in a plasma processing apparatus, and to provide a plasma processing apparatus.SOLUTION: A plasma processing apparatus 10 comprises: a processing container 12; a mounting table 14; a remote plasma unit 16; a diffusion part 18; and an ion filter 20. The mounting table 14 is provided in the processing container. The remote plasma unit 16 supplies gas containing excited hydrogen to the diffusion part 18 through an exit, and diffuses the active species of hydrogen. The ion filter 20 is interposed between the diffusion part 18 and the mounting table 14, while spaced apart from the diffusion part 18. The ion filter 20 captures hydrogen ions, contained in the active species of hydrogen diffused by the diffusion part 18, and passes the active species of hydrogen where the amount of hydrogen ions is reduced furthermore.
摘要翻译：要解决的问题：提供在等离子体处理装置中清洗金属的氧化膜的方法，并提供等离子体处理装置。解决方案：等离子体处理装置10包括：处理容器12; 安装台14; 远程等离子体单元16; 扩散部18; 和离子过滤器20.安装台14设置在处理容器中。远程等离子体单元16通过出口将含有激发的氢气的气体供给到扩散部分18，并扩散活性物质的氢。离子过滤器20介于扩散部分18和安装台14之间，同时与扩散部分18隔开。离子过滤器20捕获包含在扩散部分18扩散的氢的活性种类中的氢离子，并通过其中氢离子的量的活性种类进一步降低。

9. 发明专利

JP2011216867A Thin-film formation method 审中-公开
标题翻译：薄膜形成方法
公开(公告)号：JP2011216867A
公开(公告)日：2011-10-27
申请号：JP2011041774
申请日：2011-02-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIZAKA TADAHIRO , YOKOYAMA OSAMU , GOMI JUN , YASUMURO CHIAKI , KATO TAKAYOSHI , HATANO TATSUO , KAWASAKI HIROAKI , RULLAN JONATHAN
IPC分类号： H01L21/768 , C23C14/58 , C23C16/56 , H01L21/3205
CPC分类号： H01L21/76829 , C23C14/025 , C23C14/18 , C23C14/5806 , C23C14/5873 , C23C16/0272 , C23C16/08 , C23C16/56 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/42 , H01L21/76846 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a thin-film formation method capable of enhancing the electromigration resistance as well as improving adhesion with embedding metals and embedding characteristics.SOLUTION: A formation method, which forms a thin film on the top surface of an object W to be treated having concave portions 8 on the top surface, comprises an embedding step to form a metallic film 16 for embedding on the top surface of the object to be treated for embedding the concave portions, a diffusion prevention film formation step to form a metallic film 18 for preventing diffusion on the entire surface of the object to be treated so as to cover the other metallic film 16, and an annealing step to anneal the object to be treated. Such a method enhances the electromigration resistance and improves the adhesion with embedding metals and embedding characteristics.
摘要翻译：要解决的问题：提供一种能够提高耐迁移性以及提高与包埋金属的粘合性和嵌入特性的薄膜形成方法。解决方案：在物体W的顶面上形成薄膜的形成方法在上表面具有凹部8的处理方法包括嵌入工序，形成金属膜16，以嵌入被处理物体的上表面嵌入凹部，扩散防止膜形成工序形成金属膜18，用于防止待处理物体的整个表面上扩散以覆盖另一金属膜16;退火步骤，对待处理物体进行退火。这种方法提高了电迁移率，并提高了嵌入金属和嵌入特性的粘附性。

10. 发明专利

JP2011192661A Placing table structure, film forming apparatus, and raw material recovery method 有权
标题翻译：配置表结构，电影成型设备和原材料回收方法
公开(公告)号：JP2011192661A
公开(公告)日：2011-09-29
申请号：JP2010033995
申请日：2010-02-18
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： GOMI JUN , MIZUSAWA YASUSHI , HATANO TATSUO , HARA MASAMICHI , YAMAMOTO KAORU , TAGA SATOSHI , YASUMURO CHIAKI
IPC分类号： H01L21/683 , C23C16/44 , C23C16/458 , C23C16/46 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a placing table structure that efficiently and inexpensively recover a raw material itself and metal contained in the raw material by suppressing the number of times of a dry cleaning process or eliminating the dry cleaning process itself. SOLUTION: The placing table structure 22 is configured to place a subject W to be processed thereon, the subject W being used for forming a thin film on the surface of the subject W using a raw material gas composed of the raw material of an organic metal compound in a processing container which can be evacuated, and the placing table structure 22 includes: a placing table body 114 on which the subject to be processed is placed and inside which heaters 26 are prepared; and a base 116 which supports the placing table body in a state where the base surrounds the side surfaces and the bottom surface of the placing table body, and which has, inside of the base, a cooling medium path 28 wherein a cooling medium flows, and which is kept in a temperature range between a temperature below the decomposition temperature and a temperature equal to or higher than the solidification temperature or the liquefaction temperature of the raw material gas. Consequently, elimination of the dry cleaning process itself and so on are achieved to efficiently recover the raw material itself and the metal contained in the raw material. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种放置台结构，其通过抑制干洗过程的次数或消除干洗过程本身而有效且廉价地回收原料本身和包含在原料中的金属。
解决方案：放置台结构22构成为将被处理物W放置在被检体W的表面上，将被检体W用于在被检体W的表面上使用由原料构成的原料气体在可以抽真空的处理容器中的有机金属化合物，并且放置台结构22包括：放置台主体114，待处理对象被放置在其上并在其内准备加热器26; 以及基部116，其在基部围绕放置台主体的侧面和底面的状态下支撑放置台主体，并且在基部内部具有冷却介质流动的冷却介质路径28，并且保持在低于分解温度的温度和等于或高于原料气体的凝固温度或液化温度的温度之间的温度范围内。因此，实现干式清洗工艺本身的消除等，以有效地回收原料本身和原料中所含的金属。版权所有（C）2011，JPO＆INPIT

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