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1. 发明专利

JPS6358829A PATTERN FORMATION USING ELECTRON BEAM 失效
公开(公告)号：JPS6358829A
公开(公告)日：1988-03-14
申请号：JP20297786
申请日：1986-08-29
申请人： TOSHIBA CORP
发明人： SHIGEMITSU FUMIAKI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To reduce fog effect of an electron beam and to form a pattern of high dimensional accuracy by a method wherein a correction exposure is performed in such a manner that the amount of exposure in the electron beam patterning area becomes uniform by changing a beam current and a beam diameter by the automatic adjustment of an electrooptical system utilizing the frame-to-frame shifting time. CONSTITUTION:The first process in which the relation between the white-black ratio, which is the area ratio of the exposure part of the pattern to be formed and the non-exposure part and the amount of exposure, is computed, the second process in which the relation between the distance from the edge of pattern and the dimensional deviation is computed, the third proces in which the amount of exposure correction for the dimensional deviation of pattern is computed based on the rate of dimensional variation per unit of the amount of exposure, and the fourth proces, in which an electron beam is made to irradiate while the amount of exposure is being corrected based on the amount correction exposure for every patterning frame, are provided. When the correction of fog effect in the plane is going to be performed, the change of pattern size from the left end of the pattern area is measured in advance experimentally, the result is formed into numerical formula, and the dimensional variation can be suppressed to the minimum, if a correction dosage is given. When a patterning is actually performed, it is conducted by changing the beam current for every frame. The amount of the correction exposure is indicated by the slunt-lined part in the diagram.

2. 发明专利

JPS59132127A Method and apparatus for forming resist pattern 失效
标题翻译：用于形成电阻图案的方法和装置
公开(公告)号：JPS59132127A
公开(公告)日：1984-07-30
申请号：JP587683
申请日：1983-01-19
申请人： Toshiba Corp
发明人： KATOU YOSHIHIDE , USUDA KINYA , KIRITA KEI , SHINOZAKI TOSHIAKI , TSUCHIYA NOBUJI , SHIGEMITSU FUMIAKI
IPC分类号： H01L21/027 , G03F7/38 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To reduce the variance of size extending over the whole on a substrate to be treated, and to improve the accuracy of a pattern by cooling a resist film by lowering the temperature of the film while bringing the whole film to a uniform temperature. CONSTITUTION:A substrate 1 to which a pre-baking is completed is shifted to a belt conveyor 9, and carried and introduced to a cooling mechanism 10. The substrate 1 is transferred to a carrier mechanism 11 movable vertically and left and right, dipped in pure water 13 in a cooling tank 12, and cooled uniformly. The cooled substrate 1 is shifted on a belt conveyor 14 by the carrier mechanism 11, and placed on a rotary sample base 15 for spin drying. The substrate 1 dried by the revolution of the sample base 15 is transferred on a belt conveyor 17 by a vacuum chuck 16, and carried out.
摘要翻译：目的：为了减少待处理的基板上的整体尺寸的变化，并且通过在使整个膜均匀的温度下降低膜的温度来冷却抗蚀剂膜来提高图案的精度。构成：完成预烘烤的基板1移动到带式输送机9，并被运送并引入冷却机构10.基板1被转移到可垂直和左右移动的载体机构11中，浸渍在纯水13在冷却槽12中，并均匀冷却。冷却的基板1通过载体机构11在带式输送机14上移动，并且放置在旋转样品台15上用于旋转干燥。通过样品基座15的旋转而干燥的基板1通过真空吸盘16传送到带式输送机17上并进行。

3. 发明专利

JP2003195481A METHOD AND DEVICE FOR CORRECTING PHOTOMASK 审中-公开
公开(公告)号：JP2003195481A
公开(公告)日：2003-07-09
申请号：JP2001398182
申请日：2001-12-27
申请人： TOSHIBA CORP
发明人： KANEMITSU SHINGO , HIRANO TAKASHI , SHIGEMITSU FUMIAKI , MIYOSHI MOTOSUKE , SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , SEKINE MAKOTO , SAKAI TAKAYUKI , MORI ICHIRO , OKUMURA KATSUYA
IPC分类号： G03F1/72 , G03F1/74 , H01J37/305 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To remove a defect from a photomask by using an electron beam and to realize a finishing shape having no edge roughness at a high etching rate. SOLUTION: In a photomask correcting method for generating a photomask pattern image by scanning the surface of a photomask with electron beams and generating secondary electrons radiated from the surface of the photomask, specifying the position of a defective part and removing the defect by irradiating an area 75 to be etched which includes the defective part with an electron beam under gas atmosphere having a chemical etching effect to a film material forming the photomask pattern, the electron beam to be applied to the area 75 to be etched is applied to the area 75 as batch electron irradiation on the basis of a synthetic graphic prepared by combining a character aperture corresponding to the inverse pattern of the photomask and a rectangular aperture including the position of the defective part. COPYRIGHT: (C)2003,JPO

4. 发明专利

JPH05119465A MASK FOR LITHOGRAPHY AND ITS PRODUCTION 失效
公开(公告)号：JPH05119465A
公开(公告)日：1993-05-18
申请号：JP28476491
申请日：1991-10-30
申请人： TOSHIBA CORP
发明人： SHIGEMITSU FUMIAKI , OKUMURA KATSUYA
IPC分类号： G03F1/54 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a mask for lithography having excellent dimensional accuracy and resolution and to provide a method by which this mask can be produced extremely easily. CONSTITUTION:A SnO2 thin film 2 of 0.2mum thickness is formed on a transparent quartz glass plate 1. The SnO2 thin film 2 is selectively irradiated with an electron beam 3 under conditions of 20muC/cm and 0.5mum address unit (beam diameter). During radiation, the reduction reaction (SnO2 Sn+O2) proceeds to change the area irradiated with the electron beam 3 into reduced product (Sn) 4 having shielding property. Thus, the mask for lithography is obtd.

5. 发明专利

JPH02187014A CHARGED PARTICLE BEAM LITHOGRAPHY 失效
公开(公告)号：JPH02187014A
公开(公告)日：1990-07-23
申请号：JP743189
申请日：1989-01-13
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SHUDO YOSHIHIRO , SHIGEMITSU FUMIAKI
IPC分类号： H01L21/027
摘要： PURPOSE:To optimize a drawing speed and improve the throughput by deducing an optimum table movement speed for each frame for drawing processing. CONSTITUTION:The j-th row main deflection region in the i-th frame region is defined as Mij. Then, the i-th, j-th, and n-th row three main deflection regions are selectively taken out from the main pattern region for each frame region. Those main deflection regions are Mij-Mmj in case of the j-th row. Pattern exposure ratios in these regions, i.e., ratios of exposure portions to the entire drawing region are evaluated. After completion of all evaluations, the pattern exposure ratios of the three main deflection regions are compared for each frame region to determine the main deflection region which has a maximum ratio. A table movement speed in that frame region is evaluated on the basis of that main deflection region and hereby there is effected the drawing for each main deflection region in that frame region at that movement speed.

6. 发明专利

JPS6386518A FORMATION OF PATTERN 失效
公开(公告)号：JPS6386518A
公开(公告)日：1988-04-16
申请号：JP23232986
申请日：1986-09-30
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MASUDA SATOSHI , SHIGEMITSU FUMIAKI , SAITO SHINICHI
IPC分类号： G03F1/00 , G03F1/76 , G03F1/78 , G03F7/20 , H01L21/027
摘要： PURPOSE:To enable simply reducing the fog effect of an electron by making exposure uniform by irradiating ultraviolet rays on a resist film through a mask for correction after exposed in an electron beam. CONSTITUTION:The exposure of a main pattern 11 by the scanning of an electron ray is the greatest at the center and the smallest at the periphery. A correction pattern 15b is so formed that the thickness of a chromium thin film is denser at the center and that it is inversely proportional to the exposure of a resist film by the fog effect of the electron ray. A motor 34 controlled by a controller 24 is provided in a frame 33 and a chuck 30 is vertically moved by driving the motor 34. A plate 16 to be processed is installed on the chuck 30 and a mask 15 for correcting the exposure is attached on a mask holder 28 which is adjusted the vertical movement by an elevator 25 controlled by a vertical movement controller 21. A mercury lamp 26 connected to a power source 22 is provided above the mask 15 for correction and ultraviolet rays are irradiated.

7. 发明专利

JPS62121670A APPARATUS FOR APPLYING CHEMICAL SOLUTION 失效
公开(公告)号：JPS62121670A
公开(公告)日：1987-06-02
申请号：JP25942185
申请日：1985-11-19
申请人： TOSHIBA CORP
发明人： SHIGEMITSU FUMIAKI , USUDA KINYA
IPC分类号： B05C11/08 , G03F7/16 , H01L21/027
摘要： PURPOSE:To dispense with a valve or joint in a chemical solution supply pipe and to prevent film forming inferiority due to dust penetrating through the valve or joint, by constituting a suck-back apparatus of an apparatus connected to a chemical solution tank and reducing the internal pressure of said tank. CONSTITUTION:At first, only a solenoid valve 10 is opened to supply compressed gas 11 passing through a filter 9 into a tank 8 to send the chemical solution 7 in the tank 8 to a pipe 4 under pressure. Because there is no valve or joint on the way of the pipe 4, the chemical solution 7 is sent without being mixed with bubbles or dust on the way and dripped on the substrate 1 to be treated chucked to a rotary head 2 from the dispensing nozzle 3 provided to the leading end of the pipe 4. After a predetermined amount of the chemical solution 7 is dripped by the supply of a predetermined amount of the gas, a controller 14 closes the solenoid valve 10 and a solenoid valve 12 is opened for a moment to suck the gas in the tank 8 in a reduced pressure chamber 13 for a moment, and the chemical solution in the pipe 4 is returned to the tank 8.

8. 发明专利

JPH04345027A DRY ETCHING DEVICE 失效
公开(公告)号：JPH04345027A
公开(公告)日：1992-12-01
申请号：JP11763791
申请日：1991-05-22
申请人： TOSHIBA CORP
发明人： SHIGEMITSU FUMIAKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a dry etching device, wherein a masking material electrified to the positive side by positive ions which are reaction species is de- energized by irradiating the material with negative ions or an electron beam, the positive ions are made vertically incident and an anisotropic etching is realized. CONSTITUTION:A dry etching device comprises a reaction chamber 11 coupled with an exhaust part 16 and an upper electrode 12, which is provided at the upper part in this chamber 11 and communicates with a reaction gas introducing part 14 provided outside of the chamber 11. Moreover, the dry etching device is provided with a lower electrode 13, which is provided at the lower part in the chamber 11 in opposition to this upper electrode, is connected to a high- frequency power supply 15 provided outside of the chamber 11 and at the same time, on which a substrate 17 to be treated is placed at the time of operation, and a means, which is provided in the chamber 11 and radiates the substrate 17 with negative ions or an electron beam.

9. 发明专利

JPS6255933A METHOD AND DEVICE FOR DEVELOPING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS6255933A
公开(公告)日：1987-03-11
申请号：JP19616685
申请日：1985-09-05
申请人： TOSHIBA CORP
发明人： YAMAMOTO NOBORU , SHIGEMITSU FUMIAKI , MATSUOKA YASUO
IPC分类号： H01L21/30 , G03F7/00 , G03F7/30 , H01L21/027
摘要： PURPOSE:To perform development accurately by conducting the development by a method of immersion and by applying rinsing by a spray method in a single device. CONSTITUTION:A semiconductor substrate 3 is attracted to a board 1, and an electrode needle 10 is allowed to cut into the substrate 3. A developer 13 is filled from a nozzle 11 into a saucer 2 so that the substrate 3 is immersed in the developer. An electromotive force between the developer 13 and the substrate 3 is measured by means of an electrode plate 9 and the needle 10 to detect a development terminating point of a resist film. Based on a detection signal, the attracting board 1 is rotated at high speed so as to scatter the developer 13 out of the saucer 2. After the developer 13 is discharged, a rinsing liquid 14 is sprayed immediately from a nozzle 12 onto the substrate 3 to remove the developer while the high-speed rotation is continued. Since the discharge of the developer and the spraying of the rinsing liquid are conducted successively after the development terminating point is detected exactly by the measurement of the electromotive force, development is performed accurately.

10. 发明专利

JPS61102032A Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：JPS61102032A
公开(公告)日：1986-05-20
申请号：JP22470584
申请日：1984-10-25
申请人： Toshiba Corp
发明人： SHIGEMITSU FUMIAKI
IPC分类号： H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To improve the wetting properties of an etching liquid, and to obtain a pattern having high dimensional accuracy by using a resist mask through electron-ray exposure and development treatment and conducting etching in the presence of an alcohol group solvent. CONSTITUTION:An electron-ray sensitive resist is applied onto a Cr evaporating film on a glass plate and pre-baked, and exposed by electron rays and devel oped, thus forming a resist pattern. The Cr film exposed while using the resist as a mask is removed through etching by an etching liquid containing 15wt% C2H5OH. Since the wetting properties of the etching liquid to the resist pattern are improved by an alcohol group solvent, plasma ashing prior to etching as seen in conventional methods is unnecessitated, and the resist pattern does not expand on the basis of the unnecessity of plasma ashing, thus shortening a process while acquiring a pattern having high dimensional accuracy, then also preventing the generation of defects by foreign matter. The alcohol group solvent may be used by 10-20wt% to the etching liquid. The etching liquid and the alcohol solvent may also be atomized simultaneously.
摘要翻译：目的：为了提高蚀刻液的润湿性，通过电子射线曝光和显影处理使用抗蚀剂掩模，在醇系溶剂的存在下进行蚀刻，得到尺寸精度高的图案。构成：将电子感光抗蚀剂涂布在玻璃板上的Cr蒸发膜上并预烘烤，并通过电子射线曝光并形成抗蚀剂图案。在使用抗蚀剂作为掩模时曝光的Cr膜通过用包含15wt％C 2 H 5 OH的蚀刻液进行蚀刻而去除。由于通过醇基溶剂改善蚀刻液对抗蚀剂图案的润湿性能，因此不需要在蚀刻之前的等离子体灰化，如在等离子体灰化的不必要条件下，抗蚀剂图案不会膨胀，从而在获得具有高尺寸精度的图案的同时缩短处理，从而也防止异物产生缺陷。醇类溶剂可以使用10-20wt％的蚀刻液。蚀刻液和醇溶剂也可以同时雾化。

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