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1. 发明专利

JP2013133244A Method for producing single crystal silicon 有权
标题翻译：生产单晶硅的方法
公开(公告)号：JP2013133244A
公开(公告)日：2013-07-08
申请号：JP2011283331
申请日：2011-12-26
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： KATO HIDEO , KUBU SHINICHI , OKUBO MASAMICHI
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： C30B15/005 , C30B15/02 , C30B15/10 , C30B29/06 , C30B30/04 , C30B35/002
摘要： PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon, whereby the occurrence of dislocation in the single crystal silicon can be reduced when growing the single crystal silicon by a multi-pulling method whereby a plurality of single crystal silicons is pulled up from a raw material melt in the same crucible.SOLUTION: The method for producing single crystal silicon involves producing the single crystal silicon 1 by a multi-pulling method whereby a plurality of single crystal silicons 1 is pulled up from the raw material melt 7 in the same crucible 8 in a chamber by the Czochralski method. The method comprises a step of growing the single crystal silicon 1 in a magnetic field, wherein the amount of barium added to form a layer on an inner wall of the large-diameter crucible 8 is controlled so that it falls within a prescribed range.
摘要翻译：要解决的问题：提供一种单晶硅的制造方法，由此通过多拉法生长单晶硅时可以降低单晶硅中的位错的发生，由此多个单晶硅被拉起来自相同坩埚中的原料熔体。解决方案：制造单晶硅的方法涉及通过多拉法制备单晶硅1，由此多个单晶硅1从原料熔融物7中拉出通过Czochralski法在腔室中的同一坩埚8。该方法包括在磁场中生长单晶硅1的步骤，其中控制在大直径坩埚8的内壁上形成层的钡的量落在规定范围内。

2. 发明专利

JP2013133243A Method for producing single crystal silicon 有权
标题翻译：生产单晶硅的方法
公开(公告)号：JP2013133243A
公开(公告)日：2013-07-08
申请号：JP2011283330
申请日：2011-12-26
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： KATO HIDEO , KUBU SHINICHI
IPC分类号： C30B29/06 , C30B15/02 , C30B15/10
CPC分类号： C30B15/02 , C30B15/10 , C30B15/22 , C30B29/06 , C30B35/002
摘要： PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon, whereby the occurrence of dislocation in the single crystal silicon can be reduced when growing the single crystal silicon by a multi-pulling method whereby a plurality of single crystal silicons is pulled up from a raw material melt in the same crucible.SOLUTION: The method for producing single crystal silicon involves producing the single crystal silicon 1 by a multi-pulling method whereby a plurality of single crystal silicons 1 is pulled up from the raw material melt 7 in the same crucible 8 in a chamber by the Czochralski method. The method comprises a step of separating the single crystal silicon from the raw material melt by skipping formation of at least a portion of a tail part of the single crystal silicon 1, wherein the amount of barium added to form a layer on an inner wall of the crucible 8 is controlled so that it falls within a prescribed range.
摘要翻译：要解决的问题：提供一种单晶硅的制造方法，由此通过多拉法生长单晶硅时可以减少单晶硅中的位错的发生，由此多个单晶硅被拉起来自相同坩埚中的原料熔体。解决方案：制造单晶硅的方法涉及通过多拉法制备单晶硅1，由此多个单晶硅1从原料熔融物7中拉出通过Czochralski法在腔室中的同一坩埚8。该方法包括通过跳过单晶硅1的尾部的至少一部分的形成而将单晶硅与原料熔融物分离的步骤，其中添加的钡的量在内壁上形成层控制坩埚8使其落在规定范围内。

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