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1. 发明专利

JP2010059546A Apparatus and method for forming phase change layer and method of manufacturing phase change memory device utilizing the same 有权
标题翻译：用于形成相变层的装置和方法以及使用其改变相变记忆装置的方法
公开(公告)号：JP2010059546A
公开(公告)日：2010-03-18
申请号：JP2009201528
申请日：2009-09-01
申请人： Samsung Electronics Co Ltd , Tokyo Electron Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd. , 東京エレクトロン株式会社
发明人： FUJITA TAKEHIKO , IM DONG-HYUN , BAE BYOUNG JAE , KIN DOKYO , CHO SUNG-LAE , LEE JIN-IL , SEO JUHYUNG , PARK HYE-YOUNG
IPC分类号： C23C16/44 , H01L27/105 , H01L45/00
CPC分类号： H01L45/124 , C23C16/45531 , C23C16/45546 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1691
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a phase change layer and a method of manufacturing a phase change memory device utilizing the same. SOLUTION: Regarding an apparatus and a method for forming a phase change layer and a method of manufacturing a phase change memory device utilizing the same, a source material is supplied to a chamber, and purged from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material. Thus, an excellent phase change layer can be formed according to a compositional distribution by desired composition and thickness. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成相变层的装置和方法以及使用该相变层的相变存储装置的制造方法。解决方案：关于用于形成相变层的装置和方法以及使用其的相变存储器件的制造方法，将源材料供应到腔室并从腔室中清除。室的压力根据源材料的供应和源材料的吹扫而变化。因此，可以根据所需组成和厚度的组成分布形成优异的相变层。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009194391A Method for cleaning thin film forming apparatus, thin film forming method, and thin film forming apparatus 无效
标题翻译：清洗薄膜成型装置，薄膜成型方法和薄膜成型装置的方法
公开(公告)号：JP2009194391A
公开(公告)日：2009-08-27
申请号：JP2009091875
申请日：2009-04-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NORO NAOTAKA , TONEGAWA YAMATO , FUJITA TAKEHIKO , KIMURA NORIFUMI , HASEBE KAZUHIDE , NODERA NOBUTAKE
IPC分类号： H01L21/31 , C23C16/44 , H01L21/3065
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning a thin film forming apparatus, a thin film forming method and a thin film forming apparatus, that can suppress particle generation and improve productivity. SOLUTION: A control part 100 of a heat treatment apparatus 1 executes more than once a film forming process of forming a thin film by supplying a film forming gas containing hexachlorodisilane and ammonia to semiconductor wafers W. The control part 100 further executes a cleaning process of cleaning the interior of the heat treatment apparatus 1 by supplying a cleaning gas into a reaction tube 2 before executing the process in which the cumulative film thickness of silicon nitride films formed on semiconductor wafers W by the film forming process exceeds 1.5 μm. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以抑制颗粒产生并提高生产率的薄膜形成装置，薄膜形成方法和薄膜形成装置的清洁方法。解决方案：热处理设备1的控制部件100通过向半导体晶片W提供含有六氯二硅烷和氨的成膜气体来执行多次形成薄膜的成膜工艺。控制部件100进一步执行在进行通过成膜工艺形成在半导体晶片W上的氮化硅膜的累积膜厚超过1.5μm的处理之前，通过向反应管2中提供清洁气体来清洁热处理设备1的内部的清洁处理。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008109093A Film forming method, and film forming apparatus 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：JP2008109093A
公开(公告)日：2008-05-08
申请号：JP2007218026
申请日：2007-08-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , ISHIDA YOSHIHIRO , FUJITA TAKEHIKO , OGAWA ATSUSHI , NAKAJIMA SHIGERU
IPC分类号： H01L21/316 , C23C16/42 , C23C16/505 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a film forming method and a film forming apparatus capable of uniformly forming a good-quality SiO
2 film at a high speed even at a low temperature of ≤300°C, especially ≤100°C.
SOLUTION: In this method, the following steps are alternately executed: a step S1 of putting a workpiece into a processing chamber capable of being kept in vacuum state, and supplying an Si source into the processing chamber using an amino-silane gas of molecules each having two amino groups as the Si source, and oxygen radicals as an oxidizer; and a step S2 of supplying the oxygen radicals into the processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使在≤300°的低温下也能够高速地提供能够均匀地形成质量良好的SiO 2 膜的成膜方法和成膜装置 ℃，特别是≤100℃。解决方案：在该方法中，交替执行以下步骤：将工件放入能够保持在真空状态的处理室中的步骤S1，并且使用氨基硅烷气体将Si源供给到处理室的各自具有两个氨基作为Si源的分子，氧自由基作为氧化剂; 以及将氧自由基供给到处理室中的步骤S2。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008066483A Method and device for forming oxide film, and program 有权
标题翻译：用于形成氧化膜的方法和装置，以及程序
公开(公告)号：JP2008066483A
公开(公告)日：2008-03-21
申请号：JP2006242043
申请日：2006-09-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , ISHIDA YOSHIHIRO , FUJITA TAKEHIKO , OGAWA ATSUSHI , NAKAJIMA SHIGERU
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
摘要： PROBLEM TO BE SOLVED: To provide a method and device for forming an oxide film, which forms a high quality oxide film at low temperatures, and also to provide a program.
SOLUTION: Firstly, ammonia radical is supplied in a reactive tube 2 and the surface of a semiconductor wafer W is nitrided. Secondly, a DCS is supplied in the reactive tube 2, and an Si is absorbed to the nitrided surface of the semionductor wafer W. The absorbed Si is then oxidized by supplying an oxygen radical in the reactive tube 2 to form a silicon dioxide film on the semiconductor wafer W. The silicon dioxide film having the intended thickness is formed by repeatedly conducting these processes more than once.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成氧化膜的方法和装置，其在低温下形成高质量的氧化膜，并且还提供程序。解决方案：首先，在活性管2中供应氨基，并且半导体晶片W的表面被氮化。其次，在反应管2中提供DCS，并且Si吸收到半导体晶片W的氮化表面。然后通过在反应管2中供应氧自由基来吸收被吸收的Si，以形成二氧化硅膜半导体晶片W.具有预期厚度的二氧化硅膜通过多次重复进行这些处理而形成。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2005108928A Workpiece accommodating implement and heat treatment apparatus 审中-公开
标题翻译：工作实施和热处理设备
公开(公告)号：JP2005108928A
公开(公告)日：2005-04-21
申请号：JP2003336928
申请日：2003-09-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJITA TAKEHIKO , TAMURA AKITAKE
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205 , H01L21/22 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a workpiece accommodating implement and a heat treatment apparatus which can control sticking of particle to workpiece. SOLUTION: The wafer boat 11 of the heat treatment apparatus is provided with a plurality of struts 111 which construct a pair of end plates. The struts 111 are provided with a storage part 112, which stores a semiconductor wafer W, and a chipping maintenance portion 113 which can hold chipping of the semiconductor wafer W or the wafer boat 11. The storage 112 is formed so that it protrudes toward the interior of the wafer boat 11 from the side view of the struts 111. The chipping hold portion 113 is the lower part of the storage 112, and arranged so that generated chipping can be held. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够控制颗粒粘附到工件上的工件容纳工具和热处理设备。解决方案：热处理装置的晶片舟11具有构成一对端板的多个支柱111。支柱111设置有存储半导体晶片W的存储部分112和可以保持半导体晶片W或晶片舟皿11的碎裂的切屑维持部分113.储存器112形成为朝向晶片舟11的内部从支柱111的侧视图看。切屑保持部113是储存器112的下部，并且被布置成可以保持产生的切屑。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005079131A Heat treatment method and heat treatment equipment 有权
标题翻译：热处理方法和热处理设备
公开(公告)号：JP2005079131A
公开(公告)日：2005-03-24
申请号：JP2003304297
申请日：2003-08-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJITA TAKEHIKO , TAMURA AKITAKE , SUZUKI KEISUKE , HASEBE KAZUHIDE , OKADA MITSUHIRO
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method and heat treatment equipment in which adhesion of particles to an article being treated can be suppressed.
SOLUTION: The control section 100 of heat treatment equipment 1 carries a wafer boat 11 holding a plurality of semiconductor wafers W at a specified pitch interval into a reaction tube 2. When the wafer boat 11 holding the semiconductor wafers W is carried into the reaction tube 2, pressure in the reaction tube 2 is reduced temporarily to such a level as chipping of the semiconductor wafer W or the wafer boat 11 is not discharged to the outside of the reaction tube 2, and then the temperature in the reaction tube 2 is raised to a specified level while sustaining the pressure at such a level as the chipping can be discharged to the outside of the reaction tube 2.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以抑制颗粒附着到被处理物品的热处理方法和热处理设备。解决方案：热处理设备1的控制部分100将以特定间距保持多个半导体晶片W的晶片舟皿11装载到反应管2中。当将保持半导体晶片W的晶片舟皿11进入反应管2中的反应管2中的压力暂时降低至半导体晶片W的碎裂等级，或者晶片舟11不会排出到反应管2的外部，然后反应管内的温度 2升高到规定的水平，同时将压力保持在可以将碎屑排出到反应管2的外部的水平。（C）2005年，JPO＆NCIPI

7. 发明专利

JP2008109091A Method, apparatus and program of forming silicon oxide film 有权
标题翻译：方法，形成硅氧烷膜的方法和程序
公开(公告)号：JP2008109091A
公开(公告)日：2008-05-08
申请号：JP2007215809
申请日：2007-08-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , NAKAJIMA SHIGERU , OGAWA ATSUSHI , FUJITA TAKEHIKO
IPC分类号： H01L21/316 , C23C16/34 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method, an apparatus and a program of forming a silicon oxide film, which can form a good-quality silicon oxide film at a low temperature.
SOLUTION: An Si source is first supplied into a reaction tube 2 to allow Si to be adsorb on the surface of a semiconductor wafer W. Subsequently, oxygen radicals are supplied into the reaction tube 2 to oxidize the adsorbed Si and form a silicon oxide film on the semiconductor wafer W. This processing is repeated a plurality of times, thereby forming a silicon oxide film having a desired thickness.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以在低温下形成优质氧化硅膜的形成氧化硅膜的方法，装置和程序。解决方案：首先将Si源供应到反应管2中以允许Si吸附在半导体晶片W的表面上。随后，将氧自由基供应到反应管2中以氧化吸附的Si并形成半导体晶片W上的氧化硅膜。该处理重复多次，从而形成具有期望厚度的氧化硅膜。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005123532A Deposition system and deposition method 审中-公开
标题翻译：沉积系统和沉积方法
公开(公告)号：JP2005123532A
公开(公告)日：2005-05-12
申请号：JP2003359634
申请日：2003-10-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KUROKAWA MASATAKE , KOMORI KATSUHIKO , KIMURA NORIFUMI , HASEBE KAZUHIDE , FUJITA TAKEHIKO , TAMURA AKITAKE , FURUSAWA SUMIKAZU
IPC分类号： C23C16/42 , C23C16/22 , C23C16/455 , H01L21/205 , H01L21/265 , H01L21/285
CPC分类号： C23C16/22 , C23C16/45578
摘要： PROBLEM TO BE SOLVED: To provide a deposition system and a deposition method in which high in-plane uniformity is attained with regard to the film thickness or the concentration of germanium in a film when a silicon germanium film is deposited on the surface of a substrate.
SOLUTION: Three injectors 51-53 having different heights are provided in a treatment vessel of a vertical treatment system. Monosilane gas and monogerman gas are mixed previously and supplied into the treatment vessel 2 from each injector 51-53. In place of three injectors, distributed injectors each having a gas supply hole in the longitudinal direction may be provided in the treatment vessel.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种沉积系统和沉积方法，其中当硅锗膜沉积在表面上时，其中膜的厚度或锗的浓度达到高的面内均匀性的基底。解决方案：在垂直处理系统的处理容器中设置具有不同高度的三个喷射器51-53。将单硅烷气体和单甘醇气体先前混合并从每个注射器51-53供应到处理容器2中。代替三个喷射器，可以在处理容器中设置在长度方向上具有气体供给孔的分配喷射器。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2003037075A Control method of transfer device and method and device for heat treatment 有权
标题翻译：转移装置的控制方法和方法以及用于热处理的装置
公开(公告)号：JP2003037075A
公开(公告)日：2003-02-07
申请号：JP2001225781
申请日：2001-07-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SAKAMOTO KOICHI , TONEGAWA YAMATO , FUJITA TAKEHIKO
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/324 , H01L21/66 , H01L21/68
CPC分类号： H01L21/67259 , H01L21/67253 , H01L21/68 , H01L22/20 , Y10S414/135 , Y10S414/136
摘要： PROBLEM TO BE SOLVED: To provide a control method of a transfer device and a method and a device for heat treatment in which an article can be subjected to specified heat treatment with high in-plane uniformity and high work efficiency. SOLUTION: An operation for rationalizing the transfer position is performed by the control method of a transfer device comprising a step for actually heat- treating an article mounted at a set transfer position of an article holder and acquiring the distribution information of film formation on the surface of the article, a step for acquiring positional correction information on the set transfer position of the article holder, and a step for controlling the operational constitution of the transfer device such that the article is transferred to a target transfer position corrected by the positional correction information. In the heat-treatment method, specified heat treatment is performed under a state where the operation for rationalizing the transfer position is executed. The heat-treatment device comprises a controller for controlling the transfer device by the control method.
摘要翻译：要解决的问题：提供一种转印装置的控制方法以及用于热处理的方法和装置，其中制品可以以高的平面内均匀性和高工作效率进行特定的热处理。解决方案：用于使转印位置合理化的操作通过转印装置的控制方法进行，该转印装置包括用于实际热处理安装在物品保持器的设定转印位置处的物品的步骤，并获取表面上成膜的分布信息用于获取关于物品保持器的设定转印位置的位置校正信息的步骤，以及用于控制转印装置的操作构造的步骤，使得物品被转移到通过位置校正信息校正的目标转印位置。在热处理方法中，在执行用于使转印位置合理化的操作的状态下进行特定的热处理。热处理装置包括通过控制方法控制转印装置的控制器。

10. 发明专利

JP2010080657A Film forming device and using method of same 有权
标题翻译：电影成型装置及其使用方法
公开(公告)号：JP2010080657A
公开(公告)日：2010-04-08
申请号：JP2008246844
申请日：2008-09-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NORO NAOTAKA , FUJITA TAKEHIKO
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a film forming device which prevents a reactive by-product attached on a periphery of an exhaust port from burning.
SOLUTION: The film forming device 2 carries out film forming treatment for forming a thin film on an object W to be treated by using silicon containing gas, and oxidation treatment for oxidizing by using oxidation gas. The film forming device 2 includes a treatment container 4 for housing a plurality of objects to be treated, a material gas supplying means 26 for supplying material gas, a reactive gas supplying means 28 for supplying reactive gas reacting with the material gas, an oxidation gas supply means 32 for supplying the oxidation gas, a first exhaust port 54 arranged on the treatment container, a second exhaust port 88 arranged in a position different from the first exhaust port, a first exhaust system 56 connected to the first exhaust port and used in film forming treatment, a second exhaust system 90 connected to the second exhaust port and used in oxidation treatment, and an inert gas introducing means 66 for introducing inert gas to the first exhaust port at a time of oxidation treatment.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止附着在排气口周围的反应性副产物燃烧的成膜装置。解决方案：成膜装置2通过使用含硅气体进行待处理对象物W上的薄膜的成膜处理和氧化气体的氧化处理。成膜装置2包括用于容纳待处理的多个物体的处理容器4，用于供给材料气体的原料气体供给装置26，用于提供与原料气体反应的反应气体的反应气体供给装置28，氧化气体用于供给氧化气体的供给装置32，布置在处理容器上的第一排气口54，布置在与第一排气口不同的位置的第二排气口88，连接到第一排气口的第一排气系统56，成膜处理，连接到第二排气口并用于氧化处理的第二排气系统90，以及在氧化处理时将惰性气体引入第一排气口的惰性气体导入装置66。版权所有（C）2010，JPO＆INPIT

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